利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

20 条记录 (耗时 0.014 秒)

    Light Source
    1.
    发明申请
    Light Source 审中-公开

    公开(公告)号：US20190051788A1

    公开(公告)日：2019-02-14

    申请号：US16079020

    申请日：2017-05-29

    申请人： OSRAM Opto Semiconductors GmbH

    发明人： Frank Singer ,  Alexander Linkov ,  Stefan Illek ,  Rainer Butendeich ,  Christoph Koller ,  Thomas Schwarz

    IPC分类号： H01L31/167 ,  H01L25/13 ,  H01L31/0232 ,  H01L31/02 ,  H01L25/16

    摘要： A light source is disclosed. In an embodiment a light source includes at least one first semiconductor emitter for generating first light, at least one second semiconductor emitter for generating second light, the second light having a different color than the first light, a light mixing body configured to produce a mixed light from the first and second lights and a detector on the light mixing body, the detector configured to determine a color locus of the mixed light, wherein the first and second semiconductor emitters are arranged along a line and have different distances from the detector, wherein the light mixing body is arranged on side surfaces of the first and second semiconductor emitters and in projection onto the side surfaces at least partially covers each of the side surfaces, so that the detector receives light from each of the first and second semiconductor emitters through the light mixing body.

    Optoelectronic element and optoelectronic component
    3.
    发明授权
    Optoelectronic element and optoelectronic component 有权

    公开(公告)号：US10446723B2

    公开(公告)日：2019-10-15

    申请号：US15532486

    申请日：2015-12-02

    申请人： OSRAM Opto Semiconductors GmbH

    发明人： Rainer Butendeich ,  Ion Stoll ,  Martin Mandl ,  Martin Strassburg

    IPC分类号： H01L33/50 ,  H01L33/08 ,  H01L33/18

    摘要： The invention relates to an optoelectronic element comprising a semiconductor chip (12) that emits a blue-green light (4) during operation and has at least one light passage surface (12a) through which the blue-green light (4) emitted during operation passes and comprising a conversion element (3) which comprises fluorescent particles (31), in particular fluorescent particles of only one type, and which is arranged on the light passage surface (12a) at least in some areas. The fluorescent particles (31) at least partly convert the blue-green light (4) into a red light (5), and the optoelectronic element emits a white mixed light (6) which contains non-converted components of the blue-green light (4) and components of the red light (5).

    METHOD OF OPERATING A SEMICONDUCTOR LIGHT SOURCE, AND SEMICONDUCTOR LIGHT SOURCE
    4.
    发明申请
    METHOD OF OPERATING A SEMICONDUCTOR LIGHT SOURCE, AND SEMICONDUCTOR LIGHT SOURCE 审中-公开

    公开(公告)号：US20190021150A1

    公开(公告)日：2019-01-17

    申请号：US16068200

    申请日：2017-02-07

    申请人： OSRAM Opto Semiconductors GmbH

    发明人： Rainer Butendeich ,  Stefan Illek

    IPC分类号： H05B33/08 ,  F21K9/00

    摘要： A method of operating a semiconductor light source, wherein the semiconductor light source includes at least one first light source that generates blue light; at least one second light source that generates bluish-white light; at least one third light source that produces greenish-white light; at least one fourth light source that generates red light, wherein no further light sources are present, the light sources can be controlled independently of one another, the light sources are operated in a continuous wave mode and not by pulse width modulation, and the semiconductor light source is operated such that all in all white mixed light having a tunable correlated color temperature is generated, and each of the light sources is operated exclusively with at least 5% of an intended maximum current in the switched-on state of the semiconductor light source so that an undercurrent operation of the light sources is prevented.

    Method for Producing a Thin-Film Semiconductor Body and Thin-Film Semiconductor Body
    6.
    发明申请
    Method for Producing a Thin-Film Semiconductor Body and Thin-Film Semiconductor Body 审中-公开
    制造薄膜半导体体和薄膜半导体体的方法

    公开(公告)号：US20160049550A1

    公开(公告)日：2016-02-18

    申请号：US14927325

    申请日：2015-10-29

    申请人： OSRAM Opto Semiconductors GmbH

    发明人： Christian Leirer ,  Anton Vogl ,  Andreas Biebersdorf ,  Rainer Butendeich ,  Christian Rumbolz

    IPC分类号： H01L33/20

    CPC分类号： H01L33/20 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02664 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/22 ,  H01L2933/0091

    摘要： A method for producing a thin-film semiconductor body is provided. A growth substrate is provided. A semiconductor layer with funnel-shaped and/or inverted pyramid-shaped recesses is epitaxially grown onto the growth substrate. The recesses are filled with a semiconductor material in such a way that pyramid-shaped outcoupling structures arise. A semiconductor layer sequence with an active layer is applied on the outcoupled structures. The active layer is suitable for generating electromagnetic radiation. A carrier is applied onto the semiconductor layer sequence. At least the semiconductor layer with the funnel-shaped and/or inverted pyramid-shaped recesses is detached, such that the pyramid-shaped outcoupling structures are configured as projections on a radiation exit face of the thin-film semiconductor.

    摘要翻译： 提供一种制造薄膜半导体体的方法。 提供生长衬底。 在生长衬底上外延生长具有漏斗形和/或倒置金字塔形凹陷的半导体层。 这些凹部以半导体材料填充，使得出现棱锥形的外耦合结构。 具有有源层的半导体层序列被应用于外耦合结构。 有源层适用于产生电磁辐射。 将载体施加到半导体层序列上。 至少具有漏斗形和/或倒置金字塔状凹部的半导体层被分离，使得金字塔形外耦合结构被配置为在薄膜半导体的辐射出射面上的突起。

    LUMINESCENCE CONVERSION ELEMENT AND OPTOELECTRONIC SEMICONDUCTOR COMPONENT COMPRISING SUCH A LUMINESCENCE CONVERSION ELEMENT AND METHOD OF PRODUCING SAME
    8.
    发明申请
    LUMINESCENCE CONVERSION ELEMENT AND OPTOELECTRONIC SEMICONDUCTOR COMPONENT COMPRISING SUCH A LUMINESCENCE CONVERSION ELEMENT AND METHOD OF PRODUCING SAME 有权
    包含这种发光变换元件的发光元件和光电子半导体元件及其生产方法

    公开(公告)号：US20160329470A1

    公开(公告)日：2016-11-10

    申请号：US15036893

    申请日：2014-11-17

    申请人： OSRAM OPTO SEMICONDUCTORS GMBH

    发明人： Rainer Butendeich ,  Hailing Cui ,  Reiner Windisch ,  Jörg Frischeisen ,  Stefan Lange

    IPC分类号： H01L33/50 ,  H01L25/075

    CPC分类号： H01L33/00 ,  F21V9/30 ,  H01L25/0753 ,  H01L33/504 ,  H01L2933/0041 ,  H01L2933/0091

    摘要： A luminescence conversion element for wavelength conversion of primary electromagnetic radiation into secondary electromagnetic radiation includes first luminescent material particles that, when excited by the primary electromagnetic radiation, emit a first electromagnetic radiation, a peak wavelength of which is at least 515 nm to at most 550 nm of a green region of the electromagnetic spectrum; second luminescent material particles that, when excited by the primary electromagnetic radiation, emit a second electromagnetic radiation, a peak wavelength of which is at least 595 nm to at most 612 nm of a yellow-red region of the electromagnetic spectrum; and third luminescent material particles that, when excited by the primary electromagnetic radiation, emit a third electromagnetic radiation, a peak wavelength of which is at least 625 nm to at most 660 nm of a red region of the electromagnetic spectrum.

    摘要翻译： 用于主电磁辐射到次级电磁辐射的波长转换的发光转换元件包括第一发光材料颗粒，当第一电磁辐射激发时，发射第一电磁辐射，其峰值波长为至少515nm至至多550 nm的电磁光谱的绿色区域; 第二发光材料颗粒，当被主要电磁辐射激发时，其发射第二电磁辐射，其峰值波长为电磁光谱的黄色 - 红色区域的至少595nm至最多612nm; 以及第三发光材料颗粒，当被主电磁辐射激发时，其发射第三电磁辐射，其峰值波长为电磁光谱的红色区域的至少625nm至至多660nm。

    OPTOELECTRONIC COMPONENT
    10.
    发明申请
    OPTOELECTRONIC COMPONENT 审中-公开

    公开(公告)号：US20190229244A1

    公开(公告)日：2019-07-25

    申请号：US16254659

    申请日：2019-01-23

    申请人： OSRAM Opto Semiconductors GmbH

    发明人： Rainer Butendeich ,  Alexander Baumgartner

    IPC分类号： H01L33/50 ,  C09K11/77 ,  C09K11/61 ,  C09K11/08

    摘要： An optoelectronic component includes a semiconductor chip that emits primary radiation from the blue spectral region, a conversion element including at least three phosphors each converting the primary radiation into secondary radiation, wherein the first phosphor emits secondary radiation from the green spectral region, the second phosphor emits secondary radiation from the red spectral region, the third phosphor is a potassium-silicon-fluoride phosphor that emits secondary radiation from the red spectral region, and the component has an Ra value of at least 80 and an R9 value of at least 75, and emits white mixed radiation.