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132 条记录 (耗时 0.028 秒)

    Junction stability and yield for spin valve heads
    3.
    发明授权
    Junction stability and yield for spin valve heads 失效
    自旋阀头的结点稳定性和产量

    公开(公告)号：US06879474B2

    公开(公告)日：2005-04-12

    申请号：US10718878

    申请日：2003-11-21

    申请人： Chen-Jung Chien ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han ,  Moris Dovek ,  Po-Kang Wang ,  Mao-Min Chen

    发明人： Chen-Jung Chien ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han ,  Moris Dovek ,  Po-Kang Wang ,  Mao-Min Chen

    IPC分类号： G01R33/09 ,  G11B5/31 ,  G11B5/39 ,  H01L43/08 ,  H01L43/12

    CPC分类号： B82Y10/00 ,  G11B5/313 ,  G11B5/3903 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49052

    摘要： The possibility of shorting between a spin valve and its underlying magnetic shield layer can be largely eliminated by choosing the bottom spin valve structure. However, doing so causes the hard longitudinal bias that is standard for all such devices to degrade. The present invention overcomes this problem by inserting a thin NiCr, Ni, Fe, or Cr layer between the antiferromagnetic layer and the longitudinal bias layers. This provides a smoother surface for the bias layers to be deposited onto, thereby removing structural distortions to the longitudinal bias layer that would otherwise be present. A process for manufacturing the structure is also described.

    摘要翻译： 通过选择底部自旋阀结构，可以大大消除自旋阀与其下面的磁屏蔽层之间短路的可能性。 然而，这样做会导致所有这些设备的标准硬的纵向偏差降级。 本发明通过在反铁磁层和纵向偏置层之间插入薄的NiCr，Ni，Fe或Cr层来克服这个问题。 这为偏压层沉积提供了更平滑的表面，从而消除了否则将存在的纵向偏置层的结构变形。 还描述了用于制造该结构的方法。

    Exchange bias structure for abutted junction GMR sensor
    6.
    发明授权
    Exchange bias structure for abutted junction GMR sensor 失效
    对接结GMR传感器的交换偏置结构

    公开(公告)号：US07529067B2

    公开(公告)日：2009-05-05

    申请号：US11375323

    申请日：2006-03-14

    申请人： Yun-Fei Li ,  Hui-Chuan Wang ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han ,  Mao-Min Chen

    发明人： Yun-Fei Li ,  Hui-Chuan Wang ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han ,  Mao-Min Chen

    IPC分类号： G11B5/39

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

    摘要： Although it is known that exchange bias can be utilized in abutted junctions for longitudinal stabilization, a relatively large moment is needed to pin down the sensor edges effectively. Due to the inverse dependence of the exchange bias on the magnetic layer thickness, a large exchange bias has been difficult to achieve by the prior art. This problem has been solved by introducing a structure in which the magnetic moment of the bias layer has been approximately doubled by pinning it from both above and below through exchange with antiferromagnetic layers. Additionally, since the antiferromagnetic layer is in direct abutted contact with the free layer, it acts directly to help stabilize the sensor edge, which is an advantage over the traditional magnetostatic pinning that had been used.

    摘要翻译： 虽然已知交换偏压可用于邻接接头用于纵向稳定化，但是需要相对较大的力矩来有效地将传感器边缘压下。 由于交换偏压对磁性层厚度的反向依赖性，现有技术难以实现大的交换偏压。 通过引入通过与反铁磁层交换而将偏压层的磁矩从上下两端钉住而将偏置层的磁矩大致加倍的结构已经解决了这个问题。 另外，由于反铁磁层直接与自由层接触，所以它直接作用以帮助稳定传感器边缘，这是相对于已经使用的传统静磁钉扎的优点。

    Single stripe magnetoresistive (MR) head
    8.
    发明授权
    Single stripe magnetoresistive (MR) head 失效
    单条磁阻（MR）头

    公开(公告)号：US06373667B1

    公开(公告)日：2002-04-16

    申请号：US09637208

    申请日：2000-08-14

    申请人： Cherng-Chyi Han ,  Mao-Min Chen ,  Cheng Tzong Horng ,  Po-Kang Wang ,  Chyu Jiuh Torng ,  Kochan Ju ,  Yimin Guo

    发明人： Cherng-Chyi Han ,  Mao-Min Chen ,  Cheng Tzong Horng ,  Po-Kang Wang ,  Chyu Jiuh Torng ,  Kochan Ju ,  Yimin Guo

    IPC分类号： G11B5127

    CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3932 ,  Y10T29/49048

    摘要： A method for fabricating a soft adjacent layer (SAL) magnetoresistive (MR) sensor element and several soft adjacent layer (SAL) magnetoresistive (MR) sensor elements which may be fabricated employing the method. There is first provided a substrate. There is formed over the substrate a dielectric layer, where the dielectric layer has a first surface of the dielectric layer and a second surface of the dielectric layer opposite the first surface of the dielectric layer. There is also formed over the substrate a magnetoresistive (MR) layer contacting the first surface of the dielectric layer. There is also formed over the substrate a soft adjacent layer (SAL), where the soft adjacent layer (SAL) has a first surface of the soft adjacent layer (SAL) and a second surface of the soft adjacent layer (SAL). The first surface of the soft adjacent layer (SAL) contacts the second surface of the dielectric layer. Finally, there is also formed over the substrate a transverse magnetic biasing layer, where the transverse magnetic biasing layer contacts the second surface of the soft adjacent layer (SAL), and where at least one of the dielectric layer, the magnetoresistive (MR) layer, the soft adjacent layer (SAL) and the transverse magnetic biasing layer is a patterned layer formed employing an etch mask which serves as a lift-off stencil for forming a patterned second dielectric layer adjoining an edge of the patterned layer. The invention also contemplates a soft adjacent layer (SAL) magnetoresistive (MR) sensor element formed with the magnetoresistive (MR) layer interposed between the substrate and the soft adjacent layer (SAL). Similarly, the invention also contemplates a soft adjacent layer (SAL) magnetoresistive (MR) sensor element employing a transverse magnetic biasing layer formed of a hard bias permanent magnet material.

    摘要翻译： 一种用于制造软相邻层（SAL）磁阻（MR）传感器元件和若干软相邻层（SAL）磁阻（MR））传感器元件的方法，其可以使用该方法制造。 首先提供基板。 在衬底上形成介电层，其中电介质层具有电介质层的第一表面和电介质层与电介质层的第一表面相对的第二表面。 还在衬底上形成与电介质层的第一表面接触的磁阻（MR）层。 还在衬底上形成软相邻层（SAL），其中软相邻层（SAL）具有软相邻层（SAL）的第一表面和软相邻层（SAL）的第二表面。 软相邻层（SAL）的第一表面接触电介质层的第二表面。 最后，还在衬底上形成横向磁偏置层，横向磁偏置层接触软相邻层（SAL）的第二表面，并且其中介电层，磁阻（MR）层中的至少一个 ，软相邻层（SAL）和横向磁偏置层是使用蚀刻掩模形成的图案层，其用作用于形成与图案化层的边缘相邻的图案化的第二介电层的剥离模板。 本发明还考虑了由介于基板和软相邻层（SAL）之间的磁阻（MR）层形成的软相邻层（SAL）磁阻（MR）传感器元件。 类似地，本发明还考虑使用由硬偏磁永磁材料形成的横向磁偏置层的软相邻层（SAL）磁阻（MR）传感器元件。