公开(公告)号：US11041757B2

公开(公告)日：2021-06-22

申请号：US16703428

申请日：2019-12-04

Applicant: Infineon Technologies Dresden GmbH & Co. KG

Inventor： Thoralf Kautzsch

IPC: G01J3/28 ,  G01J3/26 ,  G02B26/00

Abstract: A tunable Fabry-Perot (FP) filter element includes a first FP filter stack arranged at a movable first carrier element, and a second FP filter stack arranged in an opposing configuration to the first FP filter stack at a second carrier element, wherein, upon an actuation, the first carrier element with the first FP filter stack is vertically movable with respect to the second carrier element with the second FP filter stack, for adjusting the distance between the first and second opposing FP filter stack and wherein the movable first carrier element is formed as an SON structure (SON=silicon-on-nothing) in an SON substrate, wherein the SON structure is movable suspended by means of a mechanical spring element to the SON substrate.

公开(公告)号：US20200232848A1

公开(公告)日：2020-07-23

申请号：US16703428

申请日：2019-12-04

Applicant: Infineon Technologies Dresden GmbH & Co. KG

Inventor： Thoralf Kautzsch

IPC: G01J3/28 ,  G01J3/26

Abstract: A tunable Fabry-Perot (FP) filter element includes a first FP filter stack arranged at a movable first carrier element, and a second FP filter stack arranged in an opposing configuration to the first FP filter stack at a second carrier element, wherein, upon an actuation, the first carrier element with the first FP filter stack is vertically movable with respect to the second carrier element with the second FP filter stack, for adjusting the distance between the first and second opposing FP filter stack and wherein the movable first carrier element is formed as an SON structure (SON=silicon-on-nothing) in an SON substrate, wherein the SON structure is movable suspended by means of a mechanical spring element to the SON substrate.

公开(公告)号：US10604405B2

公开(公告)日：2020-03-31

申请号：US15481075

申请日：2017-04-06

Applicant: Infineon Technologies Dresden GmbH

Inventor： Thoralf Kautzsch

IPC: H01L21/20 ,  B81C1/00 ,  G01C19/5783 ,  H04R19/00 ,  B81B3/00 ,  G01S7/481 ,  G01P15/125 ,  G01P15/08 ,  H04R31/00 ,  G01C19/00 ,  G01P15/00 ,  H04R19/04

Abstract: A method for forming a microelectromechanical systems (MEMS) device may include performing a first silicon-on-nothing process to form a first cavity in a substrate. The method may include depositing an epitaxial layer on a surface of the substrate. The method may include performing a second silicon-on-nothing process to form a second cavity in the epitaxial layer. The method may include exposing the first cavity and the second cavity by removing a portion of the substrate and the epitaxial layer.

公开(公告)号：US10580663B2

公开(公告)日：2020-03-03

申请号：US15695088

申请日：2017-09-05

Applicant: Infineon Technologies Dresden GmbH

Inventor： Thoralf Kautzsch ,  Steffen Bieselt ,  Alessia Scire

IPC: B81B3/00 ,  B81C1/00 ,  H01L21/48

Abstract: A method for forming a microelectromechanical device is shown. The method comprises forming a cavity in a semiconductor substrate material, wherein the semiconductor substrate material comprises an opening for providing access to the cavity through a main surface area of the semiconductor substrate material. In a further step, the method comprises forming a support structure having a support structure material different from the semiconductor substrate material to close the opening at least partially by mechanically connecting the main surface area of the semiconductor substrate material with the bottom of the cavity. Furthermore, the method comprises a step of forming a lamella structure in the main surface area above the cavity such that the lamella structure is held spaced apart from the bottom of the cavity by the support structure.

公开(公告)号：US10544037B2

公开(公告)日：2020-01-28

申请号：US15875068

申请日：2018-01-19

Applicant: Infineon Technologies Dresden GmbH

Inventor： Thoralf Kautzsch ,  Heiko Froehlich ,  Alessia Scire ,  Maik Stegemann ,  Bernhard Winkler ,  Andre Roeth ,  Steffen Bieselt ,  Mirko Vogt

IPC: B81C1/00 ,  B81B3/00

Abstract: The present disclosure relates to an integrated semiconductor device, comprising a semiconductor substrate; a cavity formed into the semiconductor substrate; a sensor portion of the semiconductor substrate deflectably suspended in the cavity at one side of the cavity via a suspension portion of the semiconductor substrate interconnecting the semiconductor substrate and the sensor portion thereof, wherein an extension of the suspension portion along the side of the cavity is smaller than an extension of said side of the cavity.

公开(公告)号：US10170497B2

公开(公告)日：2019-01-01

申请号：US15899437

申请日：2018-02-20

Applicant: Infineon Technologies Dresden GmbH

Inventor： Thoralf Kautzsch ,  Alessia Scire ,  Steffen Bieselt ,  Franz Hirler ,  Anton Mauder ,  Wolfgang Scholz ,  Hans-Joachim Schulze ,  Francisco Javier Santos Rodriguez

IPC: H05K1/02 ,  H01L27/12 ,  H05K1/18 ,  H05K3/30 ,  H01L21/762 ,  H01L21/768 ,  H01L21/8234 ,  H01L21/761 ,  H01L21/764 ,  H01L29/739 ,  H01L29/78

Abstract: According to various embodiments, an electronic device may include a carrier including at least a first region and a second region being laterally adjacent to each other; an electrically insulating structure arranged in the first region of the carrier, wherein the second region of the carrier is free of the electrically insulating structure; a first electronic component arranged in the first region of the carrier over the electrically insulating structure; a second electronic component arranged in the second region of the carrier; wherein the electrically insulating structure includes one or more hollow chambers, wherein the sidewalls of the one or more hollow chambers are covered with an electrically insulating material.

公开(公告)号：US20180155188A1

公开(公告)日：2018-06-07

申请号：US15875068

申请日：2018-01-19

Applicant: Infineon Technologies Dresden GmbH

Inventor： Thoralf Kautzsch ,  Heiko Froehlich ,  Alessia Scire ,  Maik Stegemann ,  Bernhard Winkler ,  Andre Roeth ,  Steffen Bieselt ,  Mirko Vogt

IPC: B81C1/00 ,  B81B3/00

CPC classification number: B81C1/0015 ,  B81B3/0078 ,  B81B2201/0235 ,  B81B2203/0118 ,  B81B2203/0163

Abstract: The present disclosure relates to an integrated semiconductor device, comprising a semiconductor substrate; a cavity formed into the semiconductor substrate; a sensor portion of the semiconductor substrate deflectably suspended in the cavity at one side of the cavity via a suspension portion of the semiconductor substrate interconnecting the semiconductor substrate and the sensor portion thereof, wherein an extension of the suspension portion along the side of the cavity is smaller than an extension of said side of the cavity.

公开(公告)号：US09929181B2

公开(公告)日：2018-03-27

申请号：US15375277

申请日：2016-12-12

Applicant: Infineon Technologies Dresden GmbH

Inventor： Thoralf Kautzsch ,  Alessia Scire ,  Steffen Bieselt ,  Franz Hirler ,  Anton Mauder ,  Wolfgang Scholz ,  Hans-Joachim Schulze ,  Francisco Javier Santos Rodriguez

IPC: H01L21/76 ,  H01L27/12 ,  H01L21/768 ,  H01L21/8234 ,  H01L21/762 ,  H01L29/78 ,  H01L29/739

CPC classification number: H01L27/1207 ,  H01L21/761 ,  H01L21/76283 ,  H01L21/764 ,  H01L21/76895 ,  H01L21/823487 ,  H01L29/7397 ,  H01L29/7813 ,  H05K1/0256 ,  H05K1/0284 ,  H05K1/183 ,  H05K3/30 ,  H05K2201/10522 ,  Y10T29/4913

Abstract: According to various embodiments, an electronic device may include a carrier including at least a first region and a second region being laterally adjacent to each other; an electrically insulating structure arranged in the first region of the carrier, wherein the second region of the carrier is free of the electrically insulating structure; a first electronic component arranged in the first region of the carrier over the electrically insulating structure; a second electronic component arranged in the second region of the carrier; wherein the electrically insulating structure includes one or more hollow chambers, wherein the sidewalls of the one or more hollow chambers are covered with an electrically insulating material.

公开(公告)号：US20180065846A1

公开(公告)日：2018-03-08

申请号：US15695088

申请日：2017-09-05

Applicant: Infineon Technologies Dresden GmbH

Inventor： Thoralf Kautzsch ,  Steffen Bieselt ,  Alessia Scire

IPC: B81C1/00 ,  B81B3/00

Abstract: A method for forming a microelectromechanical device is shown. The method comprises forming a cavity in a semiconductor substrate material, wherein the semiconductor substrate material comprises an opening for providing access to the cavity through a main surface area of the semiconductor substrate material. In a further step, the method comprises forming a support structure having a support structure material different from the semiconductor substrate material to close the opening at least partially by mechanically connecting the main surface area of the semiconductor substrate material with the bottom of the cavity. Furthermore, the method comprises a step of forming a lamella structure in the main surface area above the cavity such that the lamella structure is held spaced apart from the bottom of the cavity by the support structure.

公开(公告)号：US20180017456A1

公开(公告)日：2018-01-18

申请号：US15647360

申请日：2017-07-12

Applicant: Infineon Technologies Dresden GmbH

Inventor： Thoralf Kautzsch ,  Heiko Froehlich ,  Marco Haubold ,  Andre Roeth ,  Maik Stegemann ,  Mirko Vogt

IPC: G01L9/00

CPC classification number: G01L9/0042 ,  G01L9/0045 ,  G01L9/0048 ,  G01L9/0054 ,  G01L9/0073 ,  G01L19/0618

Abstract: A manufacturing method includes providing a semiconductor substrate having a pressure sensor structure; and forming, during a BEOL process (BEOL=back-end-of-line), a metal-insulator-stack arrangement on the semiconductor substrate, wherein the metal-insulator-stack arrangement is formed to comprise (1) a cavity adjacent to the pressure sensor structure and extending over the pressure sensor structure, and (2) a pressure port through the metal-insulator-stack arrangement for providing a fluidic connection between the cavity and an environmental atmosphere, wherein the pressure port has a cross-sectional area, which is smaller than 10% of a footprint area of the pressure sensor structure within the cavity.