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137 条记录 (耗时 0.037 秒)

    Two-piece magnetic shield having improved heat dissipation
    41.
    发明申请
    Two-piece magnetic shield having improved heat dissipation 有权
    具有改善散热性能的两件式磁屏蔽

    公开(公告)号：US20050094319A1

    公开(公告)日：2005-05-05

    申请号：US10696431

    申请日：2003-10-29

    申请人： Cherng-Chyi Han ,  Rod Lee ,  Mao-Min Chen ,  Pokang Wang

    发明人： Cherng-Chyi Han ,  Rod Lee ,  Mao-Min Chen ,  Pokang Wang

    IPC分类号： G11B5/127 ,  G11B5/31 ,  G11B5/33

    CPC分类号： G11B5/3136 ,  G11B5/3133 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

    摘要： Problems such as thermal pole tip protrusion result from thermal mismatch between the alumina and pole material during the writing process. This, and similar problems due to inadequate heat dissipation, have been overcome by dividing the bottom shield into two pieces both of which sit on top of a non-magnetic heat sink. Heat generated by the coil during writing is transferred to the non-magnetic heat sink whence it gets transferred to the substrate. With this approach, the head not only benefits from less field disturbance due to the small shield but also improves heat dissipation from the additional heat sink

    摘要翻译： 在写入过程中，由于氧化铝和极材料之间的热失配，导致热极尖突出的问题。 通过将底部屏蔽分成两个位于非磁性散热器顶部的两个部件，已经克服了由于不充分散热引起的这种和类似的问题。 在写入期间由线圈产生的热量被传递到非磁性散热器，因为它被传送到基板。 采用这种方法，由于小屏蔽，头部不但受益于较少的场干扰，还可以改善附加散热器的散热

    Thin read gap magnetoresistive (MR) sensor element and method for fabrication thereof
    43.
    发明授权
    Thin read gap magnetoresistive (MR) sensor element and method for fabrication thereof 有权
    薄读磁隙（MR）传感元件及其制造方法

    公开(公告)号：US06307721B1

    公开(公告)日：2001-10-23

    申请号：US09148558

    申请日：1998-09-04

    申请人： Mao-Min Chen ,  Cherng-Chyi Han ,  Cheng T. Horng

    发明人： Mao-Min Chen ,  Cherng-Chyi Han ,  Cheng T. Horng

    IPC分类号： G11B539

    CPC分类号： G11B5/3954 ,  G11B5/3903

    摘要： A magnetoresistive (MR) sensor element and a method for fabricating the magnetoresistive (MR) sensor element. There is first provided a substrate. There is then formed over the substrate a first shield layer. There is then formed upon the first shield layer a first dielectric spacer layer. There is then formed upon the first dielectric spacer layer a patterned magnetoresistive (MR) layer. There is then formed adjacent to and electrically communicating with a pair of opposite ends of the patterned magnetoresistive (MR) layer a pair of patterned conductor lead layers to define a trackwidth of the patterned magnetoresistive (MR) layer. There is then formed upon the pair of patterned conductor lead layers and upon the patterned magnetoresistive (MR) layer at the trackwidth of the patterned magnetoresistive (MR) layer a blanket second dielectric spacer layer. Finally, there is then formed upon the blanket second dielectric spacer layer a second shield layer, where a first thickness of the blanket second dielectric spacer layer separating a patterned conductor lead layer within the pair of patterned conductor lead layers from the second shield layer is greater than a second thickness of the blanket second dielectric spacer layer separating the patterned magnetoresistive (MR) layer from the second shield layer within the trackwidth of the patterned magnetoresistive (MR) layer. The method contemplates a magnetoresistive (MR) sensor element fabricated in accord with the method.

    摘要翻译： 磁阻（MR）传感器元件和制造磁阻（MR）传感器元件的方法。 首先提供基板。 然后在衬底上形成第一屏蔽层。 然后在第一屏蔽层上形成第一电介质隔离层。 然后在第一电介质隔离层上形成图案化磁阻（MR）层。 然后形成为与图案化磁阻（MR）层的一对相对端相邻并与其电连通一对图案化的导体引线层，以限定图案化磁阻（MR）层的轨道宽度。 然后形成在一对图案化导体引线层上，并且在图案化磁阻（MR）层的轨道宽度处的图案化磁阻（MR）层上形成毯式第二介电隔离层。 最后，然后在第二绝缘间隔层上形成第二屏蔽层，其中第一厚度的第二绝缘隔离层将第一屏蔽层内的图案化导体引线层中的图案化导体引线层分离， 比在图案化磁阻（MR）层的轨道宽度内将图案化磁阻（MR）层与第二屏蔽层分离的第二厚度的第二介电隔离层的厚度。 该方法考虑了根据该方法制造的磁阻（MR）传感器元件。

    Magnetic recording sensor with stabilizing shield
    44.
    发明授权
    Magnetic recording sensor with stabilizing shield 有权
    带稳定屏蔽的磁记录传感器

    公开(公告)号：US06358635B1

    公开(公告)日：2002-03-19

    申请号：US09467138

    申请日：1999-12-20

    申请人： Tai Min ,  Otto Voegeli ,  Rongfu Xiao ,  Cherng-Chyi Han ,  Po-Kang Wang

    发明人： Tai Min ,  Otto Voegeli ,  Rongfu Xiao ,  Cherng-Chyi Han ,  Po-Kang Wang

    IPC分类号： G11B566

    CPC分类号： B82Y10/00 ,  G11B5/11 ,  G11B5/115 ,  G11B5/3109 ,  G11B5/313 ,  G11B5/3903 ,  G11B5/66 ,  Y10S428/90 ,  Y10T428/1171 ,  Y10T428/1193 ,  Y10T428/265

    摘要： A magnetic shielding element for a magnetic recording and sensing device which prevents the problem of pop-corn noise or covariance of amplitude noise in the magnetic sensing device. The shielding element has a layer of antiferromagnetic exchange material formed on a layer of single domain first ferromagnetic material. The single domain first ferromagnetic material is stabilized by the antiferromagnetic exchange material. A layer of non-magnetic metal is then formed on the layer of antiferromagnetic exchange material and a layer of second ferromagnetic material is formed on the layer of non-magnetic metal to complete the shielding element. When the single domains of the first ferromagnetic material are disturbed by the strong magnetic fields of a write cycle they relax with a relaxation time of pico seconds and are fully relaxed before a read cycle begins. The fully relaxed layer of first ferromagnetic material then shields the magnetic sensing device from magnetic field fluctuations caused by the slower relaxation of the domains in the layer of second ferromagnetic material during a read cycle.

    摘要翻译： 一种用于磁记录和感测装置的磁屏蔽元件，其防止弹性玉米噪声或磁感测装置中振幅噪声的协方差问题。 屏蔽元件具有形成在单畴第一铁磁材料层上的反铁磁交换材料层。 单畴第一铁磁材料由反铁磁交换材料稳定。 然后在反铁磁交换材料层上形成一层非磁性金属，并在非磁性金属层上形成一层第二铁磁材料，以完成屏蔽元件。 当第一铁磁材料的单个畴被写入周期的强磁场干扰时，它们以微微秒的弛豫时间放松，并且在读周期开始之前完全松弛。 第一铁磁材料的完全松弛层然后屏蔽磁感测装置免受在读周期期间由第二铁磁材料层中的畴的较慢松弛引起的磁场波动。

    ABS through aggressive stitching
    45.
    发明授权
    ABS through aggressive stitching 失效
    ABS通过积极的拼接

    公开(公告)号：US07251102B2

    公开(公告)日：2007-07-31

    申请号：US10782496

    申请日：2004-02-19

    申请人： Cherng-Chyi Han ,  Mao-Min Chen ,  Laurie Lauchlan ,  Lei Zhang

    发明人： Cherng-Chyi Han ,  Mao-Min Chen ,  Laurie Lauchlan ,  Lei Zhang

    IPC分类号： G11B5/127

    CPC分类号： G11B5/33 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/4906 ,  Y10T29/49062 ,  Y10T29/49064

    摘要： Aggressive (i.e. tight tolerance) stitching offers several advantages for magnetic write heads but at the cost of some losses during pole trimming. This problem has been overcome by replacing the alumina filler layer, that is used to protect the stitched pole during trimming, with a layer of electro-plated material. Because of the superior step coverage associated with the plating method of deposition, pole trimming can then proceed without the introduction of stresses to the stitched pole while it is being trimmed.

    摘要翻译： 积极（即紧公差）缝合为磁性写入头提供了几个优点，但是在极修整期间以一些损失为代价。 通过用一层电镀材料代替在修整期间用于保护缝合极的氧化铝填料层已经克服了这个问题。 由于与沉积电镀方法相关的优越的台阶覆盖，因此可以进行极细修剪，而不会在缝合极被修剪时引入应力。

    Method to make abutted junction GMR head without lead shunting
    46.
    发明授权
    Method to make abutted junction GMR head without lead shunting 失效
    在没有引线分流的情况下制造对接接头GMR头的方法

    公开(公告)号：US07196876B2

    公开(公告)日：2007-03-27

    申请号：US10236359

    申请日：2002-09-06

    申请人： Cherng-Chyi Han ,  Mao-Min Chen ,  Pokang Wang

    发明人： Cherng-Chyi Han ,  Mao-Min Chen ,  Pokang Wang

    IPC分类号： G11B5/39 ,  G11B5/33 ,  G11B5/127

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3116 ,  G11B5/313 ,  G11B5/3163 ,  G11B5/3903 ,  Y10T29/49044 ,  Y10T29/49052

    摘要： A method for forming an abutted junction GMR bottom spin valve sensor in which the free layer has a maximum effective length due to the elimination or minimization of bias layer and conducting lead layer overspreading onto the sensor element and the consequent reduction of current shunting. The overspreading is eliminated by forming a thin dielectric layer on the upper surface of the sensor element. When the biasing and conducting leads are formed on the abutted junction, they overspread onto this layer and the overspread can be removed by an ion-milling process during which the dielectric layer protects the sensor.

    摘要翻译： 用于形成邻接结GMR底部自旋阀传感器的方法，其中自由层由于偏置层的消除或最小化而导致最大有效长度，并且导致引线层过度传播到传感器元件上，从而减少了电流分流。 通过在传感器元件的上表面上形成薄的电介质层来消除超扩展。 当偏置和导电引线形成在邻接接头上时，它们被扩展到该层上，并且可以通过离子铣削工艺去除超扩展，其中电介质层保护传感器。