公开(公告)号：US10559599B2

公开(公告)日：2020-02-11

申请号：US16014367

申请日：2018-06-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Rihito Wada ,  Yoko Chiba

IPC: H01L27/12 ,  G02F1/1339 ,  G02F1/1345 ,  H01L29/417 ,  H01L29/786 ,  H01L29/66 ,  H01L27/32 ,  H01L29/04 ,  H01L29/24 ,  H01L51/52

Abstract: A display device includes a pixel portion in which a pixel electrode layer is arranged in a matrix, and an inverted staggered thin film transistor having a combination of at least two kinds of oxide semiconductor layers with different amounts of oxygen is provided corresponding to the pixel electrode layer. In the periphery of the pixel portion in this display device, a pad portion is provided to be electrically connected to a common electrode layer formed on a counter substrate through a conductive layer made of the same material as the pixel electrode layer. One objection of our invention to prevent a defect due to separation of a thin film in various kinds of display devices is realized, by providing a structure suitable for a pad portion provided in a display panel.

公开(公告)号：US10373843B2

公开(公告)日：2019-08-06

申请号：US14790668

申请日：2015-07-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba ,  Masayuki Sakakura ,  Yoshiaki Oikawa

IPC: H01L21/477 ,  H01L29/66 ,  H01L29/786 ,  H01L27/12 ,  H01L21/02 ,  G02F1/1333 ,  G02F1/1368

Abstract: An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.

公开(公告)号：US10367006B2

公开(公告)日：2019-07-30

申请号：US15428340

申请日：2017-02-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Tomoya Futamura ,  Takahiro Kasahara

IPC: H01L29/24 ,  H01L27/12 ,  H01L29/786 ,  H01L29/20 ,  H01L29/10

Abstract: A display device including an oxide semiconductor, a protective circuit and the like having appropriate structures and a small occupied area is necessary. The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first oxide semiconductor layer which is over the gate insulating layer and overlaps with the gate electrode; and a first wiring layer and a second wiring layer each of which is formed by stacking a conductive layer and a second oxide semiconductor layer and whose end portions are over the first oxide semiconductor layer and overlap with the gate electrode. The gate electrode of the non-linear element is connected to a scan line or a signal line, the first wiring layer or the second wiring layer of the non-linear element is directly connected to the gate electrode layer so as to apply potential of the gate electrode.

公开(公告)号：US10304962B2

公开(公告)日：2019-05-28

申请号：US14816686

申请日：2015-08-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo Akimoto ,  Tatsuya Honda ,  Norihito Sone

IPC: H01L21/02 ,  H01L21/465 ,  H01L21/477 ,  H01L27/12 ,  H01L29/786 ,  H01L21/428 ,  H01L29/04 ,  H01L29/66

Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

公开(公告)号：US10229904B2

公开(公告)日：2019-03-12

申请号：US14700455

申请日：2015-04-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Tomoya Futamura ,  Takahiro Kasahara

IPC: H01L21/02 ,  H01L29/786 ,  H01L27/12 ,  H01L27/02

Abstract: A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, a channel protective layer overlapping with a channel formation region of the first oxide semiconductor layer, and a pair of a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the channel protective layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.

公开(公告)号：US10115831B2

公开(公告)日：2018-10-30

申请号：US15220532

申请日：2016-07-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masayuki Sakakura ,  Ryosuke Watanabe ,  Junichiro Sakata ,  Kengo Akimoto ,  Akiharu Miyanaga ,  Takuya Hirohashi ,  Hideyuki Kishida

IPC: H01L29/04 ,  H01L29/786 ,  H01L27/12 ,  H01L29/45

Abstract: In a channel protected thin film transistor in which a channel formation region is formed using an oxide semiconductor, an oxide semiconductor layer which is dehydrated or dehydrogenated by a heat treatment is used as an active layer, a crystal region including nanocrystals is included in a superficial portion in the channel formation region, and the rest portion is amorphous or is formed of a mixture of amorphousness/non-crystals and microcrystals, where an amorphous region is dotted with microcrystals. By using an oxide semiconductor layer having such a structure, a change to an n-type caused by entry of moisture or elimination of oxygen to or from the superficial portion and generation of a parasitic channel can be prevented and a contact resistance with a source and drain electrodes can be reduced.

公开(公告)号：US10101867B2

公开(公告)日：2018-10-16

申请号：US15922238

申请日：2018-03-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo Akimoto ,  Hironobu Takahashi ,  Yuki Okamoto ,  Isamu Shigemori

IPC: G06F3/044 ,  G09G3/36 ,  G09G3/3233 ,  G06F3/041 ,  H01L27/32

Abstract: A flexible display device with high viewability is provided. The display device includes a first substrate, a second substrate, a first element layer, and a second element layer. The first element layer is positioned between the first substrate and the second substrate. The second element layer is positioned between the first substrate and the second substrate. The first element layer and the second element layer overlap with each other in a region. The first substrate and the second substrate have flexibility. The first element layer includes a display element and a first circuit. The display element is electrically connected to the first circuit. The second element layer includes a sensor element. The sensor element has a function of sensing distortion.

公开(公告)号：US09911865B2

公开(公告)日：2018-03-06

申请号：US14947109

申请日：2015-11-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kengo Akimoto

IPC: H01L29/786 ,  H01L29/24 ,  H01L21/02 ,  H01L29/66 ,  H01L29/49

CPC classification number: H01L29/78696 ,  H01L21/02318 ,  H01L21/02323 ,  H01L21/0234 ,  H01L21/02565 ,  H01L29/247 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

Abstract: An object is to provide favorable interface characteristics of a thin film transistor including an oxide semiconductor layer without mixing of an impurity such as moisture. Another object is to provide a semiconductor device including a thin film transistor having excellent electric characteristics and high reliability, and a method by which a semiconductor device can be manufactured with high productivity. A main point is to perform oxygen radical treatment on a surface of a gate insulating layer. Accordingly, there is a peak of the oxygen concentration at an interface between the gate insulating layer and a semiconductor layer, and the oxygen concentration of the gate insulating layer has a concentration gradient. The oxygen concentration is increased toward the interface between the gate insulating layer and the semiconductor layer.

公开(公告)号：US09881954B2

公开(公告)日：2018-01-30

申请号：US14731954

申请日：2015-06-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hironobu Takahashi ,  Yukinori Shima ,  Kengo Akimoto ,  Junichi Koezuka ,  Naoto Kusumoto

IPC: H01L27/146 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L27/14616 ,  H01L27/1225 ,  H01L27/14632 ,  H01L27/14663

Abstract: An imaging device with high imaging quality capable of being manufactured at low cost is provided. The imaging device includes a first transistor, a second transistor, a third transistor, a fourth transistor, a photodiode, and a capacitor. Each of the first to the fourth transistors includes a first gate electrode and a second gate electrode, and the second gate electrode of each of the first to the fourth transistors and one electrode of the capacitor are electrically connected to an anode electrode of the photodiode.

公开(公告)号：US09865740B2

公开(公告)日：2018-01-09

申请号：US14585953

申请日：2014-12-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo Akimoto ,  Junichiro Sakata ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L27/12

Abstract: An object is to provide a method for manufacturing a highly reliable semiconductor device including thin film transistors which have stable electric characteristics and are formed using an oxide semiconductor. A method for manufacturing a semiconductor device includes the steps of: forming an oxide semiconductor film over a gate electrode with a gate insulating film interposed between the oxide semiconductor film and the gate electrode, over an insulating surface; forming a first conductive film including at least one of titanium, molybdenum, and tungsten, over the oxide semiconductor film; forming a second conductive film including a metal having lower electronegativity than hydrogen, over the first conductive film; forming a source electrode and a drain electrode by etching of the first conductive film and the second conductive film; and forming an insulating film in contact with the oxide semiconductor film, over the oxide semiconductor film, the source electrode, and the drain electrode.