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    SYSTEM FOR DIRECT ELECTRICAL CHARGING AND STORAGE OF THERMAL ENERGY FOR POWER PLANTS
    41.
    发明申请
    SYSTEM FOR DIRECT ELECTRICAL CHARGING AND STORAGE OF THERMAL ENERGY FOR POWER PLANTS 审中-公开

    公开(公告)号：US20190153284A1

    公开(公告)日：2019-05-23

    申请号：US16313881

    申请日：2017-07-24

    Applicant: Massachusetts Institute of Technology

    Inventor： Laureen Meroueh ,  Gang Chen

    IPC: C09K5/06 ,  F02C1/05 ,  F02C6/14 ,  F28D20/02

    Abstract: System for storage of electricity in the form of thermal energy, and release of thermal energy during times of demand. The system includes a unit for containing at least one electrically conducting phase change material and electrical circuitry for driving electrical current through the phase change material to heat the phase change material into a molten state, or at least one electrical heater used to convert electricity into heat stored in the phase change material. Structure is provided for transferring heat in the phase change material to a working fluid such as steam or gas for electricity generation in a steam turbine or gas turbine, capable of generating supercritical fluids. Structure is also provided for transferring heat in the phase change material to a thermal energy to electrical energy conversion device. A suitable phase change material is elemental silicon or an aluminum-silicon alloy.

    Localized solar collectors
    43.
    发明授权
    Localized solar collectors 有权

    公开(公告)号：US10234172B2

    公开(公告)日：2019-03-19

    申请号：US15283914

    申请日：2016-10-03

    Applicant: Massachusetts Institute of Technology

    Inventor： George Ni ,  Gang Chen ,  Svetlana V. Boriskina ,  Thomas Alan Cooper

    IPC: B32B5/18 ,  B32B5/32 ,  F22B1/00 ,  C08L83/02 ,  F24S10/17 ,  F24S10/80 ,  F24S20/25 ,  F24S20/50 ,  F24S70/10 ,  F24S80/00 ,  F24S80/56 ,  F24S80/65 ,  F24S90/00

    Abstract: A localized heating structure includes a spectrally-selective solar absorber, that absorbs incident solar radiation and reflects at wavelengths longer than 2 μm, with an underlying heat-spreading layer having a thermal conductivity equal to or greater than 50 W/(mK), a thermally insulating layer, adjacent to the spectrally-selective solar absorber, having a thermal conductivity of less than 0.1 W/(mK), one or more evaporation openings through the spectrally-selective solar absorber and the thermally insulating layer, and an evaporation wick, disposed in one or more of the evaporation openings in the thermally insulating layer, that contacts liquid and allows the liquid to be transported from a location beneath the thermally insulating layer through to the spectrally-selective solar absorber in order to generate vapor from the liquid. The thermally insulating layer is configured to have a density less than the liquid so that the localized heating structure is able to float on the liquid.

    Silica aerogels and their preparation
    44.
    发明授权
    Silica aerogels and their preparation 有权

    公开(公告)号：US09828251B2

    公开(公告)日：2017-11-28

    申请号：US14747996

    申请日：2015-06-23

    Applicant: Massachusetts Institute of Technology

    Inventor： Taofang Zeng ,  Yanjia Zuo ,  Gang Chen

    IPC: C01B33/14 ,  C04B14/06 ,  C01B33/158

    CPC classification number: C01B33/14 ,  C01B33/1585 ,  C01P2006/16 ,  C04B14/064

    Abstract: Silica aerogels with improved properties are disclosed together with methods for synthesizing such aerogels. The improved properties include lower thermal conductivity (better insulating capacity), lower acoustic velocity, lower dielectric constant and improved ductility. Greater tunability of the refractive index can also be achieved. The silica aerogels are prepared by a sol-gel processing method that provides better control of the formation or aerogel structures. Generally speaking, the improvements arise from control of the synthesis to create a morphology of primary clusters and diverse-sized secondary clusters of dense silica aerogels separated by less densely packed regions. By providing a broader range of secondary clusters and/or pore sizes and loose connectivity between clusters, reductions can be achieved in thermal conductivity and flexural modulus.

    Fabrication of Stable Electrode/Diffusion Barrier Layers for Thermoelectric Filled Skutterudite Devices
    46.
    发明申请
    Fabrication of Stable Electrode/Diffusion Barrier Layers for Thermoelectric Filled Skutterudite Devices 审中-公开

    公开(公告)号：US20170288112A1

    公开(公告)日：2017-10-05

    申请号：US15627593

    申请日：2017-06-20

    Applicant: University of Houston System ,  Massachusetts Institute of Technology

    Inventor： Qing Jie ,  Zhifeng Ren ,  Gang Chen

    IPC: H01L35/34 ,  H01L35/20 ,  H01L35/22 ,  H01L35/08

    Abstract: Disclosed are methods for the manufacture of n-type and p-type filled skutterudite thermoelectric legs of an electrical contact. A first material of CoSi2 and a dopant are ball-milled to form a first powder which is thermo-mechanically processed with a second powder of n-type skutterudite to form a n-type skutterudite layer disposed between a first layer and a third layer of the doped-CoSi2. In addition, a plurality of components such as iron, and nickel, and at least one of cobalt or chromium are ball-milled form a first powder that is thermo-mechanically processed with a p-type skutterudite layer to form a p-type skutterudite layer “second layer” disposed between a first and a third layer of the first powder. The specific contact resistance between the first layer and the skutterudite layer for both the n-type and the p-type skutterudites subsequent to hot-pressing is less than about 10.0 μΩ·cm2 .

    Localized Solar Collectors
    47.
    发明申请
    Localized Solar Collectors 审中-公开
    本地化太阳能收集器

    公开(公告)号：US20170038097A1

    公开(公告)日：2017-02-09

    申请号：US15283914

    申请日：2016-10-03

    Applicant: Massachusetts Institute of Technology

    Inventor： George Ni ,  Gang Chen ,  Svetlana V. Boriskina ,  Thomas Alan Cooper

    IPC: F24J2/36 ,  F24J2/50 ,  F24J2/00

    CPC classification number: F24S20/50 ,  B32B5/18 ,  B32B5/32 ,  B32B2266/06 ,  C08L83/02 ,  F22B1/006 ,  F24S10/17 ,  F24S10/80 ,  F24S20/25 ,  F24S70/10 ,  F24S80/525 ,  F24S80/56 ,  F24S80/65 ,  F24S90/00 ,  F24S2080/014 ,  Y02E10/44 ,  Y10T29/49826 ,  Y10T428/249967 ,  Y10T428/249969

    Abstract: A localized heating structure includes a spectrally-selective solar absorber, that absorbs incident solar radiation and reflects at wavelengths longer than 2 μm, with an underlying heat-spreading layer having a thermal conductivity equal to or greater than 50 W/(mK), a thermally insulating layer, adjacent to the spectrally-selective solar absorber, having a thermal conductivity of less than 0.1 W/(mK), one or more evaporation openings through the spectrally-selective solar absorber and the thermally insulating layer, and an evaporation wick, disposed in one or more of the evaporation openings in the thermally insulating layer, that contacts liquid and allows the liquid to be transported from a location beneath the thermally insulating layer through to the spectrally-selective solar absorber in order to generate vapor from the liquid. The thermally insulating layer is configured to have a density less than the liquid so that the localized heating structure is able to float on the liquid.

    Abstract translation: 局部加热结构包括光谱选择性太阳能吸收器，其吸收入射的太阳辐射并以大于2μm的波长反射，具有等于或大于50W /（mK）的热导率的下面的热扩散层， 隔热层，邻近光谱选择性太阳能吸收器，具有小于0.1W /（mK）的热导率，通过光谱选择性太阳能吸收器和隔热层的一个或多个蒸发开口，以及蒸发灯芯， 设置在绝热层中的一个或多个蒸发开口中，其接触液体并允许液体从绝热层下方的位置输送到光谱选择性太阳能吸收器，以便从液体产生蒸气。 隔热层被配置为具有小于液体的密度，使得局部加热结构能够浮在液体上。

    METHODS FOR HIGH FIGURE-OF-MERIT IN NANOSTRUCTURED THERMOELECTRIC MATERIALS
    49.
    发明申请
    METHODS FOR HIGH FIGURE-OF-MERIT IN NANOSTRUCTURED THERMOELECTRIC MATERIALS 审中-公开
    在纳米结构的热电材料中的高图形方法

    公开(公告)号：US20150068574A1

    公开(公告)日：2015-03-12

    申请号：US14517763

    申请日：2014-10-17

    Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGY ,  TRUSTEES OF BOSTON COLLEGE

    Inventor： Zhifeng Ren ,  Bed Poudel ,  Gang Chen ,  Yucheng Lan ,  Dezhi Wang ,  Qing Hao ,  Mildred Dresselhaus ,  Yi Ma ,  Xiao Yan ,  Xiaoyuan Chen ,  Xiaowei Wang ,  Joshi R. Giri ,  Bo Yu

    IPC: H01L35/20 ,  H01L35/18 ,  H01L35/34 ,  H01L35/16

    CPC classification number: H01L35/20 ,  H01L35/16 ,  H01L35/18 ,  H01L35/22 ,  H01L35/34

    Abstract: Thermoelectric materials with high figures of merit, ZT values, are disclosed. In many instances, such materials include nano-sized domains (e.g., nanocrystalline), which are hypothesized to help increase the ZT value of the material (e.g., by increasing phonon scattering due to interfaces at grain boundaries or grain/inclusion boundaries). The ZT value of such materials can be greater than about 1, 1.2, 1.4, 1.5, 1.8, 2 and even higher. Such materials can be manufactured from a thermoelectric starting material by generating nanoparticles therefrom, or mechanically alloyed nanoparticles from elements which can be subsequently consolidated (e.g., via direct current induced hot press) into a new bulk material. Non-limiting examples of starting materials include bismuth, lead, and/or silicon-based materials, which can be alloyed, elemental, and/or doped. Various compositions and methods relating to aspects of nanostructured theromoelectric materials (e.g., modulation doping) are further disclosed.

    Abstract translation: 公开了具有高品质因数的ZT值的热电材料。 在许多情况下，这样的材料包括纳米尺度的结构域（例如，纳米晶体），其被假定为有助于增加材料的ZT值（例如，通过增加由于界面处的晶界或晶粒/夹杂物边界处的声子散射）。 这种材料的ZT值可以大于约1.2,1.4,1.5,1.8,2甚至更高。 这样的材料可以通过从其中产生纳米颗粒的热电原材料制造，或者可以随后固化（例如，通过直流感应热压机）成为新的散装材料的元件的机械合金纳米颗粒。 起始材料的非限制性实例包括可以合金化，元素化和/或掺杂的铋，铅和/或硅基材料。 进一步公开了与纳米结构的高电子材料的方面有关的各种组成和方法（例如，调制掺杂）。

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