公开(公告)号：US20050174828A1

公开(公告)日：2005-08-11

申请号：US10776061

申请日：2004-02-11

申请人： Manish Sharma

发明人： Manish Sharma

IPC分类号： G11C11/08 ,  G11C11/14 ,  G11C11/15

CPC分类号： G11C11/15

摘要： A magnetic random access memory (MRAM) that includes an array of magnetic memory cells and a plurality of word and bit lines connecting columns and rows of the memory cells so that the memory cells are positioned at cross-points of the word and bit lines. Each memory cell has a magnetic reference layer and a magnetic data layer. Each magnetic reference layer and each magnetic data layer has a magnetization that is switchable between two states under the influence of a magnetic field and each reference layer has at a first temperature a coercivity that is lower than that of each data layer at the first temperature. The MRAM also includes a plurality of heating elements each proximate to a respective data layer. Each heating element provides in use for localized heating of the respective data layer to reduce the coercivity of the data layer so as to facilitate switching of the data layer.

摘要翻译： 磁性随机存取存储器（MRAM），其包括磁存储器单元阵列和连接存储器单元的列和行的多个字和位线，使得存储器单元位于字和位线的交叉点处。 每个存储单元具有磁性参考层和磁性数据层。 每个磁参考层和每个磁数据层具有在磁场影响下在两个状态之间切换的磁化，并且每个参考层在第一温度下具有低于第一温度下每个数据层的矫顽力的矫顽力。 MRAM还包括各自靠近相应数据层的多个加热元件。 每个加热元件用于各个数据层的局部加热，以降低数据层的矫顽力，从而便于切换数据层。

公开(公告)号：US20050148196A1

公开(公告)日：2005-07-07

申请号：US10746170

申请日：2003-12-26

申请人： Manish Sharma ,  Thomas Anthony ,  Hoon Lee

发明人： Manish Sharma ,  Thomas Anthony ,  Hoon Lee

IPC分类号： H01L21/302 ,  H01L21/461 ,  H01L43/12

CPC分类号： H01L43/12

摘要： An aspect of the present invention is a method of patterning material in a thin-film device. The method includes forming a liftoff stencil, depositing a first layer of material through the liftoff stencil, depositing a second layer of material through the liftoff stencil, removing at least a portion of the liftoff stencil and performing a directional etch on the first and second layer of material.

摘要翻译： 本发明的一个方面是在薄膜器件中图案化材料的方法。 该方法包括形成剥离模板，将第一层材料沉积通过剥离模板，通过剥离模板沉积第二材料层，去除剥离模板的至少一部分并在第一层和第二层上执行定向蚀刻 的材料。

公开(公告)号：US20050146428A1

公开(公告)日：2005-07-07

申请号：US11069641

申请日：2005-02-28

申请人： Brian Mahoney ,  Steven Colvin ,  Manish Sharma

发明人： Brian Mahoney ,  Steven Colvin ,  Manish Sharma

IPC分类号： G06Q10/08 ,  G08B19/00

CPC分类号： G06Q10/08 ,  G08G1/20

摘要： A method of providing information from a plurality of fleet machines located at a plurality of locations for purposes of permitting a manager of fleet equipment to make management decisions pertaining to a fleet comprised of such equipment, monitoring functional operational data from individual machines in a fleet of machines, conveying the monitored data to a remote server, converting the monitored data into a first group pertaining to current existing operational data, and into a second group comprised of past historical data, and transmitting by wirelss means to a person having responsibility for the fleet information at least one of the groups of data.

摘要翻译： 为了允许车队设备的管理者做出与由这样的设备组成的车队有关的管理决定，从位于多个位置的多个车队机器提供信息的方法，监视来自各机组中的各个机器的功能操作数据 将监视的数据传送到远程服务器，将监视的数据转换为与当前现有操作数据相关的第一组，并将其转换成由过去的历史数据组成的第二组，并通过线缆装置传送给负责车队的人 信息数据组中的至少一个。

公开(公告)号：US06897158B2

公开(公告)日：2005-05-24

申请号：US10668148

申请日：2003-09-22

申请人： Manish Sharma

发明人： Manish Sharma

IPC分类号： G02F1/1337 ,  H01L21/302 ,  H10L21/461

CPC分类号： G02F1/13378 ,  B81B2203/0361 ,  B81C1/00626 ,  B81C99/009

摘要： This invention provides a directional ion etching process for making nano-scaled angled features such as may be used, for example, in liquid crystal displays and or nanoimprinting templates. In a particular embodiment a semiconductor wafer substrate is prepared with at least one layer of material. A photoresist is applied, masked, exposed and developed. Anisotropic ion etching at a high angle relative to the wafer is performed to remove portions of the non protected material layer. The remaining photoresist caps shadow at least a portion of the material layer, and as the ion etching is performed at an angle, the protected portions of the material layer also appear at an angle.

公开(公告)号：US20050083728A1

公开(公告)日：2005-04-21

申请号：US10690372

申请日：2003-10-21

申请人： Manish Sharma

发明人： Manish Sharma

IPC分类号： G06F3/041 ,  G06F3/03 ,  G06F3/033 ,  G06F3/046 ,  G11C11/00 ,  G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  H01L43/08

CPC分类号： G06F3/046 ,  G11C11/16

摘要： This invention provides a soft-reference magnetic memory digitizing device. In a particular embodiment the digitizing device includes an array of soft-reference magnetic memory cells. Each memory cell has at least one ferromagnetic sense layer characterized by an alterable orientation of magnetization, the orientation changing upon the substantially proximate application of at east one externally-applied magnetic field as may be provided by a magnetically tipped stylus. Each memory cell also provides at least one ferromagnetic soft-reference layer having a non-pinned orientation of magnetization. An intermediate layer forming a magnetic tunnel junction is placed between the sense layer and soft-reference layer. The orientation of the sense layer is not substantially affected by the soft-reference layer. A related method of use involving a magnetic stylus is also provided.

摘要翻译： 本发明提供一种软参考磁存储数字化装置。 在特定实施例中，数字化装置包括软参考磁存储单元的阵列。 每个存储器单元具有至少一个铁磁感应层，其特征在于磁化方向的可变方向，该方向在基本上接近施加在东侧一个外部施加的磁场上可能由磁性尖头的触笔提供。 每个存储单元还提供至少一个铁磁软参考层，其具有非固定取向的磁化。 形成磁性隧道结的中间层被放置在感测层和软参考层之间。 感测层的取向基本上不受软参考层的影响。 还提供了涉及磁性笔的相关使用方法。

公开(公告)号：US06803274B2

公开(公告)日：2004-10-12

申请号：US10233109

申请日：2002-08-30

申请人： Manish Sharma ,  Lung Tran

发明人： Manish Sharma ,  Lung Tran

IPC分类号： H01L21336

CPC分类号： H01L27/222 ,  H01L43/12

摘要： An exemplary nonvolatile memory array comprises a substrate and a plurality of memory cells formed on the substrate, each of the memory cells being addressable via at least first and second conductors during operations. An exemplary memory cell in the exemplary memory array includes a ferromagnetic annular data layer having an opening, the opening enabling the second conductor to electrically contact the first conductor, an intermediate layer on at least a portion of the annular data layer, and a soft reference layer on at least a portion of the intermediate layer.

摘要翻译： 示例性非易失性存储器阵列包括衬底和形成在衬底上的多个存储器单元，每个存储器单元可在操作期间通过至少第一和第二导体寻址。 示例性存储器阵列中的示例性存储器单元包括具有开口的铁磁环形数据层，该开口使得第二导体能够电接触第一导体，环形数据层的至少一部分上的中间层和软参考 层在中间层的至少一部分上。

公开(公告)号：US06795281B2

公开(公告)日：2004-09-21

申请号：US09963933

申请日：2001-09-25

申请人： Lung Tran ,  Manish Sharma ,  Manoj Bhattacharyya

发明人： Lung Tran ,  Manish Sharma ,  Manoj Bhattacharyya

IPC分类号： H01L2984

CPC分类号： B82Y25/00 ,  G11C11/16 ,  H01F10/3277

摘要： A memory device includes a data layer having a magnetization that can be oriented in first and second directions; and a synthetic ferrimagnet reference layer. The data and reference layers have different coercivities.

摘要翻译： 存储器件包括具有可以在第一和第二方向上定向的磁化的数据层; 和合成亚铁磁参考层。 数据和参考层具有不同的矫顽力。

公开(公告)号：US06470120B2

公开(公告)日：2002-10-22

申请号：US09736789

申请日：2000-12-13

申请人： Evan D. H. Green ,  Manish Sharma

发明人： Evan D. H. Green ,  Manish Sharma

IPC分类号： G02B626

CPC分类号： G02B6/3843 ,  G02B6/4204 ,  G02B6/422 ,  G02B6/4225 ,  G02B6/4226 ,  G02B6/4227

摘要： Apparatus and associated method for aligning optical components including lenses, filters, lasers, fiber optics, etc. The apparatus aligns a first optic element and a second optic element and includes a frame and a sleeve. The frame defines a frame bore along a longitudinal axis thereof. The sleeve defines an eccentric bore configured to contain the first optic element or the second optic element. The sleeve is rotatably coupled in the frame bore to align the first optic element with the second optic element in a plane intersected by the longitudinal axis.

摘要翻译： 用于对准包括透镜，滤光器，激光器，光纤等的光学部件的装置和相关方法。该装置对准第一光学元件和第二光学元件，并且包括框架和套筒。 框架沿其纵向轴线限定框架孔。 套筒限定了配置成容纳第一光学元件或第二光学元件的偏心孔。 套筒可旋转地联接在框架孔中，以将第一光学元件与第二光学元件对准在与纵向轴线相交的平面中。

公开(公告)号：US06404674B1

公开(公告)日：2002-06-11

申请号：US09825461

申请日：2001-04-02

申请人： Thomas C. Anthony ,  Manish Sharma

发明人： Thomas C. Anthony ,  Manish Sharma

IPC分类号： G11C1115

CPC分类号： G11C11/16 ,  B82Y10/00 ,  H01L27/222

摘要： A magnetic memory cell having read-write conductor that is wholly clad with a high magnetic permeability soft magnetic material for a pinned-on-the-fly soft ferromagnetic reference layer is disclosed. The magnetic memory cell includes a ferromagnetic data layer, an intermediate layer formed on the ferromagnetic data layer, and a soft ferromagnetic reference layer having a non-pinned orientation of magnetization formed on the intermediate layer. The soft ferromagnetic reference layer includes a read-write conductor and a ferromagnetic cladding that completely surrounds the read-write conductor to form a cladded read-write conductor. During a read operation, a read current flowing through the read-write conductor generates a read magnetic field that does not saturate the ferromagnetic cladding. During a write operation, a write current flowing through the read-write conductor generates a write magnetic field that saturates the ferromagnetic cladding and extends to the ferromagnetic data layer.

摘要翻译： 公开了一种具有读写导体的磁存储单元，该导体全部用高导磁率的软磁材料包覆在一个固定的软铁磁参考层上。 磁存储单元包括铁磁数据层，形成在铁磁数据层上的中间层和在中间层上形成的具有非磁化取向的磁化铁磁参考层。 软铁磁参考层包括完全包围读写导体以形成包层读写导体的读写导体和铁磁包层。 在读操作期间，流经读写导体的读电流产生不使铁磁包层饱和的读磁场。 在写入操作期间，流过读写导体的写入电流产生使铁磁包层饱和并延伸到铁磁数据层的写入磁场。

公开(公告)号：US5432602A

公开(公告)日：1995-07-11

申请号：US211717

申请日：1994-04-25

申请人： Manish Sharma ,  Hiroyuki Ibe

发明人： Manish Sharma ,  Hiroyuki Ibe

IPC分类号： G01J3/12 ,  G01J9/00 ,  G01J3/28

CPC分类号： G01J9/00 ,  G01J2003/1265

摘要： A small-sized, inexpensive light wavelength measuring apparatus which has no mechanical movable sections but which is capable of high-speed measurement and high measurement precision to improve in reliability. In the light wavelength measuring apparatus, the intensity of incoming light is modulated by a light modulator in response to a reference signal supplied from a signal source and the modulation light is provided with a delay corresponding to the wavelength thereof through a group delay dispersion medium. The light is then converted into an electrical signal by a photoelectric converter, and a phase difference between the electrical signal and reference signal is obtained by a phase comparator, thereby measuring the wavelength of the incoming light.

摘要翻译： PCT No.PCT / JP93 / 01187 Sec。 371日期1994年04月25日 102（e）日期1994年4月25日PCT提交1993年8月25日PCT公布。 出版物WO94 / 04894 日期：1994年3月3日。一种小型，便宜的光波长测量装置，其不具有机械可移动部分，但能够进行高速测量和高测量精度，以提高可靠性。 在光波长测量装置中，响应于从信号源提供的参考信号，由光调制器调制入射光的强度，并且通过组延迟分散介质向调制光提供与其波长相对应的延迟。 然后通过光电转换器将光转换成电信号，并且通过相位比较器获得电信号和参考信号之间的相位差，从而测量入射光的波长。