摘要:
An insulated gate type field effect transistor in a memory cell array is a transistor having a gate insulating film which is thicker than a gate insulating film of an insulated gate type field effect transistor in an array peripheral circuit. DRAM (Dynamic Random Access Memory) cell-based semiconductor memory device can be implemented which allows a burn-in test to be accurately performed without degrading sensing operation characteristics even under a low power supply voltage.
摘要:
A semiconductor device includes a signal line and two adjacent wirings formed on a first substrate layer, an adjacent wiring formed on a second substrate layer, and an adjacent wiring formed on a third substrate layer. A logical level on the signal line is set constant, a first line capacitance is formed between the signal line and one of the adjacent wirings on the first substrate layer, and a second line capacitance is formed between the signal line and the other of adjacent wirings on the first substrate layer. Also, a signal is supplied to the adjacent wiring on the second substrate layer and the adjacent wiring on the third substrate layer. As a result, noise from the other adjacent wirings to the signal line can be reduced.
摘要:
A semiconductor memory device has a half Vdds generating circuit. The half Vdds generating circuit includes reference voltage generating circuits, a selecting circuit, and a driver circuit. In a normal mode, the driver circuit receives voltages Vnd1 and Vpd1 obtained by dividing an array operation voltage Vdds from the reference voltage generating circuit and outputs a precharge voltage Vb1 from an output node. In a test mode, the driver circuit receives voltages Vnd2 and Vpd2 obtained by dividing the voltage Vddp from the reference-voltage generating circuit, and outputs a precharge voltage Vb1 from the output node. As a result, a voltage as a reference used to generate an intermediate voltage can be switched between the normal mode and the test mode.
摘要:
A decoupling capacitor is coupled to a sense power supply line with respect to a sense amplifier circuit group, and the sense power supply line is selectively coupled with a power supply node in response to an operation mode of a sense amplifier. In a sensing operation, the potential of a bit line is determined by redistribution of charges between the decoupling capacitor and a load capacitor of the bit line. Refresh characteristics is improved without increasing a sense current and showing down the sensing operation.
摘要:
Change in internal voltage on an internal voltage line is detected as discharging current of a capacitance element via an MOS transistor to change a charged voltage of the capacitance element. According to the charged voltage of the capacitance element, a current drive transistor is driven to supply a current to the internal voltage line. The internal voltage is stably generated with low current consumption and small occupation area.
摘要:
A manufacturing method of an anode body of a solid electrolytic capacitor which, for improving the embedded strength of the anode lead with reduced leakage current, successively throws two kinds of valve action metallic powders with different melting-down properties into a single-step press manufacturing die so as to be arranged with the valve action metallic powder whose melting-down property is larger in the neighborhood of the embedded surface of the anode lead.
摘要:
Cathode and anode sides of a plurality of solid electrolytic capacitors are connected by simultaneous electric welding. The welding step is effected to connect an anode lead of a lead frame to the anode electrode of a capacitor body and simultaneously connect a cathode lead of the lead frame to the cathode conductor layer of an adjacent capacitor body. The welding electrode for the cathode lead exerts moderate force to the capacitor bodies using a spring function of the capacitor lead. The simultaneous welding for the adjacent capacitor bodies and the moderate force prevent electrical and mechanical damages of the insulator layer of the solid electrolytic capacitors during the welding.
摘要:
A DRAM includes an internal boosting circuit, a global power-line, a plurality of blocks, a row decoder, and a POR generating circuit. Each block includes word lines, local power-lines, AND gates, drive transistors, and word line drivers. The AND gate turns a corresponding drive transistor on/off in response to a power on reset signal /POR and a corresponding block select signal. Therefore, all the local boosted power-lines are connected to the global boosted power-line during a power on reset period, whereby all the local boosted power-lines are initially charged up to boosted power supply potential Vpp.
摘要:
A video and audio signal recording apparatus includes frequency-modulators in which an audio signal, for example, a stereophonic left signal, modulates first and second carriers with different frequencies so as to provide first and second FM audio signals, respectively, a first mixing circuit for mixing the first FM audio signal with a video signal, such as, a composite color video signal having a frequency modulated luminance component signal in a frequency band separated from the band of a frequency-converted chrominance component signal so as to provide an interval therebetween for accommodating the FM audio signals, a second mixing circuit for mixing the second FM audio signal with the video signal, first and second magnetic heads respectively receiving first and second mixed audio and video signals from the first and second mixing circuits, respectively, for recording in respective record tracks which are adjacent each other on a magnetic record medium, the heads and record medium having a magnetic characteristic which varies with the frequency of the signal being recorded, and the levels of the FM audio signals in the first and second mixed signals being substantially less than the levels of the FM luminance and frequency converted chrominance signal and different from each other in the sense to compensate for the magnetic characteristic which varies with frequency. The levels of the FM audio signals in the first and second mixed audio and video signals are desirably varied upon changes in the level of the audio signal to be recorded.
摘要:
A video and audio signal recording apparatus includes first and second frequency-modulators in which a first audio signal, for example, a stereophonic left signal, modulates a first carrier and a second carrier with a frequency higher than that of the first carrier so as to provide first and second FM audio signals, respectively, third and fourth frequency-modulators in which a second audio signal, for example, the stereophonic right signal, modulates a third carrier with a frequency higher than that of the second carrier and a fourth carrier with a frequency higher than that of the third carrier so as to provide third and fourth FM audio signals, respectively, a first mixing circuit for mixing the first and third FM audio signals with a video signal, such as, a composite color video signal having a frequency modulated luminance component signal in a frequency band separated from the band of a frequency-converted chrominance component signal so as to provide an interval therebetween for accommodating the first through fourth FM audio signals, a second mixing circuit for mixing the second and fourth FM audio signals with the video signal, and first and second magnetic heads having different azimuth angles and respectively receiving first and second mixed audio and video signals from the first and second mixing circuits, respectively, for recording of such first and second mixed signals in record tracks which are adjacent each other on a magnetic record medium.