公开(公告)号：US20210119095A1

公开(公告)日：2021-04-22

申请号：US17132546

申请日：2020-12-23

Applicant: Micron Technology, Inc.

Inventor： Vladimir Odnoblyudov ,  Martin F. Schubert

IPC: H01L33/62 ,  H01L25/075 ,  H01L27/04 ,  H01L27/15 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/64 ,  H01L21/78

Abstract: Solid-state transducers (“SSTs”) and vertical high voltage SSTs having buried contacts are disclosed herein. An SST die in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the transducer structure, and a second semiconductor material at a second side of the transducer structure. The SST can further include a plurality of first contacts at the first side and electrically coupled to the first semiconductor material, and a plurality of second contacts extending from the first side to the second semiconductor material and electrically coupled to the second semiconductor material. An interconnect can be formed between at least one first contact and one second contact. The interconnects can be covered with a plurality of package materials.

公开(公告)号：US20210091264A1

公开(公告)日：2021-03-25

申请号：US17099276

申请日：2020-11-16

Applicant: Micron Technology, Inc.

Inventor： Vladimir Odnoblyudov ,  Martin F. Schubert

IPC: H01L33/20 ,  H01L33/08 ,  H01L21/02 ,  H01L33/38 ,  H01L33/00 ,  H01L33/12 ,  H01L33/48 ,  H01L33/62

Abstract: Various embodiments of SST dies and solid state lighting (“SSL”) devices with SST dies, assemblies, and methods of manufacturing are described herein. In one embodiment, a SST die includes a substrate material, a first semiconductor material and a second semiconductor material on the substrate material, an active region between the first semiconductor material and the second semiconductor material, and a support structure defined by the substrate material. In some embodiments, the support structure has an opening that is vertically aligned with the active region.

公开(公告)号：US10937776B2

公开(公告)日：2021-03-02

申请号：US16422413

申请日：2019-05-24

Applicant: Micron Technology, Inc.

Inventor： Martin F. Schubert ,  Vladimir Odnoblyudov

IPC: H01L29/161 ,  H01L25/16 ,  H05B45/58 ,  H05B47/105 ,  H01L27/02 ,  H01L33/06 ,  H01L33/32 ,  H01L33/62 ,  H01L33/00

Abstract: Solid state transducers with state detection, and associated systems and methods are disclosed. A solid state transducer system may include a support substrate that carries a solid state emitter and a state device. The solid state emitter and the state device may be stacked along a common axis. Further, the state device may be positioned to detect a state of the solid state emitter and/or an electrical path of which the solid state emitter forms a part. The solid state emitter may include a first semiconductor component, a second semiconductor component, and an active region between the first and second semiconductor components. The state device may include a state-sensing component having a composition different than that of the active region and the first and second semiconductor components. In some embodiments, the state-sensing component may include an electrostatic discharge protection device, a thermal sensor, a photosensor, or a combination thereof.

公开(公告)号：US10777721B2

公开(公告)日：2020-09-15

申请号：US16455522

申请日：2019-06-27

Applicant: Micron Technology, Inc.

Inventor： Martin F. Schubert

IPC: H01L33/62 ,  H01L33/32 ,  H01L33/38 ,  H01L27/15 ,  H01L31/02 ,  H01L31/0304 ,  H01L33/00

Abstract: High-voltage solid-state transducer (SST) devices and associated systems and methods are disclosed herein. An SST device in accordance with a particular embodiment of the present technology includes a carrier substrate, a first terminal, a second terminal and a plurality of SST dies connected in series between the first and second terminals. The individual SST dies can include a transducer structure having a p-n junction, a first contact and a second contact. The transducer structure forms a boundary between a first region and a second region with the carrier substrate being in the first region. The first and second terminals can be configured to receive an output voltage and each SST die can have a forward junction voltage less than the output voltage.

公开(公告)号：US20200066956A1

公开(公告)日：2020-02-27

申请号：US16669785

申请日：2019-10-31

Applicant: Micron Technology, Inc.

Inventor： Vladimir Odnoblyudov ,  Martin F. Schubert

IPC: H01L33/62 ,  H01L21/78 ,  H01L27/15 ,  H01L33/38 ,  H01L27/04 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01L33/40 ,  H01L33/64 ,  H01L25/075

Abstract: Solid-state transducers (“SSTs”) and vertical high voltage SSTs having buried contacts are disclosed herein. An SST die in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the transducer structure, and a second semiconductor material at a second side of the transducer structure. The SST can further include a plurality of first contacts at the first side and electrically coupled to the first semiconductor material, and a plurality of second contacts extending from the first side to the second semiconductor material and electrically coupled to the second semiconductor material. An interconnect can be formed between at least one first contact and one second contact. The interconnects can be covered with a plurality of package materials.

公开(公告)号：US20190326494A1

公开(公告)日：2019-10-24

申请号：US16455522

申请日：2019-06-27

Applicant: Micron Technology, Inc.

Inventor： Martin F. Schubert

IPC: H01L33/62 ,  H01L33/32 ,  H01L33/00 ,  H01L33/38 ,  H01L31/02 ,  H01L27/15 ,  H01L31/0304

Abstract: High-voltage solid-state transducer (SST) devices and associated systems and methods are disclosed herein. An SST device in accordance with a particular embodiment of the present technology includes a carrier substrate, a first terminal, a second terminal and a plurality of SST dies connected in series between the first and second terminals. The individual SST dies can include a transducer structure having a p-n junction, a first contact and a second contact. The transducer structure forms a boundary between a first region and a second region with the carrier substrate being in the first region. The first and second terminals can be configured to receive an output voltage and each SST die can have a forward junction voltage less than the output voltage.

公开(公告)号：US20190319179A1

公开(公告)日：2019-10-17

申请号：US16447487

申请日：2019-06-20

Applicant: Micron Technology, Inc.

Inventor： Vladimir Odnoblyudov ,  Martin F. Schubert

IPC: H01L33/62 ,  H01L33/50 ,  H01L33/08 ,  H01L33/58 ,  H01L33/32 ,  H01L33/06 ,  H01L33/00

Abstract: Vertical solid-state transducers (“SSTs”) having backside contacts are disclosed herein. An SST in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the SST, a second semiconductor material at a second side of the SST opposite the first side, and an active region between the first and second semiconductor materials. The SST can further include first and second contacts electrically coupled to the first and second semiconductor materials, respectively. A portion of the first contact can be covered by a dielectric material, and a portion can remain exposed through the dielectric material. A conductive carrier substrate can be disposed on the dielectric material. An isolating via can extend through the conductive carrier substrate to the dielectric material and surround the exposed portion of the first contact to define first and second terminals electrically accessible from the first side.

公开(公告)号：US20190287954A1

公开(公告)日：2019-09-19

申请号：US16422413

申请日：2019-05-24

Applicant: Micron Technology, Inc.

Inventor： Martin F. Schubert ,  Vladimir Odnoblyudov

IPC: H01L25/16 ,  H01L33/62 ,  H01L27/02 ,  H01L33/06 ,  H01L33/32 ,  H05B37/02 ,  H05B33/08

Abstract: Solid state transducers with state detection, and associated systems and methods are disclosed. A solid state transducer system may include a support substrate that carries a solid state emitter and a state device. The solid state emitter and the state device may be stacked along a common axis. Further, the state device may be positioned to detect a state of the solid state emitter and/or an electrical path of which the solid state emitter forms a part. The solid state emitter may include a first semiconductor component, a second semiconductor component, and an active region between the first and second semiconductor components. The state device may include a state-sensing component having a composition different than that of the active region and the first and second semiconductor components. In some embodiments, the state-sensing component may include an electrostatic discharge protection device, a thermal sensor, a photosensor, or a combination thereof.

公开(公告)号：US10347614B2

公开(公告)日：2019-07-09

申请号：US15342495

申请日：2016-11-03

Applicant: Micron Technology, Inc.

Inventor： Martin F. Schubert ,  Vladimir Odnoblyudov

IPC: H01L31/12 ,  H01L25/16 ,  H05B33/08 ,  H01L27/02 ,  H01L33/06 ,  H01L33/32 ,  H01L33/62 ,  H05B37/02 ,  H01L33/00

Abstract: Solid state transducers with state detection, and associated systems and methods are disclosed. A solid state transducer system in accordance with a particular embodiment includes a support substrate and a solid state emitter carried by the support substrate. The solid state emitter can include a first semiconductor component, a second semiconductor component, and an active region between the first and second semiconductor components. The system can further include a state device carried by the support substrate and positioned to detect a state of the solid state emitter and/or an electrical path of which the solid state emitter forms a part. The state device can be formed from at least one state-sensing component having a composition different than that of the first semiconductor component, the second semiconductor component, and the active region. The state device and the solid state emitter can be stacked along a common axis. In further particular embodiments, the state-sensing component can include an electrostatic discharge protection device, a thermal sensor, or a photosensor.

公开(公告)号：US10333039B2

公开(公告)日：2019-06-25

申请号：US15426897

申请日：2017-02-07

Applicant: Micron Technology, Inc.

Inventor： Vladimir Odnoblyudov ,  Martin F. Schubert

IPC: H01L21/66 ,  G01R31/26 ,  H01L33/62 ,  H01L33/00 ,  H01L33/06 ,  H01L33/08 ,  H01L33/32 ,  H01L33/50 ,  H01L33/58 ,  H01L33/38 ,  H01L33/44 ,  H01L33/64

Abstract: Vertical solid-state transducers (“SSTs”) having backside contacts are disclosed herein. An SST in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the SST, a second semiconductor material at a second side of the SST opposite the first side, and an active region between the first and second semiconductor materials. The SST can further include first and second contacts electrically coupled to the first and second semiconductor materials, respectively. A portion of the first contact can be covered by a dielectric material, and a portion can remain exposed through the dielectric material. A conductive carrier substrate can be disposed on the dielectric material. An isolating via can extend through the conductive carrier substrate to the dielectric material and surround the exposed portion of the first contact to define first and second terminals electrically accessible from the first side.