公开(公告)号：US10903402B2

公开(公告)日：2021-01-26

申请号：US16522202

申请日：2019-07-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kaoru Tsuchiya ,  Aya Anzai ,  Masayuki Sakakura ,  Masaharu Nagai ,  Yutaka Matsuda

IPC: H01L33/52 ,  H01L27/32 ,  H01L51/52

Abstract: An object of the present invention is to provide such a sealing structure that a material to be a deterioration factor such as water or oxygen is prevented from entering from external and sufficient reliability is obtained in a display using an organic or inorganic electroluminescent element. In view of the above object, focusing on permeability of an interlayer insulating film, deterioration of an electroluminescent element is suppressed and sufficient reliability is obtained by preventing water entry from an interlayer insulating film according to the present invention.

公开(公告)号：US10680049B2

公开(公告)日：2020-06-09

申请号：US16358904

申请日：2019-03-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Makoto Udagawa ,  Masahiko Hayakawa ,  Jun Koyama ,  Mitsuaki Osame ,  Aya Anzai

IPC: H01L27/32 ,  H01L29/786 ,  H01L51/52 ,  H01L27/12

Abstract: The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.

公开(公告)号：US10679553B2

公开(公告)日：2020-06-09

申请号：US15482886

申请日：2017-04-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yu Yamazaki ,  Aya Anzai ,  Mitsuaki Osame

IPC: G09G3/3233 ,  G09G3/3266 ,  G09G3/20 ,  G09G3/3291 ,  F21V23/00 ,  F21V23/06 ,  H01L27/32 ,  H01L51/52 ,  H01L27/12 ,  H01L29/786

Abstract: A light emitting device and an element substrate which are capable of suppressing variations in luminance intensity of a light emitting element among pixels due to characteristic variations of a driving transistor without suppressing off-current of a switching transistor low and increasing storage capacity of a capacitor. A gate potential of a driving transistor is connected to a first scan line or a second scan line, and the driving transistor operates in a saturation region. A current controlling transistor which operates in a linear region is connected in series to the driving transistor. A video signal which transmits a light emission or non-emission of a pixel is input to the gate of the current controlling transistor through a switching transistor.

公开(公告)号：US20190355297A1

公开(公告)日：2019-11-21

申请号：US16530361

申请日：2019-08-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Mitusaki Osame ,  Aya Anzai ,  Yoshifumi Tanada ,  Keisuke Miyagawa ,  Satoshi Seo ,  Shunpei Yamazaki

IPC: G09G3/32 ,  G09G3/3266 ,  G09G3/3291 ,  G09G3/3233 ,  H01L33/00 ,  G09G3/3258

Abstract: A light emitting device that achieves long life, and which is capable of performing high duty drive, by suppressing initial light emitting element deterioration is provided. Reverse bias application to an EL element (109) is performed one row at a time by forming a reverse bias electric power source line (112) and a reverse bias TFT (108). Reverse bias application can therefore be performed in synchronous with operations for write-in of an image signal, light emission, erasure, and the like. Reverse bias application therefore becomes possible while maintaining a duty equivalent to that of a conventional driving method.

公开(公告)号：US10461140B2

公开(公告)日：2019-10-29

申请号：US15894981

申请日：2018-02-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Makoto Udagawa ,  Masahiko Hayakawa ,  Jun Koyama ,  Mitsuaki Osame ,  Aya Anzai

IPC: H01L29/786 ,  H01L27/32 ,  H01L51/52 ,  H01L27/12

Abstract: The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.

公开(公告)号：US20180315370A1

公开(公告)日：2018-11-01

申请号：US16027892

申请日：2018-07-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Mitsuaki Osame ,  Aya Anzai ,  Yoshifumi Tanada ,  Keisuke Miyagawa ,  Satoshi Seo ,  Shunpei Yamazaki

IPC: G09G3/32 ,  H01L33/00 ,  G09G3/3258 ,  G09G3/3233 ,  G09G3/3291 ,  G09G3/3266

CPC classification number: G09G3/32 ,  G09G3/3233 ,  G09G3/3258 ,  G09G3/3266 ,  G09G3/3291 ,  G09G2300/043 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2310/0251 ,  G09G2310/0256 ,  G09G2310/027 ,  G09G2310/061 ,  G09G2310/08 ,  G09G2320/043 ,  G09G2320/045 ,  H01L33/0041

Abstract: A light emitting device that achieves long life, and which is capable of performing high duty drive, by suppressing initial light emitting element deterioration is provided. Reverse bias application to an EL element (109) is performed one row at a time by forming a reverse bias electric power source line (112) and a reverse bias TFT (108). Reverse bias application can therefore be performed in synchronous with operations for write-in of an image signal, light emission, erasure, and the like. Reverse bias application therefore becomes possible while maintaining a duty equivalent to that of a conventional driving method.

公开(公告)号：US20180204988A1

公开(公告)日：2018-07-19

申请号：US15919780

申请日：2018-03-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kaoru Tsuchiya ,  Aya Anzai ,  Masayuki Sakakura ,  Masaharu Nagai ,  Yutaka Matsuda

IPC: H01L33/52 ,  H01L27/32 ,  H01L51/52

CPC classification number: H01L33/52 ,  H01L27/3244 ,  H01L27/3276 ,  H01L51/5246 ,  H01L2251/5323 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An object of the present invention is to provide such a sealing structure that a material to be a deterioration factor such as water or oxygen is prevented from entering from external and sufficient reliability is obtained in a display using an organic or inorganic electroluminescent element. In view of the above object, focusing on permeability of an interlayer insulating film, deterioration of an electroluminescent element is suppressed and sufficient reliability is obtained by preventing water entry from an interlayer insulating film according to the present invention.

公开(公告)号：US10019935B2

公开(公告)日：2018-07-10

申请号：US15637075

申请日：2017-06-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Mitsuaki Osame ,  Aya Anzai ,  Yoshifumi Tanada ,  Keisuke Miyagawa ,  Satoshi Seo ,  Shunpei Yamazaki

IPC: G09G3/32

CPC classification number: G09G3/32 ,  G09G3/3233 ,  G09G3/3258 ,  G09G3/3266 ,  G09G3/3291 ,  G09G2300/043 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2310/0251 ,  G09G2310/0256 ,  G09G2310/027 ,  G09G2310/061 ,  G09G2310/08 ,  G09G2320/043 ,  G09G2320/045 ,  H01L33/0041

Abstract: A light emitting device that achieves long life, and which is capable of performing high duty drive, by suppressing initial light emitting element deterioration is provided. Reverse bias application to an EL element (109) is performed one row at a time by forming a reverse bias electric power source line (112) and a reverse bias TFT (108). Reverse bias application can therefore be performed in synchronous with operations for write-in of an image signal, light emission, erasure, and the like. Reverse bias application therefore becomes possible while maintaining a duty equivalent to that of a conventional driving method.

公开(公告)号：US09905624B2

公开(公告)日：2018-02-27

申请号：US15433007

申请日：2017-02-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Makoto Udagawa ,  Masahiko Hayakawa ,  Jun Koyama ,  Mitsuaki Osame ,  Aya Anzai

IPC: H01L27/32 ,  H01L29/786 ,  H01L51/52 ,  H01L27/12

CPC classification number: H01L27/3262 ,  H01L27/12 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/3276 ,  H01L29/78675 ,  H01L29/78696 ,  H01L51/52

Abstract: The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.

公开(公告)号：US20170301285A1

公开(公告)日：2017-10-19

申请号：US15637075

申请日：2017-06-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Mitsuaki Osame ,  Aya Anzai ,  Yoshifumi Tanada ,  Keisuke Miyagawa ,  Satoshi Seo ,  Shunpei Yamazaki

IPC: G09G3/32

CPC classification number: G09G3/32 ,  G09G3/3233 ,  G09G3/3258 ,  G09G3/3266 ,  G09G3/3291 ,  G09G2300/043 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2310/0251 ,  G09G2310/0256 ,  G09G2310/027 ,  G09G2310/061 ,  G09G2310/08 ,  G09G2320/043 ,  G09G2320/045 ,  H01L33/0041

Abstract: A light emitting device that achieves long life, and which is capable of performing high duty drive, by suppressing initial light emitting element deterioration is provided. Reverse bias application to an EL element (109) is performed one row at a time by forming a reverse bias electric power source line (112) and a reverse bias (108). Reverse bias application can therefore be performed in synchronous with operations for write-in of an image signal, light emission, erasure, and the like. Reverse bias application therefore becomes possible while maintaining a duty equivalent to that of a conventional driving method.