Method for manufacturing semiconductor device
    41.
    发明申请
    Method for manufacturing semiconductor device 审中-公开
    制造半导体器件的方法

    公开(公告)号:US20070059902A1

    公开(公告)日:2007-03-15

    申请号:US11320740

    申请日:2005-12-30

    申请人: Jae Kim

    发明人: Jae Kim

    IPC分类号: H01L21/30

    摘要: A method for manufacturing a semiconductor device is disclosed, in which a laser marking is formed on a rear surface of a wafer to prevent a Cu layer from being peeled by a protrusion of the laser marking. The method includes forming a laser marking on a rear surface of each wafer, and grinding a protrusion formed by the laser marking.

    摘要翻译: 公开了一种用于制造半导体器件的方法,其中在晶片的后表面上形成激光标记以防止Cu层被激光标记的突起剥离。 该方法包括在每个晶片的后表面上形成激光标记,并且研磨由激光标记形成的突起。

    Method of manufacturing flash memory device
    42.
    发明申请
    Method of manufacturing flash memory device 失效
    制造闪存设备的方法

    公开(公告)号:US20070059884A1

    公开(公告)日:2007-03-15

    申请号:US11454594

    申请日:2006-06-16

    申请人: Jae Kim

    发明人: Jae Kim

    IPC分类号: H01L21/336 H01L21/3205

    CPC分类号: H01L27/11521

    摘要: The invention provides a method of manufacturing a flash memory device. Nitride film spacers are formed on sidewalls of protruded isolation films. A recess is formed in a semiconductor substrate by a self-aligned etch process using the nitride film spacers as masks. It is therefore possible to form a uniform recess over the entire wafer. Furthermore, a floating gate is formed on the semiconductor substrate including the recess in a self-aligned manner. Accordingly, a contact area between the floating gate and the semiconductor substrate can be increased as large as a recess surface area.

    摘要翻译: 本发明提供一种制造闪速存储器件的方法。 在突出隔离膜的侧壁上形成氮化物膜间隔物。 通过使用氮化物膜间隔物作为掩模的自对准蚀刻工艺在半导体衬底中形成凹部。 因此,可以在整个晶片上形成均匀的凹部。 此外,浮动栅极以自对准的方式形成在包括凹部的半导体衬底上。 因此,浮动栅极和半导体衬底之间的接触面积可以增加到凹陷表面积的大。

    Fiber bragg grating sensor system
    43.
    发明申请
    Fiber bragg grating sensor system 有权
    光纤布拉格光栅传感器系统

    公开(公告)号:US20070058897A1

    公开(公告)日:2007-03-15

    申请号:US10570907

    申请日:2004-09-02

    申请人: Jae Yong Jae Kim

    发明人: Jae Yong Jae Kim

    IPC分类号: G02B6/00

    CPC分类号: G01D5/35303

    摘要: The present invention discloses a fiber Bragg grating sensor system. The system according to the present invention comprises a wavelength tunable laser; a coupler for splitting output light from the wavelength tunable laser into two directions; a reference wavelength generating unit for receiving one directional output light from the coupler and for generating reference wave-lengths and an absolute reference wavelength in order to measure real-time wavelengths of the wavelength tunable laser; a fiber Bragg grating array for receiving the other directional output light from the coupler and for reflecting lights at each of the wave-lengths of the grating therein; a fiber grating wavelength sensing unit for measuring the time when each of the reflected lights from the fiber Bragg grating array is detected; a signal processing unit for figuring wavelength variation information with the use of the measured signals from the reference wavelength generating unit and for obtaining each of wavelengths of the detected lights from the fiber grating wavelength sensing unit; and a laser wavelength control feedback unit for applying AC voltage and DC voltage to the wavelength tunable filter in the wavelength tunable laser. Also, polarization dependency in the sensor system can be removed further installing a depolarizer or a polarization scrambler at the output end of the wavelength tunable laser. By applying the present invention, measurement accuracy of the grating sensor system 20 can be improved due to enhanced wavelength stability and suppression of polarization dependency. Therefore, the fiber Bragg grating sensor system based on the present invention would replace conventional structure/construction diagnosis systems.

    摘要翻译: 本发明公开了一种光纤布拉格光栅传感器系统。 根据本发明的系统包括波长可调激光器; 用于将来自波长可调激光器的输出光分成两个方向的耦合器; 参考波长发生单元,用于从耦合器接收一个方向输出光并产生参考波长和绝对参考波长,以便测量波长可调激光器的实时波长; 光纤布拉格光栅阵列,用于接收来自耦合器的其它方向输出光,并用于在其中的光栅的每个波长处反射光; 用于测量来自光纤布拉格光栅阵列的每个反射光的时间的光纤光栅波长感测单元; 信号处理单元,用于利用来自参考波长发生单元的测量信号来计算波长变化信息,并且用于从光纤光栅波长感测单元获得检测到的光的每个波长; 以及激光波长控制反馈单元,用于向波长可调激光器中的波长可调滤波器施加交流电压和直流电压。 此外,传感器系统中的极化依赖性可以被去除在波长可调激光器的输出端进一步安装去偏振器或偏振扰码器。 通过应用本发明,由于增强的波长稳定性和极化依赖性的抑制,可以提高光栅传感器系统20的测量精度。 因此,基于本发明的光纤布拉格光栅传感器系统将取代传统的结构/构造诊断系统。

    Method of manufacturing header pipe, header pipe and heat exchanger with header pipe
    45.
    发明申请
    Method of manufacturing header pipe, header pipe and heat exchanger with header pipe 审中-公开
    集管,集管和集管的换热器的制造方法

    公开(公告)号:US20070006460A1

    公开(公告)日:2007-01-11

    申请号:US11478825

    申请日:2006-06-30

    申请人: Jae Kim

    发明人: Jae Kim

    IPC分类号: F28F9/02 B21D53/00 B23P15/26

    摘要: A method of manufacturing a header pipe for a heat exchanger, including (a) forming a header pipe as a single body with a vertically separating panel between first and second channels, including a plurality of slots through the pipe adapted to connect to cooling fluid tubes of a heat exchanger, (b) introducing a punch into the inside of one of the channels of the header pipe with more than one nipple facing one side of the separating panel, (c) inserting a die into the inside of the other of the channels of the header pipe with punching holes aligned with the punching nipples and the other side of the separating panel, (d) inserting a pressuring pole of a pressuring device through the header pipe slots into the one channel, and (e) moving the pressuring pole to press the punch toward the separating panel to punch more than one hole into the separating panel.

    摘要翻译: 一种制造用于热交换器的集管的方法,包括(a)在第一和第二通道之间具有垂直分隔板的单体形成集管,包括通过管的多个槽,适于连接到冷却流体管 的热交换器,(b)将一个冲头引入集管的一个通道的内部,其中多个喷嘴面向分离板的一侧,(c)将模具插入到另一个的另一个的内部 所述集管的通道具有与所述冲压接头和所述分离板的另一侧对准的冲孔,(d)将加压装置的加压杆通过所述总管槽插入所述一个通道中,以及(e) 将冲头朝向分离板压入以将多于一个孔打入分离板。

    MoSi2-Si3N4 composite coating and manufacturing method thereof

    公开(公告)号:US20060251912A1

    公开(公告)日:2006-11-09

    申请号:US11482840

    申请日:2006-07-10

    IPC分类号: C23C16/00 B32B15/04

    摘要: A MoSi2—Si3N4 composite coating which is coated on a surface of base materials which are molybden, molybden alloy, molybden-coated niobium or molybden-coated niobium alloy and a manufacturing method thereof. The MoSi2—Si3N4 composite coating on the surface of the base material can be formed by forming a Mo2N diffusion layer by vapor-depositing of nitrogen on the surface of the base material and forming a MoSi2—Si3N4 composite coating by vapor-depositing of silicon on the surface of the Mo2N diffusion layer, or the MoSi2—Si3N4 composite coating on the surface of the base material can be formed by forming a MoSi2 diffusion layer by vapor-depositing of silicon on a surface of a base material by the CVD method, transforming the MoSi2 diffusion layer into a Mo5Si3 diffusion layer by heating under a high-purity hydrogen or argon atmosphere, forming a Mo2N—Si3N4 composite diffusion layer by vapor-depositing of nitrogen on the surface of the Mo5Si3 diffusion layer by the CVD method and forming a MoSi2—Si3N4 composite coating by vapor-depositing of silicon on the surface of the Mo2N—Si3N4 composite diffusion layer. The MoSi2—Si3N4 composite coating manufactured by the above method is characterized as a structure in which Si3N4 particles are distributed in a MoSi2 grain boundary of equiaxed grains, thus to improve cyclic oxidation resistance of the base material, improve low-temperature oxidation resistance, and improve mechanical properties of the coating. Therefore, transmission of fine cracks by the thermal stress can be restrained.

    Method of forming floating gate electrode in flash memory device
    47.
    发明申请
    Method of forming floating gate electrode in flash memory device 失效
    在闪速存储器件中形成浮栅电极的方法

    公开(公告)号:US20060205158A1

    公开(公告)日:2006-09-14

    申请号:US11169892

    申请日:2005-06-30

    申请人: Jae Kim

    发明人: Jae Kim

    IPC分类号: H01L21/336

    CPC分类号: H01L27/11521 H01L21/28273

    摘要: A method of forming a floating gate electrode in a flash memory device. The method includes forming an isolation film in an inactive region so that a step with a predetermined thickness can be generated between an active region and the inactive region, which are defined in a semiconductor substrate, sequentially forming a tunnel oxide film, a polysilicon film for floating gate electrode and an anti-reflection film on the entire surface in which the isolation film is formed, and then forming photoresist patterns in predetermined regions of the anti-reflection film. The method further includes patterning the anti-reflection film using the photoresist patterns as an etch mask to form a patterned anti-reflection film in which a bottom surface is wider than a top surface and a slope is formed on sidewalls, and pattering the polysilicon film for the floating gate electrode, the tunnel oxide film and a predetermined thickness of the isolation film using the patterned anti-reflection film as an etch mask, thus forming the floating gate electrode having a slope on sidewalls.

    摘要翻译: 一种在闪速存储器件中形成浮栅电极的方法。 该方法包括在非活性区域中形成隔离膜,使得可以在半导体衬底中定义的有源区和非活性区之间产生具有预定厚度的步骤,顺序地形成隧道氧化膜,用于 在形成隔离膜的整个表面上形成浮栅电极和抗反射膜,然后在抗反射膜的预定区域中形成光致抗蚀剂图案。 该方法还包括使用光致抗蚀剂图案作为蚀刻掩模来图案化抗反射膜,以形成图案化的抗反射膜,其中底表面比顶表面宽,并且在侧壁上形成斜面,并且图案化多晶硅膜 对于浮栅电极,隧道氧化物膜和使用图案化抗反射膜作为蚀刻掩模的隔离膜的预定厚度,从而形成在侧壁上具有斜率的浮栅。

    Backlight assembly and liquid crystal display device using the same
    48.
    发明申请
    Backlight assembly and liquid crystal display device using the same 有权
    背光组件和使用其的液晶显示装置

    公开(公告)号:US20060193132A1

    公开(公告)日:2006-08-31

    申请号:US11287090

    申请日:2005-11-22

    申请人: Jae Kim Young Kim

    发明人: Jae Kim Young Kim

    IPC分类号: F21V9/16 F21V13/10

    摘要: A backlight assembly and an LCD device containing the same include a plurality of light source modules containing sequentially arranged red, green, green, blue and red LEDs. The backlight assembly can improve color realization ratio and light efficiency in an LCD device by uniform illumination of an LCD panel with color-mixed white-color light.

    摘要翻译: 背光组件和包含该背光组件的LCD装置包括多个光源模块,其包含顺序排列的红色,绿色,绿色,蓝色和红色LED。 背光组件可以通过用混合白色光的LCD面板的均匀照明来提高LCD装置中的色彩实现率和光效。

    Plasma display panel
    49.
    发明申请
    Plasma display panel 失效
    等离子显示面板

    公开(公告)号:US20060145616A1

    公开(公告)日:2006-07-06

    申请号:US11128225

    申请日:2005-05-13

    IPC分类号: H01J17/49

    摘要: A plasma display panel having higher light-emitting luminance and efficiency of a discharge cell includes: plurality of first barriers successively formed on a substrate at predetermined intervals; a plurality of first sustain electrodes formed at a width more than 40% of a pixel pitch, which is an overall distance of four of the barriers, to be orthogonal to the first barriers; a plurality of second sustain electrodes spaced apart from the first sustain electrodes at a distance less than 20% of the pixel pitch and mated with the first sustain electrodes one by one; a dielectric layer formed at a thickness of 25 μm or more to cover the first and second sustain electrodes; and a plurality of pads formed on some of the dielectric layer corresponding to the first sustain electrodes and the second sustain electrodes in each discharge cell.

    摘要翻译: 具有较高的发光亮度和放电单元的效率的等离子体显示面板包括:以预定间隔连续地形成在基板上的多个第一屏障; 多个第一维持电极,其形成为与所述第一屏障正交的宽度大于所述屏障的四个的总距离的像素间距的40%以上的宽度; 多个第二维持电极,以与所述第一维持电极间隔开的距离小于所述像素间距的20%,并与所述第一维持电极逐一配合; 形成为厚度为25μm以上的电介质层,以覆盖第一和第二维持电极; 以及形成在与放电单元中的第一维持电极和第二维持电极对应的介电层的一部分上的多个焊盘。

    Controller for driving current of semiconductor device
    50.
    发明申请
    Controller for driving current of semiconductor device 失效
    用于驱动半导体器件电流的控制器

    公开(公告)号:US20060132195A1

    公开(公告)日:2006-06-22

    申请号:US11154870

    申请日:2005-06-16

    申请人: Jae Kim Kang Lee

    发明人: Jae Kim Kang Lee

    IPC分类号: H03B1/00

    摘要: Disclosed is a controller for driving current of a semiconductor device having an over-driving function, the controller comprising: a load means supplied with an internal voltage; a plurality of switching means, each of which has a first terminal connected to an external voltage and a second terminal connected to the load means, wherein at least one of the plurality of switching means is selectively turned on/off according to an voltage level of the external voltage.

    摘要翻译: 公开了一种用于驱动具有过驱动功能的半导体器件的电流的控制器,该控制器包括:被提供内部电压的负载装置; 多个开关装置,每个开关装置具有连接到外部电压的第一端子和连接到所述负载装置的第二端子,其中,所述多个开关装置中的至少一个根据所述开关装置的电压电平选择性地导通/ 外部电压。