Circular polarization generating system for microwave oven
    41.
    发明授权
    Circular polarization generating system for microwave oven 有权
    微波炉圆偏振发生系统

    公开(公告)号:US6097018A

    公开(公告)日:2000-08-01

    申请号:US227055

    申请日:1999-01-07

    CPC classification number: H05B6/707 H05B6/704

    Abstract: A microwave oven includes a magnetron for generating electromagnetic wave energy, a waveguide for guiding and directing the electromagnetic wave energy into a cavity body defining a cooking chamber, and an antenna for radiating the electromagnetic wave energy generated by the magnetron into the waveguide. The waveguide includes a first opening for uniformly dispersing the electromagnetic wave energy into the cooking chamber, a second opening for uniformly dispersing the electromagnetic wave energy into the cooking chamber, and a short circuit for providing a short surface to the antenna. The first opening is formed on a portion of the waveguide which contacts the cavity body and extends along a longitudinal direction. The second opening is spaced away from and having a predetermined angle with respect to the first opening.

    Abstract translation: 微波炉包括用于产生电磁波能量的磁控管,用于将电磁波能量引导并引导到限定烹饪室的空腔体中的波导,以及用于将由磁控管产生的电磁波能量辐射到波导中的天线。 波导包括用于将电磁波能量均匀地分散到烹饪室中的第一开口,用于将电磁波能量均匀地分散到烹饪室中的第二开口,以及用于向天线提供短表面的短路。 第一开口形成在波导的与空腔体接触并沿纵向方向延伸的部分上。 第二开口相对于第一开口间隔开并具有预定的角度。

    Apparatus and method for generating a fully focused image by using a camera equipped with a multi-color filter aperture
    44.
    发明授权
    Apparatus and method for generating a fully focused image by using a camera equipped with a multi-color filter aperture 有权
    通过使用配备有多色滤光器孔径的相机来产生完全聚焦的图像的装置和方法

    公开(公告)号:US08836765B2

    公开(公告)日:2014-09-16

    申请号:US13290930

    申请日:2011-11-07

    CPC classification number: H04N9/045 H04N5/23212

    Abstract: Provided are an apparatus and method for generating a fully focused image. A depth map generation unit generates a depth map of an input image obtained by a multiple color filter aperture (MCA) camera. A channel shifting & alignment unit extractes subimages which include objects with same focal distance based on the depth map, and performing color channel alignment and removing out-of-focus blurs for each subimages obtained from the depth map. An image fusing unit fuses the subimages to generate a fully focused image.

    Abstract translation: 提供了一种用于产生完全聚焦图像的装置和方法。 深度图生成单元生成由多彩色滤光器孔径(MCA)照相机获得的输入图像的深度图。 频道切换和对准单元基于深度图提取包括具有相同焦距的对象的子图像,并且对于从深度图获得的每个子图像执行颜色通道对准和去除失焦模糊。 图像定影单元使子图像融合以产生完全聚焦的图像。

    Method of manufacturing ink-jet head
    45.
    发明授权
    Method of manufacturing ink-jet head 有权
    制造喷墨头的方法

    公开(公告)号:US08192640B2

    公开(公告)日:2012-06-05

    申请号:US12504221

    申请日:2009-07-16

    Abstract: A method of manufacturing an ink-jet head is disclosed. The method in accordance with an embodiment of the present invention includes: forming a dividing groove such that one surface of a piezoelectric element is divided corresponding to the position of the chamber; filling the dividing groove with a filler; bonding one surface of the piezoelectric element to one surface of the ink-jet head in which the chamber is formed; and polishing the other surface of the piezoelectric element such that the filler is exposed.

    Abstract translation: 公开了一种制造喷墨头的方法。 根据本发明的实施例的方法包括:形成分隔槽,使得压电元件的一个表面相应于腔室的位置被分开; 用填料填充分隔槽; 将压电元件的一个表面粘合到其中形成该腔室的喷墨头的一个表面; 并抛光压电元件的另一表面,使得填料被暴露。

    METHODS OF MANUFACTURING SEMICONDUCTOR DEVICE
    46.
    发明申请
    METHODS OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号:US20120122286A1

    公开(公告)日:2012-05-17

    申请号:US13290285

    申请日:2011-11-07

    Abstract: In a method of manufacturing a semiconductor device, a first etching mask and a second etching mask are formed sequentially on a metal gate structure on a substrate and a first insulating interlayer covering a sidewall of the metal gate structure respectively. An opening is formed to expose a top surface of the substrate by removing a portion of the first insulating interlayer not overlapped with the first etching mask or the second etching mask. A metal silicide pattern is formed on the exposed top surface of the substrate. A plug on the metal silicide pattern is formed to fill a remaining portion of the opening. Further, a planarization layer may be used as the second etching mask.

    Abstract translation: 在制造半导体器件的方法中,依次在基板上的金属栅极结构和覆盖金属栅极结构的侧壁的第一绝缘夹层上形成第一蚀刻掩模和第二蚀刻掩模。 通过除去与第一蚀刻掩模或第二蚀刻掩模不重叠的第一绝缘夹层的一部分,形成开口以暴露基板的顶表面。 在衬底的暴露的顶表面上形成金属硅化物图案。 形成金属硅化物图案上的塞子以填充开口的剩余部分。 此外,可以使用平坦化层作为第二蚀刻掩模。

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