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公开(公告)号：US20130101936A1
公开(公告)日：2013-04-25
申请号：US13616317
申请日：2012-09-14
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/11 , G03F7/2041
摘要： A positive resist composition comprising (A) a polymer comprising recurring units containing an acid labile group, recurring units having a lactone ring, and recurring units having an oxirane ring, the polymer being adapted to increase alkaline dissolution under the action of an acid, (B) a photoacid generator, and (C) a solvent forms a fine pattern with improved LWR, improved MEF, rectangular profile, and collapse resistance.
摘要翻译： 一种正型抗蚀剂组合物，其包含（A）包含含有酸不稳定基团的重复单元的聚合物，具有内酯环的重复单元和具有环氧乙烷环的重复单元的聚合物，所述聚合物适于在酸的作用下增加碱溶解性（ B）光致酸发生器，（C）溶剂形成具有改善的LWR，改进的MEF，矩形轮廓和抗倒塌性的精细图案。
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公开(公告)号：US20130052587A1
公开(公告)日：2013-02-28
申请号：US13586186
申请日：2012-08-15
CPC分类号： G03F7/0045 , G03F7/004 , G03F7/0046 , G03F7/0382 , G03F7/0397 , G03F7/325
摘要： A negative pattern is formed by coating a resist composition comprising a methylol-substituted urea, amide or urethane compound, a polymer comprising recurring units having an acid labile group-substituted hydroxyl group, and an acid generator onto a substrate, prebaking, exposing to high-energy radiation, and developing in an organic solvent developer such that the unexposed region of resist film is dissolved away and the exposed region of resist film is not dissolved. In image formation via positive/negative reversal by organic solvent development, the resist film is characterized by a high dissolution contrast between the unexposed and exposed regions.
摘要翻译： 通过将包含羟甲基取代的脲，酰胺或氨基甲酸酯化合物的抗蚀剂组合物，包含酸不稳定基取代的羟基的重复单元的聚合物和酸产生剂涂覆在基材上，预烘烤，暴露于高 能量辐射，并在有机溶剂显影剂中显影，使得抗蚀剂膜的未曝光区域被溶解并且抗蚀剂膜的曝光区域不溶解。 在通过有机溶剂显影的正/负反转的图像形成中，抗蚀剂膜的特征在于未曝光和曝光区域之间的高溶解度对比度。
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公开(公告)号：US20120135350A1
公开(公告)日：2012-05-31
申请号：US13303302
申请日：2011-11-23
申请人： Tomohiro Kobayashi , Eiji Fukuda , Takayuki Nagasawa , Ryosuke Taniguchi , Youichi Ohsawa , Masayoshi Sagehashi , Yoshio Kawai
发明人： Tomohiro Kobayashi , Eiji Fukuda , Takayuki Nagasawa , Ryosuke Taniguchi , Youichi Ohsawa , Masayoshi Sagehashi , Yoshio Kawai
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/11 , G03F7/2041
摘要： A positive resist composition comprising (A) a polymer comprising recurring units of a specific structure adapted to generate an acid in response to high-energy radiation and acid labile units, the polymer having an alkali solubility that increases under the action of an acid, and (B) a sulfonium salt of a specific structure exhibits a high resolution in forming fine size patterns, typically trench patterns and hole patterns. Lithographic properties of profile, DOF and roughness are improved.
摘要翻译： 一种正型抗蚀剂组合物，其包含（A）包含特定结构的重复单元的聚合物，所述重复单元适于响应于高能量辐射和酸不稳定单元产生酸，所述聚合物具有在酸的作用下增加的碱溶解度，以及 （B）特定结构的锍盐在形成精细尺寸图案（通常是沟槽图案和孔图案）中表现出高分辨率。 轮廓，DOF和粗糙度的光刻性能得到改善。
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44.发明授权Semiconductor integrated circuit device with fuse elements and control method therefore 失效因此，具有熔丝元件的半导体集成电路器件和控制方法公开(公告)号：US08120981B2
公开(公告)日：2012-02-21
申请号：US12555031
申请日：2009-09-08
申请人： Tomohiro Kobayashi
发明人： Tomohiro Kobayashi
IPC分类号： G11C17/18
CPC分类号： G11C17/16 , G11C17/165 , G11C17/18
摘要： A semiconductor integrated circuit device includes a first block, a second block, and a control section. The first block includes a first fuse, a first switching configured to write data to the first fuse, a first holding portion capable of holding a first instruction, and a first instruction portion configured to turn on the first switching when a second instruction is given thereto with the first instruction. The second block includes a second fuse, a second switching configured to write data to the second fuse, a second holding portion capable of holding the first instruction, and a second instruction portion configured to turn on the second switching when the second instruction is given thereto with the first instruction. The control section issues the second instruction at a point in time when the first instruction is held in the first and second holding portions.
摘要翻译： 半导体集成电路器件包括第一块，第二块和控制部。 第一块包括第一熔丝，被配置为向第一熔丝写入数据的第一转换器，能够保持第一指令的第一保持部分和被配置为当给予第二指令时接通第一切换的第一指令部分 用第一个指令。 第二块包括第二熔丝，第二开关被配置为向第二熔丝写入数据，第二保持部分能够保持第一指令;以及第二指令部分，配置成当给予第二指令时接通第二切换 用第一个指令。 控制部分在第一指令被保持在第一和第二保持部分的时间点发出第二指令。
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公开(公告)号：US07830736B2
公开(公告)日：2010-11-09
申请号：US12165720
申请日：2008-07-01
申请人： Takehiko Hojo , Tomohiro Kobayashi , Tetsuya Amano
发明人： Takehiko Hojo , Tomohiro Kobayashi , Tetsuya Amano
IPC分类号： G11C29/00
CPC分类号： G11C17/18 , G11C17/16 , G11C17/165 , G11C29/027 , G11C29/785 , G11C29/802
摘要： A semiconductor integrated circuit device includes a first fuse circuit, a second fuse circuit, and a control signal generating circuit which sends a first control signal and executes program such that the resistance value of the first fuse circuit becomes greater than the resistance value of the second fuse circuit, and sends a second control signal and executes reprogram such that the resistance value of the second fuse circuit becomes greater than the resistance value of the first fuse circuit.
摘要翻译： 半导体集成电路器件包括第一熔丝电路，第二熔丝电路和控制信号发生电路，其发送第一控制信号并执行程序，使得第一熔丝电路的电阻值变得大于第二熔丝电路的电阻值 熔丝电路，并发送第二控制信号并执行重新编程，使得第二熔丝电路的电阻值变得大于第一熔丝电路的电阻值。
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公开(公告)号：US20100266957A1
公开(公告)日：2010-10-21
申请号：US12761202
申请日：2010-04-15
申请人： Yuji HARADA , Jun Hatakeyama , Koji Hasegawa , Tomohiro Kobayashi
发明人： Yuji HARADA , Jun Hatakeyama , Koji Hasegawa , Tomohiro Kobayashi
CPC分类号： G03F7/0397 , G03F7/0046 , G03F7/2041
摘要： An additive polymer comprising recurring units of formula (1) is added to a resist composition comprising a base resin, a photoacid generator, and an organic solvent. R1 is hydrogen or methyl, R2 is alkylene or fluoroalkylene, and R3 is fluoroalkyl. The additive polymer is highly transparent to radiation with wavelength of up to 200 nm. Water repellency, water slip, acid lability, hydrolysis and other properties of the polymer may be adjusted by a choice of polymer structure.
摘要翻译： 将包含式（1）的重复单元的添加剂聚合物加入到包含基础树脂，光致酸发生剂和有机溶剂的抗蚀剂组合物中。 R1是氢或甲基，R2是亚烷基或氟代亚烷基，R3是氟烷基。 添加剂聚合物对波长高达200nm的辐射是高度透明的。 通过选择聚合物结构可以调节聚合物的拒水性，水滑动性，酸性，水解性和其它性能。
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公开(公告)号：US07727704B2
公开(公告)日：2010-06-01
申请号：US11773706
申请日：2007-07-05
CPC分类号： G03F7/0397 , G03F7/0046 , G03F7/0395 , G03F7/2041 , Y10S430/111 , Y10S430/12 , Y10S430/122 , Y10S430/126
摘要： In a positive resist composition comprising (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) a photoacid generator, component (A) is a polymer of formula (1) wherein R1 is H, methyl or trifluoromethyl, R2 and R3 are alkyl, R4 is a monovalent hydrocarbon group, X1 is O, S or CH2CH2, X2 is O, S, CH2 or CH2CH2, n is 1 or 2, a1, a2, c, d1 and d2 each are from 0 to less than 1, b is from 0.01 to less than 1, and a1+a2+b+c+d1+d2=1. The resist composition forms a pattern with high rectangularity at an enhanced resolution when processed by ArF lithography.
摘要翻译： 在包含（A）在酸的作用下变得可溶于碱性显影剂的树脂组分和（B）光酸产生剂的正型抗蚀剂组合物中，组分（A）是式（1）的聚合物，其中R 1是H， 甲基或三氟甲基，R2和R3是烷基，R4是一价烃基，X1是O，S或CH2CH2，X2是O，S，CH2或CH2CH2，n是1或2，a1，a2，c，d1和d2 各自为0至小于1，b为0.01至小于1，a1 + a2 + b + c + d1 + d2 = 1。 当通过ArF光刻处理时，抗蚀剂组合物以增强的分辨率形成具有高矩形性的图案。
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公开(公告)号：US20100097866A1
公开(公告)日：2010-04-22
申请号：US12555029
申请日：2009-09-08
申请人： Tomohiro Kobayashi
发明人： Tomohiro Kobayashi
摘要： A semiconductor memory device includes a memory cell array provided with a main memory cell array including a plurality of memory cells, and a dummy column including a plurality of dummy memory cells, a dummy readout current control section configured to control a current value of a dummy readout current of the dummy memory cell in such a manner that the current value becomes between the current values of the readout currents in first and second states of the memory cell, and a sense section provided with a sense amplifier configured to receive a readout current in one of the first and second states, or dummy readout current as an input, comparing these currents with each other, and outputting the currents.
摘要翻译： 一种半导体存储器件，包括设置有包括多个存储单元的主存储单元阵列的存储单元阵列和包括多个虚拟存储单元的虚拟列，虚设读出电流控制部，被配置为控制虚拟的当前值 该虚拟存储单元的读出电流使得当前值在存储单元的第一和第二状态中的读出电流的当前值之间变化，以及设置有读出放大器的感测部分，该读出放大器被配置为接收读出电流 第一状态和第二状态之一，或虚拟读出电流作为输入，将这些电流彼此进行比较，并输出电流。
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公开(公告)号：US07691561B2
公开(公告)日：2010-04-06
申请号：US11773656
申请日：2007-07-05
CPC分类号： G03F7/0397 , Y10S430/108 , Y10S430/111
摘要： In a positive resist composition comprising (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) a photoacid generator, component (A) is a polymer of formula (1) wherein R1 is H, methyl or trifluoromethyl, R2 and R3 are alkyl, R4 is a monovalent hydrocarbon group, X1 is O, S or CH2CH2, X2 is O, S, CH2 or CH2CH2, n is 1 or 2, a and b each are from 0.01 to less than 1, c, d1 and d2 each are from 0 to less than 1, and a+b+c+d1+d2=1. The resist composition forms a pattern with high rectangularity at an enhanced resolution when processed by ArF lithography.
摘要翻译： 在包含（A）在酸的作用下变得可溶于碱性显影剂的树脂组分和（B）光酸产生剂的正型抗蚀剂组合物中，组分（A）是式（1）的聚合物，其中R 1是H， 甲基或三氟甲基，R 2和R 3是烷基，R 4是一价烃基，X 1是O，S或CH 2 CH 2，X 2是O，S，CH 2或CH 2 CH 2，n是1或2，a和b各自为0.01至少 1，c，d1和d2各自为0至小于1，a + b + c + d1 + d2 = 1。 当通过ArF光刻处理时，抗蚀剂组合物以增强的分辨率形成具有高矩形性的图案。
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公开(公告)号：US20090010085A1
公开(公告)日：2009-01-08
申请号：US12165720
申请日：2008-07-01
申请人： Takehiko Hojo , Tomohiro Kobayashi , Tetsuya Amano
发明人： Takehiko Hojo , Tomohiro Kobayashi , Tetsuya Amano
CPC分类号： G11C17/18 , G11C17/16 , G11C17/165 , G11C29/027 , G11C29/785 , G11C29/802
摘要： A semiconductor integrated circuit device includes a first fuse circuit, a second fuse circuit, and a control signal generating circuit which sends a first control signal and executes program such that the resistance value of the first fuse circuit becomes greater than the resistance value of the second fuse circuit, and sends a second control signal and executes reprogram such that the resistance value of the second fuse circuit becomes greater than the resistance value of the first fuse circuit.
摘要翻译： 半导体集成电路器件包括第一熔丝电路，第二熔丝电路和控制信号发生电路，其发送第一控制信号并执行程序，使得第一熔丝电路的电阻值变得大于第二熔丝电路的电阻值 熔丝电路，并发送第二控制信号并执行重新编程，使得第二熔丝电路的电阻值变得大于第一熔丝电路的电阻值。
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