公开(公告)号：US08039873B2

公开(公告)日：2011-10-18

申请号：US12276787

申请日：2008-11-24

申请人： Kazuhide Abe ,  Tadahiro Sasaki ,  Kazuhiko Itaya

发明人： Kazuhide Abe ,  Tadahiro Sasaki ,  Kazuhiko Itaya

IPC分类号： H01L27/105

CPC分类号： H01L27/088 ,  H01L23/4824 ,  H01L27/0207 ,  H01L27/105 ,  H01L29/1033 ,  H01L29/41758 ,  H01L29/7831 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： A semiconductor device includes a substrate including an element region having a polygonal shape defined by a plurality of edges, and an isolation region surrounding the element region, and a plurality of gate electrodes provided on the substrate, crossing the element region, arranged in parallel with each other, and electrically connected with each other, wherein at least one of the edges does not cross any of the gate electrodes, and is not parallel to the gate electrodes.

摘要翻译： 半导体器件包括：衬底，其包括具有由多个边缘限定的多边形形状的元件区域和围绕该元件区域的隔离区域;以及多个栅电极，设置在该衬底上，与该元件区域交叉，与该 彼此电连接，其中至少一个边缘不与任何栅电极交叉，并且不平行于栅电极。

公开(公告)号：US07937056B2

公开(公告)日：2011-05-03

申请号：US11755107

申请日：2007-05-30

申请人： Kazuhiko Itaya ,  Hiroshi Yoshida ,  Takashi Kawakubo

发明人： Kazuhiko Itaya ,  Hiroshi Yoshida ,  Takashi Kawakubo

IPC分类号： H04B1/18

CPC分类号： H01G5/18

摘要： A variable capacitance device has a piezoelectric driving part, a movable electrode, a fixed electrode, a dielectric film and a driving control unit. The piezoelectric driving part has a piezoelectric film, an upper electrode disposed on a top surface of the piezoelectric film, a lower electrode disposed on an undersurface of the piezoelectric film and electrode slits which separate the upper electrode and the lower electrode into two, respectively. The movable electrode is provided via the electrode slits at one end of the piezoelectric driving part. The fixed electrode is disposed opposite to the movable electrode via a gap. The dielectric film is disposed opposite to the movable electrode via the gap and provided on the fixed electrode. The driving control unit adjusts a distance between the movable electrode and the fixed electrode to reduce a fluctuation of a predetermined capacitance of a variable capacitor formed between the variable electrode and the fixed electrode.

摘要翻译： 可变电容器件具有压电驱动部，可动电极，固定电极，电介质膜和驱动控制部。 压电驱动部分具有压电膜，设置在压电膜的顶表面上的上电极，设置在压电膜的下表面上的下电极以及分别将上电极和下电极分成两部分的电极狭缝。 可动电极通过电极狭缝设置在压电驱动部分的一端。 固定电极通过间隙与可动电极相对设置。 电介质膜经由间隙与可动电极相对设置，设置在固定电极上。 驱动控制单元调整可动电极和固定电极之间的距离，以减小形成在可变电极和固定电极之间的可变电容器的预定电容的波动。

公开(公告)号：US07777592B2

公开(公告)日：2010-08-17

申请号：US11689848

申请日：2007-03-22

申请人： Michihiko Nishigaki ,  Ryoichi Ohara ,  Minoru Kawase ,  Kazuhiko Itaya

发明人： Michihiko Nishigaki ,  Ryoichi Ohara ,  Minoru Kawase ,  Kazuhiko Itaya

IPC分类号： H03H9/72

CPC分类号： H03H9/706 ,  H03H9/0571

摘要： An antenna sharing device has a common signal terminal pair, a first terminal pair, a second terminal pair, a first filter, a second filter, a first inductor element, second inductor elements, third inductor elements. The second and third inductor elements have a plurality of inductor elements, respectively. An inductor element closest to the first terminal pair among the inductor elements included in the second inductor elements and an inductor element closest to the second terminal pair among the third inductor elements are arranged further away from the first inductor element than the other inductor elements included in the second and third inductor elements, or formed on a substrate different from a substrate on which the first inductor element is formed, or formed opposite to the first inductor element by sandwiching a shielding pattern.

摘要翻译： 天线共享装置具有公共信号端子对，第一端子对，第二端子对，第一滤波器，第二滤波器，第一电感器元件，第二电感器元件，第三电感器元件。 第二和第三电感元件分别具有多个电感器元件。 包括在第二电感器元件中的电感器元件中最接近第一端子对的电感器元件和最靠近第三电感器元件中的第二端子对的电感器元件被布置成远离第一电感器元件，而不是包括在其中的其它电感器元件 第二和第三电感器元件，或形成在不同于其上形成有第一电感器元件的衬底的衬底上，或者通过夹持屏蔽图案与第一电感器元件相对形成。

公开(公告)号：US20090243725A1

公开(公告)日：2009-10-01

申请号：US12409926

申请日：2009-03-24

申请人： Kazuhide ABE ,  Tadahiro Sasaki ,  Kazuhiko Itaya

发明人： Kazuhide ABE ,  Tadahiro Sasaki ,  Kazuhiko Itaya

IPC分类号： H03F3/185 ,  H01L25/065

CPC分类号： H03F3/195 ,  H01L23/585 ,  H01L23/66 ,  H01L29/0657 ,  H01L29/41758 ,  H01L29/4238 ,  H01L2223/6644 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a first transistor unit including first field effect transistors with first gate electrodes electrically connected together, first sources electrically connected together, and first drains electrically connected together, the first gate electrodes being electrically connected to the first drains, a second transistor unit including second field effect transistors with second gate electrodes electrically connected together, second sources electrically connected together, and second drains electrically connected together, the second gate electrodes being electrically connected to the first gate electrodes, and dummy gate electrodes electrically isolated from the first gate electrodes and the second gate electrodes. The first gate electrodes, the second gate electrodes, and the dummy gate electrodes are arranged parallel to one another, and at least one dummy gate electrode is located between any one of the first gate electrodes and any one of the second gate electrodes.

摘要翻译： 半导体器件包括第一晶体管单元，其包括第一场效应晶体管，第一栅电极电连接在一起，电连接在一起的第一源和电连接在一起的第一漏极，第一栅电极电连接到第一漏极，第二晶体管单元 包括第二场效应晶体管，其中第二栅电极电连接在一起，第二源电连接在一起，第二漏极电连接在一起，第二栅电极电连接到第一栅电极，以及虚栅极与第一栅电极电隔离 和第二栅电极。 第一栅电极，第二栅电极和伪栅极彼此平行布置，并且至少一个虚拟栅电极位于第一栅极电极和第二栅极电极中的任一个之间。

公开(公告)号：US20090033177A1

公开(公告)日：2009-02-05

申请号：US10582229

申请日：2006-03-29

申请人： Kazuhiko Itaya ,  Ryoichi Ohara ,  Kenya Sano ,  Takaaki Yasumoto ,  Naoko Yanase

发明人： Kazuhiko Itaya ,  Ryoichi Ohara ,  Kenya Sano ,  Takaaki Yasumoto ,  Naoko Yanase

IPC分类号： H01L41/047 ,  H01L41/22

CPC分类号： H03H9/132 ,  H03H3/02 ,  H03H9/02118 ,  H03H9/13 ,  H03H9/174 ,  Y10T29/42

摘要： A thin film piezoelectric resonator includes a substrate having a cavity; a first electrode extending over the cavity; a piezoelectric film placed on the first electrode; and a second electrode placed on the piezoelectric film, the second electrode having a periphery partially overlapping on the cavity and tapered to have an inner angle of 30 degrees or smaller defined by a part of the periphery thereof and a bottom thereof.

摘要翻译： 薄膜压电谐振器包括具有空腔的基板; 在空腔上延伸的第一电极; 放置在第一电极上的压电薄膜; 以及放置在所述压电膜上的第二电极，所述第二电极具有在所述空腔上部分重叠的周边，并且具有锥形以具有由其周边的一部分及其底部限定的30度或更小的内角。

公开(公告)号：US20080238550A1

公开(公告)日：2008-10-02

申请号：US11857737

申请日：2007-09-19

申请人： Tadahiro SASAKI ,  Kazuhide Abe ,  Kazuhiko Itaya ,  Hideyuki Funaki

发明人： Tadahiro SASAKI ,  Kazuhide Abe ,  Kazuhiko Itaya ,  Hideyuki Funaki

IPC分类号： H03F3/16 ,  H03F3/68

CPC分类号： H03F3/604 ,  H01L21/823425 ,  H01L27/088 ,  H03F1/3205 ,  H03F3/16 ,  H03F3/607 ,  H03F3/72 ,  H03F2200/108 ,  H03F2200/451 ,  H03F2200/468 ,  H03F2200/543 ,  H03F2200/78 ,  H03F2203/7236

摘要： A power amplifier includes: a first multi-finger FET formed on a semiconductor substrate; a second multi-finger FET formed on the semiconductor substrate; a first temperature detector which detects a channel temperature of the first FET; a second temperature detector which detects a channel temperature of the second FET; a third temperature detector which detects a temperature of the semiconductor substrate; a first detection circuit detecting a difference between an output of the first temperature detector and an output of the third temperature detector and converting the difference to thermoelectromotive force; a second detection circuit detecting a difference between an output of the second temperature detector and the output of the third temperature detector and converting the difference to thermoelectromotive force; and a comparator comparing outputs of the first and second detection circuits with each other to turn on one of the first and second switches and turn off the other.

摘要翻译： 功率放大器包括：形成在半导体衬底上的第一多指FET; 形成在半导体衬底上的第二多指FET; 第一温度检测器，其检测第一FET的通道温度; 第二温度检测器，其检测第二FET的通道温度; 第三温度检测器，其检测半导体衬底的温度; 第一检测电路，检测第一温度检测器的输出和第三温度检测器的输出之间的差异，并将差值转换为热电动势; 第二检测电路，检测第二温度检测器的输出与第三温度检测器的输出之间的差异，并将差值转换为热电动势; 以及比较器，将第一和第二检测电路的输出彼此进行比较，以打开第一和第二开关中的一个并且关闭另一个。

公开(公告)号：US20070281646A1

公开(公告)日：2007-12-06

申请号：US11755107

申请日：2007-05-30

申请人： Kazuhiko Itaya ,  Hiroshi Yoshida ,  Takashi Kawakubo

发明人： Kazuhiko Itaya ,  Hiroshi Yoshida ,  Takashi Kawakubo

IPC分类号： H04B1/26

CPC分类号： H01G5/18

摘要： A variable capacitance device has a piezoelectric driving part, a movable electrode, a fixed electrode, a dielectric film and a driving control unit. The piezoelectric driving part has a piezoelectric film, an upper electrode disposed on a top surface of the piezoelectric film, a lower electrode disposed on an undersurface of the piezoelectric film and electrode slits which separate the upper electrode and the lower electrode into two, respectively. The movable electrode is provided via the electrode slits at one end of the piezoelectric driving part. The fixed electrode is disposed opposite to the movable electrode via a gap. The dielectric film is disposed opposite to the movable electrode via the gap and provided on the fixed electrode. The driving control unit adjusts a distance between the movable electrode and the fixed electrode to reduce a fluctuation of a predetermined capacitance of a variable capacitor formed between the variable electrode and the fixed electrode.

摘要翻译： 可变电容器件具有压电驱动部，可动电极，固定电极，电介质膜和驱动控制部。 压电驱动部分具有压电膜，设置在压电膜的顶表面上的上电极，设置在压电膜的下表面上的下电极以及分别将上电极和下电极分成两部分的电极狭缝。 可动电极通过电极狭缝设置在压电驱动部分的一端。 固定电极通过间隙与可动电极相对设置。 电介质膜经由间隙与可动电极相对设置，设置在固定电极上。 驱动控制单元调整可动电极和固定电极之间的距离，以减小形成在可变电极和固定电极之间的可变电容器的预定电容的波动。

公开(公告)号：US20070228887A1

公开(公告)日：2007-10-04

申请号：US11683755

申请日：2007-03-08

申请人： Michihiko Nishigaki ,  Toshihiko Nagano ,  Takashi Miyazaki ,  Kazuhiko Itaya ,  Takashi Kawakubo

发明人： Michihiko Nishigaki ,  Toshihiko Nagano ,  Takashi Miyazaki ,  Kazuhiko Itaya ,  Takashi Kawakubo

IPC分类号： H01L41/00

CPC分类号： B81B3/0072 ,  B81B2201/032 ,  H01G5/18 ,  H01H57/00 ,  H01H2057/006 ,  H01L41/094

摘要： A MEMS device includes: a first actuator having a first fixed end, including a stacked structure of a first lower electrode, a first piezoelectric film, and a first upper electrode, and being able to be operated by applying voltages to the first lower electrode and the first upper electrode; a second actuator having a second fixed end, being disposed in parallel with the first actuator, including a stacked structure of a second lower electrode, a second piezoelectric film, and a second upper electrode, and being able to be operated by applying voltages to the second lower electrode and the second upper electrode; and an electric circuit element having a first action part connected to the first actuator and a second action part connected to the second actuator.

摘要翻译： MEMS器件包括：第一致动器，具有第一固定端，包括第一下电极，第一压电膜和第一上电极的堆叠结构，并且能够通过向第一下电极施加电压而操作， 第一上电极; 具有第二固定端的第二致动器，与所述第一致动器平行设置，包括第二下电极，第二压电膜和第二上电极的堆叠结构，并且能够通过向所述第二致动器施加电压而被操作 第二下电极和第二上电极; 以及具有连接到第一致动器的第一作用部分和连接到第二致动器的第二作用部分的电路元件。

公开(公告)号：US07268647B2

公开(公告)日：2007-09-11

申请号：US11626270

申请日：2007-01-23

申请人： Kenya Sano ,  Naoko Yanase ,  Kazuhiko Itaya ,  Takaaki Yasumoto ,  Ryoichi Ohara ,  Takashi Kawakubo ,  Takako Motai

发明人： Kenya Sano ,  Naoko Yanase ,  Kazuhiko Itaya ,  Takaaki Yasumoto ,  Ryoichi Ohara ,  Takashi Kawakubo ,  Takako Motai

IPC分类号： H03H9/15 ,  H03H9/13 ,  H03H3/02 ,  H03H9/54

CPC分类号： H03H3/02 ,  H03H9/173 ,  H03H9/174 ,  H03H9/605 ,  Y10T29/42

摘要： A film bulk acoustic-wave resonator having, a substrate having a cavity, the substrate being formed of one of semi-insulating material and high-resistivity material, a bottom electrode partially fixed to the substrate, part of the bottom electrode is mechanically suspended above the cavity, a piezoelectric layer disposed on the bottom electrode, the shape of the piezoelectric layer is defined by a contour, a top electrode on the piezoelectric layer, a semiconductor intermediate electrode buried at and in a surface of the substrate, being located at the contour of the piezoelectric layer, the semiconductor region having a lower resistivity than the substrate, the intermediate electrode is connected to the bottom electrode in the inside of the contour, and a bottom electrode wiring connected to the semiconductor intermediate electrode extending from the contour to an outside of the contour in the plan view.

摘要翻译： 一种薄膜体声波谐振器，具有具有空腔的基板，所述基板由半绝缘材料和高电阻率材料中的一种形成，底部电极部分地固定到所述基板，所述底部电极的一部分机械地悬挂在 空腔，设置在底部电极上的压电层，压电层的形状由轮廓限定，压电层上的顶部电极，埋在基底表面的表面的半导体中间电极位于 压电层的轮廓，半导体区域具有比衬底低的电阻率，中间电极在轮廓内部连接到底部电极，并且连接到从轮廓延伸到半导体中间电极的底部电极配线 在平面视图外的轮廓外。

公开(公告)号：US20070115078A1

公开(公告)日：2007-05-24

申请号：US11626270

申请日：2007-01-23

申请人： Kenya Sano ,  Naoko Yanase ,  Kazuhiko Itaya ,  Takaaki Yasumoto ,  Ryoichi Ohara ,  Takashi Kawakubo ,  Takako Motai

发明人： Kenya Sano ,  Naoko Yanase ,  Kazuhiko Itaya ,  Takaaki Yasumoto ,  Ryoichi Ohara ,  Takashi Kawakubo ,  Takako Motai

IPC分类号： H03H9/54

CPC分类号： H03H3/02 ,  H03H9/173 ,  H03H9/174 ,  H03H9/605 ,  Y10T29/42

摘要： A film bulk acoustic-wave resonator having, a substrate having a cavity, the substrate being formed of one of semi-insulating material and high-resistivity material, a bottom electrode partially fixed to the substrate, part of the bottom electrode is mechanically suspended above the cavity, a piezoelectric layer disposed on the bottom electrode, the shape of the piezoelectric layer is defined by a contour, a top electrode on the piezoelectric layer, a semiconductor intermediate electrode buried at and in a surface of the substrate, being located at the contour of the piezoelectric layer, the semiconductor region having a lower resistivity than the substrate, the intermediate electrode is connected to the bottom electrode in the inside of the contour, and a bottom electrode wiring connected to the semiconductor intermediate electrode extending from the contour to an outside of the contour in the plan view.

摘要翻译： 一种薄膜体声波谐振器，具有具有空腔的基板，所述基板由半绝缘材料和高电阻率材料中的一种形成，底部电极部分地固定到所述基板，所述底部电极的一部分机械地悬挂在 空腔，设置在底部电极上的压电层，压电层的形状由轮廓限定，压电层上的顶部电极，埋在基底表面的表面的半导体中间电极位于 压电层的轮廓，半导体区域具有比衬底低的电阻率，中间电极在轮廓内部连接到底部电极，并且连接到从轮廓延伸到半导体中间电极的底部电极配线 在平面视图外的轮廓外。