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59 条记录 (耗时 0.028 秒)

    Imaging device
    3.
    发明授权
    Imaging device 有权

    公开(公告)号：US11743609B2

    公开(公告)日：2023-08-29

    申请号：US17230870

    申请日：2021-04-14

    申请人： Panasonic Intellectual Property Management Co., Ltd.

    发明人： Yasuo Miyake

    IPC分类号： H04N25/583 ,  H01L27/146 ,  H04N25/59 ,  H04N25/77 ,  H04N25/571 ,  H04N25/589 ,  H04N25/75

    CPC分类号： H04N25/583 ,  H01L27/14665 ,  H04N25/571 ,  H04N25/589 ,  H04N25/59 ,  H04N25/77 ,  H04N25/75

    摘要： An imaging device including a pixel array including pixels, each pixel including a photoelectric converter including a first and second electrode, and a first photoelectric conversion layer between the first and second electrode, and a transistor having a gate coupled to the first electrode, the transistor outputting a signal corresponding to an amount of the signal charge collected by the first electrode. The device further including voltage supply circuitry coupled to the second electrode of each of the pixels, where the voltage supply circuitry, in each of consecutive frame periods, supplies a first voltage two or more times to form exposure periods in which the signal charge is collected by the first electrode, and supplies a second voltage one or more times to form non-exposure periods that separate the exposure periods from each other, and start time of each of the exposure periods is periodic over the consecutive frame periods.

    Imaging device including an imaging cell having variable sensitivity
    6.
    发明授权
    Imaging device including an imaging cell having variable sensitivity 有权

    公开(公告)号：US11025847B2

    公开(公告)日：2021-06-01

    申请号：US16703046

    申请日：2019-12-04

    申请人： Panasonic Intellectual Property Management Co., Ltd.

    发明人： Katsuya Nozawa ,  Yasuo Miyake

    IPC分类号： H04N5/374 ,  H04N5/3745 ,  H04N5/355 ,  G01S17/36 ,  G01S17/894 ,  H01L27/144 ,  H01L27/146 ,  H04N5/225 ,  H04N5/351 ,  H04N5/369 ,  H04N5/378

    摘要： An imaging device including a first imaging cell having a variable sensitivity; and a first sensitivity control line electrically connected to the first imaging cell, where the first imaging cell comprises a photoelectron conversion area that generates a signal charge by incidence of light, and a signal detection circuit that detects the signal charge. The photoelectron conversion area includes a first electrode, a translucent second electrode connected to the first sensitivity control line, and a photoelectric conversion layer disposed between the first electrode and the second electrode, and during an exposure period from a reset of the first imaging cell until a readout of the signal charge accumulated in the first imaging cell by exposure, the first sensitivity control line supplies to the first imaging cell a first sensitivity control signal having a waveform expressed by a first function.

    Imaging device and camera system, and driving method of imaging device
    7.
    发明授权
    Imaging device and camera system, and driving method of imaging device 有权

    公开(公告)号：US10957725B2

    公开(公告)日：2021-03-23

    申请号：US16907742

    申请日：2020-06-22

    申请人： PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

    发明人： Masashi Murakami ,  Kazuko Nishimura ,  Yasuo Miyake ,  Yasunori Inoue

    IPC分类号： H01L27/146 ,  H01L27/142 ,  H01L31/14 ,  H04N5/3745 ,  H04N5/374 ,  H04N5/355

    摘要： An imaging device includes: a photoelectric converter including first and second electrodes, and a photoelectric conversion layer located between the first electrode and the second electrode; a voltage supply circuit applying a bias voltage between the first electrode and the second electrode: an amplifier transistor including a gate electrically connected to the second electrode, the amplifier transistor configured to output a signal corresponding to a potential of the second electrode; and a detection circuit configured to detect a level of the signal from the amplifier transistor. The voltage supply circuit applies the bias voltage in a first voltage range when the level detected by the detection circuit is greater than or equal to a first threshold value, and applies the bias voltage in a second voltage range that is greater than the first voltage range when the level detected by the detection circuit is less than a second threshold value.

    Imaging device
    8.
    发明授权
    Imaging device 有权

    公开(公告)号：US10542230B2

    公开(公告)日：2020-01-21

    申请号：US16203166

    申请日：2018-11-28

    申请人： PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

    发明人： Hidenari Kanehara ,  Yasuo Miyake ,  Sanshiro Shishido

    IPC分类号： H04N3/14 ,  H04N5/335 ,  H04N5/3745 ,  H01L27/146 ,  H04N5/378 ,  H04N5/374 ,  H04N5/376

    摘要： An imaging device having pixels in a row which include: first pixel including a first photoelectric converter and a first transistor having a first control terminal; second pixel including a second photoelectric converter and a second transistor having a second control terminal; third pixel including a third photoelectric converter and a third transistor having a third control terminal; and fourth pixel including a fourth photoelectric converter and a fourth transistor having a fourth control terminal. The device further including input signal line, a signal for controlling the first to fourth transistors input to the signal line; first buffer circuit having a first input terminal coupled to the signal line, and a first output terminal coupled to the first and second control terminals; and second buffer circuit having a second input terminal coupled to the signal line and a second output terminal coupled to the second and third control terminals.

    Imaging device and imaging system
    9.
    发明授权
    Imaging device and imaging system 有权

    公开(公告)号：US11723225B2

    公开(公告)日：2023-08-08

    申请号：US18066675

    申请日：2022-12-15

    申请人： Panasonic Intellectual Property Management Co., Ltd.

    发明人： Takeyoshi Tokuhara ,  Sanshiro Shishido ,  Yasuo Miyake ,  Shinichi Machida

    IPC分类号： H10K39/32 ,  H01L27/146

    CPC分类号： H10K39/32 ,  H01L27/146 ,  H01L27/14669

    摘要： An imaging device including a semiconductor substrate including a first surface that receives light from outside, and a second surface opposite to the first surface; a first transistor located on the second surface; and a photoelectric converter that faces the second surface and that receives light transmitted through the semiconductor substrate. The semiconductor substrate is a silicon substrate or a silicon compound substrate, and the photoelectric converter includes a first electrode electrically connected to the first transistor, a second electrode, and a photoelectric conversion layer that is located between the first electrode and the second electrode and that contains a material which absorbs light having a first wavelength longer than or equal to 1.1 μm, and the material has a quantum nanostructure.