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48 条记录 (耗时 0.026 秒)

    Semiconductor light emitting device with carrier diffusion suppressing layer
    42.
    发明授权
    Semiconductor light emitting device with carrier diffusion suppressing layer 失效
    具有载流子扩散抑制层的半导体发光器件

    公开(公告)号：US6084251A

    公开(公告)日：2000-07-04

    申请号：US14683

    申请日：1998-01-28

    申请人： Koshi Tamamura ,  Takayuki Kawasumi ,  Shoji Hirata

    发明人： Koshi Tamamura ,  Takayuki Kawasumi ,  Shoji Hirata

    IPC分类号： H01L33/06 ,  H01L33/12 ,  H01L33/30 ,  H01S5/00 ,  H01S5/32 ,  H01S5/343 ,  H01L33/00 ,  H01S3/18 ,  H01S3/19

    CPC分类号： H01L33/30 ,  B82Y20/00 ,  H01L33/0062 ,  H01S5/34326 ,  H01S2304/04 ,  H01S5/3211 ,  H01S5/3216

    摘要： Disclosed is a semiconductor light emitting device improved in static characteristics such as operational current and prolonged in service life. On an n-type GaAs substrate are sequentially grown an n-type GaAs buffer layer having a thickness of 0.3 .mu.m; an n-type AlGaInP cladding layer having a thickness of 1 .mu.m; and an active layer having a MQW structure of GaInP/AlGaInP. Then, a carrier diffusion suppressing layer having a thickness of 50 nm is grown on the active layer at a reduced V/III ratio. On the carrier diffusion suppressing layer are sequentially grown a p-type AlGaInP cladding layer having a thickness of 1 .mu.m; a p-type GaInP layer having a thickness of 0.1 .mu.m; and a p-type GaAs current cap layer having a thickness of 0.3 .mu.m. Then, the p-type AlGaInP cladding layer, p-type GaInP layer, and p-type GaAs current cap layer are selectively etched by typically photolithography, to form a mesa structure, and an n-type GaAs current cap layer is grown to be laminated on both sides of the mesa structure, to form a semiconductor light emitting device.

    摘要翻译： 公开了一种改进了诸如工作电流等静态特性和使用寿命延长的半导体发光器件。 在n型GaAs衬底上依次生长厚度为0.3μm的n型GaAs缓冲层; 厚度为1μm的n型AlGaInP包覆层; 以及具有GaInP / AlGaInP的MQW结构的有源层。 然后，在活性层上以减小的V / III比生长厚度为50nm的载流子扩散抑制层。 在载流子扩散抑制层上依次生长厚度为1μm的p型AlGaInP包覆层; 厚度为0.1μm的p型GaInP层; 以及厚度为0.3μm的p型GaAs电流帽层。 然后，通过典型的光刻法选择性地蚀刻p型AlGaInP包层，p型GaInP层和p型GaAs电流帽层，以形成台面结构，并且生长n型GaAs电流帽层为 层压在台面结构的两侧，以形成半导体发光器件。

    Self-pulsating semiconductor laser
    43.
    发明授权
    Self-pulsating semiconductor laser 失效
    自脉冲半导体激光器

    公开(公告)号：US5966397A

    公开(公告)日：1999-10-12

    申请号：US972768

    申请日：1997-11-18

    申请人： Shoji Hirata

    发明人： Shoji Hirata

    IPC分类号： H01S5/00 ,  H01S5/065 ,  H01S5/20 ,  H01S5/223 ,  H01S3/19

    CPC分类号： H01S5/2231 ,  H01S5/0658 ,  H01S5/20 ,  H01S5/204 ,  H01S5/205

    摘要： A semiconductor laser includes an n-type GaAs current blocking layer formed at both sides of a stripe portion made of an upper-lying portion of a p-type AlGaInP cladding layer, p-type GaInP intermediate layer and p-type GaAs cap layer to form a current blocking structure, and the p-type AlGaInP cladding layer has a thickness d.sub.1 at both sides of the stripe portion and a thickness d.sub.2 outside them (0

    摘要翻译： 半导体激光器包括形成在由p型AlGaInP包层的上部部分形成的条纹部分的两侧的n型GaAs电流阻挡层，p型GaInP中间层和p型GaAs覆盖层， 形成电流阻挡结构，并且p型AlGaInP包层在条形部分的两侧具有厚度d1，在其外侧具有厚度d2（0

    Semiconductor laser device
    46.
    发明授权
    Semiconductor laser device 失效

    公开(公告)号：US4888784A

    公开(公告)日：1989-12-19

    申请号：US182492

    申请日：1988-04-18

    申请人： Shoji Hirata

    发明人： Shoji Hirata

    IPC分类号： H01S5/00 ,  H01S5/12 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323

    CPC分类号： H01S5/22 ,  H01S5/2231 ,  H01S5/12 ,  H01S5/32316

    摘要： A semiconductor laser device including a first semiconductor layer having a strip waveguide structure to obtain optical confinement and a second semiconductor layer having a ridge waveguide structure for defining an electrical current passage region. The strip waveguide structure has a first width, and projects on the first semiconductor layer, extending over the central area of the layer in a longitudinal direction. The ridge waveguide structure projects on the second semiconductor layer and extends in the longitudinal direction with a second width which corresponds to the strip structure. The strip waveguide structure cooperates with the ridge waveguide structure to produce a difference between the refractive index of a center region which extends in the longitudinal direction of the second semiconductor and that of a neighboring region due to the difference in thicknesses between the two, so that the center region serves as an optical waveguide.

    Distributed feedback semiconductor laser
    47.
    发明授权
    Distributed feedback semiconductor laser 失效
    分布式反馈半导体激光器

    公开(公告)号：US4833687A

    公开(公告)日：1989-05-23

    申请号：US942269

    申请日：1986-12-16

    申请人： Shoji Hirata

    发明人： Shoji Hirata

    IPC分类号： H01S5/00 ,  H01S5/10 ,  H01S5/12 ,  H01S5/40

    CPC分类号： H01S5/12 ,  H01S5/10 ,  H01S5/1243 ,  H01S5/4056

    摘要： A distributed feedback semiconductor laser is provided with an optical waveguide having first and second straight-bar portions and a bending portion. The pitch of the grating in the case of light passing through the bending portion is a little longer than that in the case of light passing through the first and second straight-bar portion in order to shift the phase of the light transmitted along the optical waveguide by .lambda./4 where .lambda. is the oscillation wavelength, thereby generating single longitudinal mode laser light.

    摘要翻译： 分布反馈半导体激光器设置有具有第一和第二直杆部分和弯曲部分的光波导。 在通过弯曲部分的光的情况下，光栅的间距比通过第一和第二直杆部分的光的情况稍长，以便沿着光波导传输的光的相位移动 通过λ/ 4，其中λ是振荡波长，从而产生单纵模激光。

    Method of manufacturing a distributed feedback type semiconductor device
    48.
    发明授权
    Method of manufacturing a distributed feedback type semiconductor device 失效
    制造分布式反馈型半导体器件的方法

    公开(公告)号：US4716132A

    公开(公告)日：1987-12-29

    申请号：US2972

    申请日：1987-01-13

    申请人： Shoji Hirata

    发明人： Shoji Hirata

    IPC分类号： H01S5/00 ,  H01S5/12 ,  H01L21/208

    CPC分类号： H01S5/12

    摘要： A method of manufacturing a distributed feedback type semiconductor laser comprises a first cladding layer, an active layer disposed on the first cladding layer, a guiding layer disposed on the active layer and a second cladding layer disposed on the guiding layer respectively, in which a grating is disposed on the guiding layer, wherein the method comprises, a step of forming a predetermined material layer on the guiding layer, a step of selectively etching the material layer and the guiding layer until the guiding layer is at least partially exposed thereby forming undulation substantially in a trigonal waveform to the surface of the material layer and the guiding layer, and a step of forming the second cladding layer so as to cover the unevenness. A distributed feedback type semiconductor laser having a grating with an intense coupling the light can be manufactured easily and at a good reproducibility.

    摘要翻译： 一种分布式反射型半导体激光器的制造方法包括：第一包层，设置在第一包层上的有源层，设置在有源层上的引导层和分别设置在引导层上的第二包层， 所述方法包括：在所述引导层上形成预定材料层的步骤，选择性地蚀刻所述材料层和所述引导层的步骤，直到所述引导层至少部分地露出，从而基本上形成起伏 在与材料层和引导层的表面呈三角波形，以及形成第二覆层以覆盖凹凸的步骤。 可以容易地并且以良好的再现性制造具有与光强耦合的光栅的分布式反馈型半导体激光器。