公开(公告)号：US08525552B2

公开(公告)日：2013-09-03

申请号：US13562144

申请日：2012-07-30

申请人： Takashi Ando ,  Keiichi Kusumoto ,  Kenji Shimazaki ,  Kazuyuki Nakanishi ,  Tetsurou Toubou

发明人： Takashi Ando ,  Keiichi Kusumoto ,  Kenji Shimazaki ,  Kazuyuki Nakanishi ,  Tetsurou Toubou

IPC分类号： H01L25/00 ,  H01L21/82 ,  H03K19/00 ,  H03K19/094

CPC分类号： H01L27/0207 ,  H01L27/11807 ,  H01L2027/11822

摘要： A semiconductor integrated circuit device includes cells A-1, B-1, and C-1 that have the same logic. Cell B-1 has cell width W2 larger than a cell width of cell A-1, but gate length L1 of a MOS transistor is equal to that of cell A-1. Cell C-1 has cell width W2 equal to a cell width of cell B-1, but has a MOS transistor having large gate length L2. A circuit delay of cell C-1 becomes large as compared with that of cells A-1 and B-1, but leak current becomes small. Therefore, by replacing cell A-1 adjacent to a space area with cell B-1, and by replacing cell B-1 in a path having room in timing with cell C-1, for example, leak current can be suppressed without increasing a chip area.

摘要翻译： 半导体集成电路器件包括具有相同逻辑的单元A-1，B-1和C-1。 单元B-1具有大于单元A-1的单元宽度的单元宽度W2，但是MOS晶体管的栅极长度L1等于单元A-1的单元宽度。 单元C-1具有等于单元B-1的单元宽度的单元宽度W2，但是具有栅极长度L2大的MOS晶体管。 与电池A-1和B-1相比，电池C-1的电路延迟变大，但泄漏电流变小。 因此，通过用小区B-1替换与空间区域相邻的小区A-1，并且例如通过用小区C-1定时的具有空间的路径替换小区B-1，可以抑制泄漏电流而不增加 芯片面积。

公开(公告)号：US08368225B2

公开(公告)日：2013-02-05

申请号：US13113644

申请日：2011-05-23

申请人： Tomoaki Ikegami ,  Hidetoshi Nishimura ,  Kazuyuki Nakanishi

发明人： Tomoaki Ikegami ,  Hidetoshi Nishimura ,  Kazuyuki Nakanishi

IPC分类号： H01L23/52 ,  H01L27/04

CPC分类号： H01L27/04 ,  H01L27/0207 ,  H01L27/11807

摘要： A layout structure of a semiconductor integrated circuit is provided with which narrowing and breaking of metal interconnects near a cell boundary can be prevented without increasing the data amount and processing time for OPC. A cell A and a cell B are adjacent to each other along a cell boundary. The interconnect regions of metal interconnects from which to the cell boundary no other interconnect region exists are placed to be substantially axisymmetric with respect to the cell boundary, while sides of diffusion regions facing the cell boundary are asymmetric with respect to the cell boundary.

摘要翻译： 提供半导体集成电路的布局结构，可以防止在单元边界附近的金属互连的变窄和断开，而不增加OPC的数据量和处理时间。 单元格A和单元格B沿着单元边界彼此相邻。 相对于单元边界，金属互连的连接区域与单元边界不存在其他互连区域被放置为基本上是轴对称的，而面向单元边界的扩散区域的边相对于单元边界是不对称的。

公开(公告)号：US20120231374A1

公开(公告)日：2012-09-13

申请号：US13511175

申请日：2010-12-24

申请人： Takashi Iseki ,  Kazuyuki Nakanishi ,  Yasuhiro Ozawa ,  Yuka Yamada ,  Hajime Hasegawa ,  Masafumi Koizumi ,  Katsutoshi Fujisawa ,  Naoki Ueda ,  Hirohiko Hisano

发明人： Takashi Iseki ,  Kazuyuki Nakanishi ,  Yasuhiro Ozawa ,  Yuka Yamada ,  Hajime Hasegawa ,  Masafumi Koizumi ,  Katsutoshi Fujisawa ,  Naoki Ueda ,  Hirohiko Hisano

IPC分类号： H01M8/02 ,  C23C16/503

CPC分类号： C01B31/02 ,  B82Y30/00 ,  C01B32/05 ,  H01M8/021 ,  H01M8/0228 ,  H01M8/0234 ,  Y02P70/56

摘要： A bipolar plate for a fuel cell comprises a substrate formed of stainless steel; an oriented amorphous carbon film formed at least on a surface of the substrate facing an electrode, and containing C as a main component, 3 to 20 at. % of N, and more than 0 at. % and not more than 20 at. % of H, and when the total amount of the C is taken as 100 at. %, the amount of C having an sp2 hybrid orbital (Csp2) being not less than 70 at. % and less than 100 at. %, and (002) planes of graphite being oriented along a thickness direction; a mixed layer generated in an interface between the substrate and the oriented amorphous carbon film and containing at least one kind of constituent atoms of each of the substrate and the oriented amorphous carbon film; and a plurality of projections protruding from the mixed layer into the oriented amorphous carbon film and having a mean length of 10 to 150 nm.

摘要翻译： 用于燃料电池的双极板包括由不锈钢形成的基板; 至少在面向电极的基板的表面上形成并含有C为主要成分的定向非晶碳膜，3至20at。 N的百分比，超过0。 ％，不超过20。 H的百分比，当C的总量取为100时。 ％，具有sp2混合轨道（Csp2）的C的量不小于70at。 ％和小于100。 ％和（002）面的石墨沿厚度方向取向; 在所述基板和所述取向非晶碳膜之间的界面中产生并且含有所述基板和所述取向非晶碳膜中的至少一种构成原子的混合层; 以及从混合层突出到取向非晶碳膜中并具有10〜150nm的平均长度的多个突起。

公开(公告)号：US20120183887A1

公开(公告)日：2012-07-19

申请号：US13497475

申请日：2010-12-24

申请人： Takashi Iseki ,  Yuka Yamada ,  Kazuyuki Nakanishi ,  Yasuhiro Ozawa ,  Shingo Ohta

发明人： Takashi Iseki ,  Yuka Yamada ,  Kazuyuki Nakanishi ,  Yasuhiro Ozawa ,  Shingo Ohta

IPC分类号： H01M8/02 ,  H01B1/04 ,  H01M4/66 ,  C23C16/26

CPC分类号： C01B31/02 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/05 ,  C01B32/182 ,  C23C16/26 ,  C23C16/503 ,  H01M4/625 ,  H01M4/663 ,  H01M4/96 ,  H01M8/0202

摘要： The oriented amorphous carbon film contains C as a main component, 3 to 20 at. % of N, and more than 0 at. % and not more than 20 at. % of H, and when the total amount of the C is taken as 100 at. %, the amount of C having an sp2 hybrid orbital (Csp2) being not less than 70 at. % and less than 100 at. %, and (002) planes of graphite being oriented along a thickness direction. This film has a novel structure and exhibits a high electric conductivity. This film can be formed by DC plasma CVD method in which an electric discharge is generated by applying a voltage of not less than 1500 V to reaction gas including at least one kind of compound gas selected from gas of a carbocyclic compound containing Csp2 and gas of an N-containing heterocyclic compound containing Csp2, and nitrogen and/or silicon, and nitrogen gas.

摘要翻译： 取向非晶碳膜含有C为主要成分，3〜20at。 N的百分比，超过0。 ％，不超过20。 H的百分比，当C的总量取为100时。 ％，具有sp2混合轨道（Csp2）的C的量不小于70at。 ％和小于100。 ％和（002）面的石墨沿厚度方向取向。 该膜具有新颖的结构并具有高电导率。 该膜可以通过DC等离子体CVD法形成，其中通过施加不低于1500V的电压而产生放电，包括至少一种选自含有Csp2的碳环化合物的气体和 含有Csp2的含氮杂环化合物，氮和/或硅，以及氮气。

公开(公告)号：US20110284964A1

公开(公告)日：2011-11-24

申请号：US13179214

申请日：2011-07-08

申请人： Tomoaki IKEGAMI ,  Kazuyuki Nakanishi ,  Masaki Tamaru

发明人： Tomoaki IKEGAMI ,  Kazuyuki Nakanishi ,  Masaki Tamaru

IPC分类号： H01L29/772

CPC分类号： H01L27/0207 ,  H01L27/0248 ,  H01L27/0255 ,  H01L27/0629 ,  H01L27/11898

摘要： A standard cell has gate patterns extending in Y direction and arranged at an equal pitch in X direction. End portions of the gate patterns are located at the same position in Y direction, and have an equal width in X direction. A diode cell is located next to the standard cell in Y direction, and includes a plurality of opposite end portions formed of gate patterns that are opposed to the end portions, in addition to a diffusion layer which functions as a diode.

摘要翻译： 标准单元具有沿Y方向延伸的栅极图案，并且在X方向上以等间距排列。 栅极图案的端部位于Y方向上的相同位置，并且在X方向上具有相等的宽度。 除了用作二极管的扩散层之外，二极管单元位于Y方向上的标准单元旁边，并且包括与端部相对的栅极图案形成的多个相对端部。

公开(公告)号：US07800140B2

公开(公告)日：2010-09-21

申请号：US12048837

申请日：2008-03-14

申请人： Kazuyuki Nakanishi ,  Hidetoshi Nishimura ,  Tomoaki Ikegami

发明人： Kazuyuki Nakanishi ,  Hidetoshi Nishimura ,  Tomoaki Ikegami

IPC分类号： H01L27/10

CPC分类号： H01L27/0203 ,  H01L27/11807

摘要： A semiconductor integrated circuit is provided which entails no increase in the correction time of OPC and in which non-uniformity in the gate lengths due to the optical proximity effects is surely suppressed. A plurality of standard cells (C1, C2, C3, . . . ), each including gates G extended in the vertical direction, are aligned in the transverse direction to form a standard cell row. A plurality of the standard cell rows are located side by side in the vertical direction to form a standard cell group. Each of the standard cell rows has a terminal standard cell Ce at least one end of the standard cell row. The terminal standard cell Ce includes two or more supplementary gates, each of which is any of a dummy gate and a gate of an inactive transistor.

摘要翻译： 提供了一种半导体集成电路，其不需要增加OPC的校正时间，并且可靠地抑制由于光学邻近效应引起的栅极长度的不均匀性。 多个标准单元（C1，C2，C3 ...）各自包括在垂直方向上延伸的栅极G，在横向方向上排列以形成标准单元行。 多个标准单元行在垂直方向上并排设置以形成标准单元组。 每个标准单元行在标准单元行的至少一端具有端子标准单元Ce。 终端标准单元Ce包括两个或更多个辅助栅极，每个补充栅极是无源晶体管的伪栅极和栅极中的任一个。

公开(公告)号：US20090169968A1

公开(公告)日：2009-07-02

申请号：US12300179

申请日：2007-05-22

申请人： Takashi Iseki ,  Yuka Yamada ,  Kazuyuki Nakanishi ,  Tadashi Oshima ,  Hiroyuki Mori ,  Toshio Horie ,  Ken-ichi Suzuki ,  Gaku Kitahara

发明人： Takashi Iseki ,  Yuka Yamada ,  Kazuyuki Nakanishi ,  Tadashi Oshima ,  Hiroyuki Mori ,  Toshio Horie ,  Ken-ichi Suzuki ,  Gaku Kitahara

IPC分类号： H01M2/14 ,  C23C16/44 ,  B32B15/04 ,  B32B9/04 ,  H01M8/02 ,  C09K3/00

CPC分类号： C23C16/26 ,  H01M8/0206 ,  H01M8/0213 ,  H01M8/0228 ,  Y02P70/56 ,  Y10T428/30 ,  Y10T428/31504 ,  Y10T428/31678

摘要： The amorphous carbon film of the present invention is an amorphous carbon film comprising carbon and hydrogen, wherein the amorphous carbon film contains not more than 30 atomic % (excluding 0%) of hydrogen and, when the entire amount of the carbon is taken as 100 atomic %, carbon having an sp2 hybrid orbital is present in an amount of not less than 70 atomic % and less than 100 atomic %. Conductivity is imparted to an amorphous carbon film by controlling the contents of hydrogen, Csp3 and the like to increase a structure comprising Csp2. This amorphous carbon film can be formed by plasma CVD using a reaction gas containing one or more gases selected from a carbocyclic compound gas containing carbon having an sp2 hybrid orbital, and a heterocyclic compound gas containing carbon having an sp2 hybrid orbital and silicon and/or nitrogen. By forming the amorphous carbon film on a surface of a substrate, a conductive member can be obtained.

摘要翻译： 本发明的无定形碳膜是含有碳和氢的无定形碳膜，其中无定形碳膜含有不超过30原子％（不包括0％）的氢，当碳的总量为100时 原子％，具有sp2混合轨道的碳以不小于70原子％且小于100原子％的量存在。 通过控制氢，Csp3等的含量来增加包含Csp2的结构，赋予无定形碳膜的电导率。 该无定形碳膜可以通过使用含有一种或多种气体的反应气体等离子体CVD形成，所述气体选自含有sp2混合轨道的碳的碳环化合物气体和含有sp2混合轨道和硅的碳的杂环化合物气体和/或 氮。 通过在基板的表面上形成非晶碳膜，可以获得导电部件。

公开(公告)号：US07537835B2

公开(公告)日：2009-05-26

申请号：US10488290

申请日：2002-09-25

申请人： Hiroyuki Mori ,  Hideo Tachikawa ,  Masaru Okuyama ,  Mamoru Tohyama ,  Toshihide Ohmori ,  Kazuyuki Nakanishi

发明人： Hiroyuki Mori ,  Hideo Tachikawa ,  Masaru Okuyama ,  Mamoru Tohyama ,  Toshihide Ohmori ,  Kazuyuki Nakanishi

IPC分类号： B32B9/00

CPC分类号： F16C33/12 ,  F16C33/043 ,  F16D69/02 ,  F16D2250/0038 ,  Y10T428/265 ,  Y10T428/30

摘要： Under wet sliding conditions using drivetrain system lubricating oils, a high frictional sliding member exhibiting a high friction coefficient, a favorable μ−v characteristic stably, excellent wear resistance, and low mating-member aggressiveness is provided. The present invention is a wet sliding member comprising: a substrate composed of metal, ceramics, or resin; and an amorphous hard carbon film formed integrally on a surface of the substrate, having a surface, at least a part of which is turned into a sliding surface for sliding under wet conditions, and containing at least either one of Si and N in an amount of from 1 to 50 atomic %.

摘要翻译： 在使用传动系统润滑油的湿滑动条件下，提供了表现出高摩擦系数的高摩擦滑动构件，稳定的良好的μ-v特性，优异的耐磨性和低配合构件侵蚀性。 本发明是一种湿滑动构件，包括：由金属，陶瓷或树脂构成的基底; 以及一体地形成在所述基板的表面上的无定形硬碳膜，所述无定形硬碳膜具有表面，所述表面的至少一部分被变成用于在潮湿条件下滑动的滑动表面，并且包含至少一个Si和N的量， 为1至50原子％。

公开(公告)号：US07475375B2

公开(公告)日：2009-01-06

申请号：US11354936

申请日：2006-02-16

申请人： Kazuyuki Nakanishi

发明人： Kazuyuki Nakanishi

IPC分类号： G06F17/50

CPC分类号： H01L27/0207 ,  H01L27/11807

摘要： A rectangular opening is formed in a power supply line which is shared between cell rows. A connection to a substrate potential supply line is ensured in the rectangular opening. Specifically, a semiconductor device includes a plurality of cell rows each including a plurality of standard cells arranged therein, a first power supply line for supplying a first potential to each of the standard cells, and a second power supply line for supplying a second potential to each of the standard cells, the second power supply line being electrically separated from the first power supply line. At least two standard cells share the first power supply line through a first interconnect provided in an interconnect layer and share the second power supply line through a second interconnect provided in the interconnect layer.

摘要翻译： 在单元列之间共享的电源线中形成矩形开口。 在矩形开口中确保与衬底电位供给线的连接。 具体地，半导体器件包括多个单元行，每个单元行包括布置在其中的多个标准单元，用于向每个标准单元提供第一电位的第一电源线和用于向第二电位提供第二电位的第二电源线 每个标准单元，第二电源线与第一电源线电隔离。 至少两个标准单元通过设置在互连层中的第一互连共享第一电源线，并且通过设置在互连层中的第二互连共享第二电源线。

公开(公告)号：US20080188383A1

公开(公告)日：2008-08-07

申请号：US11720154

申请日：2005-11-24

申请人： Takashi Iseki ,  Hideo Tachikawa ,  Hiroyuki Mori ,  Kazuyuki Nakanishi ,  Munehisa Matsui ,  Shintaro Igarashi ,  Fumio Shimizu ,  Yoshinari Tsuchiya ,  Tadashi Oshima

发明人： Takashi Iseki ,  Hideo Tachikawa ,  Hiroyuki Mori ,  Kazuyuki Nakanishi ,  Munehisa Matsui ,  Shintaro Igarashi ,  Fumio Shimizu ,  Yoshinari Tsuchiya ,  Tadashi Oshima

IPC分类号： F16C33/20 ,  H05H1/24

CPC分类号： C23C16/26 ,  Y10T428/30

摘要： An amorphous carbon film includes carbon as a major component, and silicon in an amount of from 0.1 atomic % or more to 10 atomic % or less when the entire amorphous carbon film is taken as 100 atomic %. The carbon is composed of carbon having an sp2 hybrid orbital in an amount of from 60 atomic % or more to 90 atomic % or less when the entire carbon amount is taken as 100 atomic %. Also disclosed is a process for producing the amorphous carbon film.

摘要翻译： 当非晶碳膜的整体为100原子％时，无定形碳膜以碳为主成分，硅为0.1原子％以上且10原子％以下。 当全部碳量为100原子％时，碳由具有60原子％以上至90原子％以下的量的sp 2 SUB混合轨道的碳构成。 还公开了一种制备无定形碳膜的方法。