公开(公告)号：US07906570B2

公开(公告)日：2011-03-15

申请号：US11712403

申请日：2007-03-01

申请人： Ken-ichi Ueda ,  Shigeo Otome ,  Shoji Ito ,  Yow-hei Sohgawa ,  Hideo Asano

发明人： Ken-ichi Ueda ,  Shigeo Otome ,  Shoji Ito ,  Yow-hei Sohgawa ,  Hideo Asano

IPC分类号： C08K5/09

CPC分类号： C08K5/0091 ,  C08K5/0008 ,  C08K5/098 ,  C08K5/521 ,  C08L33/062

摘要： Disclosed is a thermoplastic resin composition contains including a methacrylic resin having a ring structure in a main chain thereof and a glass transition temperature of 110° C. or higher, and at least one kind of metal compound selected from metal salts, metal complexes, and metal oxides, wherein a content of the metal compound in the composition is from 10 to 10,000 ppm in terms of metal atom based on a mass of the methacrylic resin, and a process for producing such a thermoplastic resin composition, the process including carrying out, when preparing a methacrylic resin having a ring structure in a main chain thereof and a glass transition temperature of 110° C. or higher, cyclization condensation reaction using a catalyst to form the ring structure; and then adding a deactivator of the catalyst.

摘要翻译： 本发明公开了一种热塑性树脂组合物，其含有主链具有环结构，玻璃化转变温度为110℃以上的甲基丙烯酸系树脂，以及选自金属盐，金属络合物和 金属氧化物，其中，所述组合物中的金属化合物的含量以所述甲基丙烯酸系树脂的质量计为10〜10000ppm，以及所述热塑性树脂组合物的制造方法， 当制备其主链具有环结构并且玻璃化转变温度为110℃或更高的甲基丙烯酸树脂时，使用催化剂进行环化缩合反应以形成环结构; 然后加入催化剂的去活化剂。

公开(公告)号：US07489482B2

公开(公告)日：2009-02-10

申请号：US11009773

申请日：2004-12-10

申请人： Hiroyuki Ono ,  Hiroaki Suzuki ,  Toshio Sunaga ,  Hisatada Miyatake ,  Hideo Asano

发明人： Hiroyuki Ono ,  Hiroaki Suzuki ,  Toshio Sunaga ,  Hisatada Miyatake ,  Hideo Asano

IPC分类号： G11B5/39

CPC分类号： G11B5/39

摘要： In the case of magnetic head of magnetoresistance effect type whose breakdown voltage is as low as 0.3 V, it is impractical to ignore even a very small amount of static electricity that occurs during fabrication or use. In one embodiment, the desired magnetic head is produced by forming an SiO2 layer on a silicon slider, thereby forming an SOI substrate; forming on the SOI substrate circuits to protect a TMR element from overvoltage and a read-write circuit; forming field effect transistors from an Si semiconductor layer (formed by reduction of the SiO2 layer or epitaxial growth on the SiO2 layer); forming three electrodes (source, gate, drain) on the Si semiconductor layer; forming a Schottky diode by Schottky contact (metal) with the Si semiconductor layer; forming overvoltage protective circuits of aluminum wiring on the SOI substrate; and forming a TMR element.

摘要翻译： 在其击穿电压低至0.3V的磁阻效应型磁头的情况下，即使在制造或使用期间发生的非常少量静电也是不切实际的。 在一个实施例中，通过在硅滑块上形成SiO 2层来制造所需的磁头，由此形成SOI衬底; 在SOI衬底电路上形成以保护TMR元件免受过电压和读写电路; 从Si半导体层形成场效应晶体管（通过SiO 2层的还原或SiO 2层上的外延生长形成）; 在Si半导体层上形成三个电极（源极，栅极，漏极）; 通过与Si半导体层的肖特基接触（金属）形成肖特基二极管; 在SOI衬底上形成铝布线的过电压保护电路; 并形成TMR元件。

公开(公告)号：US07123498B2

公开(公告)日：2006-10-17

申请号：US10964352

申请日：2004-10-12

申请人： Hisatada Miyatake ,  Kohki Noda ,  Toshio Sunaga ,  Hiroshi Umezaki ,  Hideo Asano ,  Koji Kitamura

发明人： Hisatada Miyatake ,  Kohki Noda ,  Toshio Sunaga ,  Hiroshi Umezaki ,  Hideo Asano ,  Koji Kitamura

IPC分类号： G11C5/06

CPC分类号： G11C11/16

摘要： MRAM has read word lines WLR and write word line WLW extending in the y direction, write/read bit line BLW/R and write bit line BLW extending in the x direction, and the memory cells MC disposed at the points of the intersection of these lines. The memory MC includes sub-cells SC1 and SC2. The sub-cell SC1 includes magneto resistive elements MTJ1 and MTJ2 and a selection transistor Tr1, and the sub-cell SC2 includes magneto resistive elements MTJ3 and MTJ4 and a selection transistor Tr2. The magneto resistive elements MTJ1 and MTJ2 are connected in parallel, and the magneto resistive elements MTJ3 and MTJ4 are also connected in parallel. Further, the sub-cells SC1 and SC2 are connected in series between the write/read bit line BLW/R and the ground.

摘要翻译： MRAM具有在y方向上延伸的字线WLR和写入字线WLW，在x方向上延伸的写入/读取位线BLW / R和写入位线BLW，以及设置在这些交点处的存储单元MC 线条。 存储器MC包括子单元SC 1和SC 2。 子单元SC1包括磁电阻元件MTJ 1和MTJ 2以及选择晶体管Tr 1，子单元SC 2包括磁阻元件MTJ 3和MTJ 4以及选择晶体管Tr 2。 磁电阻元件MTJ 1和MTJ 2并联连接，磁电阻元件MTJ 3和MTJ 4也并联连接。 此外，子单元SC 1和SC 2串联连接在写/读位线BLW / R和地之间。

公开(公告)号：US06961198B2

公开(公告)日：2005-11-01

申请号：US10357568

申请日：2003-02-04

申请人： Hideo Asano ,  Rakesh Laroia ,  Takashi Yamazaki ,  Roh Mitsuhashi

发明人： Hideo Asano ,  Rakesh Laroia ,  Takashi Yamazaki ,  Roh Mitsuhashi

IPC分类号： G11B20/10 ,  G11B5/012 ,  G11B5/02

CPC分类号： G11B5/012

摘要： An apparatus for controlling data read/write between a hard disk and a hard disk controller is disclosed. The hard disk includes a disk for storing data, multiple read/write heads for reading or writing data onto the disk in accordance with a read request or write request from a requesting device, a non-volatile memory for storing control data in relation to reading data from the disk or writing data to the disk, and a controller for sending the control data to the requesting device in response to a read request or a write request from the requesting device before reading data or writing data.

摘要翻译： 公开了一种用于控制硬盘和硬盘控制器之间的数据读/写的装置。 硬盘包括用于存储数据的磁盘，用于根据来自请求设备的读取请求或写入请求将数据读取或写入磁盘的多个读取/写入头，用于存储与读取相关的控制数据的非易失性存储器 来自磁盘的数据或将数据写入磁盘，以及控制器，用于在读取数据或写入数据之前，响应于来自请求设备的读取请求或写入请求，将控制数据发送到请求设备。

公开(公告)号：US06639834B2

公开(公告)日：2003-10-28

申请号：US10134101

申请日：2002-04-26

申请人： Toshio Sunaga ,  Hisatada Miyatake ,  Koji Kitamura ,  Hideo Asano ,  Kohki Noda ,  Hiroshi Umezaki

发明人： Toshio Sunaga ,  Hisatada Miyatake ,  Koji Kitamura ,  Hideo Asano ,  Kohki Noda ,  Hiroshi Umezaki

IPC分类号： G11C1604

CPC分类号： G11C11/15 ,  G11C14/0081

摘要： The register disclosed herein includes a register block and a data writing block having non-volatile storage elements which store data output therefrom. The disclosed register further includes a data restoring block for reading data from the non-volatile storage elements. In a disclosed embodiment, the non-volatile storage elements are magnetic tunnel junction (MTJ) elements.

公开(公告)号：US06597530B2

公开(公告)日：2003-07-22

申请号：US09935272

申请日：2001-08-22

申请人： Hideo Asano ,  Kenji Okada ,  Tetsuo Ueda ,  Koichi Arai ,  Hideki Ohzeki

发明人： Hideo Asano ,  Kenji Okada ,  Tetsuo Ueda ,  Koichi Arai ,  Hideki Ohzeki

IPC分类号： G11B5596

CPC分类号： G11B5/5547

摘要： A disk drive seek control system device to reduce track pitch. When data is recorded, an offset value is added to the position of a read head element along the width of a track corresponding to an offset &Dgr;w between the read head element and a write head element. The value of the offset depends on the yaw angle &thgr; of the head. When data is read, the position of the read head element is chosen to be either the position of the write head element during write operations, or the midpoint between the position of the write head element and the read head element during write operations, or the center of a track.

公开(公告)号：US06490115B1

公开(公告)日：2002-12-03

申请号：US09218724

申请日：1998-12-22

申请人： Hiroaki Suzuki ,  Koji Kurachi ,  Katsumi Suda ,  Hideo Asano ,  Kenji Okada ,  Makoto Takase ,  Akira Kibashi ,  Hiromi Nishimiya ,  Takao Matsui ,  Tatsuya Endo ,  Kenji Kuroki

发明人： Hiroaki Suzuki ,  Koji Kurachi ,  Katsumi Suda ,  Hideo Asano ,  Kenji Okada ,  Makoto Takase ,  Akira Kibashi ,  Hiromi Nishimiya ,  Takao Matsui ,  Tatsuya Endo ,  Kenji Kuroki

IPC分类号： G11B2102

CPC分类号： G11B5/09 ,  G11B19/04

摘要： A method and apparatus for recovering from operation errors arising in an information recording and reproducing unit using a head with a GMR sensor is described. The read and write operations of the unit comprise executing a first error recovery procedure for recovering the operation error, executing a first GMR evaluation procedure for evaluating the performance of the GMR sensor when the operation error cannot be recovered by the first error recovery procedure, and applying a resetting pulse to the GMR sensor in accordance with the first GMR evaluation procedure.

摘要翻译： 描述了使用具有GMR传感器的头的信息记录和再现单元中出现的操作错误恢复的方法和装置。 该单元的读写操作包括执行用于恢复操作错误的第一错误恢复过程，当通过第一错误恢复过程无法恢复操作错误时，执行用于评估GMR传感器的性能的第一GMR评估过程，以及 根据第一GMR评估程序将复位脉冲施加到GMR传感器。

公开(公告)号：US06441982B1

公开(公告)日：2002-08-27

申请号：US09448234

申请日：1999-11-24

申请人： Yukio Fukushima ,  Tetsuo Ueda ,  Hideo Asano

发明人： Yukio Fukushima ,  Tetsuo Ueda ,  Hideo Asano

IPC分类号： G11B509

CPC分类号： G11B5/00 ,  G11B5/012 ,  G11B2005/0008 ,  G11B2005/0013 ,  G11B2005/0021

摘要： A drive unit which recovers from write instability by heating the magnetic head prior to performing a dummy write operation is described. In the preferred embodiments, once write instability has been detected the head may be heated by friction with the rotating disk or by an external heater. In the friction method the head is moved to a safe area of the disk such as a textured landing zone while the disk rotation is continued. In drives using unload ramps, a heater is preferably placed at the the ramp so that the head can be heated while parked on the ramp. In each of these embodiments dummy write operations are performed while the head is in a thermally excited state due to the heating. The combination of heating and the dummy write operation aids in restoring write stability.

摘要翻译： 描述通过在执行虚拟写入操作之前加热磁头而从写入不稳定性恢复的驱动单元。 在优选实施例中，一旦检测到写入不稳定性，头部可以通过与旋转盘的摩擦或外部加热器的摩擦来加热。 在摩擦方法中，当盘旋转持续时，头移动到盘的安全区域，例如纹理着陆区。 在使用卸载斜坡的驱动器中，优选地将加热器放置在斜坡处，使得头部可以在停放在斜坡上时被加热。 在这些实施例的每一个中，由于加热，头部处于热激发状态时执行伪写入操作。 加热和虚拟写入操作的组合有助于恢复写入稳定性。

公开(公告)号：US06304405B1

公开(公告)日：2001-10-16

申请号：US09115158

申请日：1998-07-14

申请人： Hideo Asano ,  Hiroaki Suzuki

发明人： Hideo Asano ,  Hiroaki Suzuki

IPC分类号： G11B1546

CPC分类号： G11B19/20 ,  G11B25/043

摘要： A method and apparatus for reducing the amount of time from a power-on status to a ready status of a hard disk drive device. In response to a power-on of a disk drive device, the rotation of a data recording disk is started. The rotational speed of the data recording disk is increased. When it is detected that the rotational speed of the data recording disk reaches an intermediate rotational speed, which is lower than a final rotational speed of the data recording disk, the rotational speed of the data recording disk is fixed at the intermediate rotational speed. One or more control programs recorded on the data recording disk are read and then stored in a memory. Then a ready signal is sent to a host processor. The disk drive device may then receive a read command from the host processor to read data from the data recording disk and to transfer the data to the host processor is detected. The rotational speed of the data recording disk is increased from the intermediate rotational speed to the final rotational speed. A normal read/write operation of the disk drive device begins when it is detected that the data recording disk reaches its final rotational speed.

摘要翻译： 一种用于减少从开机状态到硬盘驱动器设备的就绪状态的时间量的方法和装置。 响应于磁盘驱动设备的通电，数据记录盘的旋转开始。 数据记录盘的转速增加。 当检测到数据记录盘的转速达到低于数据记录盘的最终转速的中间转速时，数据记录盘的转速被固定在中间转速。 读取记录在数据记录盘上的一个或多个控制程序，然后将其存储在存储器中。 然后就绪信号被发送到主机处理器。 磁盘驱动器装置然后可以从主机处理器接收读取命令以从数据记录盘读取数据，并且检测到将数据传送到主机处理器。 数据记录盘的旋转速度从中间旋转速度增加到最终旋转速度。 当检测到数据记录盘达到其最终转速时，盘驱动装置的正常读/写操作开始。

公开(公告)号：US06275028B1

公开(公告)日：2001-08-14

申请号：US09220808

申请日：1998-12-23

申请人： Takao Matsui ,  Tatsuya Endo ,  Hiroaki Suzuki ,  Kenji Kuroki ,  Katsushi Yamaguchi ,  Hideo Asano

发明人： Takao Matsui ,  Tatsuya Endo ,  Hiroaki Suzuki ,  Kenji Kuroki ,  Katsushi Yamaguchi ,  Hideo Asano

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3166 ,  G11B5/3189 ,  G11B5/455 ,  G11B5/465 ,  G11B5/4806 ,  G11B2005/0008 ,  G11B2005/0016 ,  G11B2005/3996 ,  Y10T29/49034

摘要： In accordance with the present invention, the initialization for orienting the magnetized directions of the free layers of GMR heads (mounted on the diagonally shaded surface of sliders 14) by an external magnetic field is again executed also for the opposite direction, thereby to increase the yield of the GMR heads. Further, it is determined whether the magnetized direction of the pinned layer of GMR heads can be once reversed to the opposite direction, thereby to select damaged GMR heads at an early stage. Then, by performing a reset while performing a quasi-static test for seeing the read back response of the GMR head after restoring the magnetized direction of the pinned layer to a positive rotation, a safe and efficient reset is executed. The reset can be executed not only by applying only a pulse, but also while providing an external magnetic field in the pinning direction, or only by giving a high magnetic field. A tool 500 can be commonly used for the initialization, reset, or read back response through each process level. For the quasi-static test, coils 531, 532, and 533 are selectively used as Helmholz coils.

摘要翻译： 根据本发明，用于通过外部磁场定向GMR磁头自由层（安装在滑块14的斜面阴影表面上）的磁化方向的初始化也对于相反方向也被执行，从而增加 产量的GMR头。 此外，确定GMR磁头的被钉扎层的磁化方向是否可以反向一个相反的方向，从而在早期阶段选择损坏的GMR磁头。 然后，通过在将被钉扎层的磁化方向恢复到正旋转之后执行用于观察GMR头的回读响应的准静态测试执行复位，执行安全且有效的复位。 该复位不仅可以通过仅施加脉冲而且可以在钉扎方向上提供外部磁场，或者仅通过施加高磁场来执行。 工具500可以通常用于通过每个处理级别的初始化，复位或回读响应。 对于准静态测试，线圈531,532和533被选择性地用作Helmholz线圈。