公开(公告)号：US20150194570A1

公开(公告)日：2015-07-09

申请号：US14662037

申请日：2015-03-18

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Matthias Peter ,  Tobias Meyer ,  Alexander Walter ,  Tetsuya Taki ,  Juergen Off ,  Rainer Butendeich ,  Joachim Hertkorm

IPC: H01L33/06 ,  H01L33/24

CPC classification number: H01L33/06 ,  H01L33/0079 ,  H01L33/04 ,  H01L33/14 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/382 ,  H01L2224/16225 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor chip includes a semiconductor body with a semiconductor layer sequence. An active region intended for generating radiation is arranged between an n-conductive multilayer structure and a p-conductive semiconductor layer. A doping profile is formed in the n-conductive multilayer structure which includes at least one doping peak.

Abstract translation: 半导体芯片包括具有半导体层序列的半导体本体。 用于产生辐射的有源区域布置在n导电多层结构和p导电半导体层之间。 掺杂分布形成在包括至少一个掺杂峰的n导电多层结构中。