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59 条记录 (耗时 0.192 秒)

    Highly efficient gallium nitride based light emitting diodes via surface roughening
    41.
    发明授权
    Highly efficient gallium nitride based light emitting diodes via surface roughening 有权
    通过表面粗糙化的高效氮化镓基发光二极管

    公开(公告)号：US08766296B2

    公开(公告)日：2014-07-01

    申请号：US12576122

    申请日：2009-10-08

    申请人： Tetsuo Fujii ,  Yan Gao ,  Evelyn L. Hu ,  Shuji Nakamura

    发明人： Tetsuo Fujii ,  Yan Gao ,  Evelyn L. Hu ,  Shuji Nakamura

    IPC分类号： H01L33/00

    CPC分类号： H01L33/22 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/60 ,  H01L2224/16225

    摘要： A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) of the LED and a surface of the N-face is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.

    摘要翻译： 一种基于氮化镓（GaN）的发光二极管（LED），其中通过LED的氮面（N面）提取光，并且将N面的表面粗糙化成一个或多个六边形锥体。 粗糙表面减少LED内部重复发生的光反射，从而从LED中提取更多的光。 通过各向异性蚀刻使N面的表面变粗糙，其可以包括干蚀刻或光增强化学（PEC）蚀刻。

    Highly efficient group-III nitride based light emitting diodes via fabrication of structures on an N-face surface
    42.
    发明授权
    Highly efficient group-III nitride based light emitting diodes via fabrication of structures on an N-face surface 有权
    高效率的III族氮化物基发光二极管通过在N面表面上制造结构

    公开(公告)号：US07704763B2

    公开(公告)日：2010-04-27

    申请号：US10581940

    申请日：2003-12-09

    申请人： Tetsuo Fujii ,  Yan Gao ,  Evelyn L. Hu ,  Shuji Nakamura

    发明人： Tetsuo Fujii ,  Yan Gao ,  Evelyn L. Hu ,  Shuji Nakamura

    IPC分类号： H01L33/00

    CPC分类号： H01L33/22 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/60 ,  H01L2224/16225

    摘要： A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) (42) of the LED and a surface of the N-face (42) is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face (42) is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.

    摘要翻译： 一种氮化镓（GaN）基发光二极管（LED），其中通过LED的氮面（N面）（42）提取光，并且将N面（42）的表面粗糙化成一个或多个 六角形锥体。 粗糙表面减少LED内部重复发生的光反射，从而从LED中提取更多的光。 通过各向异性蚀刻使N面（42）的表面粗糙化，其可以包括干蚀刻或光增强化学（PEC）蚀刻。

    Proton exchange membrane materials based on sulfonated poly (phthalazinones)
    43.
    发明授权
    Proton exchange membrane materials based on sulfonated poly (phthalazinones) 有权
    基于磺化聚（2,3-二氮杂萘酮）的质子交换膜材料

    公开(公告)号：US07678863B2

    公开(公告)日：2010-03-16

    申请号：US10529020

    申请日：2003-09-25

    申请人： Yan Gao ,  Michael D. Gulver ,  Gilles P. Robertson ,  Xigao Jian

    发明人： Yan Gao ,  Michael D. Gulver ,  Gilles P. Robertson ,  Xigao Jian

    IPC分类号： C08G73/06 ,  C08J5/20 ,  C08J5/22 ,  B01J39/18 ,  H01M8/10

    CPC分类号： C08J5/2256 ,  C08G65/4037 ,  C08G65/48 ,  C08G73/0694 ,  C08J2379/04 ,  H01M8/1027 ,  H01M8/103 ,  H01M8/1032 ,  H01M2300/0082

    摘要： A novel class of proton exchange membrane materials, sulfonated poly(phthalazinones), were prepared by modification of poly(phthalazinone). Sulfonation reactions were conducted at room temperature using mixtures of 95-98% concentrated sulfuric acid and 27-33% fuming sulfuric acid with different acid ratios in order to get SPPEK with degree of sulfonation (DS) in the range of 0.6 to 1.0. The presence of sulfonic acid groups was confirmed by FT-IR analysis, and the DS and structures were characterized by NMR. The introduction of sulfonic groups into the polymer chains led to an increase in the glass transition temperature and a decrease in the decomposition temperature. Membrane films were cast from solution in N,N-dimethylformamide or N,N-dimethylacetamide. Water uptakes and swelling ratios of the membrane films increased with DS and sulfonated polymers with DS>1.2 were water soluble at 80° C. Proton conductivity increased with DS and temperature up to 95° C., reaching 10−2 S/Cm.

    摘要翻译： 通过改性聚（酞嗪酮）制备了一类新颖的质子交换膜材料，磺化聚（2,3-二氮杂萘酮）。 使用95-98％浓硫酸和27-33％发烟硫酸的混合物在室温下进行磺化反应，以使得具有0.6-1.0的磺化度（DS）的SPPEK。 通过FT-IR分析证实磺酸基团的存在，并通过NMR表征DS和结构。 在聚合物链中引入磺基导致玻璃化转变温度的升高和分解温度的降低。 从N，N-二甲基甲酰胺或N，N-二甲基乙酰胺中的溶液中浇铸膜膜。 DS的吸水率和溶胀比随DS增加，DS> 1.2的磺化聚合物在80℃水溶性，质子传导率随DS升高，达到95℃，达到10-2 S / Cm。

    A NEUROGLOBIN ENZYME-LINKED IMMUNOSORBENT ASSAY KIT AND THE USE OF IT
    44.
    发明申请
    A NEUROGLOBIN ENZYME-LINKED IMMUNOSORBENT ASSAY KIT AND THE USE OF IT 审中-公开
    神经酰胺酶连接免疫测定试剂盒及其使用

    公开(公告)号：US20100028917A1

    公开(公告)日：2010-02-04

    申请号：US11913134

    申请日：2005-04-30

    申请人： Chenggang Zhang ,  Lihong Wang ,  Tingfang Chen ,  Aijia Shang ,  Yan Gao

    发明人： Chenggang Zhang ,  Lihong Wang ,  Tingfang Chen ,  Aijia Shang ,  Yan Gao

    IPC分类号： G01N33/53

    CPC分类号： G01N33/6896 ,  G01N2333/805 ,  G01N2800/2814 ,  G01N2800/2871

    摘要： The invention discloses a Neuroglobin enzyme-linked immunosorbent assay kit and the use of it. The Neuroglobin enzyme-linked immunosorbent assay kit provided by the invention includes Neuroglobin polyclonal antibody, Neuroglobin monoclonal antibody and enzyme labeled antibody. Neuroglobin monoclonal antibody is produced through culturing hybridoma cells prepared by cell conjugation after inoculating mice with Neuroglobin antigen, whereas Neuroglobin polyclonal antibody is produced from animal antiserum after inoculating with Neuroglobin antigen.

    摘要翻译： 本发明公开了一种神经球蛋白酶联免疫吸附测定试剂盒及其应用。 本发明提供的神经球蛋白酶联免疫吸附测定试剂盒包括神经球蛋白多克隆抗体，神经球蛋白单克隆抗体和酶标记抗体。 通过培养在用神经球蛋白抗原接种小鼠后通过细胞缀合制备的杂交瘤细胞产生神经球蛋白单克隆抗体，而在接种神经球蛋白抗原后，由动物抗血清产生神经球蛋白多克隆抗体。

    Method for Obtaining Data at an Electronic Communication Device
    45.
    发明申请
    Method for Obtaining Data at an Electronic Communication Device 审中-公开
    电子通信设备获取数据的方法

    公开(公告)号：US20100002861A1

    公开(公告)日：2010-01-07

    申请号：US12438806

    申请日：2007-08-07

    申请人： Yan Gao ,  Jin-Yue Chen

    发明人： Yan Gao ,  Jin-Yue Chen

    IPC分类号： H04M3/42

    CPC分类号： H04M3/42017 ,  H04M1/274516 ,  H04M1/72519 ,  H04M2203/2011

    摘要： A method for obtaining data at an electronic communication device enables transmission of data in response to a ring back tone. The method comprises transmitting from the electronic communication device to a network a call setup signal for a call to a callee device (step 205). A ring back tone associated with the callee device is then processed at the electronic communication device, wherein the ring back tone is received from the network in response to the call setup signal (step 210). A data request signal then transmitted, in response to the ring back tone, from the electronic communication device to the network (step 215). Data that are received from the network in response to the data request signal are then processed at the electronic communication device (step 220).

    摘要翻译： 一种用于在电子通信设备上获得数据的方法使得可以响应回铃音来传输数据。 该方法包括从电子通信设备向网络发送呼叫建立信号，用于呼叫被叫设备（步骤205）。 然后在电子通信设备处理与被叫设备相关联的回铃音，其中响应于呼叫建立信号从网络接收回铃音（步骤210）。 然后，数据请求信号响应于回铃音从电子通信设备发送到网络（步骤215）。 然后在电子通信设备处理从网络接收到的响应于数据请求信号的数据（步骤220）。