摘要:
An MR element in a CPP structure includes a spacer layer made of Cu, a magnetic pinned layer containing CoFe and a free layer containing CoFe that are laminated to sandwich the spacer layer. The free layer is located below the magnetic pinned layer. The free layer is oriented in a (001) crystal plane, the spacer layer is formed and oriented in a (001) crystal plane on the (001) crystal plane of the free layer. Therefore, in a low resistance area where an area resistivity (AR) of the MR element is, for example, lower than 0.3 Ω·μm2, an MR element that has a large variation of a resistance is obtained.
摘要:
A thin-film magnetic head comprising an inductive element including at least: a lower magnetic pole; a write gap layer; and an upper magnetic pole opposed to the lower magnetic pole through the write gap layer, a width WP2 in a track-width direction at a facing-to-magnetic-medium top end of the upper magnetic pole being larger than a width WP1 in the track-width direction at a facing-to-magnetic-medium top end of the lower magnetic pole, and a distance FPDP2 between the top end of the upper magnetic pole and a flare point of the upper magnetic pole being smaller than a distance FPDP1 between the top end of the lower magnetic pole and a flare point of the lower magnetic pole, is provided.
摘要:
An NiCr seed layer based bottom spin valve sensor element having a synthetic antiferromagnet pinned (SyAP) layer and a capping layer comprising either a single specularly reflecting nano-oxide layer (NOL) or a bi-layer comprising a non-metallic layer and a specularly reflecting nano-oxide layer. As a result of their structure and the method of their fabrication, these elements have higher GMR ratios and lower resistances than elements of the prior art.
摘要:
A method for forming a bottom spin valve sensor having a synthetic antiferromagnetic pinned (SyAP) layer, antiferromagnetically coupled to a pinning layer, in which one of the layers of the SyAP is formed as a three layer lamination that contains a specularly reflecting oxide layer of FeTaO. The sensor formed according to this method has an extremely high GMR ratio and exhibits good pinning strength.
摘要:
In a magnetic recording medium comprising a length of a non-magnetic plastic substrate and a magnetic thin layer of Co or Co-Ni or Co-Ni-Cr formed thereon, when the coercive force of the medium is measured by changing the measuring direction in a plane defined by a longitudinal direction of the substrate and a direction normal to the major surface of the substrate, the following relationship is met:(Hc.sub.max -Hc.sub.min)/Hc(0).ltoreq.0.9where Hc.sub.max is the maximum coercive force, Hc.sub.min is the minimum coercive force, and Hc(0) is a coercive force in the longitudinal direction of the substrate.
摘要:
A magnetic recording medium which comprises a first layer formed on a substrate and comprising Co; Co and Ni; Co and O; or Co, Ni and O, and a second magnetic layer formed on the first magnetic layer and comprising Co and Cr at a weight ratio of Co/Cr being from 2.5 to 8.
摘要:
A magnetoresistive device with CPP structure, comprising a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed with said nonmagnetic intermediate layer interposed between them, wherein each of said first and second ferromagnetic layers comprises a sensor area joining to the nonmagnetic intermediate layer and a magnetization direction control area that extends further rearward from the position of the rear end of said nonmagnetic intermediate layer; a magnetization direction control multilayer arrangement is interposed at an area where the magnetization direction control area for said first ferromagnetic layer is opposite to the magnetization direction control area for said second ferromagnetic layer to produce magnetizations of the said first and second ferromagnetic layers which are antiparallel with each other; and said sensor area is provided at both width direction ends with biasing layers working such that the mutually antiparallel magnetizations of said first and second ferromagnetic layers intersect in substantially orthogonal directions.
摘要:
A thin-film magnetic head having microwave magnetic exciting function, includes a write magnetic field production unit for producing, in response to a write signal, a write magnetic field to be applied into a magnetic recording medium, a line conductor of a microwave radiator of a plane-structure type, formed independent from the write magnetic field production means, for radiating, by feeding there through a microwave excitation current, a microwave band resonance magnetic field with a frequency equal to or in a range near a ferromagnetic resonance frequency FR of the magnetic recording medium, and two conductors separated from the line conductor in a direction perpendicular to a track-width direction of the thin-film magnetic head and parallel to an ABS of the thin-film magnetic head. The microwave radiator is an inverted micro strip waveguide having the line conductor and a ground conductor constituted by the magnetic recording medium. A section of the line conductor, perpendicular to the track-width direction has a rectangular shape. An aspect ratio B/A is within a region from 0.15 to 1.2 or within a region of 7 or more, where A is a length in a lateral direction of the line conductor, which is in parallel with the ABS and perpendicular to the track-width direction, and B is a length in a longitudinal direction of the line conductor, which is perpendicular to the air bearing surface.
摘要:
An examination method is structured, with respect to a magnetization direction of an orthogonalizing bias function part formed on a posterior part of an magnetoresistance (MR) effect element, of changing the magnetization direction of the orthogonalizing bias function part between a first magnetization forming mode, wherein the magnetization direction is from the anterior side of the element to the posterior side thereof, and a second magnetization forming mode, wherein the magnetization direction is from the posterior side of the element to the anterior side thereof, measuring the output waveform of the element in response to an external magnetic field for each magnetization forming mode and checking the state of the output waveforms of both modes in order to examine whether or not the magnetization directions of the first magnetic layer and the second magnetic layer, both of which functions as free layers, are antiparallel to each other in the track width direction before the orthogonalizing bias function part starts functioning. With the structure, it is realized to easily examine whether or not the magnetization directions of two free layers have surely been made antiparallel to each other before operating the orthogonalizing bias function part of an element.
摘要:
A magnetoresistive device comprising a magnetoresistive unit, an upper shield layer and a lower shield shield layer stacked such that the magnetoresistive unit is held between them. The magnetoresistive unit comprises a nonmagnetic metal intermediate layer, a first ferromagnetic layer and a second ferromagnetic layer stacked with the nonmagnetic metal intermediate layer in the middle. When no bias magnetic field is applied, the first and second ferromagnetic layers have mutually antiparallel magnetizations. The magnetoresistive unit further comprises first and second side shield layers, and first and second biasing layers located to be magnetically coupled to the first and second side shield layers, wherein magnetic fluxes fed from the bias magnetic fields pass through the first and second side shield layers positioned in proximity to the magnetoresistive unit such that the magnetizations of the first and second ferromagnetic layers become substantially orthogonal to each other.