-
公开(公告)号：US09064557B2
公开(公告)日：2015-06-23
申请号：US14085991
申请日：2013-11-21
Applicant: Infineon Technologies AG
Inventor： Wolfgang Scherr , Michael Sorger , Guenther Wellenzohn , Magdalena Forster , Philemon Schweizer , Katharina Schmut , Bernhard Goller , Mario Motz
CPC classification number: G11C5/141
Abstract: A self powered memory system is disclosed. The system includes a volatile supply component, a battery component, a switch component, and a volatile memory component. The volatile supply component is configured to provide a time varying supply. The battery component is configured to generate a non-volatile supply. The switch component is configured to generate a persistent supply from the time varying supply and the non-volatile supply. The volatile memory component is configured to maintain data by using the persistent supply.
Abstract translation: 公开了一种自供电的存储器系统。 该系统包括易失性电源组件，电池组件，开关组件和易失性存储器组件。 易失性供应部件配置成提供时变电源。 电池组件配置成产生非易失性电源。 开关组件被配置为从时变电源和非易失性电源产生持续电源。 易失性存储器组件被配置为通过使用持续电源来维护数据。
-
公开(公告)号：US09029966B2
公开(公告)日：2015-05-12
申请号：US14202080
申请日：2014-03-10
Applicant: Infineon Technologies AG
Inventor： Mario Motz , Udo Ausserlechner
CPC classification number: G01R31/2856 , G01R15/202 , G01R15/207 , G01R33/072 , H01L22/30 , H01L2224/48091 , H01L2224/73265 , H01L2924/0002 , H01L2924/00 , H01L2924/00014
Abstract: Embodiments relate to IC current sensors fabricated using thin-wafer manufacturing technologies. Such technologies can include processing in which dicing before grinding (DBG) is utilized, which can improve reliability and minimize stress effects. While embodiments utilize face-up mounting, face-down mounting is made possible in other embodiments by via through-contacts. IC current sensor embodiments can present many advantages while minimizing drawbacks often associated with conventional IC current sensors.
Abstract translation: 实施例涉及使用薄晶片制造技术制造的IC电流传感器。 这些技术可以包括使用研磨之前的切割（DBG）的处理，这可以提高可靠性并使应力效应最小化。 虽然实施例利用面朝上安装，但是在其他实施例中通过通孔通孔可以使面朝下安装成为可能。 IC电流传感器实施例可以呈现许多优点，同时最小化通常与常规IC电流传感器相关联的缺点。
-
公开(公告)号：US20150061661A1
公开(公告)日：2015-03-05
申请号：US14538042
申请日：2014-11-11
Applicant: Infineon Technologies AG
Inventor： Udo Ausserlechner , Mario Motz
IPC: G01R33/07
CPC classification number: G01R33/077 , G01R33/07 , G01R33/075 , H01L27/22 , H01L43/065
Abstract: One embodiment of the present invention relates to a vertical Hall-effect device. The device includes at least two supply terminals arranged to supply electrical energy to the first Hall-effect region; and at least one Hall signal terminal arranged to provide a first Hall signal from the first Hall-effect region. The first Hall signal is indicative of a magnetic field which is parallel to the surface of the semiconductor substrate and which acts on the first Hall-effect region. One or more of the at least two supply terminals or one or more of the at least one Hall signal terminal comprises a force contact and a sense contact.
Abstract translation: 本发明的一个实施例涉及一种垂直霍尔效应装置。 该装置包括至少两个电源端子，其布置成向第一霍尔效应区域提供电能; 以及至少一个霍尔信号端子，其布置成从第一霍尔效应区域提供第一霍尔信号。 第一霍尔信号表示与半导体衬底的表面平行的并且作用在第一霍尔效应区上的磁场。 所述至少两个电源端子中的一个或多个或所述至少一个霍尔信号端子中的一个或多个包括力接触件和感测触头。
-
公开(公告)号：US20150008893A1
公开(公告)日：2015-01-08
申请号：US14495160
申请日：2014-09-24
Applicant: Infineon Technologies AG
Inventor： Mario Motz
IPC: G05F1/575
CPC classification number: G05F1/575
Abstract: A system including a first transistor, a first capacitor and a circuit. The first transistor has a first control input and is configured to regulate an output voltage. The first capacitor is coupled at one end to the first control input and at another end to a circuit reference. The circuit is configured to provide a first voltage to the first control input, where the first voltage includes an offset voltage that is referenced to the output voltage and adjusted to compensate for variations in the first transistor.
Abstract translation: 一种包括第一晶体管，第一电容器和电路的系统。 第一晶体管具有第一控制输入并被配置为调节输出电压。 第一电容器在一端耦合到第一控制输入，另一端耦合到电路基准。 电路被配置为向第一控制输入提供第一电压，其中第一电压包括参考输出电压的偏移电压并被调整以补偿第一晶体管的变化。
-
公开(公告)号：US20140312934A1
公开(公告)日：2014-10-23
申请号：US14320718
申请日：2014-07-01
Applicant: Infineon Technologies AG
Inventor： Mario Motz
CPC classification number: H03K17/9517 , G01D5/142 , G01P3/489 , G01P13/00 , G01R17/02 , G01R19/0092 , G01R33/0029 , H03K5/2472 , H03K17/94
Abstract: One embodiment of the present invention relates to a method and apparatus to perform a low power activation of a system by measuring the slope of a digital signal corresponding to a motion sensor measurement value. In one embodiment, a low power activation circuit is coupled to magnetic motion sensor configured to output a magnetic signal proportional to a measured magnetic field. The low power activation circuit may comprise a digital tracking circuit configured to provide a digital signal that tracks the magnetic field and a difference detector configured to detect a difference between a current digital signal and a prior digital signal stored in a digital storage means. If the detected difference is larger than a digital reference level, an activation signal is output to awaken a system from a sleep mode.
Abstract translation: 本发明的一个实施例涉及通过测量对应于运动传感器测量值的数字信号的斜率来执行系统的低功率激活的方法和装置。 在一个实施例中，低功率激活电路耦合到磁性运动传感器，该磁性运动传感器被配置为输出与测量的磁场成比例的磁信号。 低功率激活电路可以包括被配置为提供跟踪磁场的数字信号的数字跟踪电路和被配置为检测当前数字信号和存储在数字存储装置中的先前数字信号之间的差异的差分检测器。 如果检测到的差异大于数字参考电平，则输出激活信号以从睡眠模式唤醒系统。
-
Patent Agency Ranking
公开(公告)号：US12276711B2
公开(公告)日：2025-04-15
申请号：US17718704
申请日：2022-04-12
Applicant: Infineon Technologies AG
Inventor： Michael Ortner , Benjamin Kollmitzer , Mario Motz
IPC: G01R33/00 , G01R33/04 , G01R33/07 , G06F3/0338
Abstract: An exemplary embodiment of a sensor system includes a magnet system which is designed to generate a magnetic field. Furthermore, the sensor system includes a first magnetic field sensor which is movable in a first direction relative to the magnet system and has a first distance from the magnet system in a second direction perpendicular to the first direction. The sensor system also includes a second magnetic field sensor which is movable in the first direction relative to the magnet system and has a second distance from the magnet system in the second direction, the second distance being greater than the first distance.
-
公开(公告)号：US12222384B2
公开(公告)日：2025-02-11
申请号：US17452284
申请日：2021-10-26
Applicant: Infineon Technologies AG
Inventor： Mario Motz , Florian Brugger , Carlos Humberto Garcia Rojas , Francesco Polo , Tobias Werth
Abstract: The present disclosure relates to circuits for detecting a line short circuit and/or a line interruption in a differentially operated line network, comprising at least one control circuit configured to control at least one common-mode signal of the differentially operated line network vis-à-vis a predefined common-mode signal variable and to indicate a line short circuit and/or a line interruption in the differentially operated line network if at least one control or controlled variable of the control circuit exceeds a predefined threshold value.
-
公开(公告)号：US12212293B2
公开(公告)日：2025-01-28
申请号：US18360253
申请日：2023-07-27
Applicant: Infineon Technologies AG
Inventor： Mario Motz
Abstract: The present disclosure relates to chopper amplifier circuits with inherent chopper ripple suppression. Example implementations can realize a doubly utilized chopper amplifier circuit that is a current-saving circuit with a wake-up function that is capable of providing a self-wake signal in order to change into a fast, low-jitter/low-latency mode, and to provide a wake-up signal for a sleeping microprocessor or a system in response to signal changes.
-
49.发明授权公开(公告)号：US12085462B2
公开(公告)日：2024-09-10
申请号：US17583462
申请日：2022-01-25
Applicant: Infineon Technologies AG
Inventor： Mario Motz
IPC: G01L1/22 , G01L1/18 , G01L9/06 , H01L27/088 , H01L29/84
CPC classification number: G01L1/22 , H01L27/088 , H01L29/84
Abstract: A stress sensor includes a semiconductor substrate with a first transistor arrangement and a second transistor arrangement. The first transistor arrangement includes a first transistor with a first source-drain channel region and a second transistor with a second source-drain channel region. The first transistor and the second transistor are aligned relative to each other such that the current flow directions in the first and the second source-drain channel regions are opposite to each other. The second transistor arrangement includes a third transistor with a third source-drain channel region and a fourth transistor with a fourth source-drain channel region. The third transistor and the fourth transistor are aligned relative to each other such that the current flow directions in the third and the fourth source-drain channel regions are opposite to each other. The stress sensor generates a gradient-compensated output signal used to determine a mechanical stress acting on the semiconductor substrate.
-
公开(公告)号：US20240085217A1
公开(公告)日：2024-03-14
申请号：US18519430
申请日：2023-11-27
Applicant: Infineon Technologies AG
Inventor： Mario Motz , Amirhossein Jouyaeian , Kofi Makinwa
Abstract: The described techniques address issues associated with hybrid current or magnetic field sensors used to detect both low- and high-frequency magnetic field components. The hybrid sensor implements a DC component rejection path in the high-frequency magnetic field component path. Both digital and analog implementations are provided, each functioning to generate a DC component cancellation signal to at least partially cancel a DC component of a current signal generated via the high-frequency magnetic field component path. The hybrid sensor provides a high-bandwidth, high-accuracy, and low DC offset hybrid current solution that also eliminates the need for DC decoupling capacitors in the high-frequency path. A modification is also described for implementing a Sigma-Delta (ΣΔ) quantization noise reduction path to reduce the quantization noise and to improve accuracy.
-
-
-
-
-
-
-
-
-
Search Results
122
records
(took 0.019 seconds)
