公开(公告)号：US20180293130A1

公开(公告)日：2018-10-11

申请号：US15907210

申请日：2018-02-27

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Brent S. Haukness ,  John Eric Linstadt ,  Scott C. Best

IPC: G06F11/10 ,  G11C29/44 ,  G11C29/42 ,  G11C5/04 ,  G11C29/04

CPC classification number: G06F11/1048 ,  G11C5/04 ,  G11C29/42 ,  G11C29/44 ,  G11C2029/0411 ,  G11C2029/4402

Abstract: A memory module is disclosed. The memory module includes a substrate, and respective first, second and third memory devices. The first memory device is of a first type disposed on the substrate and has addressable storage locations. The second memory device is also of the first type, and includes storage cells dedicated to store failure address information associated with defective storage locations in the first memory device. The third memory device is of the first type and includes storage cells dedicated to substitute as storage locations for the defective storage locations.

公开(公告)号：US20130148437A1

公开(公告)日：2013-06-13

申请号：US13726042

申请日：2012-12-22

Applicant: Rambus Inc.

Inventor： Gary B. Bronner ,  Brent S. Haukness ,  Mark A. Horowitz ,  Mark D. Kellam ,  Fariborz Assaderaghi

IPC: G11C16/06

CPC classification number: G11C16/26 ,  G11C7/04 ,  G11C13/0002 ,  G11C13/0033 ,  G11C13/0035 ,  G11C16/06 ,  H01L21/324

Abstract: In response to detecting an event during operation of an integrated-circuit memory device containing charge-storing memory cells, an electric current is enabled to flow through a word line coupled to the charge-storing memory cells for a brief interval to heat the charge-storing memory cells to an annealing temperature range.

Abstract translation: 响应于在包含电荷存储存储单元的集成电路存储器件的操作期间检测到事件，电流能够短暂地流过耦合到电荷存储存储单元的字线，以加热电荷存储单元， 将存储单元存储到退火温度范围。