公开(公告)号：US20190206883A1

公开(公告)日：2019-07-04

申请号：US16270526

申请日：2019-02-07

Applicant: Micron Technology, Inc.

Inventor： Justin B. Dorhout ,  Kunal R. Parekh ,  Martin C. Roberts ,  Mohd Kamran Akhtar ,  Chet E. Carter ,  David Daycock

IPC: H01L27/11524 ,  H01L27/11556 ,  H01L27/11551 ,  H01L27/11582

CPC classification number: H01L27/11524 ,  H01L27/11551 ,  H01L27/11553 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582

Abstract: Some embodiments include an integrated assembly with a semiconductor channel material having a boundary region where a more-heavily-doped region interfaces with a less-heavily-doped region. The more-heavily-doped region and the less-heavily-doped region have the same majority carriers. The integrated assembly includes a gating structure adjacent the semiconductor channel material and having a gating region and an interconnecting region of a common and continuous material. The gating region has a length extending along a segment of the more-heavily-doped region, a segment of the less-heavily-doped region, and the boundary region. The interconnecting region extends laterally outward from the gating region on a side opposite the semiconductor channel region, and is narrower than the length of the gating region. Some embodiments include methods of forming integrated assemblies.

公开(公告)号：US09853037B2

公开(公告)日：2017-12-26

申请号：US14949807

申请日：2015-11-23

Applicant: Micron Technology, Inc.

Inventor： Justin B. Dorhout ,  Kunal R. Parekh ,  Martin C. Roberts ,  Mohd Kamran Akhtar ,  Chet E. Carter ,  David Daycock

IPC: H01L27/11551 ,  H01L27/11524

CPC classification number: H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582

Abstract: Some embodiments include an integrated assembly with a semiconductor channel material having a boundary region where a more-heavily-doped region interfaces with a less-heavily-doped region. The more-heavily-doped region and the less-heavily-doped region have majority carriers of the same conductivity type. The integrated assembly includes a gating structure adjacent the semiconductor channel material and having a gating region and an interconnecting region of a common and continuous material. The gating region has a length extending along a segment of the more-heavily-doped region, a segment of the less-heavily-doped region, and the boundary region. The interconnecting region extends laterally outward from the gating region on a side opposite the semiconductor channel region, and is narrower than the length of the gating region. Some embodiments include methods of forming integrated assemblies.

公开(公告)号：US20170148802A1

公开(公告)日：2017-05-25

申请号：US14949807

申请日：2015-11-23

Applicant: Micron Technology, Inc.

Inventor： Justin B. Dorhout ,  Kunal R. Parekh ,  Martin C. Roberts ,  Mohd Kamran Akhtar ,  Chet E. Carter ,  David Daycock

IPC: H01L27/115

CPC classification number: H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582

Abstract: Some embodiments include an integrated assembly with a semiconductor channel material having a boundary region where a more-heavily-doped region interfaces with a less-heavily-doped region. The more-heavily-doped region and the less-heavily-doped region have the same majority carriers. The integrated assembly includes a gating structure adjacent the semiconductor channel material and having a gating region and an interconnecting region of a common and continuous material. The gating region has a length extending along a segment of the more-heavily-doped region, a segment of the less-heavily-doped region, and the boundary region. The interconnecting region extends laterally outward from the gating region on a side opposite the semiconductor channel region, and is narrower than the length of the gating region. Some embodiments include methods of forming integrated assemblies.

公开(公告)号：US20160005693A1

公开(公告)日：2016-01-07

申请号：US14321466

申请日：2014-07-01

Applicant: Micron Technology, Inc.

Inventor： Ashim Dutta ,  Mohd Kamran Akhtar ,  Shane J. Trapp

IPC: H01L23/532 ,  H01L23/528

CPC classification number: H01L23/53295 ,  H01L21/76807 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76834 ,  H01L23/4821 ,  H01L23/5222 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Some embodiments include a construction having conductive structures spaced from one another by intervening regions. Insulative structures are within the intervening regions. The insulative structures include dielectric spacers and air gaps between the dielectric spacers. Dielectric capping material is over the air gaps. The dielectric capping material is between the dielectric spacers and not over upper surfaces of the dielectric spacers. Some embodiments include a construction having a first conductive structure with an upper surface, and having a plurality of second conductive structures electrically coupled with the upper surface of the first conductive structure and spaced from one another by intervening regions. Air gap/spacer insulative structures are within the intervening regions. The air gap/spacer insulative structures have dielectric spacers along sidewalls of the second conductive structures and air gaps between the dielectric spacers. Dielectric capping material is over the air gaps.

Abstract translation: 一些实施例包括具有通过中间区域彼此间隔开的导电结构的结构。 绝缘结构位于中间区域内。 绝缘结构包括介电间隔物和介电间隔物之间​​的气隙。 介质封盖材料位于气隙之上。 电介质封盖材料介于介电间隔物之间​​，而不在电介质间隔物的上表面之上。 一些实施例包括具有带有上表面的第一导电结构的结构，并且具有与第一导电结构的上表面电耦合并且通过中间区域彼此间隔开的多个第二导电结构。 气隙/间隔绝缘结构位于中间区域内。 气隙/间隔绝缘结构在第二导电结构的侧壁和介电间隔物之间​​的空气间隙具有介电间隔物。 介质封盖材料位于气隙之上。