NORMALLY-OFF ELECTRONIC SWITCHING DEVICE
    41.
    发明申请
    NORMALLY-OFF ELECTRONIC SWITCHING DEVICE 有权
    正常电子开关装置

    公开(公告)号:US20090167411A1

    公开(公告)日:2009-07-02

    申请号:US12343081

    申请日:2008-12-23

    Abstract: A device capable of bidirectional on-off switching control of an electric circuit. Included is a normally-on HEMT connected between a pair of terminals of the device. A normally-off MOSFET of relatively low antivoltage strength is connected between the HEMT and one of the pair of terminals, and another similar MOSFET between the HEMT and the other of the terminal pair. A diode is connected in inverse parallel with each MOSFET, and two other diodes are connected between the gate of the HEMT and the pair of terminals respectively. The switching device as a whole is normally off.

    Abstract translation: 一种能够对电路进行双向开 - 关切换控制的装置。 包括连接在设备的一对终端之间的通常的HEMT。 HEMT与一对端子之间连接一个具有相对较低抗电压强度的常闭MOSFET,以及HEMT与另一个端子对之间的另一个类似的MOSFET。 二极管与每个MOSFET反并联连接,另外两个二极管分别连接在HEMT的栅极和一对端子之间。 整个开关装置通常关闭。

    Ink jet head and ink jet recording apparatus
    42.
    发明授权
    Ink jet head and ink jet recording apparatus 失效
    喷墨头和喷墨记录装置

    公开(公告)号:US07192130B2

    公开(公告)日:2007-03-20

    申请号:US10752511

    申请日:2004-01-08

    Abstract: An ink jet head includes: a pressure chamber that stores an ink and has an orifice; a filter plate including a through hole portion and a filter portion, the through hold portion disposed separately from the filter portion with a certain gap; a supply unit that supplies the ink through the filter portion to the pressure chamber; and a jetting unit that jets ink droplets through the orifice from the pressure chamber. The filter portion is formed to have a first aperture ratio. At least one through hole is formed on the through hole potion so that the filter portion has a second aperture ratio. The first aperture ratio is smaller than the second aperture ratio.

    Abstract translation: 喷墨头包括:储存油墨并具有孔口的压力室; 所述过滤板包括通孔部分和过滤器部分,所述通过保持部分与所述过滤器部分分开设置有一定间隙; 供应单元,其通过过滤器部分将油墨供应到压力室; 以及喷射单元,其从压力室喷射墨滴通过孔口。 过滤器部分形成为具有第一孔径比。 在通孔部分上形成至少一个通孔,使得过滤器部分具有第二孔径比。 第一开口率小于第二开口率。

    Semiconductor device
    43.
    发明申请
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US20060261356A1

    公开(公告)日:2006-11-23

    申请号:US11490328

    申请日:2006-07-20

    CPC classification number: H01L29/41766 H01L29/2003 H01L29/7787 H01L29/812

    Abstract: A semiconductor device having a GaN-based main semiconductor region formed on a silicon substrate via a buffer region. Source, drain and gate electrodes are formed on the main semiconductor region, and a back electrode on the back of the substrate. The substrate is constituted of two semiconductor regions of opposite conductivity types, with a pn junction therebetween which is conducive to a higher voltage-withstanding capability between the drain and back electrodes.

    Abstract translation: 一种具有通过缓冲区形成在硅衬底上的GaN基主半导体区的半导体器件。 源极,漏极和栅电极形成在主半导体区域上,背面电极形成在衬底的背面。 衬底由具有相反导电类型的两个半导体区域构成,其间具有pn结,其有利于漏极和背电极之间更高的耐压能力。

    Inkjet head and a method of manufacturing the same
    45.
    发明申请
    Inkjet head and a method of manufacturing the same 失效
    喷墨头及其制造方法

    公开(公告)号:US20050012782A1

    公开(公告)日:2005-01-20

    申请号:US10890261

    申请日:2004-07-14

    CPC classification number: B41J2/14274 B41J2002/14419

    Abstract: The disclosure is concerned with an inkjet head comprising; a chamber substrate for forming an ink flow passage; a diaphragm substrate including a diaphragm for pressurizing a pressure chamber disposed in the chamber substrate; and a nozzle substrate for jetting ink pressurized by the diaphragm, wherein the diaphragm substrate is made of silicon, the diaphragm is made of a material selected from the group of silicon oxide film and metal film, and the diaphragm is formed in the diaphragm substrate. The disclosure is also directed to a method of manufacturing the inkjet head.

    Abstract translation: 本公开涉及一种喷墨头,包括: 用于形成油墨流动通道的室基板; 膜片基板,包括用于对设置在所述室基板中的压力室进行加压的隔膜; 以及用于喷射由所述隔膜加压的墨的喷嘴基板,其中所述隔膜基板由硅制成,所述隔膜由选自氧化硅膜和金属膜的材料制成,并且所述隔膜形成在所述隔膜基板中。 本发明还涉及一种制造喷墨头的方法。

    Method of producing piezoelectric actuator
    49.
    发明授权
    Method of producing piezoelectric actuator 有权
    压电致动器的制造方法

    公开(公告)号:US08713768B2

    公开(公告)日:2014-05-06

    申请号:US13416055

    申请日:2012-03-09

    CPC classification number: B41J2/14233 H01L41/0973 H01L41/317 H01L41/33

    Abstract: A method of producing a piezoelectric actuator includes a first electrode film forming process; a monomolecular film forming process; a pattering process of removing a monomolecular film having a rectangular shape; an application process of applying a precursor solution to the first electrode film exposed in the rectangular shape; a piezoelectric film forming process of converting the applied precursor solution into a piezoelectric film; and a second electrode film forming process. Materials of the precursor solution, the first electrode film, and the monomolecular film are adjusted so that the first electrode film is lyophilic and the monomolecular film is lyophobic to the precursor solution. The piezoelectric film forming process includes a drying and thermally decomposing process of drying and thermally decomposing the precursor solution; and a crystallizing process of crystallizing a thermally decomposed piezoelectric material.

    Abstract translation: 制造压电致动器的方法包括:第一电极膜形成工序; 单分子成膜工艺; 去除具有矩形形状的单分子膜的图案化方法; 将前体溶液施加到以矩形形状暴露的第一电极膜的施加方法; 将所施加的前体溶液转化成压电膜的压电膜形成方法; 和第二电极膜形成工艺。 调节前体溶液,第一电极膜和单分子膜的材料,使得第一电极膜是亲液性的,并且单分子膜与前体溶液疏液。 压电薄膜形成方法包括干燥和热分解前体溶液的热分解过程; 以及结晶热分解压电材料的结晶过程。

    Semiconductor device having transistor and rectifier

    公开(公告)号:US08421123B2

    公开(公告)日:2013-04-16

    申请号:US13084777

    申请日:2011-04-12

    Abstract: A semiconductor device having a transistor and a rectifier includes: a current path; a first main electrode having a rectifying function and arranged on one end of the current path; a second main electrode arranged on the other end of the current path; an auxiliary electrode arranged in a region of the current path between the first main electrode and the second main electrode; a third main electrode arranged on the one end of the current path apart from the first main electrode along a direction intersecting the current path; and a control electrode arranged in a region of the current path between the second main electrode and the third main electrode. The transistor includes the current path, the second main electrode, the third main electrode, and the control electrode. The rectifier includes the current path, the first main electrode, the second main electrode, and the auxiliary electrode.

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