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    CMOS image sensor having enhanced near infrared quantum efficiency
    1.
    发明授权
    CMOS image sensor having enhanced near infrared quantum efficiency 有权

    公开(公告)号：US09991309B1

    公开(公告)日：2018-06-05

    申请号：US15642177

    申请日：2017-07-05

    Applicant: OmniVision Technologies, Inc.

    Inventor： Cunyu Yang ,  Cheng Zhao ,  Gang Chen ,  Dyson Tai ,  Chen-Wei Lu

    IPC: H04N5/33 ,  H04N5/335 ,  H04N5/3745 ,  H01L27/146

    CPC classification number: H01L27/14649 ,  H01L27/1461 ,  H01L27/1463 ,  H01L27/1464 ,  H04N5/332 ,  H04N5/335 ,  H04N5/3745

    Abstract: An image sensor comprises a semiconductor material having an illuminated surface and a non-illuminated surface; a photodiode formed in the semiconductor material extending from the illuminated surface to receive an incident light through the illuminated surface, wherein the received incident light generates charges in the photodiode; a transfer gate electrically coupled to the photodiode to transfer the generated charges from the photodiode in response to a transfer signal; a floating diffusion electrically coupled to the transfer gate to receive the transferred charges from the photodiode; a near infrared (NIR) quantum efficiency (QE) enhancement structure comprising at least two NIR QE enhancement elements within a region of the photodiode, wherein the NIR QE enhancement structure is configured to modify the incident light at the illuminated surface of the semiconductor material by at least one of diffraction, deflection and reflection, to redistribute the incident light within the photodiode to improve an optical sensitivity, including near-infrared light sensitivity, of the image sensor.

    IMAGE SENSOR WITH DIELECTRIC CHARGE TRAPPING DEVICE
    2.
    发明申请
    IMAGE SENSOR WITH DIELECTRIC CHARGE TRAPPING DEVICE 有权
    具有介电电荷捕捉装置的图像传感器

    公开(公告)号：US20150295007A1

    公开(公告)日：2015-10-15

    申请号：US14250192

    申请日：2014-04-10

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Oray Orkun Cellek ,  Dajiang Yang ,  Sing-Chung Hu ,  Philip John Cizdziel ,  Dyson Tai ,  Gang Chen ,  Cunyu Yang ,  Zhiqiang Lin

    IPC: H01L27/146 ,  H01L31/167

    CPC classification number: H01L27/14645 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14649 ,  H01L27/14658 ,  H01L31/167

    Abstract: An image sensor pixel includes a photosensitive element, a floating diffusion region, a transfer gate, a dielectric charge trapping region, and a first metal contact. The photosensitive element is disposed in a semiconductor layer to receive electromagnetic radiation along a vertical axis. The floating diffusion region is disposed in the semiconductor layer, while the transfer gate is disposed on the semiconductor layer to control a flow of charge produced in the photosensitive element to the floating diffusion region. The dielectric charge trapping device is disposed on the semiconductor layer to receive electromagnetic radiation along the vertical axis and to trap charges in response thereto. The dielectric charge trapping device is further configured to induce charge in the photosensitive element in response to the trapped charges. The first metal contact is coupled to the dielectric charge trapping device to provide a first bias voltage to the dielectric charge trapping device.

    Abstract translation: 图像传感器像素包括感光元件，浮动扩散区域，传输栅极，介电电荷俘获区域和第一金属触点。 感光元件设置在半导体层中以沿垂直轴接收电磁辐射。 浮动扩散区域设置在半导体层中，而传输栅极设置在半导体层上，以控制在感光元件中产生的电荷流向浮动扩散区域。 电介质电荷俘获装置设置在半导体层上以沿垂直轴接收电磁辐射并响应于此捕获电荷。 介电电荷俘获装置还被配置为响应于被捕获的电荷而在感光元件中感应电荷。 第一金属触点耦合到介电电荷俘获装置，以向介电电荷俘获装置提供第一偏置电压。

    BACKSIDE ILLUMINATED IMAGE SENSOR WITH IMPROVED CONTACT AREA
    4.
    发明申请
    BACKSIDE ILLUMINATED IMAGE SENSOR WITH IMPROVED CONTACT AREA 审中-公开

    公开(公告)号：US20180240833A1

    公开(公告)日：2018-08-23

    申请号：US15439793

    申请日：2017-02-22

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Dyson H. Tai ,  Cunyu Yang ,  Gang Chen ,  Jing Ye ,  Xi-Feng Gao ,  Jiaming Xing

    IPC: H01L27/146

    CPC classification number: H01L27/14636 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689

    Abstract: An image sensor includes a semiconductor material having a front side and a back side opposite the front side. The image sensor also includes a shallow trench isolation (STI) structure, an interlayer dielectric, an intermetal dielectric, and a contact area. The STI structure extends from the front side of the semiconductor material into the semiconductor material. The interlayer dielectric is disposed between the front side of the semiconductor material and the intermetal dielectric. The contact area is disposed proximate to a lateral edge of the semiconductor material. The contact area includes a metal interconnect disposed within the intermetal dielectric and a plurality of contact plugs at least partially disposed within the interlayer dielectric. The contact area also includes a contact pad. The plurality of contact plugs is coupled between the contact pad and the metal interconnect.

    Cell deep trench isolation structure for near infrared improvement
    6.
    发明授权
    Cell deep trench isolation structure for near infrared improvement 有权

    公开(公告)号：US11335718B2

    公开(公告)日：2022-05-17

    申请号：US16931229

    申请日：2020-07-16

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Hui Zang ,  Cunyu Yang ,  Gang Chen

    IPC: H01L27/146 ,  H04N5/33

    Abstract: A pixel cell includes a photodiode disposed in a pixel cell region and proximate to a front side of a semiconductor layer to generate image charge in response to incident light directed through a backside to the photodiode. A cell deep trench isolation (CDTI) structure is disposed in the pixel cell region along an optical path of the incident light to the photodiode and proximate to the backside. The CDTI structure includes a central portion extending a first depth from the backside towards the front side. Planar outer portions extend laterally outward from the central portion. The planar output portions further extend a second depth from the backside towards the front side. The first depth is greater than the second depth. Planes formed by each of the planar outer portions intersect in a line coincident with a longitudinal center line of the central portion of the CDTI structure.

    CMOS image sensor having enhanced near infrared quantum efficiency and modulation transfer function
    7.
    发明授权
    CMOS image sensor having enhanced near infrared quantum efficiency and modulation transfer function 有权

    公开(公告)号：US10224364B2

    公开(公告)日：2019-03-05

    申请号：US15666086

    申请日：2017-08-01

    Applicant: OmniVision Technologies, Inc.

    Inventor： Cheng Zhao ,  Cunyu Yang ,  Chen-Wei Lu ,  Zhiqiang Lin

    IPC: H04N5/33 ,  H04N5/335 ,  H01L27/146 ,  H01L27/148 ,  H04N5/3745

    Abstract: An image sensor comprises a semiconductor material having an illuminated surface and a non-illuminated surface; a photodiode formed in the semiconductor material extending from the illuminated surface to receive an incident light through the illuminated surface, wherein the received incident light generates charges in the photodiode; a transfer gate electrically coupled to the photodiode to transfer the generated charges from the photodiode in response to a transfer signal; a floating diffusion electrically coupled to the transfer gate to receive the transferred charges from the photodiode; and a near infrared (NIR) quantum efficiency (QE) and modulation transfer function(MTF) enhancement structure. The NIR QE and MTF enhancement structure comprises: a NIR QE enhancement sub-structure comprising at least one NIR QE enhancement elements within a photosensitive region of the photodiode, wherein the NIR QE enhancement sub-structure is configured to modify the incident light at the illuminated surface of the semiconductor material by at least one of diffraction, deflection and reflection, to redistribute the incident light within the photodiode to improve optical sensitivity, including NIR light sensitivity, of the image sensor; and a MTF enhancement sub-structure disposed on the non-illuminated surface of the semiconductor material, facing toward the NIR QE enhancement sub-structure, wherein the MTF enhancement structure has a geometry corresponding to the NIR QE enhancement sub-structure, to ensure the incident light is still within the photodiode after redistribution.

    Pixel, associated image sensor, and method
    10.
    发明授权
    Pixel, associated image sensor, and method 有权

    公开(公告)号：US11843019B2

    公开(公告)日：2023-12-12

    申请号：US16689847

    申请日：2019-11-20

    Applicant: OmniVision Technologies, Inc.

    Inventor： Hui Zang ,  Cunyu Yang ,  Gang Chen

    IPC: H01L27/146

    CPC classification number: H01L27/14645 ,  H01L27/14603 ,  H01L27/14683

    Abstract: A pixel includes a semiconductor substrate, a low-κ dielectric, and a photodiode region in the semiconductor substrate. The semiconductor substrate has a substrate top surface that forms a trench. The trench extends into the semiconductor substrate and has a trench depth relative to a planar region of the substrate top surface surrounding the trench. The low-κ dielectric is in the trench between the trench depth and a low-κ depth with respect to the planar region. The low-κ depth is less than the trench depth. The photodiode region is in the semiconductor substrate and includes (i) a bottom photodiode section beneath the trench and (ii) a top photodiode section adjacent to the trench. The top photodiode section begins at a photodiode depth, with respect to the planar region, that is less than the low-κ depth, and extends toward and adjoining the bottom photodiode section.

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