公开(公告)号：US20200243258A1

公开(公告)日：2020-07-30

申请号：US16258904

申请日：2019-01-28

Applicant: Micron Technology, Inc.

Inventor： Devesh Dadhich Shreeram ,  Sevim Korkmaz ,  Jian Li ,  Sanjeev Sapra ,  Dewali Ray

IPC: H01G4/008 ,  H01G4/08 ,  H01L49/02

Abstract: Methods, apparatuses, and systems related to forming a capacitor using a sacrificial material are described. An example method includes forming a first silicate material on a substrate. The method further includes forming a first nitride material on the first silicate material. The method further includes forming a second silicate material on the first nitride material. The method further includes forming a second nitride material on the second silicate material. The method further includes forming a sacrificial material on the second nitride material. The method further includes forming a column of capacitor material through the first silicate material, the first nitride material, the second silicate material, the second nitride material, and the sacrificial material. The method further includes removing the sacrificial material to expose a top portion of the capacitor material.

公开(公告)号：US20200075316A1

公开(公告)日：2020-03-05

申请号：US16676881

申请日：2019-11-07

Applicant: Micron Technology, Inc.

Inventor： Michael T. Andreas ,  Jerome A. Imonigie ,  Prashant Raghu ,  Sanjeev Sapra ,  Ian K. McDaniel

IPC: H01L21/02 ,  B81C1/00

Abstract: In an example, a wet cleaning process is performed to clean a structure having features and openings between the features while preventing drying of the structure. After performing the wet cleaning process, a polymer solution is deposited in the openings while continuing to prevent any drying of the structure. A sacrificial polymer material is formed in the openings from the polymer solution. The structure may be used in semiconductor devices, such as integrated circuits, memory devices, MEMS, among others.

公开(公告)号：US10374033B1

公开(公告)日：2019-08-06

申请号：US15915158

申请日：2018-03-08

Applicant: Micron Technology, Inc.

Inventor： Pranav P. Sharma ,  Vinay Nair ,  Sanjeev Sapra

IPC: H01L29/06 ,  H01L23/64 ,  H01L27/108 ,  H01L29/20 ,  H01L29/161

Abstract: Some embodiments include an integrated assembly having a region of first semiconductor material. The region has an upper surface along a cross-section. The upper surface has a flat-topped peak and a concavity adjacent the flat-topped peak. A pillar of second semiconductor material is over the region and directly against the region. The pillar extends vertically from the upper surface. Some embodiments include a method of forming an integrated assembly. A construction is formed to have a semiconductor region, and to have an insulative region extending over the semiconductor region and alongside the semiconductor region. A combination of three etches is utilized to expose an upper surface of the semiconductor region and to modify the upper surface of the semiconductor region to form said upper surface to include, along a cross-section, a flat-topped peak portion and an adjacent concavity portion.

公开(公告)号：US20150340320A1

公开(公告)日：2015-11-26

申请号：US14817451

申请日：2015-08-04

Applicant: Micron Technology, Inc.

Inventor： Sanjeev Sapra ,  Cheng-Shun Chen ,  Hung-Ming Tsai ,  Sheng-Wei Yang

IPC: H01L23/528 ,  H01L29/04 ,  H01L29/16

CPC classification number: H01L23/5283 ,  B82Y30/00 ,  H01L21/02238 ,  H01L21/30604 ,  H01L21/3083 ,  H01L21/31111 ,  H01L29/04 ,  H01L29/16 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of creating a trench having a portion of a bulb-shaped cross-section in silicon is disclosed. The method comprises forming at least one trench in silicon and forming a liner in the at least one trench. The liner is removed from a bottom surface of the at least one trench to expose the underlying silicon. A portion of the underlying exposed silicon is removed to form a cavity in the silicon. At least one removal cycle is conducted to remove exposed silicon in the cavity to form a bulb-shaped cross-sectional profile, with each removal cycle comprising subjecting the silicon in the cavity to ozonated water to oxidize the silicon and subjecting the oxidized silicon to a hydrogen fluoride solution to remove the oxidized silicon. A semiconductor device structure comprising the at least one trench comprising a cavity with a bulb-shaped cross-sectional profile is also disclosed.

Abstract translation: 公开了一种在硅中产生一个具有一个灯泡形横截面的沟槽的方法。 该方法包括在硅中形成至少一个沟槽并在至少一个沟槽中形成衬垫。 将衬垫从至少一个沟槽的底表面移除以暴露下面的硅。 去除底层暴露的硅的一部分以在硅中形成空腔。 进行至少一个去除周期以去除空腔中的暴露的硅以形成球形横截面轮廓，每个去除周期包括使空腔中的硅经受臭氧化水以氧化硅并将氧化的硅经受 氟化氢溶液去除氧化硅。 还公开了一种半导体器件结构，其包括包括具有灯泡形横截面轮廓的空腔的至少一个沟槽。