摘要:
A dope (36) containing TAC and plasticizer is produced. Foreign materials in the dope (36) are filtrated by a filtration device (57). In the filtration device (57), the dope (36) flows from an outer passage (58a) to an inner passage (58b) through a filter (59). The filter (59) has a first layer (59a), a second layer (59b), and a third layer (59c), which are formed of sintered metal fibers. An average diameter of the sintered metal fibers of the first layer (59a) is 8 mm, that of the second layer (59b) is 4 mm, and that of the third layer (59c) is 20 mm. The filter (59) is roasted 2 hours at 400° C. and reused. Breakages from the sintered metal fibers in the first and second layers (59a, 59b) are filtrated in the third layer (59c).
摘要:
There is provided a magnetic head where a heater is reliably incorporated into the magnetic head and the fly height of the magnetic head above a medium surface can be reliably controlled using thermal expansion due to heat from the heater. A method of manufacturing the magnetic head is also provided. The method of manufacturing includes, as steps of manufacturing the heater, a step of forming a silicon dioxide layer on the surface of a substrate, a step of forming, as heater forming layers, a tantalum layer, a heating layer, and another tantalum layer in that order on the surface of the silicon dioxide layer, a step of patterning a resist in accordance with a planar pattern of the heater to cover the surface of the heater forming layers, a step of forming the heater in a pattern by carrying out ion milling on the heater forming layers with the resist as a mask, a step of sputtering a silicon dioxide layer with a greater thickness than a thickness of the heater in a state where the surface of the heater has been covered with the resist, and a step of removing the resist together with the silicon dioxide layer that covers an outer surface of the resist from the surface of the heater by lifting off.
摘要:
According to a method of erasing data in a non-volatile semiconductor memory device, block-round type overerase verify is performed. Specifically, overerase verify and write back are performed sequentially from a first address to a last address. That is, even when a write back pulse is applied after a certain address is selected and verify is performed, address increment from one address to another is performed, regardless of whether verify has been performed or not. Therefore, it is not that the same address is cumulatively rewritten, but write back to a memory cell corresponding to a defective address is sequentially and gradually performed. Accordingly, as write to a memory cell in an overerased state can evenly be performed, influence by off-leakage is suppressed, and a memory cell having threshold voltage distribution with less variation can be implemented.
摘要:
A method of forming a conductive pattern can form a conductive pattern where the aspect ratio of the height to the width is high with favorable electrical connectivity. The method includes a process that forms a first resist layer, which exposes formation positions of a conductive pattern, on a formation surface on which the conductive pattern is to be formed, a process that forms a first stage conductive pattern by carrying out plating at the positions exposed from the first resist layer, a process that forms a first stage protective film which protects the first stage conductive pattern, a process that grinds flat a surface of the first stage protective film and end surfaces of the first stage conductive pattern, a process that forms a second resist layer, which exposes parts of the end surfaces of the first stage conductive pattern more narrowly than the first stage conductive pattern, on the surface of the first stage protective film and the end surfaces of the first stage conductive pattern, and a process that forms a second stage conductive pattern by carrying out plating at the positions on the end surfaces of the first stage conductive pattern that are exposed from the second resist layer.
摘要:
A flexible polyurethane foam excellent in the vibration characteristics and the load-deflection characteristics, a process for producing the flexible polyurethane foam stably and inexpensively, and a seat for an automobile excellent in posture-stability performance and supported feeling with little bottom-hitting feeling, are provided. When a polyoxyalkylene polyol and a polyisocyanate compound are reacted in the presence of a urethane-forming catalyst, a blowing agent and a foam stabilizer, a predetermined amount of a compound of the following formula (1) is used: wherein the average of n is from 13 to 2,100.
摘要:
A numerical control system comprises a high speed operation buffer 27 for storing all the NC control data (interpolation movement amount or acceleration or deceleration data, etc.) occurring in time series by executing apart program, a time series data parallel display part 62 for reading and displaying the data in time series, an optimization processing part 61 for making the edit process such as recalculation process to deletion of Null data, etc. and temporally shift the group of specific data or change the pattern in the group of said data, and a second high speed operation buffer 60 for storing the processing result. The series of processes are performed by a personal computer (PC) 51 connected to an NC apparatus 1 to be able to exchange data. The data stored in the second high speed operation buffer 60 is transferred to the side of the NC apparatus 1, and read and executed, whereby the optimal processing with temporal editing is performed at high speed.
摘要:
A polishing composition of the present invention contains cerium oxide abrasive grains with surfaces having an adsorption layer formed by adsorption of silicon oxide fine grains. The polishing composition is used in an application for polishing a polishing subject including a laminated body and a silicon oxide film arranged on the laminated body. The laminated body has a semiconductor substrate formed from a monocrystalline silicon or a polycrystalline silicon, a silicon nitride film arranged on the semiconductor substrate, and a surface with grooves. The polishing composition removes a portion of the silicon oxide film located outside the groove.
摘要:
In order to create a profile that associates lattice points defined in an equipment-dependent color space with lattice points defined in an equipment-independent color space, a reference profile that associates a plurality of lattice points in the equipment-dependent color space with lattice points in the equipment-independent color space is retrieved. A virtual force that acts on a focused lattice point in the equipment-independent color space is defined, and a position at which the focused lattice point is located in a steady-state in which the virtual force acts on the focused lattice point is calculated. The reference profile is referenced in order to retrieve a lattice point in the equipment-dependent color space associated with the position of the steady-state focused lattice point. A profile is created by associating the position of each steady-state focused lattice point with a lattice point in the equipment-dependent color space.
摘要:
The internal resistance related value which is related to the internal resistance of a secondary battery is compared with a previously obtained relation between the internal resistance related value and battery condition to judge the battery condition of the secondary battery. Since the internal resistance related value is a value related to the internal resistance which closely depends on the battery condition, the battery condition can be judged in detail based on the above relation. And the internal resistance related value can be obtained more speedily with a predetermined method. On the other hand, when the level of the degradation of a negative electrode is low, an electrolyte is supplemented, and when the level of the degradation of the negative electrode is high, a reducing agent is added to the electrolyte to regenerate the secondary battery. With this regenerating method, the performance of the negative electrode can be recovered without degrading a positive electrode.
摘要:
The invention realizes a wireless communication module that is capable of transmitting the fundamental wave with low loss and reducing the double higher harmonic wave level to a desired level or lower as the whole module. The invention provides a front end module to be used for a wireless communication system such as cellular phone in which at least an output power amplifier, a matching circuit, and a low-pass filter are mounted on one insulating substrate and these circuits are connected in the above-mentioned order, wherein the relative phase of the double higher harmonic wave impedance between phases in view of the matching circuit side and the low-pass filter side from the connection point between the matching circuit and the low-pass filter is set in a range of 180 degrees ±90 degrees.