Resist composition and patterning process using the same
    41.
    发明申请
    Resist composition and patterning process using the same 有权
    抗蚀剂组成和图案化工艺使用相同

    公开(公告)号:US20070231738A1

    公开(公告)日:2007-10-04

    申请号:US11730289

    申请日:2007-03-30

    IPC分类号: G03C1/00

    摘要: There is disclosed a resist composition comprising, at least, a polymer including repeating units represented by the following general formula (1). There can-be provided a resist composition that has a good barrier property against water, prevents resist components from leaching to water, has high receding contact angle against water, does not require a protective film, has an excellent process applicability, suitable for the liquid immersion lithography and makes it possible to form micropatterns with high precision.

    摘要翻译: 公开了一种抗蚀剂组合物,其至少包含由以下通式(1)表示的重复单元的聚合物。 可以提供对水具有良好的阻隔性的抗蚀剂组合物,防止抗蚀剂成分浸出到水中,对水具有高后退接触角,不需要保护膜,具有优异的工艺适用性,适用于液体 浸没式光刻技术,可以高精度地形成微图案。

    Positive resist compositions and patterning process
    42.
    发明授权
    Positive resist compositions and patterning process 有权
    正极抗蚀剂组成和图案化工艺

    公开(公告)号:US07255973B2

    公开(公告)日:2007-08-14

    申请号:US11101568

    申请日:2005-04-08

    摘要: A polymer comprising units derived from an exo-form ester and units derived from an ester having two hexafluoroisopropanol groups is used as a base resin to formulate a positive resist composition which, when exposed and developed by photolithography, is minimized in line edge roughness by swelling during development and residue after development, and improved in adhesion.

    摘要翻译: 使用包含衍生自外型酯的单体和由具有两个六氟异丙醇基团的酯衍生的单元的聚合物作为基础树脂,以配制正型抗蚀剂组合物,其通过光刻曝光和显影时通过溶胀使线边缘粗糙度最小化 在开发过程中和残渣发育后,粘附性得到改善。

    Photoacid generators, chemically amplified resist compositions, and patterning process
    43.
    发明授权
    Photoacid generators, chemically amplified resist compositions, and patterning process 有权
    光酸发生剂,化学放大抗蚀剂组合物和图案化工艺

    公开(公告)号:US07235343B2

    公开(公告)日:2007-06-26

    申请号:US10842719

    申请日:2004-05-11

    IPC分类号: G03F7/031

    摘要: Photoacid generators have formula (1) wherein R1 and R2 are alkyl, or R1 and R2, taken together, may form a C4–C6 ring structure with sulfur, R is hydrogen or alkyl, R′ is hydrogen, alkyl, alkoxyl or nitro, n is 1 to 6, and Y− is alkylsulfonate, arylsulfonate, bisalkylsulfonylimide or trisalkylsulfonylmethide. Chemically amplified resist compositions comprising the same have improved resolution, thermal stability, storage stability and minimized line edge roughness

    摘要翻译: 光酸产生剂具有式(1),其中R 1和R 2是烷基,或R 1和R 2, 一起可以与硫形成C 4 -C 6 -C 6环结构,R是氢或烷基,R'是氢,烷基,烷氧基或硝基,n是 1至6,Y - 是烷基磺酸酯,芳基磺酸酯,双烷基磺酰亚胺或三烷基磺酰基甲基。 包含该化合物的抗蚀剂组合物具有改进的分辨率,热稳定性,储存稳定性和最小化线边缘粗糙度

    Resist composition and patterning process using the same
    44.
    发明授权
    Resist composition and patterning process using the same 有权
    抗蚀剂组成和图案化工艺使用相同

    公开(公告)号:US07771913B2

    公开(公告)日:2010-08-10

    申请号:US11730289

    申请日:2007-03-30

    摘要: There is disclosed a resist composition comprising, at least, a polymer including repeating units represented by the following general formula (1). There can be provided a resist composition that has a good barrier property against water, prevents resist components from leaching to water, has high receding contact angle against water, does not require a protective film, has an excellent process applicability, suitable for the liquid immersion lithography and makes it possible to form micropatterns with high precision.

    摘要翻译: 公开了一种抗蚀剂组合物,其至少包含由以下通式(1)表示的重复单元的聚合物。 可以提供对水具有良好的阻隔性的抗蚀剂组合物,防止抗蚀剂成分浸出水,与水的后退接触角高,不需要保护膜,具有优异的工艺适用性,适用于液浸 光刻,并且可以以高精度形成微图案。

    Positive resist compositions and patterning process
    46.
    发明申请
    Positive resist compositions and patterning process 有权
    正极抗蚀剂组成和图案化工艺

    公开(公告)号:US20050227173A1

    公开(公告)日:2005-10-13

    申请号:US11101568

    申请日:2005-04-08

    IPC分类号: G03C1/492 G03F7/004 G03F7/039

    摘要: A polymer comprising units derived from an exo-form ester and units derived from an ester having two hexafluoroisopropanol groups is used as a base resin to formulate a positive resist composition which, when exposed and developed by photolithography, is minimized in line edge roughness by swelling during development and residue after development, and improved in adhesion.

    摘要翻译: 使用包含衍生自外型酯的单体和由具有两个六氟异丙醇基团的酯衍生的单元的聚合物作为基础树脂,以配制正型抗蚀剂组合物,其通过光刻曝光和显影时通过溶胀使线边缘粗糙度最小化 在开发过程中和残渣发育后,粘附性得到改善。