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    Quantum dot device and electronic device
    41.
    发明授权
    Quantum dot device and electronic device 有权

    公开(公告)号：US10991899B2

    公开(公告)日：2021-04-27

    申请号：US16561474

    申请日：2019-09-05

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sung Woo Kim ,  Kun Su Park ,  Dae Young Chung ,  Eun Joo Jang

    IPC: H01L51/50 ,  H01L51/00 ,  H01L51/56

    Abstract: A quantum dot device including an anode and a cathode facing each other; a quantum dot layer between the anode and the cathode; a hole transport layer between the anode and the quantum dot layer, the hole transport layer being configured to increase a hole transporting property from the anode to the quantum dot layer; an inorganic electron transport layer between the cathode and the quantum dot layer, the inorganic electron transport layer being configured to increase an electron transporting property from the cathode to the quantum dot layer; and an inorganic electron controlling layer between the cathode and the quantum dot layer, the inorganic electron controlling layer being configured to decrease an electron transporting property from the cathode to the quantum dot layer, and an electronic device including the same.

    Device with quantum dot emissive layer and display device comprising the same
    42.
    发明授权
    Device with quantum dot emissive layer and display device comprising the same 有权

    公开(公告)号：US10978660B2

    公开(公告)日：2021-04-13

    申请号：US16797380

    申请日：2020-02-21

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Dae Young Chung ,  Eun Joo Jang ,  Oul Cho ,  Hyun A Kang ,  Tae Hyung Kim ,  Yun Sung Woo ,  Jeong Hee Lee

    IPC: H01L51/50 ,  H01L51/52

    Abstract: An electronic device includes a first electrode and a second electrode facing each other, an emission layer comprising a plurality of quantum dots, wherein the emission layer is disposed between the first electrode and the second electrode; a first charge auxiliary layer disposed between the first electrode and the emission layer; and an optical functional layer disposed on the second electrode on a side opposite the emission layer, wherein the first electrode includes a reflecting electrode, wherein the second electrode is a light-transmitting electrode, wherein a region between the optical functional layer and the first electrode comprises a microcavity structure, and a refractive index of the optical functional layer is greater than or equal to a refractive index of the second electrode.

    Semiconductor nanocrystal particles and devices including the same
    43.
    发明授权
    Semiconductor nanocrystal particles and devices including the same 有权

    公开(公告)号：US10975299B2

    公开(公告)日：2021-04-13

    申请号：US16103182

    申请日：2018-08-14

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Tae Hyung Kim ,  Hyun A Kang ,  Eun Joo Jang ,  Dae Young Chung

    IPC: H01L51/50 ,  C09K11/70 ,  B82Y20/00 ,  B82Y40/00

    Abstract: Disclosed are a semiconductor nanocrystal particle including indium (In), zinc (Zn), and phosphorus (P), wherein a mole ratio of the zinc relative to the indium is greater than or equal to about 25:1, and the semiconductor nanocrystal particle includes a core including a first semiconductor material including indium, zinc, and phosphorus and a shell disposed on the core and including a second semiconductor material including zinc and sulfur, a method of producing the same, and an electronic device including the same. The semiconductor nanocrystal particle emits blue light having a maximum peak emission at a wavelength of less than or equal to about 470 nanometers.

    Quantum dot light emitting device with electron auxiliary layer and display device including the same
    44.
    发明授权
    Quantum dot light emitting device with electron auxiliary layer and display device including the same 有权

    公开(公告)号：US12193252B2

    公开(公告)日：2025-01-07

    申请号：US18300665

    申请日：2023-04-14

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Heejae Lee ,  Sung Woo Kim ,  Eun Joo Jang ,  Dae Young Chung ,  Moon Gyu Han

    IPC: H10K50/16 ,  H10K50/115 ,  H10K50/15 ,  H10K50/17

    Abstract: A light emitting device includes: a first electrode and a second electrode with a surface facing the first electrode; an emission layer disposed between the first electrode and the second electrode and including a quantum dot (e.g., a plurality of quantum dots); and an electron auxiliary layer disposed between the emission layer and the second electrode. The electron auxiliary layer includes a first layer including a first metal oxide, and a second layer disposed on the first layer and including a second metal oxide. A roughness of an interface between the second layer and the second electrode is less than about 10 nm as determined by an electron microscopy analysis. An absolute value of a difference between a conduction band edge energy level of the second layer and a work function of the second electrode may be less than or equal to about 0.5 eV, and a conduction band edge energy level of the first layer may be less than the conduction band edge energy level of the second layer.

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