公开(公告)号：US20230307478A1

公开(公告)日：2023-09-28

申请号：US17705133

申请日：2022-03-25

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Duli Mao ,  Qin Wang ,  Bill Phan ,  Shiyu Sun ,  Hui Zang

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14629

Abstract: Image sensors, isolation structures, and techniques of fabrication are provided. An image sensor includes a source of electromagnetic radiation disposed on a substrate, a pixel array disposed on the substrate and thermally coupled with source of electromagnetic radiation, and an isolation structure disposed on the substrate between the source of electromagnetic radiation and the pixel array. The isolation structure can define a first reflective surface oriented on a first bias relative to a lateral axis of the pixel array and a second reflective surface oriented on a second bias relative to the lateral axis. The isolation structure can be configured to attenuate residual electromagnetic radiation reaching a proximal region of the pixel array by pairing a first reflection and a second reflection of the electromagnetic radiation by the first reflective surface and the second reflective surface.

公开(公告)号：US11637138B2

公开(公告)日：2023-04-25

申请号：US17187396

申请日：2021-02-26

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Qin Wang

IPC: H01L27/146 ,  H01L21/306

Abstract: A pixel circuit includes a trench etched into a front side surface of a semiconductor substrate. The trench includes a bottom surface etched along a crystalline plane and a tilted side surface etched along a crystalline plane that extends between the bottom surface and the front side surface. A floating diffusion is disposed in the semiconductor substrate beneath the bottom surface of the trench. A photodiode is disposed in the semiconductor substrate beneath the tilted side surface of the trench and is separated from the floating diffusion. The photodiode is configured to photogenerate image charge in response to incident light. A tilted transfer gate is disposed over at least a portion of the bottom surface and at least a portion of the tilted side surface of the trench. The tilted transfer gate is configured to transfer the image charge from the photodiode to the floating diffusion.

公开(公告)号：US11329085B2

公开(公告)日：2022-05-10

申请号：US16548697

申请日：2019-08-22

Applicant: OmniVision Technologies, Inc.

Inventor： Qin Wang ,  Gang Chen

IPC: H01L27/146

Abstract: A pixel array includes a semiconductor substrate, a plurality of isolation layer segments, and a plurality of photodiodes. Each of the plurality of isolation layer segments extends through the semiconductor substrate in a first direction. Each of the plurality of isolation layer segments encloses a portion of the semiconductor substrate in a plane perpendicular to the first direction. The plurality of isolation layer segments form a grid that defines a plurality of isolated sections of the semiconductor substrate. The plurality of isolated sections of the semiconductor substrate include the portions of the semiconductor substrate. Each of the photodiodes is formed in a respective one of the plurality of isolated sections of the semiconductor substrate.

公开(公告)号：US20220116516A1

公开(公告)日：2022-04-14

申请号：US17558199

申请日：2021-12-21

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Yuanmei Zheng ,  Qin Wang ,  Cunyu Yang ,  Guannan Chen ,  Duli Mao ,  Dyson H. Tai ,  Lindsay Alexander Grant

IPC: H04N5/225 ,  G02B7/00 ,  G02B5/20

Abstract: An image sensor includes a substrate. An array of photodiodes is disposed in the substrate. A plurality of spacers is arranged in a spacer pattern. At least one spacer of the plurality of spacers has an aspect ratio of 18:1 or greater. A buffer layer is disposed between the substrate and the spacer pattern. An array of color filters is disposed in the spacer pattern.

公开(公告)号：US10249675B1

公开(公告)日：2019-04-02

申请号：US15707940

申请日：2017-09-18

Applicant: OmniVision Technologies, Inc.

Inventor： Qin Wang ,  Gang Chen

IPC: H01L27/146

Abstract: An image sensor comprises a semiconductor material having a front side and a back side opposite the front side; a dielectric layer disposed on the front side of the semiconductor material; a poly layer disposed on the dielectric layer; an interlayer dielectric material covering both the poly layer and the dielectric layer; an inter-metal layer disposed on the interlayer dielectric material, wherein a metal interconnect is disposed in the inter-metal layer; and a contact pad trench extending from the back side of the semiconductor material into the semiconductor material, wherein the contact pad trench comprises a contact pad disposed in the contact pad trench, wherein the contact pad and the metal interconnect are coupled with a plurality of contact plugs; and at least an air gap isolates the contact pad and side walls of the contact pad trench. The poly layer and the semiconductor material between adjacent two STI structures of a plurality of first and second STI structures are used as hard masks to form the plurality of contact plugs by selectively removing the dielectric materials between a first side of the plurality of first STI structures and the metal interconnect, wherein each of the plurality of contact plugs extends from the first side of each of the plurality of first STI structures through each of the plurality of first STI structures into the interlayer dielectric material and vertically abuts the metal interconnect.

公开(公告)号：US10104285B2

公开(公告)日：2018-10-16

申请号：US15249787

申请日：2016-08-29

Applicant: OmniVision Technologies, Inc.

Inventor： Qin Wang ,  Gang Chen ,  Dajiang Yang

IPC: H04N5/232 ,  H04N5/225 ,  H04N5/374 ,  H04N9/04

Abstract: A camera system has a lens focusing incoming light through a deflector system having at least one deflector plate onto a photosensor array. An image processor captures at least a first image with the deflector system in a first position and a second image with the deflector system in a second position to provide a focal point offset in a first axis on the photosensor array, and the firmware is configured to prepare an enhanced image from at least the first and second images. A method of imaging includes focusing incoming light through a deflector system having at least one deflector plate onto a photosensor array; receiving at least a first image with the deflector system in a first position; receiving a second image with the deflector system configured providing a focal point offset on the photosensor array; and preparing an enhanced image from the first and second images.

公开(公告)号：US10103194B2

公开(公告)日：2018-10-16

申请号：US15276000

申请日：2016-09-26

Applicant: OmniVision Technologies, Inc.

Inventor： Xin Wang ,  Dajiang Yang ,  Qin Wang ,  Duli Mao ,  Dyson Hsin-Chih Tai

IPC: H01L27/146

Abstract: An image sensor includes a substrate, a plurality of light sensitive pixels, a first plurality of color filters, a plurality of reflective sidewalls, and a second plurality of color filters. The light sensitive pixels are formed on said substrate. The first plurality of color filters is disposed over a first group of the light sensitive pixels. The reflective sidewalls are formed on each side of each of the first plurality of color filters. The second plurality of color filters are disposed over a second group of light sensitive pixels and each color filter of the second plurality of color filters is separated from each adjacent filter of said first plurality of color filters by one of the reflective sidewalls. In a particular embodiment an etch-resistant layer is disposed over the first plurality of color filters and the second group of light sensitive pixels.