公开(公告)号：US07397079B2

公开(公告)日：2008-07-08

申请号：US11245527

申请日：2005-10-07

申请人： Yong-Suk Choi ,  Seung-Beom Yoon ,  Yong-Tae Kim ,  Jin-Woo Kim

发明人： Yong-Suk Choi ,  Seung-Beom Yoon ,  Yong-Tae Kim ,  Jin-Woo Kim

IPC分类号： H01L29/76 ,  H01L29/788 ,  H01L21/8238

CPC分类号： H01L29/7881 ,  H01L21/28273 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/42324

摘要： A non-volatile memory device includes a control gate electrode disposed on a substrate with a first insulation layer interposed therebetween and a floating gate disposed in a hole exposing substrate through the control gate electrode and the first insulation layer. A second insulation layer is interposed between the floating gate and the substrate, and between the floating gate and the control gate.

摘要翻译： 非易失性存储器件包括设置在衬底上的控制栅电极，其间插入有第一绝缘层，以及设置在通过控制栅电极和第一绝缘层暴露衬底的孔中的浮置栅极。 第二绝缘层介于浮置栅极和衬底之间，以及浮置栅极和控制栅极之间。

公开(公告)号：US20080128783A1

公开(公告)日：2008-06-05

申请号：US12027771

申请日：2008-02-07

申请人： Hee-Seog Jeon ,  Seung-Beom Yoon ,  Jeong-Uk Han ,  Yong-Tae Kim

发明人： Hee-Seog Jeon ,  Seung-Beom Yoon ,  Jeong-Uk Han ,  Yong-Tae Kim

IPC分类号： H01L29/788

CPC分类号： H01L27/11521 ,  H01L27/115 ,  H01L29/40114 ,  H01L29/66825 ,  H01L29/7881

摘要： A split-gate non-volatile memory device includes a raised oxide layer on a field oxide region between adjacent split-gate memory cells, the raised oxide layer extending onto first and second floating gates included in the adjacent split-gate memory cells covered by a wordline electrically coupled to respective control gates included in the adjacent split-gate memory cells.

摘要翻译： 分闸非易失性存储器件包括在相邻的分裂栅极存储器单元之间的场氧化物区域上的凸起的氧化物层，所述凸起的氧化物层延伸到包括在相邻的分离栅极存储器单元中的第一和第二浮动栅极上， 字线电耦合到相邻分离门存储器单元中包括的相应控制门。

公开(公告)号：US07297596B2

公开(公告)日：2007-11-20

申请号：US11552359

申请日：2006-10-24

申请人： Sung-Sam Lee ,  Yong-Tae Kim ,  Mi-Youn Kim ,  Gyo-Young Jin ,  Dae-Won Ha ,  Yun-Gi Kim

发明人： Sung-Sam Lee ,  Yong-Tae Kim ,  Mi-Youn Kim ,  Gyo-Young Jin ,  Dae-Won Ha ,  Yun-Gi Kim

IPC分类号： H01L21/336

CPC分类号： H01L21/823437 ,  H01L21/823481

摘要： A semiconductor device capable of suppressing void migration is provided. The semiconductor device includes a dummy region extending in a first direction substantially perpendicular to a second direction in which a word line extends. In addition, an isolation layer pattern may not cut the dummy region in the second direction. Consequently, leaning of the dummy region and void migration are prevented. A method of fabricating the semiconductor device is also provided.

摘要翻译： 提供能够抑制空穴迁移的半导体器件。 半导体器件包括在基本上垂直于字线延伸的第二方向的第一方向上延伸的虚拟区域。 此外，隔离层图案可以不在第二方向上切割伪区域。 因此，防止虚拟区域的倾斜和空隙迁移。 还提供了制造半导体器件的方法。

公开(公告)号：US20070170491A1

公开(公告)日：2007-07-26

申请号：US11698658

申请日：2007-01-26

申请人： Yong-Suk Choi ,  Jeong-Uk Han ,  Hee-Seog Jeon ,  Yong-Tae Kim ,  Seung-Jin Yang ,  Hyok-Ki Kwon

发明人： Yong-Suk Choi ,  Jeong-Uk Han ,  Hee-Seog Jeon ,  Yong-Tae Kim ,  Seung-Jin Yang ,  Hyok-Ki Kwon

IPC分类号： H01L29/788

CPC分类号： H01L29/42336 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/7881

摘要： a nonvolatile memory device Includes an active region defined in a semiconductor substrate and a control gate electrode crossing over the active region. A gate insulating layer is interposed between the control gate electrode and the active reigon. A floating gate is formed in the active region to penetrate the control gate electrode and extend to a predetermined depth into the semiconductor substrate. A tunnel insulating layer is successively interposed between the control gate electrode and the floating gate, and between the semiconductor substrate and the floating gate. The floating gate may be formed after a trench is formed by sequentially etching a control gate conductive layer and the semiconductor substrate, and a tunnel insulating layer is formed on the trench and sidewalls of the control gate conductive layer. The floating gate is formed in the trench to extend into a predetermined depth into the semiconductor substrate.

摘要翻译： 非易失性存储器件包括限定在半导体衬底中的有源区和跨越有源区的控制栅电极。 栅极绝缘层介于控制栅极电极和活性电极之间。 在有源区中形成浮栅，以穿透控制栅电极并延伸到预定深度进入半导体衬底。 隧道绝缘层被连续插入在控制栅电极和浮栅之间以及半导体衬底和浮栅之间。 可以在通过顺序蚀刻控制栅极导电层和半导体衬底形成沟槽之后形成浮置栅极，并且在控制栅极导电层的沟槽和侧壁上形成隧道绝缘层。 浮动栅极形成在沟槽中，以延伸到预定深度进入半导体衬底。

公开(公告)号：US20070111451A1

公开(公告)日：2007-05-17

申请号：US11650237

申请日：2007-01-05

申请人： Jae-Hwang Kim ,  Yong-Suk Choi ,  Seung-Beom Yoon ,  Yong-Tae Kim ,  Young-Sam Park

发明人： Jae-Hwang Kim ,  Yong-Suk Choi ,  Seung-Beom Yoon ,  Yong-Tae Kim ,  Young-Sam Park

IPC分类号： H01L21/336

CPC分类号： H01L27/11521 ,  H01L27/115 ,  H01L29/40114 ,  H01L29/42328

摘要： A flash memory device including a tunnel dielectric layer, a floating gate layer, an interlayer dielectric layer and at least two mold layers formed on a semiconductor substrate and a method of manufacturing the same are provided. By sequentially patterning the layers, a first mold layer pattern and a floating gate layer pattern aligned with each other are formed. Exposed portions of side surfaces of the first mold layer pattern are selectively lateral etched, thereby forming a first mold layer second pattern having grooves in its sidewalls. A gate dielectric layer is formed on the semiconductor substrate adjacent to the floating gate layer pattern. A control gate having a width that is determined by the grooves in the second mold layer pattern is formed on the gate dielectric layer. By removing the first mold layer second pattern, spacers are formed on sidewalls of the control gate. Exposed portions of the interlayer dielectric layer and the floating gate layer pattern are selectively etched, using the spacer as an etch mask to form a floating gate having a width defined by the widths of the groove and spacer.

摘要翻译： 提供一种包括隧道介电层，浮栅，层间电介质层和形成在半导体衬底上的至少两个模层的闪存器件及其制造方法。 通过顺序地图案化这些层，形成彼此对准的第一模具层图案和浮动栅极层图案。 选择性地横向蚀刻第一模具层图案的侧表面的暴露部分，从而在其侧壁中形成具有凹槽的第一模具层第二图案。 栅极电介质层形成在与浮动栅层图案相邻的半导体衬底上。 具有由第二模层图案中的凹槽确定的宽度的控制栅极形成在栅介质层上。 通过去除第一模具层第二图案，在控制门的侧壁上形成间隔物。 使用间隔物作为蚀刻掩模来选择性地蚀刻层间电介质层和浮栅层图案的暴露部分，以形成具有由沟槽和间隔物的宽度限定的宽度的浮动栅极。

公开(公告)号：US07192833B2

公开(公告)日：2007-03-20

申请号：US11025279

申请日：2004-12-29

申请人： Jae-Hwang Kim ,  Yong-Suk Choi ,  Seung-Beom Yoon ,  Yong-Tae Kim ,  Young-Sam Park

发明人： Jae-Hwang Kim ,  Yong-Suk Choi ,  Seung-Beom Yoon ,  Yong-Tae Kim ,  Young-Sam Park

IPC分类号： H01L21/336

CPC分类号： H01L27/11521 ,  H01L21/28273 ,  H01L27/115 ,  H01L29/42328

摘要： A flash memory device including a tunnel dielectric layer, a floating gate layer, an interlayer dielectric layer and at least two mold layers formed on a semiconductor substrate and a method of manufacturing the same are provided. By sequentially patterning the layers, a first mold layer pattern and a floating gate layer pattern aligned with each other are formed. Exposed portions of side surfaces of the first mold layer pattern are selectively lateral etched, thereby forming a first mold layer second pattern having grooves in its sidewalls. A gate dielectric layer is formed on the semiconductor substrate adjacent to the floating gate layer pattern. A control gate having a width that is determined by the grooves in the second mold layer pattern is formed on the gate dielectric layer. By removing the first mold layer second pattern, spacers are formed on sidewalls of the control gate. Exposed portions of the interlayer dielectric layer and the floating gate layer pattern are selectively etched, using the spacer as an etch mask to form a floating gate having a width defined by the widths of the groove and spacer.

公开(公告)号：US20070012931A1

公开(公告)日：2007-01-18

申请号：US10554469

申请日：2004-04-23

申请人： Dong-Yeoul Lee ,  Yong-Tae Kim ,  Sang-Ho Lee ,  Jin-Hwan Kim ,  Min-Sang Lee

发明人： Dong-Yeoul Lee ,  Yong-Tae Kim ,  Sang-Ho Lee ,  Jin-Hwan Kim ,  Min-Sang Lee

IPC分类号： H01L33/00

CPC分类号： H01L33/504 ,  C09K11/7706 ,  C09K11/886 ,  H01L33/502 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/181 ,  Y02B20/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A white light semiconductor light emitting device includes a semiconductor LED and first and second phosphors provided on a light emitting region of the LED to emit light within a first wavelength range, which is different from that of light emitted from the LED, by absorbing a portion of the light emitted from the LED. The first and second phosphors are respectively a barium-silicate-base green phosphor and a zinc-selenium-base red phosphor.

摘要翻译： 白光半导体发光器件包括半导体LED以及设置在LED的发光区域上的第一和第二荧光体，以通过吸收一部分来发射与LED发射的光不同的第一波长范围内的光 从LED发出的光。 第一和第二荧光体分别是硅酸钡基绿色磷光体和锌 - 硒 - 基红色荧光体。

公开(公告)号：US07135254B2

公开(公告)日：2006-11-14

申请号：US10275383

申请日：2001-01-31

申请人： Kyung-Suk Yun ,  Byung-Won Cho ,  Won-Il Cho ,  Hyung-Sun Kim ,  Un-Sek Kim ,  Hee-Woo Rhee ,  Yong-Tae Kim

发明人： Kyung-Suk Yun ,  Byung-Won Cho ,  Won-Il Cho ,  Hyung-Sun Kim ,  Un-Sek Kim ,  Hee-Woo Rhee ,  Yong-Tae Kim

IPC分类号： H01M6/18

CPC分类号： H01M10/0565 ,  H01M2/1653 ,  H01M2/1666 ,  H01M2/1686 ,  H01M6/164 ,  H01M6/168 ,  H01M10/052 ,  H01M2300/0085

摘要： The present invention relates to a multi-layered, UV-cured polymer electrolyte and lithium secondary battery comprising the same, wherein the polymer electrolyte comprises: A) a separator layer formed of polymer electrolyte, PP, PE, PVdF or non-woven fabric, wherein the separator layer having two surfaces; B) at least one gelled polymer electrolyte layer located on at least one surface of the separator layer comprising: a) polymer obtained by curing ethyleneglycoldi(meth)acrylate oligomer of the formula (I) by UV irradiation: CH2═CR1COO(CH2CH2O)nCOCR2═CH2 wherein, R1 and R2 are independently hydrogen or methyl group, and n is a integer of 3–20; and b) at least one polymer selected from the group consisting of PVdF-based polymer, PAN-based polymer, PMMA-based polymer and PVC-based polymer; and C) organic electrolyte solution in which lithium salt is dissolved in a solvent.

摘要翻译： 本发明涉及包含该聚合物电解质的多层紫外线固化的聚合物电解质和锂二次电池，其中所述聚合物电解质包括：A）由聚合物电解质，PP，PE，PVdF或无纺布形成的隔离层， 其中所述隔离层具有两个表面; B）位于分离器层的至少一个表面上的至少一个胶凝聚合物电解质层，包括：a）通过UV照射固化式（I）的乙二醇二（甲基）丙烯酸酯低聚物获得的聚合物：CH 2 CO 2（CH 2 CH 2 CH 2）n CO 2 CH 2 CO 2（CH 2 CH 2 CH 2） 其中，R 1和R 2各自独立地为氢或甲基，n为3-20的整数; 和b）至少一种选自PVdF基聚合物，PAN基聚合物，基于PMMA的聚合物和基于PVC的聚合物的聚合物; 和C）其中锂盐溶解在溶剂中的有机电解质溶液。

公开(公告)号：US20060170028A1

公开(公告)日：2006-08-03

申请号：US11323355

申请日：2005-12-30

申请人： Hee-Seog Jeon ,  Seung-Beom Yoon ,  Jeong-Uk Han ,  Yong-Tae Kim

发明人： Hee-Seog Jeon ,  Seung-Beom Yoon ,  Jeong-Uk Han ,  Yong-Tae Kim

IPC分类号： H01L29/76

CPC分类号： H01L27/11521 ,  G11C16/0425 ,  H01L27/115 ,  H01L27/11524 ,  H01L29/42328

摘要： A non-volatile memory device includes a floating gate formed on a substrate with a gate insulation layer interposed therebetween, a tunnel insulation layer formed on the floating gate, a select gate electrode inducing charge introduction through the gate insulation layer, and a control gate electrode inducing charge tunneling occurring through the tunnel insulation layer. The select gate electrode is insulated from the control gate electrode. According to the non-volatile memory device, a select gate electrode and a control gate electrode are formed on a floating gate, and thus a voltage is applied to the respective gate electrodes to write and erase data.

摘要翻译： 非易失性存储器件包括形成在衬底上的栅极绝缘层之间的浮置栅极，形成在浮置栅极上的隧道绝缘层，通过栅极绝缘层引入电荷的选择栅极电极和控制栅电极 通过隧道绝缘层引起电荷隧穿。 选择栅电极与控制栅电极绝缘。 根据非易失性存储器件，在浮动栅极上形成选择栅电极和控制栅电极，从而向相应的栅电极施加电压以写入和擦除数据。

公开(公告)号：US08842903B2

公开(公告)日：2014-09-23

申请号：US12330124

申请日：2008-12-08

申请人： Seo-Young Hwang ,  Gun-Ill Lee ,  Jae-Yeon Song ,  Yong-Tae Kim

发明人： Seo-Young Hwang ,  Gun-Ill Lee ,  Jae-Yeon Song ,  Yong-Tae Kim

IPC分类号： H04N13/00 ,  H04N13/04 ,  H04N19/597

CPC分类号： H04N13/189 ,  H04N13/161 ,  H04N13/178 ,  H04N13/359 ,  H04N19/597

摘要： An apparatus includes a storage unit to receive and store an image file, a processor to parse a media data field of the image file including one or more image data samples and to parse a media header field including an image type data field indicating whether each of the one or more image data samples is one of 2 dimensional (2D) image data and 3 dimensional (3D) stereoscopic image data to generate an image corresponding to one of a 2D image and a 3D stereoscopic image based on the image type data field of the image file, and a display unit to display the generated image according to the image type data field of the image file.

摘要翻译： 一种装置，包括用于接收和存储图像文件的存储单元，处理器，用于解析包括一个或多个图像数据样本的图像文件的媒体数据字段，并解析包括图像类型数据字段的媒体头字段， 一个或多个图像数据样本是二维（2D）图像数据和三维（3D）立体图像数据之一，以基于图像类型数据字段生成对应于2D图像和3D立体图像中的一个的图像 图像文件和显示单元，用于根据图像文件的图像类型数据字段显示生成的图像。