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    Aircraft fuel tank and sensor system
    41.
    发明授权
    Aircraft fuel tank and sensor system 失效
    飞机油箱和传感器系统

    公开(公告)号：US07334464B2

    公开(公告)日：2008-02-26

    申请号：US11226805

    申请日：2005-09-14

    申请人： Kenichi Goto

    发明人： Kenichi Goto

    IPC分类号： G01F23/00

    CPC分类号： B64D37/08 ,  G01F23/00

    摘要： The aircraft tank and gauge system of the present invention provides a fuel tank with a gauge chamber located generally aligned with the tank center of gravity and that has a general vertical orientation when the aircraft is level. The gauge chamber extends from the top of the tank to a height generally equivalent to a high collection point on the tank and/or extends from the bottom of the tank to a height generally equivalent to a low collection point on the tank. As the aircraft pitches and rolls, fuel within a complex-shaped tank, will be measured by a sensor in the gauge chamber. In order to prevent any type of vapor blockage in the gauge chamber, a first vent extends from the bottom of the gauge chamber to the low collection point of the tank and a second vent extends from the top of the gauge chamber to the high collection point of the tank.

    摘要翻译： 本发明的飞机罐和测量系统提供一个具有大致与油箱重心对准的测量室的燃料箱，并且当飞机处于水平时具有一般的垂直方向。 计量室从罐的顶部延伸到通常相当于罐上的高收集点的高度和/或从罐的底部延伸到通常相当于罐上的低收集点的高度。 随着飞机的间距和滚动，复杂形状的油箱内的燃料将由测量室中的传感器测量。 为了防止量规室中的任何类型的蒸汽堵塞，第一通气口从量规室的底部延伸到罐的低收集点，第二通气口从测量室的顶部延伸到高收集点 的坦克。

    Aircraft fuel tank and sensor system
    42.
    发明申请
    Aircraft fuel tank and sensor system 失效
    飞机油箱和传感器系统

    公开(公告)号：US20070234795A1

    公开(公告)日：2007-10-11

    申请号：US11226805

    申请日：2005-09-14

    申请人： Kenichi Goto

    发明人： Kenichi Goto

    IPC分类号： G01F22/00 ,  G01F23/00 ,  B64D37/06 ,  B64D37/08 ,  B64D43/00

    CPC分类号： B64D37/08 ,  G01F23/00

    摘要： The aircraft tank and gauge system of the present invention provides a fuel tank with a gauge chamber located generally aligned with the tank center of gravity and that has a general vertical orientation when the aircraft is level. The gauge chamber extends from the top of the tank to a height generally equivalent to a high collection point on the tank and/or extends from the bottom of the tank to a height generally equivalent to a low collection point on the tank. As the aircraft pitches and rolls, fuel within a complex-shaped tank, will be measured by a sensor in the gauge chamber. In order to prevent any type of vapor blockage in the gauge chamber, a first vent extends from the bottom of the gauge chamber to the low collection point of the tank and a second vent extends from the top of the gauge chamber to the high collection point of the tank.

    摘要翻译： 本发明的飞机罐和测量系统提供一个具有大致与油箱重心对准的测量室的燃料箱，并且当飞机处于水平时具有一般的垂直方向。 计量室从罐的顶部延伸到通常相当于罐上的高收集点的高度和/或从罐的底部延伸到通常相当于罐上的低收集点的高度。 随着飞机的间距和滚动，复杂形状的油箱内的燃料将由测量室中的传感器测量。 为了防止量规室中的任何类型的蒸汽堵塞，第一通气口从量规室的底部延伸到罐的低收集点，第二通气口从测量室的顶部延伸到高收集点 的坦克。

    Manufacture of semiconductor device
    43.
    发明授权
    Manufacture of semiconductor device 失效
    制造半导体器件

    公开(公告)号：US06340617B1

    公开(公告)日：2002-01-22

    申请号：US09450507

    申请日：1999-11-30

    申请人： Kenichi Goto

    发明人： Kenichi Goto

    IPC分类号： H01L21336

    CPC分类号： H01L29/6659 ,  H01L21/823835 ,  H01L29/4933 ,  H01L29/665

    摘要： A method of manufacturing a semiconductor device having shallow p-n junctions and silicide regions, capable of meeting both requirements of a high annealing temperature and a low annealing temperature. A lamination of two films made of materials having different etching characteristics is formed on the surface of a silicon substrate, covering an insulated gate electrode structure. The upper film is anisotropically etched to form side wall spacers. Impurity ions are implanted into a surface layer of the silicon substrate and sufficiently activated to a first level. The lower film is removed by using as a mask the side wall spacers, and a metal film capable of being silicided is deposited to perform a first silicidation reaction. The insulated gate electrode is exposed and impurity ions are implanted shallowly in the surface layer of the silicon substrate. The impurities are activated to a second level lower than the first level to perform at the same time a second silicidation reaction for silicide formed by the first silicidation reaction.

    摘要翻译： 一种制造具有浅p-n结和硅化物区域的半导体器件的方法，能够满足高退火温度和低退火温度的要求。 在硅衬底的表面上形成覆盖绝缘栅电极结构的由具有不同蚀刻特性的材料制成的两个膜的层叠。 上膜被各向异性蚀刻以形成侧壁间隔物。 将杂质离子注入到硅衬底的表面层中并充分激活至第一层。 通过使用侧壁间隔物和能够被硅化的金属膜作为掩模去除下部膜，以进行第一次硅化反应。 暴露绝缘栅电极，并将杂质离子浅地注入到硅衬底的表面层中。 杂质被激活到比第一级低的第二级，同时对通过第一硅化反应形成的硅化物进行第二硅化反应。

    Fuel injection control arrangement for internal combustion engine with abnormality detection function therein
    44.
    发明授权
    Fuel injection control arrangement for internal combustion engine with abnormality detection function therein 失效
    具有异常检测功能的内燃机的燃油喷射控制装置

    公开(公告)号：US06283108B1

    公开(公告)日：2001-09-04

    申请号：US09386955

    申请日：1999-08-31

    申请人： Koji Matsufuji ,  Toshio Hori ,  Masahiro Toyohara ,  Kenichi Goto

    发明人： Koji Matsufuji ,  Toshio Hori ,  Masahiro Toyohara ,  Kenichi Goto

    IPC分类号： F02D4122

    CPC分类号： F02D41/3863 ,  F02D41/221 ,  F02D41/222 ,  F02D2041/2027 ,  F02D2041/223 ,  F02D2041/224 ,  F02D2200/0602

    摘要： A control arrangement for an internal combustion engine which includes a fuel supply system, an air/fuel ratio control system, an abnormality diagnoser which diagnoses a possible abnormality in the fuel supply system, when the pressure of the pressurized fuel in the fuel supply system detected by a fuel pressure senor exceeds predetermined upper and lower limits determined by a control duty for an electrically controlled pressure regulator, and an abnormal element decider which decides an abnormality either in the fuel pressure sensor or in the electrically controlled pressure regulator based on an amount representing an air/fuel ratio status including the actual air/fuel ratio and the air/fuel ratio feed back control amount extracted from the air/fuel ratio control system for the internal combustion engine, when the abnormality diagnoser diagnoses an abnormality in the fuel supply system.

    摘要翻译： 一种内燃机的控制装置，包括燃料供给系统，空燃比控制系统，诊断燃料供给系统中的可能异常的异常诊断装置，当检测到燃料供给系统中的加压燃料的压力时 通过燃料压力传感器超过由电控压力调节器的控制负载确定的预定上限和下限，以及在燃料压力传感器或电控压力调节器中基于表示的量的量来决定异常的异常元件判定器 当所述异常诊断器诊断燃料供给系统的异常时，包括从所述内燃机的空燃比控制系统提取的实际空燃比和所述空/燃比反馈控制量的空燃比状态 。

    Manufacture of semiconductor device with salicide electrode
    46.
    发明授权
    Manufacture of semiconductor device with salicide electrode 失效
    制造具有自杀电极的半导体器件

    公开(公告)号：US06197646B1

    公开(公告)日：2001-03-06

    申请号：US08693635

    申请日：1996-08-09

    申请人： Kenichi Goto ,  Atsuo Fushida ,  Tatsuya Yamazaki ,  Yuzuru Ota ,  Hideo Takagi ,  Keisuke Okazaki

    发明人： Kenichi Goto ,  Atsuo Fushida ,  Tatsuya Yamazaki ,  Yuzuru Ota ,  Hideo Takagi ,  Keisuke Okazaki

    IPC分类号： H01L21336

    CPC分类号： H01L29/665 ,  H01L21/28052 ,  H01L21/28518 ,  H01L27/1104 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/7846

    摘要： A method of manufacturing a semiconductor device with a silicide electrode is provided which can form a good contact even at a scaled-down pattern. The method includes the steps of: forming an insulated gate structure with side wall spacer on a p-type region of a silicon (Si) substrate; implanting arsenic ions in source/drain regions at a dose less than 5×1015 cm−2; forming a laminated layer of a Co film and a TiN film on the surface of the substrate; heating the substrate to let the Co film react with an underlying Si region for silicidation; and removing the TiN film. Another method includes the steps of: forming a field oxide film on the surface of a silicon (Si) substrate for element isolation; implanting ions in the surface region of the Si substrate defined by the field oxide film to form a conductive silicon region; depositing a Co film on the Si surface extending to the field oxide film; heating the Si substrate under such conditions of a time and a temperature that does not allow CoSi2 to be formed, and lets the Co film react with the conductive silicon region for silicidation, thereby forming Co silicide; removing an unreacted Co film; and subjecting the Si substrate to another heat treatment to convert the Co silicide to CoSi2.

    摘要翻译： 提供一种制造具有硅化物电极的半导体器件的方法，即使按比例缩小的图案也能形成良好的接触。 该方法包括以下步骤：在硅（Si）衬底的p型区域上形成具有侧壁间隔物的绝缘栅结构; 以小于5×10 15 cm -2的剂量将砷离子注入源/漏区; 在所述基板的表面上形成Co膜和TiN膜的层叠层; 加热衬底以使Co膜与下面的Si区域反应以进行硅化; 并除去TiN膜。 另一种方法包括以下步骤：在用于元件分离的硅（Si）衬底的表面上形成场氧化膜; 在由场氧化膜限定的Si衬底的表面区域中注入离子以形成导电硅区; 在延伸到场氧化膜的Si表面上沉积Co膜; 在不能形成CoSi 2的时间和温度的条件下加热Si衬底，并使Co膜与导电硅区域反应硅化，从而形成Co硅化物; 去除未反应的Co膜; 并对Si衬底进行另一次热处理以将Co硅化物转化为CoSi 2。

    Control apparatus of direct injection spark ignition type internal combustion engine
    49.
    发明授权
    Control apparatus of direct injection spark ignition type internal combustion engine 失效
    直喷式火花点火式内燃机控制装置

    公开(公告)号：US5983854A

    公开(公告)日：1999-11-16

    申请号：US106761

    申请日：1998-06-30

    申请人： Kenichi Machida ,  Satoru Watanabe ,  Kenichi Goto ,  Hideyuki Tamura

    发明人： Kenichi Machida ,  Satoru Watanabe ,  Kenichi Goto ,  Hideyuki Tamura

    IPC分类号： F02B17/00 ,  F02D41/02 ,  F02D41/08 ,  F02D41/22 ,  F02D41/26 ,  F02D41/30 ,  F02D41/34 ,  F02D45/00

    CPC分类号： F02D41/22 ,  F02D41/266 ,  F02D41/3076 ,  F02D41/3029

    摘要： The present invention securely prevents the erroneous switching of the combustion mode to the stratified charge combustion, and avoids deterioration of the driving performance. In order to do so, apart from a software determination device inside a main CPU for performing the permission determination on the switching to the stratified charge combustion based on an input signal related to the engine drive condition, a hardware detection circuit (gate array) is equipped for performing the permission determination on the switching to the stratified charge combustion mode based on the input signal related to the engine drive condition. The main CPU is equipped with a combustion mode order device for finally ordering the stratified charge combustion by permitting the switching to the stratified charge combustion only when the two permission determinations both permit the switching to the stratified charge combustion. Further, a sub CPU is mounted which is equipped with a fail-safe device for based on the final permission determination from the main CPU and the permission determination from the hardware determination device, performing a fail-safe process when the two determinations are inconsistent.

    摘要翻译： 本发明可以可靠地防止燃烧模式向分层充气燃烧的错误切换，避免驱动性能的劣化。 为了这样做，除了主CPU内的软件确定装置，基于与发动机驱动条件相关的输入信号来执行对分层充电燃烧的切换的许可确定，硬件检测电路（门阵列）是 基于与发动机驱动条件相关的输入信号，进行对分层充气燃烧模式切换的允许判定。 主CPU配备有燃烧模式订单装置，用于最终订购分层充气燃烧，只有当两个允许确定都允许切换到分层充气燃烧时，允许切换分层充气燃烧。 此外，安装有基于来自主CPU的最终许可确定的故障安全装置和来自硬件确定装置的许可确定的子CPU，当两个确定不一致时执行故障安全进程。

    Fuel vapor processor diagnostic device
    50.
    发明授权
    Fuel vapor processor diagnostic device 失效
    燃油蒸汽处理器诊断装置

    公开(公告)号：US5911209A

    公开(公告)日：1999-06-15

    申请号：US964869

    申请日：1997-11-05

    申请人： Yasuo Kouda ,  Kenichi Goto ,  Hideharu Kadooka

    发明人： Yasuo Kouda ,  Kenichi Goto ,  Hideharu Kadooka

    IPC分类号： F02M25/08 ,  F02M37/00 ,  F02M37/04

    CPC分类号： F02M25/0809

    摘要： In a fuel vapor processor for use with an engine provided with a fuel tank comprising a filler tube which fits on a fuel nozzle for refueling, the presence of leaks of fuel vapor is diagnosed according to a variation of a test pressure has been introduced into a purge passage. If refueling of the fuel tank is being performed during the leak diagnosis, an escape vent for air in the fuel tank is provided by connecting the canister to the atmosphere so that smooth refueling is performed.

    摘要翻译： 在一种用于与设置有燃料箱的发动机一起使用的燃料蒸汽处理器中，燃料箱包括装配在用于加油的燃料喷嘴上的填充管，根据测试压力的变化被诊断为存在燃料蒸气的泄漏已被引入 清洗通道。 如果在泄漏诊断期间正在进行燃料箱的加油，则通过将罐连接到大气来提供燃料箱中的空气的排气口，从而进行平滑的加油。