High refractive index hydrogenated silicon carbide and process

    公开(公告)号:US11142820B2

    公开(公告)日:2021-10-12

    申请号:US16250488

    申请日:2019-01-17

    Abstract: In a method for depositing a layer of amorphous hydrogenated silicon carbide (SiC:H), a gas mixture comprising a reactive gas to inert gas volume ratio of 1:12 to 2:3 is introduced into a reaction chamber of a plasma-enhanced chemical vapor deposition apparatus. The reactive gas has a ratio of Si of 50 to 60, C of 3 to 13, and H of 32 to 42 at %. The inert gas comprises i) a first inert gas selected from helium, neon and mixtures; and ii) a second inert gas selected from argon, krypton, xenon and mixtures. The reaction plasma is at a power frequency of 1-16 MHz at a power level of 100 W to 700 W. The resulting layer exhibits a refractive index of not less than 2.4 and a loss of not more than 180 dB/cm at an indicated wavelength within 800 to 900 nm.

    Layered optical waveguide and near field transducer
    48.
    发明授权
    Layered optical waveguide and near field transducer 有权
    分层光波导和近场传感器

    公开(公告)号:US09304252B2

    公开(公告)日:2016-04-05

    申请号:US14182486

    申请日:2014-02-18

    Abstract: Waveguides that include a top cladding layer made of a material having an index of refraction n4; a core bilayer structure, the core bilayer structure including a lower index core layer having an index of refraction n3; and a higher index core layer having an index of refraction n1, wherein the higher index core layer includes TiO2 and one or more than one of Nb2O5, CeO2, Ta2O5, ZrO2, HfO2, Y2O3, Sc2O3, MgO, Al2O3 and SiO2, wherein the lower index core layer is adjacent the higher index core layer; a bottom cladding layer made of a material having an index of refraction n2, wherein the waveguide is configured with the higher index core layer of the core bilayer structure adjacent the top cladding layer and the lower index core layer of the core bilayer structure adjacent the bottom cladding layer, and wherein n4 is less than n3 and n1, and n2 is less than n3 and n1.

    Abstract translation: 包括由具有折射率n4的材料制成的顶部覆层的波导; 核心双层结构,核心双层结构包括具有折射率n3的较低折射率核心层; 以及具有折射率n1的高折射率芯层,其中所述较高折射率芯层包括TiO 2和Nb 2 O 5,CeO 2,Ta 2 O 5,ZrO 2,HfO 2,Y 2 O 3,Sc 2 O 3,MgO,Al 2 O 3和SiO 2中的一种或多种,​​其中 较低指数核心层与较高指数核心层相邻; 由具有折射率n2的材料制成的底部包层,其中所述波导配置有与所述顶部包覆层相邻的所述芯层双层结构的较高折射率芯层和所述芯层双层结构的较低折射率核心层邻近所述底部 包层,其中n4小于n3和n1,n2小于n3和n1。

    LAYERED OPTICAL WAVEGUIDE AND NEAR FIELD TRANSDUCER
    49.
    发明申请
    LAYERED OPTICAL WAVEGUIDE AND NEAR FIELD TRANSDUCER 有权
    层状光波导和近场传感器

    公开(公告)号:US20150277039A1

    公开(公告)日:2015-10-01

    申请号:US14182486

    申请日:2014-02-18

    Abstract: Waveguides that include a top cladding layer made of a material having an index of refraction n4; a core bilayer structure, the core bilayer structure including a lower index core layer having an index of refraction n3; and a higher index core layer having an index of refraction n1, wherein the higher index core layer includes TiO2 and one or more than one of Nb2O5, CeO2, Ta2O5, ZrO2, HfO2, Y2O3, Sc2O3, MgO, Al2O3 and SiO2, wherein the lower index core layer is adjacent the higher index core layer; a bottom cladding layer made of a material having an index of refraction n2, wherein the waveguide is configured with the higher index core layer of the core bilayer structure adjacent the top cladding layer and the lower index core layer of the core bilayer structure adjacent the bottom cladding layer, and wherein n4 is less than n3 and n1, and n2 is less than n3 and n1.

    Abstract translation: 包括由具有折射率n4的材料制成的顶部覆层的波导; 核心双层结构,核心双层结构包括具有折射率n3的较低折射率核心层; 以及具有折射率n1的高折射率芯层,其中所述较高折射率芯层包括TiO 2和Nb 2 O 5,CeO 2,Ta 2 O 5,ZrO 2,HfO 2,Y 2 O 3,Sc 2 O 3,MgO,Al 2 O 3和SiO 2中的一种或多种,​​其中 较低指数核心层与较高指数核心层相邻; 由具有折射率n2的材料制成的底部包层,其中,所述波导配置有与所述顶部包覆层相邻的所述芯层双层结构的较高折射率的核心层和与所述核心双层结构相邻的底部的下部折射率核心层 包层,其中n4小于n3和n1,n2小于n3和n1。

    Heat assisted magnetic recording devices
    50.
    发明授权
    Heat assisted magnetic recording devices 有权
    热辅助磁记录装置

    公开(公告)号:US09053737B2

    公开(公告)日:2015-06-09

    申请号:US13719749

    申请日:2012-12-19

    CPC classification number: G11B13/08 G11B5/314 G11B5/6088 G11B2005/0021

    Abstract: Devices having an air bearing surface, the device including a magnetic write pole positioned adjacent the air bearing surface; a near field transducer including a peg region and an adjacent disk region, wherein the peg region is adjacent the air bearing surface; a heat sink; and an optical waveguide including a top cladding layer and a core layer, wherein the heat sink is positioned between the magnetic write pole and the near field transducer and the near field transducer is positioned between the optical waveguide and the heat sink, and wherein at least a portion of at least one of the heat sink, the optical waveguide, or the write pole includes beryllium oxide (BeO).

    Abstract translation: 具有空气轴承表面的装置,该装置包括邻近空气轴承表面定位的磁性写入磁极; 包括钉区域和相邻盘区域的近场换能器,其中所述钉区域邻近所述空气支承表面; 散热器 以及包括顶部包覆层和芯层的光波导,其中所述散热器位于所述磁性写入极和所述近场换能器之间,并且所述近场换能器位于所述光波导和所述散热器之间,并且其中至少 散热器,光波导或写极中的至少一个的一部分包括氧化铍(BeO)。

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