公开(公告)号：US09745188B1

公开(公告)日：2017-08-29

申请号：US15054310

申请日：2016-02-26

Applicant: Infineon Technologies AG

Inventor： Alfons Dehe ,  Stefan Barzen ,  Ulrich Krumbein ,  Wolfgang Friza ,  Wolfgang Klein

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0072 ,  B81B2203/0109 ,  B81C1/00325

Abstract: A microelectromechanical device may include: a semiconductor carrier; a microelectromechanical element disposed in a position distant to the semiconductor carrier; wherein the microelectromechanical element is configured to generate or modify an electrical signal in response to a mechanical signal and/or is configured to generate or modify a mechanical signal in response to an electrical signal; at least one contact pad, which is electrically connected to the microelectromechanical element for transferring the electrical signal between the contact pad and the microelectromechanical element; and a connection structure which extends from the semiconductor carrier to the microelectromechanical element and mechanically couples the microelectromechanical element with the semiconductor carrier.

公开(公告)号：US20170166437A1

公开(公告)日：2017-06-15

申请号：US15443922

申请日：2017-02-27

Applicant: Infineon Technologies AG

Inventor： Wolfgang Klein

IPC: B81B3/00 ,  H02N2/02 ,  B81C1/00

CPC classification number: B81B3/0021 ,  B81B3/0059 ,  B81B2203/0127 ,  B81B2203/0136 ,  B81B2203/0307 ,  B81C1/00158 ,  B81C2201/0197 ,  H01L29/84 ,  H02N1/008 ,  H02N2/02 ,  H04R1/04 ,  H04R1/06 ,  H04R19/005 ,  H04R19/04 ,  H04R31/003 ,  H04R2201/003 ,  H04R2207/021 ,  H04R2231/003 ,  H04R2410/03

Abstract: According to an embodiment, a MEMS device includes a deflectable membrane including a first plurality of electrostatic comb fingers, a first anchor structure including a second plurality of electrostatic comb fingers interdigitated with a first subset of the first plurality of electrostatic comb fingers, and a second anchor structure including a third plurality of electrostatic comb fingers interdigitated with a second subset of the first plurality of electrostatic comb fingers. The second plurality of electrostatic comb fingers are offset from the first plurality of electrostatic comb fingers in a first direction and the third plurality of electrostatic comb fingers are offset from the first plurality of electrostatic comb fingers in a second direction, where the first direction is different from the second direction.

公开(公告)号：US20160340173A1

公开(公告)日：2016-11-24

申请号：US14717556

申请日：2015-05-20

Applicant: Infineon Technologies AG

Inventor： Wolfgang Klein ,  Martin Wurzer ,  Stefan Barzen ,  Alfons Dehe

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/007 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/0307 ,  B81B2203/0315 ,  B81B2203/0353 ,  B81C1/00658 ,  H04R19/005 ,  H04R19/04 ,  H04R31/006 ,  H04R2201/003

Abstract: According to an embodiment, a microelectromechanical systems (MEMS) transducer includes a first electrode, a second electrode fixed to an anchor at a perimeter of the second electrode, and a mechanical support separate from the anchor at the perimeter of the second electrode and mechanically connected to the first electrode and the second electrode. The mechanical support is fixed to a portion of the second electrode such that, during operation, a maximum deflection of the second electrode occurs between the mechanical structure and the perimeter of the second electrode.

Abstract translation: 根据实施例，微机电系统（MEMS）换能器包括第一电极，固定到第二电极的周边处的锚固件的第二电极以及与第二电极的周边处的锚固件分离的机械支撑件，并机械连接 到第一电极和第二电极。 机械支撑件固定到第二电极的一部分，使得在操作期间，第二电极的最大偏转发生在机械结构和第二电极的周边之间。

公开(公告)号：US08946823B2

公开(公告)日：2015-02-03

申请号：US14020510

申请日：2013-09-06

Applicant: Infineon Technologies AG

Inventor： Wolfgang Klein ,  Hans Taddiken ,  Winfried Bakalski

IPC: H01L23/62 ,  H01L23/60 ,  H01L27/02 ,  H01L29/861

CPC classification number: H01L23/60 ,  H01L27/0259 ,  H01L29/861 ,  H01L29/8618 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An electrostatic discharge (ESD) protection element includes a collector area, a first barrier area, a semiconductor area, a second barrier area and an emitter area. The collector area has a first conductivity type. The first barrier area borders on the collector area and has a second conductivity type. The semiconductor area borders on the first barrier area and is an intrinsic semiconductor area, or has the first or second conductivity type and a dopant concentration which is lower than a dopant concentration of the first barrier area. The second barrier area borders on the semiconductor area and has the second conductivity type and a higher dopant concentration than the semiconductor area. The emitter area borders on the second barrier area and has the first conductivity type.

Abstract translation: 静电放电（ESD）保护元件包括集电区域，第一阻挡区域，半导体区域，第二阻挡区域和发射极区域。 集电区具有第一导电类型。 第一屏障区域与集电区域相邻，具有第二导电类型。 半导体区域与第一屏障区域相邻并且是本征半导体区域，或者具有低于第一阻挡区域的掺杂剂浓度的第一或第二导电类型和掺杂剂浓度。 第二阻挡区域与半导体区域相邻并且具有比半导体区域更高的第二导电类型和更高的掺杂剂浓度。 发射极区域与第二阻挡区域相邻并且具有第一导电类型。

公开(公告)号：US20140001491A1

公开(公告)日：2014-01-02

申请号：US14020510

申请日：2013-09-06

Applicant: Infineon Technologies AG

Inventor： Wolfgang Klein ,  Hans Taddiken ,  Winfried Bakalski

IPC: H01L23/60

CPC classification number: H01L23/60 ,  H01L27/0259 ,  H01L29/861 ,  H01L29/8618 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An electrostatic discharge (ESD) protection element includes a collector area, a first barrier area, a semiconductor area, a second barrier area and an emitter area. The collector area has a first conductivity type. The first barrier area borders on the collector area and has a second conductivity type. The semiconductor area borders on the first barrier area and is an intrinsic semiconductor area, or has the first or second conductivity type and a dopant concentration which is lower than a dopant concentration of the first barrier area. The second barrier area borders on the semiconductor area and has the second conductivity type and a higher dopant concentration than the semiconductor area. The emitter area borders on the second barrier area and has the first conductivity type.

Abstract translation: 静电放电（ESD）保护元件包括集电区域，第一阻挡区域，半导体区域，第二阻挡区域和发射极区域。 集电区具有第一导电类型。 第一屏障区域与集电区域相邻，具有第二导电类型。 半导体区域与第一屏障区域相邻并且是本征半导体区域，或者具有低于第一阻挡区域的掺杂剂浓度的第一或第二导电类型和掺杂剂浓度。 第二阻挡区域与半导体区域相邻并且具有比半导体区域更高的第二导电类型和更高的掺杂剂浓度。 发射极区域与第二阻挡区域相邻并且具有第一导电类型。