摘要:
An image signal processor for reducing power consumption. The image signal processor is connected between a solid-state imaging device, which generates a first image signal, and an external device, and includes first and second regulators, a switch circuit, a signal processing circuit, and an output circuit. The first regulator generates a first voltage that is in accordance with an output level of the solid-state imaging device. The second regulator generates a second voltage that is in accordance with an input level of the external device. The switch circuit supplies the power supply voltage or the second voltage to the output circuit in accordance with the operating state of the imaging external device. The signal processing circuit operates with the first voltage and generates a second image signal. The output circuit provides the second image signal to the external device.
摘要:
A deficiency candidate detection circuit detects a deficient pixel candidate by comparing the image signal of a target pixel with the image signals of peripheral pixels, and address information of the deficient pixel candidate is stored in a position memory circuit. A deficiency determining circuit repeats the determination of a deficient pixel a number of times based on the address information stored in the position memory circuit, and determines address information of a deficient pixel from the continuity of the determination results. A deficiency registering circuit registers the determined address information in the position memory circuit. A deficiency correction circuit corrects the image signal of the deficient pixel according to the registered address information of the deficient pixel.
摘要:
A deficiency candidate detection circuit detects a deficient pixel candidate by comparing the image signal of a target pixel with the image signals of peripheral pixels, and address information of the deficient pixel candidate is stored in a position memory circuit. A deficiency determining circuit repeats the determination of a deficient pixel a number of times based on the address information stored in the position memory circuit, and determines address information of a deficient pixel from the continuity of the determination results. A deficiency registering circuit registers the determined address information in the position memory circuit. A deficiency correction circuit corrects the image signal of the deficient pixel according to the registered address information of the deficient pixel.
摘要:
A deficiency candidate detection circuit detects a deficient pixel candidate by comparing the image signal of a target pixel with the image signals of peripheral pixels, and address information of the deficient pixel candidate is stored in a position memory circuit. A deficiency determining circuit repeats the determination of a deficient pixel a number of times based on the address information stored in the position memory circuit, and determines address information of a deficient pixel from the continuity of the determination results. A deficiency registering circuit registers the determined address information in the position memory circuit. A deficiency correction circuit corrects the image signal of the deficient pixel according to the registered address information of the deficient pixel.
摘要:
A first processing circuit subjects image data output from an A/D converter circuit to a first signal process to produce first image data. A second processing circuit subjects image data to a second signal process, which is independent of the first signal process, to produce second image data. The first and second processing circuits execute the first and second signal processes in a parallel manner to output the first and second image data to a display device and a system microcomputer.
摘要:
A method and apparatus for driving a solid state image sensor are disclosed. The method and apparatus operate such that the amount of information charges remaining in channel regions at the time of transferring the information charge packets from the channel regions is significantly reduced. The solid state image sensor being driven has a semiconductor substrate, at least one layer of which is located over the semiconductor substrate and where channel regions are formed, and gate electrodes are formed over the semiconductor substrate to respectively cover the channel regions. Drain regions are also defined in the semiconductor substrate respectively adjacent to the channel regions in either a lateral direction or a vertical direction. Each channel region is capable of storing information charges. The driving device for the described solid state image sensor includes: a first control voltage generator for applying a first control voltage to one of the gate electrodes in a predetermined period to form a potential well in at least one of the channel regions; and a second control voltage generator for applying a second control voltage to the semiconductor substrate defining the drain regions in the predetermined period so as to set the potential barrier lower than the preset height in order to temporarily restrict an amount of the information charges to be stored in the potential well.
摘要:
The invention is intended to provide a highly integrated solid-state image pickup device, in which the number of transfer electrodes of a horizontal shift register is reduced, and a plurality of vertical shifter registers are arranged with a reduced pitch therebetween. Output-control gate electrodes are disposed at an output end of the vertical shift registers. These output-control gate electrodes are operated independently from vertical transfer gate electrodes, and temporarily reserve information charges. Horizontal transfer gate electrodes corresponding to the vertical shift registers on odd-numbered columns are turned on, so signals charges in these vertical shift registers are read into a horizontal shift register. During horizontal transfer of these information charges, information charges of vertical shift registers on even-numbered columns are reserved, for half of a horizontal scanning period, in output ends of the vertical shift registers by the output-control gate electrodes. Thereafter, the information charges in the vertical shift registers on the even-numbered columns are read into the horizontal shift register, and are horizontally transferred. Since one horizontal transfer operation requires half of the pixels per row, the horizontal shift regiter includes two transfer electrodes for each vertical shift register.
摘要:
A solid-state color image pickup device which is capable of simplifying signal processing with respect to picture signals. A color filter mounted on the solid-state image pickup device is composed of first to fourth filter elements E1 to E4. The sum E1+E2 of the signals of color components obtained by adding the color components of the first filter element E1 and the second filter element E2 which are disposed in an odd-numbered row is equal to the sum E3+E4 of the signal of color components obtained by adding the color components of the third filter element E3 and the fourth filter element E4 which are disposed in an even-numbered row. A brightness signal having color components in a predetermined ratio is obtained for each of E1+E2, and E3+E4. A color component signal representing one of the three primary colors (R, G, B) of light is represented by the difference between the color component signals of the first filter element E1 and the second filter element E2, and the difference between the color component signals of the third filter element E3 and the fourth filter element E4. Thus, signals necessary for producing a color image are obtained for each row of light-receiving picture elements.
摘要:
For input signals f0-f7, by the implementing of signal processing in several stages with bit-serial form, output signals f0-f7 are obtained. For input signals f0-f7, non-two's power approximation proportions of ideal values of fixed coefficient, i.e., cos[.pi.l(2K+1)/2N] are applied. This results in asymmetrical hardware to implement a forward transform mode and an inverse transform mode. Therefore, by adding a circuit element which is employed for a forward transform mode, and by adding a circuit element which is employed for an inverse transform mode, hardware which can deal with both of forward transform and inverse transform is realized.
摘要:
A workpiece such as a semiconductor wafer is positioned between a turntable and a top ring and polished by an abrasive cloth on the turntable while the top ring is being pressed against the turntable. The top ring has a retaining ring for preventing the workpiece from deviating from the lower surface of the top ring, and the retaining ring has an inside diameter larger than an outside diameter of the workpiece. The rotation of the turntable imparts a pressing force in a direction parallel to the upper surface of the turntable to the workpiece so that an outer periphery of the workpiece contacts an inner periphery of the retaining ring, and the rotation of the retaining ring imparts a rotational force to the workpiece so that the workpiece performs a planetary motion relative to the top ring in the retaining ring.