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    ELEMENT SUBSTRATE AND LIGHT EMITTING DEVICE
    1.
    发明申请
    ELEMENT SUBSTRATE AND LIGHT EMITTING DEVICE 有权

    公开(公告)号：US20220076628A1

    公开(公告)日：2022-03-10

    申请号：US17526062

    申请日：2021-11-15

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Yu Yamazaki ,  Aya Anzai ,  Mitsuaki Osame

    IPC: G09G3/3233 ,  F21V23/06 ,  G09G3/3266 ,  H01L27/32 ,  F21V23/00

    Abstract: A light emitting device and an element substrate which are capable of suppressing variations in luminance intensity of a light emitting element among pixels due to characteristic variations of a driving transistor without suppressing off-current of a switching transistor low and increasing storage capacity of a capacitor. A gate potential of a driving transistor is connected to a first scan line or a second scan line, and the driving transistor operates in a saturation region. A current controlling transistor which operates in a linear region is connected in series to the driving transistor. A video signal which transmits a light emission or non-emission of a pixel is input to the gate of the current controlling transistor through a switching transistor.

    Element substrate and light emitting device
    2.
    发明授权
    Element substrate and light emitting device 有权

    公开(公告)号：US10679553B2

    公开(公告)日：2020-06-09

    申请号：US15482886

    申请日：2017-04-10

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Yu Yamazaki ,  Aya Anzai ,  Mitsuaki Osame

    IPC: G09G3/3233 ,  G09G3/3266 ,  G09G3/20 ,  G09G3/3291 ,  F21V23/00 ,  F21V23/06 ,  H01L27/32 ,  H01L51/52 ,  H01L27/12 ,  H01L29/786

    Abstract: A light emitting device and an element substrate which are capable of suppressing variations in luminance intensity of a light emitting element among pixels due to characteristic variations of a driving transistor without suppressing off-current of a switching transistor low and increasing storage capacity of a capacitor. A gate potential of a driving transistor is connected to a first scan line or a second scan line, and the driving transistor operates in a saturation region. A current controlling transistor which operates in a linear region is connected in series to the driving transistor. A video signal which transmits a light emission or non-emission of a pixel is input to the gate of the current controlling transistor through a switching transistor.

    Element substrate and light emitting device
    6.
    发明授权
    Element substrate and light emitting device 有权
    元件基板和发光器件

    公开(公告)号：US09147720B2

    公开(公告)日：2015-09-29

    申请号：US14305455

    申请日：2014-06-16

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Mitsuaki Osame ,  Aya Anzai ,  Yu Yamazaki

    IPC: H01L27/28 ,  H01L51/52 ,  H01L27/32 ,  G09G3/32 ,  H01L29/786 ,  H01L51/50 ,  G09G3/20

    CPC classification number: H01L27/326 ,  G09G3/2022 ,  G09G3/3233 ,  G09G2300/0417 ,  G09G2300/0842 ,  G09G2300/0885 ,  G09G2310/0251 ,  H01L27/283 ,  H01L29/78672 ,  H01L51/5012 ,  H01L51/5296

    Abstract: A light emitting device and an element substrate which are capable of suppressing variations in the luminance intensity of a light emitting element among pixels due to characteristic variations of a driving transistor without suppressing off-current of a switching transistor low and increasing storage capacity of a capacitor. According to the invention, a depletion mode transistor is used as a driving transistor. The gate of the driving transistor is fixed in its potential or connected to the source or drain thereof to operate in a saturation region with a constant current flow. A current controlling transistor which operates in a linear region is connected in series to the driving transistor, and a video signal for transmitting a light emission or non-emission of a pixel is inputted to the gate of the current controlling transistor through a switching transistor.

    Abstract translation: 一种发光器件和元件衬底，其能够抑制由于驱动晶体管的特性变化而导致的像素之中的发光元件的亮度强度的变化，而不会抑制开关晶体管的截止电流低并且增加电容器的存储容量 。 根据本发明，使用耗尽型晶体管作为驱动晶体管。 驱动晶体管的栅极固定在其电位或连接到其源极或漏极，以在具有恒定电流的饱和区域中工作。 在线性区域中工作的电流控制晶体管与驱动晶体管串联连接，并且用于透射像素的发光或不发光的视频信号通过开关晶体管输入到电流控制晶体管的栅极。

    ELEMENT SUBSTRATE AND LIGHT EMITTING DEVICE
    7.
    发明申请
    ELEMENT SUBSTRATE AND LIGHT EMITTING DEVICE 有权
    元件基板和发光装置

    公开(公告)号：US20140291657A1

    公开(公告)日：2014-10-02

    申请号：US14305455

    申请日：2014-06-16

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Mitsuaki Osame ,  Aya Anzai ,  Yu Yamazaki

    IPC: H01L27/32 ,  H01L29/786 ,  H01L51/50

    CPC classification number: H01L27/326 ,  G09G3/2022 ,  G09G3/3233 ,  G09G2300/0417 ,  G09G2300/0842 ,  G09G2300/0885 ,  G09G2310/0251 ,  H01L27/283 ,  H01L29/78672 ,  H01L51/5012 ,  H01L51/5296

    Abstract: A light emitting device and an element substrate which are capable of suppressing variations in the luminance intensity of a light emitting element among pixels due to characteristic variations of a driving transistor without suppressing off-current of a switching transistor low and increasing storage capacity of a capacitor. According to the invention, a depletion mode transistor is used as a driving transistor. The gate of the driving transistor is fixed in its potential or connected to the source or drain thereof to operate in a saturation region with a constant current flow. A current controlling transistor which operates in a linear region is connected in series to the driving transistor, and a video signal for transmitting a light emission or non-emission of a pixel is inputted to the gate of the current controlling transistor through a switching transistor.

    Abstract translation: 一种发光器件和元件衬底，其能够抑制由于驱动晶体管的特性变化而导致的像素之中的发光元件的亮度强度的变化，而不会抑制开关晶体管的截止电流低并且增加电容器的存储容量 。 根据本发明，使用耗尽型晶体管作为驱动晶体管。 驱动晶体管的栅极固定在其电位或连接到其源极或漏极，以在具有恒定电流的饱和区域中工作。 在线性区域中工作的电流控制晶体管与驱动晶体管串联连接，并且用于透射像素的发光或不发光的视频信号通过开关晶体管输入到电流控制晶体管的栅极。

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