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公开(公告)号:US20180315798A1
公开(公告)日:2018-11-01
申请号:US15945790
申请日:2018-04-05
Inventor: NAOKI SHIMASAKI , Tokuhiko Tamaki , SANSHIRO SHISHIDO
CPC classification number: H01L27/307 , G01J1/44 , G01J2001/448 , G01S7/4863 , G01S17/08 , H01L27/146 , H01L27/283 , H01L51/0078 , H01L51/4253 , H01L51/442 , H04N5/3559 , H04N5/3572 , H04N5/3597 , H04N5/374 , H04N5/37452 , H04N5/378 , Y02E10/549
Abstract: A photodetector includes: a semiconductor substrate including first and second impurity regions; a gate insulating layer located on a region of the semiconductor substrate, the region being between the first and second impurity regions, the gate insulating layer including a photoelectric conversion layer; a gate electrode located on the gate insulating layer and having a light-transmitting property; a first charge transfer channel transferring signal charges corresponding to a current occurring between the first impurity region and the second impurity region depending on a change in a dielectric constant of the photoelectric conversion layer caused by light incidence on the photoelectric conversion layer; a second charge transfer channel diverging from the first charge transfer channel; a first charge storage storing charges, among the signal charges, transferred via the second charge transfer channel; and a first gate switching transfer and shutdown of charges passing through the second charge transfer channel.
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公开(公告)号:US20170328776A1
公开(公告)日:2017-11-16
申请号:US15662654
申请日:2017-07-28
Inventor: NAOKI SHIMASAKI , TOKUHIKO TAMAKI , SANSHIRO SHISHIDO
IPC: G01J5/08 , H04N5/232 , H04N3/14 , H01L27/146 , G01J1/04 , G01J5/20 , G01J3/36 , G01J1/42 , H04N5/33
CPC classification number: G01J5/0853 , G01J1/0407 , G01J1/42 , G01J3/36 , G01J5/0846 , G01J5/20 , H01L27/14609 , H01L27/14643 , H01L27/14665 , H01L27/14676 , H04N3/1512 , H04N5/23241 , H04N5/33 , H04N5/3575 , H04N5/3745 , H04N5/378
Abstract: An optical sensor includes: a semiconductor layer including a first region, a second region, and a third region between the first region and the second region; a gate electrode facing to the semiconductor layer; a gate insulating layer between the third region and the gate electrode, the gate insulating layer including a photoelectric conversion layer: a signal detection circuit including a first signal detection transistor, a first input of the first signal detection transistor being electrically connected to the first region; a first transfer transistor connected between the first region and the first input; and a first capacitor having one end electrically connected to the first input. The signal detection circuit detects an electrical signal corresponding to a change of a dielectric constant of the photoelectric conversion layer, the change being caused by incident light.
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公开(公告)号:US20160360131A1
公开(公告)日:2016-12-08
申请号:US15164910
申请日:2016-05-26
Inventor: NAOKI SHIMASAKI , MASASHI MURAKAMI
IPC: H04N5/363 , H04N5/3745 , H04N5/378
CPC classification number: H04N5/363 , H04N5/37455 , H04N5/37457 , H04N5/378
Abstract: An imaging device includes: a photoelectric converter generating a signal; a signal detection circuit detecting the signal and including a first transistor having a first control terminal connected to the photoelectric converter, a first input terminal, and a first output terminal, a second transistor having a second control terminal connected to the photoelectric converter, a second input terminal, and a second output terminal, a third transistor having a third control terminal, a third input terminal, and a third output terminal, one of the third input and output terminal connected to one of the second input and output terminal; an output signal line connected to one of the first input and output terminal, and to the other of the third input and output terminal; and a voltage supply circuit connected to the third control terminal, selectively supplying a first voltage or a second voltage to the third control terminal.
Abstract translation: 一种成像装置,包括:产生信号的光电转换器; 检测信号的信号检测电路,包括具有连接到光电转换器的第一控制端的第一晶体管,第一输入端和第一输出端,具有连接到光电转换器的第二控制端的第二晶体管, 输入端子和第二输出端子,具有第三控制端子,第三输入端子和第三输出端子的第三晶体管,所述第三输入和输出端子中的一个连接到所述第二输入和输出端子之一; 连接到第一输入和输出端子之一的输出信号线,以及连接到第三输入和输出端子中的另一个的输出信号线; 以及与第三控制端子连接的电压供给电路,向第三控制端子选择性地供给第一电压或第二电压。
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