FABRICATION OF STABLE ELECTRODE/DIFFUSION BARRIER LAYERS FOR THERMOELECTRIC FILLED SKUTTERUDITE DEVICES
    10.
    发明申请
    FABRICATION OF STABLE ELECTRODE/DIFFUSION BARRIER LAYERS FOR THERMOELECTRIC FILLED SKUTTERUDITE DEVICES 有权
    稳定电极/扩散障碍层的制造用于热电填充的SKUTTERUDITE设备

    公开(公告)号:US20160204326A1

    公开(公告)日:2016-07-14

    申请号:US14873503

    申请日:2015-10-02

    CPC classification number: H01L35/34 H01L35/08 H01L35/14 H01L35/20 H01L35/22

    Abstract: Disclosed are methods for the manufacture of n-type and p-type filled skutterudite thermoelectric legs of an electrical contact. A first material of CoSi2 and a dopant are ball-milled to form a first powder which is thermo-mechanically processed with a second powder of n-type skutterudite to form a n-type skutterudite layer disposed between a first layer and a third layer of the doped-CoSi2. In addition, a plurality of components such as iron, and nickel, and at least one of cobalt or chromium are ball-milled form a first powder that is thermo-mechanically processed with a p-type skutterudite layer to form a p-type skutterudite layer “second layer” disposed between a first and a third layer of the first powder. The specific contact resistance between the first layer and the skutterudite layer for both the n-type and the p-type skutterudites subsequent to hot-pressing is less than about 10.0 μΩ·cm2.

    Abstract translation: 公开了用于制造电触头的n型和p型填充方钴矿热电腿的方法。 将CoSi 2和掺杂剂的第一材料球磨以形成用n型方钴矿的第二粉末热机械加工的第一粉末,以形成设置在第一层和第三层之间的n型方钴矿层 掺杂CoSi2。 此外,将多种组分如铁和镍以及至少一种钴或铬球磨成形成第一粉末,其用p型方钴矿层热机械加工以形成p型方钴矿 层“第二层”设置在第一和第三层之间。 在热压之后的n型和p型方钴矿的第一层和方钴矿层之间的特定接触电阻小于约10.0μΩ·cmgr·cm 2。

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