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64 条记录 (耗时 0.024 秒)

    Magnetic recording sensor with AFM exchange coupled shield stabilization
    41.
    发明授权
    Magnetic recording sensor with AFM exchange coupled shield stabilization 有权
    磁记录传感器与AFM交换屏蔽稳定

    公开(公告)号：US08797692B1

    公开(公告)日：2014-08-05

    申请号：US13607593

    申请日：2012-09-07

    申请人： Yimin Guo ,  Rongfu Xiao ,  Yuankai Zheng

    发明人： Yimin Guo ,  Rongfu Xiao ,  Yuankai Zheng

    IPC分类号： G11B5/11 ,  G11B5/39

    CPC分类号： G11B5/3912 ,  B82Y10/00 ,  G11B5/3909 ,  G11B2005/3996

    摘要： A magnetic recording sensor with AFM exchange coupled shield stabilization for use in a data storage device includes a read sensor positioned between a bottom shield and a top shield. The top shield comprises a first ferromagnetic (FM) layer, a coupling layer, and a second FM layer. An exchange coupling insertion layer is provided between the second FM layer and an antiferromagnetic (AFM) layer above. In an embodiment of the invention, the exchange coupling insertion layer comprises CoFe with a Fe content from about 35-45 at. %, and thickness from about 1 nm to about 3 nm. In another embodiment of the invention, the exchange coupling insertion layer comprises a bi-layer, including first sub-layer comprising CoFe with Fe content from about 8-12 at. %, and second sub-layer comprising CoFe with Fe content from about 35-45 at. %, and the bi-layer has a thickness less than about 4 nm.

    摘要翻译： 具有用于数据存储设备的AFM交换耦合屏蔽稳定性的磁记录传感器包括位于底屏蔽和顶屏蔽之间的读取传感器。 顶部屏蔽包括第一铁磁（FM）层，耦合层和第二FM层。 在第二FM层和上面的反铁磁（AFM）层之间提供交换耦合插入层。 在本发明的一个实施方案中，交换耦合插入层包含Fe含量约35-45at。 ％，厚度约1nm至约3nm。 在本发明的另一实施例中，交换耦合插入层包括双层，包括第一子层，其包含Fe含量约为8-12at。 ％，并且包含Fe含量为约35-45at。的CoFe的第二子层。 ％，双层具有小于约4nm的厚度。

    Field angle sensor fabricated using reactive ion etching
    44.
    发明授权
    Field angle sensor fabricated using reactive ion etching 有权
    使用反应离子蚀刻制造的场角传感器

    公开(公告)号：US07713755B1

    公开(公告)日：2010-05-11

    申请号：US12316501

    申请日：2008-12-11

    申请人： Rongfu Xiao ,  Ruth Tong ,  Witold Kula ,  Chyu-Jiuh Torng

    发明人： Rongfu Xiao ,  Ruth Tong ,  Witold Kula ,  Chyu-Jiuh Torng

    IPC分类号： H01L21/00

    CPC分类号： H01L43/12

    摘要： A high-amplitude magnetic angle sensor is described along with a process for its manufacture. A thin tantalum nitride hard mask, used to pattern the device, is left in place within the completed structure but, by first converting most of it to tantalum oxide, its effect on current shunting is greatly reduced.

    摘要翻译： 描述了高振幅磁角传感器及其制造方法。 用于将器件图案化的薄氮化钽硬掩模在完成的结构内留在原位，但是通过首先将其大部分转换为氧化钽，其对电流分流的影响大大降低。

    Method of MRAM fabrication with zero electrical shorting
    45.
    发明申请
    Method of MRAM fabrication with zero electrical shorting 有权
    零电气短路的MRAM制造方法

    公开(公告)号：US20090173977A1

    公开(公告)日：2009-07-09

    申请号：US12006889

    申请日：2008-01-07

    申请人： Rongfu Xiao ,  Chyu-Jiuh Torng ,  Tom Zhong ,  Witold Kula

    发明人： Rongfu Xiao ,  Chyu-Jiuh Torng ,  Tom Zhong ,  Witold Kula

    IPC分类号： H01L43/00 ,  H01L29/82 ,  H01L43/12 ,  H01L21/467

    CPC分类号： H01L43/12 ,  H01L43/08

    摘要： An MTJ cell without footings and free from electrical short-circuits across a tunneling barrier layer is formed by using a Ta hard mask layer and a combination of etches. A first etch patterns the Ta hard mask, while a second etch uses O2 applied in a single high power process at two successive different power levels. A first power level of between approximately 200 W and 500 W removes BARC, photoresist and Ta residue from the first etch, the second power level, between approximately 400 W and 600 W continues an etch of the stack layers and forms a protective oxide around the etched sides of the stack. Finally, an etch using a carbon, hydrogen and oxygen gas completes the etch while the oxide layer protects the cell from short-circuits across the lateral edges of the barrier layer.

    摘要翻译： 通过使用Ta硬掩模层和蚀刻的组合，形成没有底脚并且穿过隧道势垒层的电短路的MTJ电池。 第一蚀刻图案Ta硬掩模，而第二蚀刻使用在两个连续的不同功率水平下在单个高功率过程中施加的O2。 在大约200W至500W之间的第一功率电平从第一蚀刻去除BARC，光致抗蚀剂和Ta残留物，第二功率电平在大约400W至600W之间，继续蚀刻叠层，并在其周围形成保护氧化物 蚀刻边的堆叠。 最后，使用碳，氢和氧气的蚀刻完成了蚀刻，而氧化物层保护电池免受横跨阻挡层的侧边缘的短路。

    Method of effective memorization
    46.
    发明申请
    Method of effective memorization 审中-公开
    有效记忆的方法

    公开(公告)号：US20080140596A1

    公开(公告)日：2008-06-12

    申请号：US11955657

    申请日：2007-12-13

    申请人： Rongfu Xiao

    发明人： Rongfu Xiao

    IPC分类号： G06N3/02

    CPC分类号： G06N3/0418

    摘要： This invention is about a method to enhance memory retention and its application to language learning and other learning processes that require memorization of old content learned in an earlier time. The method uses a memory retention function R˜t(d-D) to iteratively calculate when next review (or repeat) is needed before the previously learned content is likely forgotten, where the R is percentage (%) of memory retention after a time span t, and d is a parameter relating to fractal dimension of the activated neurons participating in the learning process in human brain. This invention provides an effective way for students to learn a new language or to memorize new thing learned previously.

    摘要翻译： 本发明涉及一种增强记忆保持性的方法及其在语言学习和其他学习过程中的应用，这些过程需要记忆早期学习的旧内容。 该方法使用记忆保留函数R〜t（DD）来迭代地计算在先前学习的内容可能被遗忘之前需要下一次审查（或重复）时，其中R是百分比（％） 在时间跨度t之后的记忆保留，d是参与人脑中学习过程的激活的神经元的分形维数的参数。 本发明为学生学习新语言或者记住以前学到的新事物提供了一种有效途径。

    Polarization independent magnetooptic switches
    47.
    发明授权
    Polarization independent magnetooptic switches 失效
    极化独立磁光开关

    公开(公告)号：US06795245B2

    公开(公告)日：2004-09-21

    申请号：US09995391

    申请日：2001-11-26

    申请人： Rongfu Xiao

    发明人： Rongfu Xiao

    IPC分类号： G02B2728

    CPC分类号： G02F1/313 ,  G02F1/09

    摘要： This invention provides polarization independent magnetooptic switches. Input optical signals are switched to different output ports via polarization manipulation utilizing magnetically switchable Faraday rotators, polarization beam splitters (PBS) and polarization beam combiners (PBC). The Faraday rotators are Bi-substituted magnetic garnet with small coercivity, and PBS/PBC made from birefringence crystals. The switching Faraday rotator is mounted inside a soft magnetic ferrite core, which is magnetized by an electric coil outside. To ensure a high switching speed, the selected ferrite core exhibits high frequency characteristic. Based on the same principle of polarization manipulation, a latching magnetooptic switch (only a current pulse is required) can be built using a latchable Faraday rotator as a switching control unit. The advantages of these magnetooptic switches are high speed (˜&mgr;s or faster), low insertion loss, low PDL and PMD, compactness in size, no moving parts and no liquid in the device.

    摘要翻译： 本发明提供了与偏振无关的光电开关。 输入光信号通过使用可旋转的法拉第旋转器，偏振分束器（PBS）和偏振束组合器（PBC）的偏振操作切换到不同的输出端口。 法拉第旋转器是具有小矫顽力的双取代磁性石榴石，并且由双折射晶体制成的PBS / PBC。 开关法拉第旋转器安装在软磁铁氧体磁芯内，电磁线圈外侧磁化。 为了确保高切换速度，所选择的铁氧体磁芯具有高频特性。 基于偏振操作的相同原理，可以使用可锁定的法拉第旋转器作为开关控制单元来构建锁存磁光开关（仅需要电流脉冲）。 这些磁光开关的优点是高速（〜少或更快），低插入损耗，低PDL和PMD，尺寸紧凑，无移动部件，无液体。

    Magnetoresistive element having an adjacent-bias layer and a toggle writing scheme
    50.
    发明授权
    Magnetoresistive element having an adjacent-bias layer and a toggle writing scheme 有权

    公开(公告)号：US11444239B1

    公开(公告)日：2022-09-13

    申请号：US17187864

    申请日：2021-02-28

    申请人： Yimin Guo ,  Rongfu Xiao ,  Jun Chen

    发明人： Yimin Guo ,  Rongfu Xiao ,  Jun Chen

    IPC分类号： G11C11/00 ,  H01L43/02 ,  H01L27/22 ,  G11C11/16 ,  H01L43/10

    摘要： A magnetoresistive element using combined spin-transfer-torque controlled magnetic bias and VCMA effects comprising a free layer and an adjacent-bias layer separated by a nonmagnetic spacing layer, wherein the free layer has an interfacial perpendicular magnetic anisotropy and a variable magnetization direction substantially perpendicular to a film surface, the adjacent-bias layer has a perpendicular magnetic anisotropy and a variable magnetization direction substantially perpendicular to a film surface, and the perpendicular anisotropy of the free layer is sufficiently higher than that of the adjacent-bias layer such that the critical switching current to reverse the free layer magnetization direction is at least 3 times as high as the critical switching current to reverse the adjacent-bias layer magnetization direction. Further, there is provided a toggle writing method of the perpendicular magnetoresistive element comprises: applying a first write pulse having a first voltage magnitude and a first pulse width to reverse the adjacent-bias layer magnetization direction to be anti-parallel to the free layer magnetization direction by spin-transfer-torque effect, and applying a second write pulse having a second voltage magnitude and a second pulse width to reverse the free layer magnetization direction to be parallel to the adjacent-bias layer magnetization direction by voltage-controlled magnetic anisotropy effect under the magnetic dipole bias field from the adjacent-bias layer.