公开(公告)号：US20080165406A1

公开(公告)日：2008-07-10

申请号：US11885785

申请日：2006-03-09

申请人： Ehud Galun ,  Nisim Hadar ,  Alon Tavory ,  Israel Vilenchik ,  Ephraim Argaman ,  Gidon Slosberg ,  Moshe Toker ,  Yosef Kigel ,  Guy Ben-Zvi ,  Rami Cohen ,  Vladimir Dmitriev ,  Sergey Oshemkov

发明人： Ehud Galun ,  Nisim Hadar ,  Alon Tavory ,  Israel Vilenchik ,  Ephraim Argaman ,  Gidon Slosberg ,  Moshe Toker ,  Yosef Kigel ,  Guy Ben-Zvi ,  Rami Cohen ,  Vladimir Dmitriev ,  Sergey Oshemkov

IPC分类号： G02F1/00 ,  G02B27/02

CPC分类号： G02B27/32

摘要： A reticle device is disclosed, comprising a transparent substrate provided with subsurface reticle design inscribed within the substrate.

摘要翻译： 公开了一种掩模版设备，其包括设置有内接在衬底内的地下掩模版设计的透明衬底。

公开(公告)号：US20060280668A1

公开(公告)日：2006-12-14

申请号：US11483455

申请日：2006-07-10

申请人： Vladimir Dmitriev ,  Yuri Melnik

发明人： Vladimir Dmitriev ,  Yuri Melnik

IPC分类号： C01B21/072

CPC分类号： C30B25/00 ,  C30B25/02 ,  C30B29/403 ,  Y10S117/915

摘要： A method and apparatus for growing low defect, optically transparent, colorless, crack-free, substantially flat, single crystal Group III nitride epitaxial layers with a thickness of at least 10 microns is provided. These layers can be grown on large area substrates comprised of Si, SiC, sapphire, GaN, AlN, GaAs, AlGaN and others. In one aspect, the crack-free Group III nitride layers are grown using a modified HVPE technique. If desired, the shape and the stress of Group III nitride layers can be controlled, thus allowing concave, convex and flat layers to be controllably grown. After the growth of the Group III nitride layer is complete, the substrate can be removed and the freestanding Group III nitride layer used as a seed for the growth of a boule of Group III nitride material. The boule can be sliced into individual wafers for use in the fabrication of a variety of semiconductor structures (e.g., HEMTs, LEDs, etc.).

摘要翻译： 提供了一种用于生长厚度至少为10微米的低缺陷，光学透明，无色，无裂纹，基本平坦的单晶III族氮化物外延层的方法和装置。 这些层可以在由Si，SiC，蓝宝石，GaN，AlN，GaAs，AlGaN等构成的大面积基板上生长。 在一个方面，使用改进的HVPE技术生长无裂纹的III族氮化物层。 如果需要，可以控制III族氮化物层的形状和应力，从而允许可控地生长凹面，凸面和平面层。 在III族氮化物层的生长完成之后，可以去除衬底，并且将独立的III族氮化物层用作用于生长III族氮化物材料的晶粒的种子。 可以将该小片切成单独的晶片，以用于制造各种半导体结构（例如，HEMT，LED等）。

公开(公告)号：US20060086165A1

公开(公告)日：2006-04-27

申请号：US10967978

申请日：2004-10-19

申请人： Sergey Golovashchenko ,  Vladimir Dmitriev ,  Patrick Canfield ,  Albert Krause ,  Clay Maranville

发明人： Sergey Golovashchenko ,  Vladimir Dmitriev ,  Patrick Canfield ,  Albert Krause ,  Clay Maranville

IPC分类号： B21D26/02

CPC分类号： B21D26/14

摘要： There is disclosed herein an apparatus for electromagnetic forming of a workpiece with enhancements that increase the durability and overall efficiency of the solenoid coil. The apparatus includes reinforcement members dispersed through the solenoid coil and a cooling system. The apparatus also includes a a shaper that varies in girth effectively acting as a force concentrator. The electromagnetic forming device is also capable of incrementally heat treating the workpiece and reducing residual stresses in the workpiece. The invention further discloses a more efficient way of manufacturing the solenoid coil.

摘要翻译： 这里公开了一种用于电磁成形工件的装置，其具有提高螺线管线圈的耐久性和总体效率的增强。 该装置包括通过螺线管线圈分散的加强构件和冷却系统。 该装置还包括一个成形器，该成形器可以有效地作为力集中器而变化。 电磁成形装置还能够对工件进行增量热处理并减少工件中的残余应力。 本发明还公开了一种更有效的制造螺线管线圈的方法。

公开(公告)号：US20050244997A1

公开(公告)日：2005-11-03

申请号：US11114414

申请日：2005-04-26

申请人： Yuri Melnik ,  Vitali Soukhoveev ,  Vladimir Ivantsov ,  Katie Tsvetkov ,  Vladimir Dmitriev

发明人： Yuri Melnik ,  Vitali Soukhoveev ,  Vladimir Ivantsov ,  Katie Tsvetkov ,  Vladimir Dmitriev

IPC分类号： C30B25/00 ,  H01L21/00

CPC分类号： C30B29/406 ,  C30B25/18 ,  C30B29/403

摘要： Bulk GaN and AlGaN single crystal boules, preferably fabricated using a modified HVPE process, are provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth, for example to achieve n-, i-, or p-type conductivity.

摘要翻译： 提供了优选使用改进的HVPE工艺制造的块状GaN和AlGaN单晶晶粒。 单晶晶粒通常具有超过4立方厘米的体积，最小尺寸约为1厘米。 如果需要，本体材料可以在生长期间掺杂，例如以实现n，i-或p型导电性。

公开(公告)号：US06929886B2

公开(公告)日：2005-08-16

申请号：US09950038

申请日：2001-09-10

申请人： Eitan Zait ,  Vladimir Dmitriev ,  Nikolay Guletsky ,  Sergei Oshemkov

发明人： Eitan Zait ,  Vladimir Dmitriev ,  Nikolay Guletsky ,  Sergei Oshemkov

IPC分类号： B23K26/06 ,  B23K26/067 ,  B23K26/18 ,  G03F1/76 ,  G03F7/20

CPC分类号： G03F1/76 ,  B23K26/009 ,  B23K26/0624 ,  B23K26/067 ,  B23K26/0676 ,  B23K26/18 ,  Y10S430/146

摘要： A method and apparatus for manufacturing patterns on a reticle blank comprising a substrate made from material transparent to UV irradiation and having a first surface and a second opposite surface, the first surface coated with a chrome layer. The method comprises providing ultra-short pulsed laser beams, focusing means, relative displacement facilitator for facilitating relative displacement of the reticle blank relative to said at least one of a plurality of target locations, and a controller for controlling the synchronization and operation of the laser beam source, the focusing means and the relative displacement facilitator. Ultra-short pulsed laser beam is irradiated in a predetermined pattern directed at the second surface and passing through the substrate, focused on the chrome layer or on its proximity.

摘要翻译： 一种用于在掩模版坯料上制造图案的方法和装置，包括由对UV照射透明的材料制成的基底，并且具有第一表面和第二相对表面，所述第一表面涂覆有铬层。 该方法包括提供超短脉冲激光束，聚焦装置，相对位移辅助器，用于促进标线片坯体相对于多个目标位置中的所述至少一个的相对位移;以及控制器，用于控制激光器的同步和操作 光束源，聚焦装置和相对位移辅助器。 超短脉冲激光束以指向第二表面的预定图案照射并穿过基板，聚焦在铬层上或其邻近处。

公开(公告)号：US20050056222A1

公开(公告)日：2005-03-17

申请号：US10632736

申请日：2003-08-01

申请人： Yuri Melnik ,  Vitali Soukhoveev ,  Vladimir Ivantsov ,  Katie Tsvetkov ,  Vladimir Dmitriev

发明人： Yuri Melnik ,  Vitali Soukhoveev ,  Vladimir Ivantsov ,  Katie Tsvetkov ,  Vladimir Dmitriev

IPC分类号： C30B25/00 ,  C23C16/00

CPC分类号： C30B25/00 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  Y10T117/10 ,  Y10T117/1016

摘要： An apparatus for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth to achieve n-, i-, or p-type conductivity. In order to have growth cycles of sufficient duration, preferably an extended Ga source is used in which a portion of the Ga source is maintained at a relatively high temperature while most of the Ga source is maintained at a temperature close to, and just above, the melting temperature of Ga. To grow large boules of AlGaN, preferably multiple Al sources are used, the Al sources being sequentially activated to avoid Al source depletion and excessive degradation. In order to achieve high growth rates, preferably a dual growth zone reactor is used in which a first, high temperature zone is used for crystal nucleation and a second, low temperature zone is used for rapid crystal growth. Although the process can be used to grow crystals in which the as-grown material and the seed crystal are of different composition, preferably the two crystalline structures have the same composition, thus yielding improved crystal quality.

摘要翻译： 提供一种用于生长体GaN和AlGaN单晶晶粒的装置，优选使用改进的HVPE工艺。 单晶晶粒通常具有超过4立方厘米的体积，最小尺寸约为1厘米。 如果需要，可以在生长期间掺杂大块材料以实现n，i-或p型导电性。 为了具有足够的持续时间的生长周期，优选使用延伸的Ga源，其中Ga源的一部分保持在相对高的温度，而大部分Ga源保持在接近于刚刚高于 Ga的熔化温度为了生长AlGaN的大块，优选使用多个Al源，Al源被依次激活以避免Al源耗尽和过度降解。 为了实现高生长速率，优选使用双重生长区反应器，其中第一高温区用于晶体成核，第二低温区用于快速晶体生长。 虽然该方法可以用于生长其中生长材料和晶种具有不同组成的晶体，但优选两个晶体结构具有相同的组成，从而产生改善的晶体质量。