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    Method of inspecting particles on wafers
    42.
    发明授权
    Method of inspecting particles on wafers 失效
    在晶片上检查颗粒的方法

    公开(公告)号：US5640238A

    公开(公告)日：1997-06-17

    申请号：US694318

    申请日：1996-08-08

    申请人： Masami Nakano ,  Isao Uchiyama ,  Hiroyuki Takamatsu ,  Morie Suzuki

    发明人： Masami Nakano ,  Isao Uchiyama ,  Hiroyuki Takamatsu ,  Morie Suzuki

    IPC分类号： G01N21/94 ,  G01N21/956 ,  H01L21/304 ,  H01L21/66 ,  G01N21/00

    CPC分类号： H01L22/12

    摘要： A method of inspecting particles on wafers is disclosed, wherein a first particle map is made by particle measurement on a wafer to be inspected, then a particle removing treatment is conducted to remove particles from the wafer, subsequently after a second particle map is made by particle measurement on the wafer which is subjected to the particle removing treatment, the first particle map is compared with the second particle map, and particles appearing at the immobile point common in both the first particle map and the second particle map are determined as crystal defects or surface irregularities such as scratches and particles appearing in the first particle map but those disappearing in the second particle map are determined as real dust particles or contaminants, thereby accurately detecting particles on wafers.

    摘要翻译： 公开了一种在晶片上检查颗粒的方法，其中通过在要检查的晶片上进行颗粒测量来制备第一颗粒图，然后进行颗粒去除处理以从晶片去除颗粒，随后在第二颗粒图由 将进行了粒子去除处理的晶片上的粒子测定与第二粒子图进行比较，将第一粒子图和第二粒子图中共同的不动点的粒子确定为晶体缺陷 或表面凹凸，例如出现在第一粒子图中的划痕和颗粒，而在第二颗粒图中消失的那些被确定为真实的灰尘颗粒或污染物，从而精确地检测晶片上的颗粒。