公开(公告)号：US20170271165A1

公开(公告)日：2017-09-21

申请号：US15448334

申请日：2017-03-02

Applicant: Tokyo Electron Limited

Inventor： Subhadeep Kal ,  Kandabara N. Tapily ,  Aelan Mosden

IPC: H01L21/3065 ,  H01L21/322

CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01J37/32724 ,  H01L21/0234 ,  H01L21/30604 ,  H01L21/31116 ,  H01L21/32135 ,  H01L21/322 ,  H01L29/0673 ,  H01L29/66439 ,  H01L29/775

Abstract: Isotropic silicon and silicon-germanium etching with tunable selectivity is described. The method includes receiving a substrate having a layer of silicon and a layer of silicon-germanium with sidewall surfaces of silicon and silicon-germanium being uncovered, positioning the substrate in a processing chamber configured for etching substrates, and modifying uncovered surfaces of silicon and silicon-germanium by exposing the uncovered surfaces of silicon and silicon-germanium to radical species. The method further includes executing a gaseous chemical oxide removal process that includes flowing a mixture of a nitrogen-containing gas and a fluorine-containing gas at a first substrate temperature to form a fluorine byproduct followed by executing a sublimation process to remove the fluorine byproduct at a second substrate temperature that is higher than the first substrate temperature, and controlling the second substrate temperature to tune the sublimation rate and etch selectivity of a silicon oxide material relative to a silicon-germanium oxide material.

公开(公告)号：US20160379835A1

公开(公告)日：2016-12-29

申请号：US15191963

申请日：2016-06-24

Applicant: Tokyo Electron Limited

Inventor： Subhadeep Kal ,  Nihar Mohanty ,  Angelique D. Raley ,  Aelan Mosden ,  Scott W. Lefevre

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/308

CPC classification number: H01L21/31116 ,  H01J37/32357 ,  H01J2237/334 ,  H01L21/67069

Abstract: A method and system for the dry removal of a material on a microelectronic workpiece are described. The method includes receiving a workpiece having a surface exposing a target layer to be at least partially removed, placing the workpiece on a workpiece holder in a dry, non-plasma etch chamber, and selectively removing at least a portion of the target layer from the workpiece. The selective removal includes operating the dry, non-plasma etch chamber to perform the following: exposing the surface of the workpiece to a chemical environment at a first setpoint temperature in the range of 35 degrees C. to 100 degrees C. to chemically alter a surface region of the target layer, and then, elevating the temperature of the workpiece to a second setpoint temperature at or above 100 degrees C. to remove the chemically treated surface region of the target layer.

Abstract translation: 描述了用于干移除微电子工件上的材料的方法和系统。 该方法包括接收具有暴露目标层至少部分去除的表面的工件，将工件放置在干燥的非等离子体蚀刻室中的工件保持器上，并且将目标层的至少一部分从 工件。 选择性去除包括操作干燥的非等离子体蚀刻室以执行以下操作：将工件的表面暴露于在35摄氏度至100摄氏度的范围内的第一设定点温度下的化学环境，以化学改变 目标层的表面区域，然后将工件的温度升高到等于或高于100℃的第二设定点温度，以去除目标层的经化学处理的表面区域。