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公开(公告)号：US10819924B2
公开(公告)日：2020-10-27
申请号：US16444841
申请日：2019-06-18
Inventor： Yasuo Miyake , Masashi Murakami , Tokuhiko Tamaki , Yoshiaki Satou
IPC: H04N5/353 , H01L27/30 , H01L27/146
Abstract: An electronic device including: a photosensitive layer that converts incident light into a signal charge; a first electrode that collects the signal charge; and a first carrier blocking layer between the photosensitive layer and the first electrode. The carrier blocking layer is configured to block a carrier a polarity of which is different from that of the signal charge. Under a first range of biases on the electronic device, the photosensitive layer is configured to generate photocurrent while illuminated. Under a second range of biases on the electronic device, the photosensitive layer is configured to generate lower photocurrent while illuminated compared to under the first range of biases.
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公开(公告)号：US10720457B2
公开(公告)日：2020-07-21
申请号：US16164590
申请日：2018-10-18
Inventor： Masayuki Takase , Takayoshi Yamada , Tokuhiko Tamaki
IPC: H01L27/146 , H04N5/378 , H04N5/353 , H01L27/30
Abstract: An imaging device includes a pixel comprising a photoelectric conversion layer having a first surface and a second surface opposite to the first surface; a pixel electrode on the first surface; an auxiliary electrode on the first surface, the auxiliary electrode being spaced from the pixel electrode; an upper electrode on the second surface, the upper electrode facing the pixel electrode and the auxiliary electrode; and an amplification transistor having a gate coupled to the pixel electrode. The imaging device also includes voltage application circuitry that generates a first voltage and a second voltage different from the first voltage, the voltage application circuitry being coupled to the auxiliary electrode. The voltage application circuitry selectively supplies either the first voltage or the second voltage to the auxiliary electrode.
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公开(公告)号：US10594948B2
公开(公告)日：2020-03-17
申请号：US15497193
申请日：2017-04-25
Inventor： Yoshiaki Satou , Yasuo Miyake , Yasunori Inoue , Tokuhiko Tamaki
Abstract: An imaging device includes a unit pixel cell. The unit pixel cell captures first data in a first exposure period and captures second data in a second exposure period different from the first exposure period, the first exposure period and the second exposure period being included in a frame period. A sensitivity per unit time of the unit pixel cell in the first exposure period is different from a sensitivity per unit time of the unit pixel cell in the second exposure period. The imaging device outputs multiple-exposure image data including at least the first data and the second data.
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公开(公告)号：US10535827B2
公开(公告)日：2020-01-14
申请号：US16352552
申请日：2019-03-13
Inventor： Tokuhiko Tamaki
IPC: H01L27/146 , H01L51/42 , H01L31/00 , H01L31/10 , H04N5/33 , H04N5/361 , H04N5/374 , H04N9/04 , H01L27/30 , H01L51/00 , H01L51/44 , H04N5/359 , H04N5/369 , H04N5/378
Abstract: An optical sensor includes a semiconductor layer including a first region, a second region, and a third region between the first region and the second region, a first electrode, a photoelectric conversion layer between the third region and the first electrode, and voltage supply circuitry applying a voltage between the first electrode and the first region to apply a bias voltage to the photoelectric conversion layer. The photoelectric conversion layer has a characteristic showing how a density of current flowing through the photoelectric conversion layer varies with the bias voltage applied to the photoelectric conversion layer. The characteristic includes a third voltage range where an absolute value of a rate of change of the current density relative to the bias voltage is less than in a first voltage range and a second voltage range, the third voltage range being between the first voltage range and the second voltage range.
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公开(公告)号：US10375332B2
公开(公告)日：2019-08-06
申请号：US15406822
申请日：2017-01-16
Inventor： Kazuko Nishimura , Tokuhiko Tamaki , Masashi Murakami
IPC: H04N5/369 , H04N5/363 , H04N5/378 , H01L27/146 , H04N5/359 , H04N5/3745
Abstract: An imaging device includes: a first pixel cell including a first photoelectric converter that generates a first signal by photoelectric conversion, and a first signal detection circuit that is electrically connected to the first photoelectric converter and detects the first signal; and a second pixel cell including a second photoelectric converter that generates a second signal by photoelectric conversion, and a second signal detection circuit that is electrically connected to the second photoelectric converter and detects the second signal. A sensitivity of the first pixel cell is higher than a sensitivity of the second pixel cell. A circuit configuration of the first signal detection circuit is different from a circuit configuration of the second signal detection circuit.
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Patent Agency Ranking
公开(公告)号：US10225493B2
公开(公告)日：2019-03-05
申请号：US15964108
申请日：2018-04-27
Inventor： Yasuo Miyake , Masashi Murakami , Tokuhiko Tamaki , Yoshiaki Satou
Abstract: A method for driving an imaging device which includes unit pixel cells each including a first electrode, a second electrode, and a photoelectric conversion layer between the first electrode and second electrode, the photoelectric conversion layer having a photocurrent characteristic including a first voltage range, a second voltage range, and a third voltage range where an absolute value of a rate of change of the current density relative to the bias voltage is less than in the first voltage range and the second voltage range, the method including supplying a first voltage to the second electrode in a first period, and supplying a second voltage different from the first voltage to the second electrode in a second period different from the first period such that the bias voltage applied to the photoelectric conversion layer falls within the third voltage range.
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公开(公告)号：US10200647B2
公开(公告)日：2019-02-05
申请号：US15946448
申请日：2018-04-05
Inventor： Tokuhiko Tamaki
Abstract: An imaging device, including: a semiconductor substrate; a first pixel including a first photoelectric converter that converts incident light into first charges, a first charge detection circuit on the semiconductor substrate, the first charge detection circuit electrically connected to the first photoelectric converter and detecting the first charges, and a first capacitive element electrically connected to the first photoelectric converter, the first capacitive element storing at least a part of the first charges; and a second pixel comprising a second photoelectric converter that converts incident light into second charges, and a second charge detection circuit on the semiconductor substrate, the second charge detection circuit electrically connected to the second photoelectric converter and detecting the second charges, wherein the first capacitive element is at least partially located between the first photoelectric converter and the second photoelectric converter when viewed from a normal direction of the semiconductor substrate.
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公开(公告)号：US10157952B2
公开(公告)日：2018-12-18
申请号：US14714293
申请日：2015-05-17
Inventor： Tokuhiko Tamaki , Junji Hirase , Shigeo Yoshii
IPC: H01L27/146
Abstract: An imaging device includes a semiconductor substrate and at least one unit pixel cell provided to a surface of the semiconductor substrate. Each of the at least one unit pixel cell includes: a photoelectric converter including a pixel electrode and a photoelectric conversion layer located on the pixel electrode, the photoelectric converter converting incident light into electric charges; a charge detection transistor that includes a part of the semiconductor substrate and detects the electric charges; and a reset transistor that includes a gate electrode and initializes a voltage of the photoelectric converter. The pixel electrode is located above the charge detection transistor. The reset transistor is located between the charge detection transistor and the pixel electrode. When viewed from a direction normal to the surface of the semiconductor substrate, at least a part of the gate electrode is located outside the pixel electrode.
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公开(公告)号：US10142570B1
公开(公告)日：2018-11-27
申请号：US16040905
申请日：2018-07-20
Inventor： Takayoshi Yamada , Masayuki Takase , Tokuhiko Tamaki , Masashi Murakami
Abstract: An imaging device including at least one pixel, where each of the at least one pixels includes a photoelectric conversion layer having a first surface and a second surface being on a side opposite to the first surface; a first electrode located on the first surface; a second electrode located on the first surface, the second electrode being separated from the first electrode, a first voltage being applied to the second electrode; a third electrode located on the second surface, the third electrode opposing to the first electrode and the second electrode, a second voltage being applied to the third electrode; and an amplifier transistor having a gate electrically connected to the first electrode, where an absolute value of a difference between the first voltage and the second voltage is larger than an absolute value of a difference between the second voltage and a voltage of the first electrode.
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公开(公告)号：US20180315798A1
公开(公告)日：2018-11-01
申请号：US15945790
申请日：2018-04-05
Inventor： NAOKI SHIMASAKI , Tokuhiko Tamaki , SANSHIRO SHISHIDO
CPC classification number: H01L27/307 , G01J1/44 , G01J2001/448 , G01S7/4863 , G01S17/08 , H01L27/146 , H01L27/283 , H01L51/0078 , H01L51/4253 , H01L51/442 , H04N5/3559 , H04N5/3572 , H04N5/3597 , H04N5/374 , H04N5/37452 , H04N5/378 , Y02E10/549
Abstract: A photodetector includes: a semiconductor substrate including first and second impurity regions; a gate insulating layer located on a region of the semiconductor substrate, the region being between the first and second impurity regions, the gate insulating layer including a photoelectric conversion layer; a gate electrode located on the gate insulating layer and having a light-transmitting property; a first charge transfer channel transferring signal charges corresponding to a current occurring between the first impurity region and the second impurity region depending on a change in a dielectric constant of the photoelectric conversion layer caused by light incidence on the photoelectric conversion layer; a second charge transfer channel diverging from the first charge transfer channel; a first charge storage storing charges, among the signal charges, transferred via the second charge transfer channel; and a first gate switching transfer and shutdown of charges passing through the second charge transfer channel.
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