公开(公告)号：US20210349663A1

公开(公告)日：2021-11-11

申请号：US16871366

申请日：2020-05-11

Applicant: Micron Technology, Inc.

Inventor： Liang Yu ,  John Paul Aglubat ,  Fulvio Rori

IPC: G06F3/06 ,  G06F1/14 ,  G11C7/10

Abstract: A memory management operation is executed on a plurality of memory dies of a memory sub-system. The memory sub-system determines whether a first measured current level corresponding to execution of the memory management operation satisfies a condition pertaining to a threshold peak current level. The memory sub-system determines whether a second measured current level corresponding to execution of the memory management operation satisfies the condition pertaining to the threshold peak current level. Mask data is generated identifying the first measured current level and the second measured current level. A request is received from a host system to execute the memory management operation. The memory sub-system performs, based on the mask data, a peak current management action during execution of the memory management operation.

公开(公告)号：US20240272812A1

公开(公告)日：2024-08-15

申请号：US18621747

申请日：2024-03-29

Applicant: Micron Technology, Inc.

Inventor： Luca Nubile ,  Walter Di Francesco ,  Fumin Gu ,  Ali Mohammadzadeh ,  Biagio Iorio ,  Liang Yu

IPC: G06F3/06

CPC classification number: G06F3/0625 ,  G06F3/0653 ,  G06F3/0659 ,  G06F3/0679

Abstract: A memory device includes a memory array and control logic, operatively coupled with the memory array. The control logic allocates power to one or more prioritized processing threads, of a plurality of processing threads that access the memory array, based on a value of a priority ring counter. The control logic starts a timer in response to detecting allocation of the power to a non-prioritized processing thread of the plurality of processing threads. While the timer is running, the control logic increments the priority ring counter before each power management cycle and prioritizes allocation of the power to the one or more prioritized processing threads located within a subset of the plurality of processing threads corresponding to a value of the priority ring counter.

公开(公告)号：US20240241643A1

公开(公告)日：2024-07-18

申请号：US18407239

申请日：2024-01-08

Applicant: Micron Technology, Inc.

Inventor： Biagio Iorio ,  Luca Nubile ,  Walter Di Francesco ,  Jeremy Binfet ,  Liang Yu ,  Yankang He ,  Ali Mohammadzadeh

IPC: G06F3/06

CPC classification number: G06F3/061 ,  G06F3/0659 ,  G06F3/0679

Abstract: Control logic on a memory die of a multi-die memory sub-system receives, from a memory sub-system controller, a data burst command indicating an upcoming data burst event and determines an expected current utilization in the memory sub-system during the data burst event. The control logic further determines whether the expected current utilization in the memory sub-system during the data burst event satisfies a threshold criterion and responsive to determining that the expected current utilization in the memory sub-system during the data burst event does not satisfy the threshold criterion, pauses one or more operations being executed by the control logic on the memory die until the expected current utilization in the memory sub-system during the data burst event satisfies the threshold criterion. Responsive to determining that the expected current utilization in the memory sub-system during the data burst event satisfies the threshold criterion, the control logic provides, to the memory sub-system controller, an indication that the data burst event is approved and can perform one or more operations corresponding to the data burst event.

公开(公告)号：US11977748B2

公开(公告)日：2024-05-07

申请号：US17668311

申请日：2022-02-09

Applicant: Micron Technology, Inc.

Inventor： Luca Nubile ,  Walter Di Francesco ,  Fumin Gu ,  Ali Mohammadzadeh ,  Biagio Iorio ,  Liang Yu

IPC: G06F3/06

CPC classification number: G06F3/0625 ,  G06F3/0653 ,  G06F3/0659 ,  G06F3/0679

Abstract: A memory device includes memory dice, each memory die including: a memory array; a memory to store a data structure; and control logic that includes: multiple processing threads to execute memory access operations on the memory array concurrently; a priority ring counter, the data structure to store an association between a value of the priority ring counter and a subset of the multiple processing threads; a threads manager to increment the value of the priority ring counter before a power management cycle and to identify one or more prioritized processing threads corresponding to the subset of the multiple processing threads; and a peak power manager coupled with the threads manager and to prioritize allocation of power to the one or more prioritized processing threads during the power management cycle.

公开(公告)号：US11960764B2

公开(公告)日：2024-04-16

申请号：US17464868

申请日：2021-09-02

Applicant: Micron Technology, Inc.

Inventor： Liang Yu ,  Luigi Pilolli ,  Biagio Iorio

IPC: G06F1/04 ,  G06F1/3234 ,  G06F3/06

CPC classification number: G06F3/0659 ,  G06F1/04 ,  G06F3/0604 ,  G06F3/0679 ,  G06F1/3275

Abstract: A method includes selecting a particular ready/busy pin (R/B #) among a plurality of R/B # pins that are associated with respective memory dice among a plurality of memory dice of a memory device. The method further includes receiving, by at least one memory dice among the plurality of memory dice, signaling indicative of performance of a memory access while the particular R/B # pin is set to low, and, initiating an internal clocking signal subsequent to receipt of the signaling indicative of performance of the memory access, wherein the internal clocking signal is associated with timing of operations performed by the plurality of memory dice.

公开(公告)号：US11775218B2

公开(公告)日：2023-10-03

申请号：US17549181

申请日：2021-12-13

Applicant: Micron Technology, Inc.

Inventor： Liang Yu ,  Jonathan Parry

IPC: G06F3/06 ,  G11C16/26 ,  G11C16/04

CPC classification number: G06F3/0659 ,  G06F3/0604 ,  G06F3/0673 ,  G11C16/26 ,  G11C16/0483

Abstract: A system to send a first command to execute an initialization process on a first memory die of a plurality of memory dies of a memory sub-system. The system reads a bit value indicating that the first memory die is executing a low peak current draw phase of the initialization process. In response to reading the bit value, sending a second command to a second memory die of the plurality of memory dies of the memory sub-system, the second command to execute the initialization process on the second memory die.

公开(公告)号：US11720262B2

公开(公告)日：2023-08-08

申请号：US17745389

申请日：2022-05-16

Applicant: Micron Technology, Inc.

Inventor： Liang Yu ,  William C. Filipiak

IPC: G06F3/06 ,  G06F18/214

CPC classification number: G06F3/0625 ,  G06F3/0614 ,  G06F3/0653 ,  G06F3/0659 ,  G06F3/0673 ,  G06F18/214

Abstract: A request is received from a host system to execute a portion of a memory management operation associated with a memory cell of a plurality of memory cells of one or more memory devices. A voltage parameter level associated with execution of the portion of the memory management operation is identified. A determination is made that a comparison of the voltage parameter level with a voltage parameter level threshold satisfies a condition. A power management action is performed in response to the condition being satisfied.

公开(公告)号：US20230084630A1

公开(公告)日：2023-03-16

申请号：US17668311

申请日：2022-02-09

Applicant: Micron Technology, Inc.

Inventor： Luca Nubile ,  Walter Di Francesco ,  Fumin Gu ,  Ali Mohammadzadeh ,  Biagio Iorio ,  Liang Yu

IPC: G06F3/06

Abstract: A memory device includes memory dice, each memory die including: a memory array; a memory to store a data structure; and control logic that includes: multiple processing threads to execute memory access operations on the memory array concurrently; a priority ring counter, the data structure to store an association between a value of the priority ring counter and a subset of the multiple processing threads; a threads manager to increment the value of the priority ring counter before a power management cycle and to identify one or more prioritized processing threads corresponding to the subset of the multiple processing threads; and a peak power manager coupled with the threads manager and to prioritize allocation of power to the one or more prioritized processing threads during the power management cycle.

公开(公告)号：US20220172767A1

公开(公告)日：2022-06-02

申请号：US17110128

申请日：2020-12-02

Applicant: Micron Technology, Inc.

Inventor： Liang Yu ,  Jeremy Wayne Butterfield ,  Jeremy Binfet

IPC: G11C11/4074 ,  G11C11/4076 ,  G11C11/409 ,  G11C5/06 ,  G11C5/14

Abstract: A variety of applications can include multiple memory die packages configured to engage in peak power management (PPM) across the multiple packages of memory dies. A communication line coupled to each memory die in the multiple memory die packages can be used to facilitate the PPM. A global management die can start a communication sequence among the multiple memory die packages to share a current budget across the multiple memory die packages by driving a signal on the communication line. Local management dies can use the received signal having clock pulses driven by the global management die on the communication line to engage in the PPM. To engage in global PPM, each memory die can be structured, to be selected as the global management die or a local management die, with one or more controllers to interface with the multiple memory die packages and to handle current budget limits.

公开(公告)号：US11334259B2

公开(公告)日：2022-05-17

申请号：US16855655

申请日：2020-04-22

Applicant: Micron Technology, Inc.

Inventor： Liang Yu ,  William C. Filipiak

IPC: G06F3/06 ,  G06K9/62

Abstract: A set of memory management operations is executed on multiple memory dies of a memory sub-system. Voltage parameter levels corresponding to the set of memory management operations are determined. Information representing a voltage parameter level and a corresponding portion of the set of memory management operations is determined based on the set of voltage parameter levels. A request is received from a host system to execute a target portion of a memory management operation. First information corresponding to the target portion of the memory management operation is identified. Based on the first voltage parameter level, power management action is performed.