公开(公告)号：US09826871B2

公开(公告)日：2017-11-28

申请号：US14717271

申请日：2015-05-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hwi Chan Jang ,  Dong Won Kim ,  Hyun Soo Jung ,  Jun Hwa Lee

IPC: A47L9/20 ,  A47L11/33 ,  A47L11/40 ,  A47L9/14

CPC classification number: A47L11/33 ,  A47L9/1463 ,  A47L9/149 ,  A47L11/4025 ,  A47L11/4072 ,  A47L2201/00 ,  A47L2201/024

Abstract: A robot cleaner provided with a shutter to open or close an inlet of a dust box when the dust box is separated from a body of the robot cleaner. Another robot cleaner, which docks with an automatic exhaust station, is also disclosed, together with the automatic exhaust station. The latter robot cleaner includes a shutter to be automatically opened by air discharged from the automatic exhaust station in a docked state of the robot cleaner to exhaust dust from the dust box, in order to allow even heavy dust to be easily exhausted.

公开(公告)号：US12183800B2

公开(公告)日：2024-12-31

申请号：US18449734

申请日：2023-08-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myung Gil Kang ,  Dong Won Kim ,  Woo Seok Park ,  Keun Hwi Cho ,  Sung Gi Hur

IPC: H01L29/423 ,  H01L27/092 ,  H01L29/06 ,  H01L29/786

Abstract: Semiconductor devices include a first active pattern including a first lower pattern extending in a first direction and a first sheet pattern spaced apart from the first lower pattern; and a first gate electrode on the first lower pattern, the first gate electrode extending in a second direction and surrounding the first sheet pattern, wherein the first lower pattern includes a first sidewall and a second sidewall opposite to each other, each of the first sidewall of the first lower pattern and the second sidewall of the first lower pattern extends in the first direction, the first gate electrode overlaps the first sidewall of the first lower pattern in the second direction by a first depth, the first gate electrode overlaps the second sidewall of the first lower pattern in the second direction by a second depth, and the first depth is different from the second depth.

公开(公告)号：US20240421189A1

公开(公告)日：2024-12-19

申请号：US18596179

申请日：2024-03-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Beom Jin Park ,  Myung Gil Kang ,  Dong Won Kim ,  Chang Woo Noh ,  Yu Jin Jeon

IPC: H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

Abstract: The present disclosure relates to semiconductor devices. An example semiconductor device includes a substrate including first and second regions, a first bridge pattern extending in a first direction on the first region, a first gate structure extending in a second direction intersecting the first direction, first epitaxial patterns connected to the first bridge pattern on side surfaces of the first gate structure, first inner spacers interposed between the substrate and the first bridge pattern and between the first gate structure and the first epitaxial patterns, a second bridge pattern extending in the first direction on the second region, a second gate structure extending in the second direction, second epitaxial patterns connected to the second bridge pattern on side surfaces of the second gate structure, and second inner spacers interposed between the substrate and the second bridge pattern and between the second gate structure and the second epitaxial patterns.

公开(公告)号：US20240186392A1

公开(公告)日：2024-06-06

申请号：US18062116

申请日：2022-12-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Beom Jin PARK ,  Myung Gil Kang ,  Dong Won Kim ,  Keun Hwi Cho

IPC: H01L29/423 ,  H01L27/088 ,  H01L29/06 ,  H01L29/417 ,  H01L29/775

CPC classification number: H01L29/42392 ,  H01L27/088 ,  H01L29/0673 ,  H01L29/41775 ,  H01L29/775

Abstract: A semiconductor device including a substrate, a first and second active pattern extending in a first horizontal direction on the substrate, the second active pattern apart from the first active pattern in the first horizontal direction, first nanosheets apart from each other in a vertical direction on the first active pattern, second nanosheets apart from each other in the vertical direction on the first and second active patterns, a gate electrode extending in a second horizontal direction different from the first horizontal direction on the first active pattern and surrounding the first nanosheets, a source/drain region between the first and second nanosheets, an active cut penetrating the second nanosheets in the vertical direction, extending to the substrate, and separating the first and second active patterns, and a sacrificial layer between the source/drain region and the active cut, in contact with the active cut, and including silicon germanium may be provided.

公开(公告)号：US11843000B2

公开(公告)日：2023-12-12

申请号：US17336785

申请日：2021-06-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Beom Jin Park ,  Myung Gil Kang ,  Dong Won Kim ,  Keun Hwi Cho

IPC: H01L27/12 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/417 ,  H01L29/775 ,  H01L29/786 ,  H01L21/02 ,  H01L21/84 ,  H01L29/66

CPC classification number: H01L27/1203 ,  H01L21/02603 ,  H01L21/84 ,  H01L27/092 ,  H01L29/0673 ,  H01L29/41733 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/66742 ,  H01L29/775 ,  H01L29/78618 ,  H01L29/78696

Abstract: A semiconductor device that reduces the occurrence of a leakage current by forming a doped layer in each of an NMOS region and a PMOS region on an SOI substrate, and completely separating the doped layer of the NMOS region from the doped layer of the PMOS region using the element isolation layer is provided. The semiconductor device includes a first region and a second region adjacent to the first region, a substrate including a first layer, an insulating layer on the first layer, and a second layer on the insulating layer, a first doped layer on the second layer in the first region and including a first impurity, a second doped layer on the second layer in the second region and including a second impurity different from the first impurity, and an element isolation layer configured to separate the first doped layer from the second doped layer, and in contact with the insulating layer.

公开(公告)号：US11186940B2

公开(公告)日：2021-11-30

申请号：US15118471

申请日：2015-02-11

Applicant: Samsung Electronics Co., Ltd

Inventor： Dong Won Kim ,  Jin Doo Kim ,  Yeong Man Kim ,  Seung Youp Lee

IPC: D06F39/12 ,  D06F37/26 ,  D06F23/02

Abstract: Provided is a washing machine including: a cabinet including a plurality of side frames, a back frame, a top frame and a bottom frame; a front frame that is disposed in front of the cabinet and includes an internal laundry port through which laundry is put into a rotating tub, and a front cover that is disposed in front of the front frame, extends from the top frame to the bottom frame, includes an external laundry port corresponding to the internal laundry port and is integrally formed. Thus, no line is formed in a front side of the washing machine so that the exterior of the washing machine can be enhanced.

公开(公告)号：US11103115B2

公开(公告)日：2021-08-31

申请号：US15884982

申请日：2018-01-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byung Chan Kim ,  Sang Sik Yoon ,  Kyong Su Kim ,  Dong Won Kim ,  Jea Yun So ,  Yeon Kyu Jeong

IPC: A47L9/28 ,  G01S17/48 ,  G01S7/481 ,  A47L9/00 ,  G05D1/02 ,  G01S17/931

Abstract: A sensor module and a robot cleaner including the sensor module may provide accurate sensing of an obstacle and prevent an erroneous sensing of an obstacle. The robot cleaner may include a body including a cleaning unit to remove foreign substances from a surface of a floor, a cover to cover an upper portion of the body, a sensor module including an obstacle sensor mounted to sense an obstacle, and a sensor window provided at one side of the sensor module. The sensor module may include a light emitting device to emit light through the sensor window, a light receiving reflector on which light reflected from the obstacle is incident, and a light shielding portion interposed between the light emitting device and the light receiving reflector to block the light emitted from the light emitting device from being incident upon the light receiving reflector.

公开(公告)号：US10910374B2

公开(公告)日：2021-02-02

申请号：US16926360

申请日：2020-07-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Min Kim ,  Dong Won Kim

IPC: H01L27/088 ,  H01L29/78 ,  H01L29/10 ,  H01L21/8234 ,  H01L21/768 ,  H01L29/66

Abstract: A semiconductor device is provided, which includes a first and second multichannel active patterns spaced apart from one another and extending in a first direction. The semiconductor device also includes first and second gate structures on the first and second multichannel active patterns, extending in a second direction and including first and second gate insulating films, respectively. Sidewalls of the first multichannel active pattern include first portions in contact with the first gate insulating film, second portions not in contact with the first gate insulating film, third portions in contact with the second gate insulating film, and fourth portions not in contact with the second gate insulating film. Additionally, a height of the first portions of the first multichannel active pattern is greater than a height of the third portions of the first multichannel active pattern.

公开(公告)号：US10529712B2

公开(公告)日：2020-01-07

申请号：US15971483

申请日：2018-05-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Min Kim ,  Dong Won Kim

IPC: H01L29/06 ,  H01L27/088 ,  H01L23/528 ,  H01L27/02 ,  H01L29/08 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/417 ,  H01L21/762 ,  H01L23/485 ,  H01L21/02 ,  H01L21/027 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/311

Abstract: A semiconductor device includes a substrate, a fin structure protruding from the substrate in a direction perpendicular to an upper surface of the substrate, the fin structure including first fin regions extending in a first direction and second fin regions extending in a second direction different from the first direction, source/drain regions disposed on the fin structure, a gate structure intersecting the fin structure, a first contact connected to one of the source/drain regions, and a second contact connected to the gate structure and being between the second fin regions in plan view.

公开(公告)号：US10453839B2

公开(公告)日：2019-10-22

申请号：US16258833

申请日：2019-01-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Min Kim ,  Dong Won Kim ,  Geum Jong Bae

IPC: H01L27/088 ,  H01L27/02 ,  H01L21/8234 ,  H01L21/308 ,  H01L21/02 ,  H01L29/66

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a plurality of fins comprising a first fin, a second fin, a third fin, a fourth fin and a fifth fin, each of the plurality of protruding from the substrate in a first direction, and spaced apart from one another in a second direction that intersects the first direction and a plurality of trenches comprising a first trench, a second trench, a third trench and a fourth trench, each of the plurality of trenches being formed between adjacent fins of the plurality of fins, wherein variation of a first width of the first trench and a third width of the third trench is smaller than a first variation, wherein variation of a second width of the second trench and a fourth width of the fourth trench is smaller than a second variation, and wherein the second variation is greater than the first variation.