Current detection circuit
    41.
    发明授权
    Current detection circuit 有权
    电流检测电路

    公开(公告)号:US07807956B2

    公开(公告)日:2010-10-05

    申请号:US12254470

    申请日:2008-10-20

    IPC分类号: H01J40/14

    CPC分类号: G01J1/44 G01R19/0092

    摘要: A current detection circuit detects photoelectric current that flows through a phototransistor, and outputs a current, which is proportional to the photoelectric current, via an output terminal. An input-side transistor is a PNP bipolar transistor, and is provided on a current path for the phototransistor. Output-side transistors are PNP bipolar transistors. The base terminals thereof are connected to that of the input-side transistor so as to form a common base terminal, and the emitter terminals thereof are connected to that of the input-side transistor so as to form a common emitter terminal, thereby forming a current mirror circuit. Each of first switches is provided between the collector of the corresponding output-side transistor and an output terminal. Each of second switches is provided between the collector of the corresponding output-side transistor and the ground terminal. A control unit controls the ON/OFF operations of the first switches and the second switches.

    摘要翻译: 电流检测电路检测流过光电晶体管的光电流,并通过输出端输出与光电流成比例的电流。 输入侧晶体管是PNP双极晶体管,并且设置在用于光电晶体管的电流路径上。 输出侧晶体管是PNP双极晶体管。 其基极连接到输入侧晶体管的基极以形成公共基极,并且其发射极端子连接到输入侧晶体管的发射极端子,以形成公共发射极端子,从而形成 电流镜电路。 每个第一开关设置在相应的输出侧晶体管的集电极和输出端之间。 每个第二开关设置在相应的输出侧晶体管的集电极和接地端子之间。 控制单元控制第一开关和第二开关的ON / OFF操作。

    PHOSPHOR FILM AND METHOD OF PRODUCING THE PHOSPHOR FILM
    42.
    发明申请
    PHOSPHOR FILM AND METHOD OF PRODUCING THE PHOSPHOR FILM 审中-公开
    磷光体膜和生产磷光体膜的方法

    公开(公告)号:US20100221420A1

    公开(公告)日:2010-09-02

    申请号:US12779648

    申请日:2010-05-13

    IPC分类号: B05D5/06

    摘要: A phosphor film high in efficiency and less in luminescence irregularity and a method of producing the phosphor film are provided. The phosphor film includes a zinc sulfide compound containing an additive element(s). The additive element is at least one element selected from the group consisting of Ag, Cu and Au; the concentration of the additive element is 0.2 mol % or more and 5 mol % or less with respect to Zn; and the film thickness of the phosphor film is 10 nm or more and 2 um or less.

    摘要翻译: 提供了效率高,发光不均匀性低的荧光体膜以及荧光体膜的制造方法。 荧光体膜包括含有添加元素的硫化锌化合物。 添加元素是选自Ag,Cu和Au中的至少一种元素; 相对于Zn,添加元素的浓度为0.2摩尔%以上且5摩尔%以下。 荧光体膜的膜厚为10nm以上且2μm以下。

    Light emitting device and method of producing a light emitting device
    43.
    发明授权
    Light emitting device and method of producing a light emitting device 有权
    发光装置及其制造方法

    公开(公告)号:US07768031B2

    公开(公告)日:2010-08-03

    申请号:US11677251

    申请日:2007-02-21

    IPC分类号: H01L33/26 H05B33/14

    摘要: To provide a DC drive type inorganic light emitting device excellent in luminous efficiency, provided is a light emitting device, including: a substrate; and a first layer and a second layer laminated on the substrate, in which the second layer is formed of a first portion containing Zn and at least one element chosen from S and Se as its constituent elements; and a second portion containing at least one element chosen from Cu and Ag and at least one element chosen from S and Se as its constituent elements; the first layer is made of a light emitting layer formed of at least one element chosen from S and Se and of Zn; and, in the second layer, the second portion has a cross section parallel to the substrate which tapers toward the first layer.

    摘要翻译: 为了提供发光效率优异的直流驱动型无机发光装置,提供了一种发光装置,包括:基板; 以及层叠在所述基板上的第一层和第二层,其中所述第二层由包含Zn的第一部分和选自S和Se的至少一种元素作为其构成元素形成; 和含有选自Cu和Ag中的至少一种元素的第二部分和选自S和Se的至少一种元素作为其组成元素; 第一层由由至少一种选自S和Se的元素和Zn形成的发光层制成; 并且在第二层中,第二部分具有平行于基板的横截面朝向第一层逐渐变细的横截面。

    AMORPHOUS OXIDE AND FIELD EFFECT TRANSISTOR
    44.
    发明申请
    AMORPHOUS OXIDE AND FIELD EFFECT TRANSISTOR 有权
    非晶氧化物和场效应晶体管

    公开(公告)号:US20100140611A1

    公开(公告)日:2010-06-10

    申请号:US12597934

    申请日:2008-05-22

    IPC分类号: H01L29/22 H01L29/786

    CPC分类号: H01L29/7869 H01L29/247

    摘要: In a field effect transistor, a channel layer of the field effect transistor is composed of an amorphous oxide including In, Zn, N and O, an atomic composition ratio of N to N and O (N/(N+O)) in the amorphous oxide is equal to or larger than 0.01 atomic percent and equal to or smaller than 3 atomic percent, and the amorphous oxide does not include Ga, or, in a case where the amorphous oxide includes Ga, the number of Ga atoms contained in the amorphous oxide is smaller than the number of N atoms.

    摘要翻译: 在场效应晶体管中,场效应晶体管的沟道层由包括In,Zn,N和O的无定形氧化物,N与N的原子组成比和O(N /(N + O))的原子组成比组成 无定形氧化物等于或大于0.01原子%且等于或小于3原子%,并且非晶氧化物不包括Ga,或者在非晶氧化物包括Ga的情况下,包含在 无定形氧化物小于N原子数。

    Thin-film transistor and thin-film diode having amorphous-oxide semiconductor layer
    45.
    发明授权
    Thin-film transistor and thin-film diode having amorphous-oxide semiconductor layer 有权
    具有非晶氧化物半导体层的薄膜晶体管和薄膜二极管

    公开(公告)号:US07453087B2

    公开(公告)日:2008-11-18

    申请号:US11514190

    申请日:2006-09-01

    申请人: Tatsuya Iwasaki

    发明人: Tatsuya Iwasaki

    IPC分类号: H01L29/04

    CPC分类号: H01L29/7869

    摘要: A thin-film transistor including a channel layer being formed of an oxide semiconductor transparent to visible light and having a refractive index of nx, a gate-insulating layer disposed on one face of the channel layer, and a transparent layer disposed on the other face of the channel layer and having a refractive index of nt, where there is a relationship of nx>nt. A thin-film transistor including a substrate having a refractive index of no, a transparent layer disposed on the substrate and having a refractive index of nt, and a channel layer disposed on the transparent layer and having a refractive index of nx, where there is a relationship of nx>nt>no.

    摘要翻译: 一种薄膜晶体管,包括由对可见光透明且具有折射率nx的氧化物半导体形成的沟道层,设置在沟道层的一个面上的栅极绝缘层和设置在另一个面上的透明层 的沟道层,折射率为nt,其中nx> nt的关系。 一种薄膜晶体管,包括折射率为no的衬底,设置在衬底上的折射率为nt的透明层,以及设置在透明层上并且折射率为nx的沟道层,其中存在 nx> nt> no的关系。

    Color image pickup device and color light-receiving device
    46.
    发明授权
    Color image pickup device and color light-receiving device 有权
    彩色图像拾取装置和彩色光接收装置

    公开(公告)号:US07129466B2

    公开(公告)日:2006-10-31

    申请号:US10428749

    申请日:2003-05-05

    申请人: Tatsuya Iwasaki

    发明人: Tatsuya Iwasaki

    IPC分类号: H01L31/00

    摘要: A light-receiving device comprises, on a substrate, a first light-receiving part for detecting light of a first wavelength range, and a second light-receiving part for detecting light of a second wavelength range. At least a part of incident light is transmitted through the first light-receiving part and then received by the second light-receiving part. The central wavelength of the first wavelength range is longer than the central wavelength of the second wavelength range, and the first light-receiving part is composed of an organic semiconductor having an absorption spectral maximum in the first wavelength range.

    摘要翻译: 光接收装置在基板上包括用于检测第一波长范围的光的第一光接收部分和用于检测第二波长范围的光的第二光接收部分。 入射光的至少一部分透过第一光接收部,然后被第二光接收部接收。 第一波长范围的中心波长比第二波长范围的中心波长长,第一受光部由在第一波长范围内具有吸收光谱最大值的有机半导体构成。

    Method of manufacturing and adjusting electron source array
    47.
    发明授权
    Method of manufacturing and adjusting electron source array 失效
    制造和调整电子源阵列的方法

    公开(公告)号:US06231412B1

    公开(公告)日:2001-05-15

    申请号:US08718744

    申请日:1996-09-18

    IPC分类号: H01J902

    CPC分类号: H01J9/027 H01J2329/00

    摘要: In an electron source having a plurality of surfaceconduction electron-emitting devices, the electrical characteristics of the surfaceconduction electron-emitting devices are made, controllable, and uniform. For this purpose, the electron emission characteristic of a selected surfaceconduction electron-emitting device is adjusted with a correction process of applying a voltage higher than a practical driving voltage to the device.

    摘要翻译: 在具有多个表面积电子发射器件的电子源中,表面传导电子发射器件的电特性被制成,可控制和均匀。 为此,通过向设备施加比实际驱动电压高的电压的校正处理来调整所选择的表面传导电子发射器件的电子发射特性。

    Interlock apparatus for a transfer machine
    48.
    发明授权
    Interlock apparatus for a transfer machine 失效
    用于转印机的联锁装置

    公开(公告)号:US5963449A

    公开(公告)日:1999-10-05

    申请号:US904848

    申请日:1997-08-01

    摘要: An interlock apparatus for a transfer machine includes a drive unit for driving the arms of a transfer machine for transferring a substrate such as an LCD substrate. The apparatus also includes a control unit having a monitor function for monitoring a parameter representing the movement condition of the arms and stopping the drive unit when the parameter exceed a predetermined value. The apparatus also includes a switching function for selectively switching the predetermined value between a teaching mode in which the position of the arm is controlled and a practical operation mode in which the transfer machine is actually operated.

    摘要翻译: 用于转印机的互锁装置包括驱动单元,用于驱动用于转移诸如LCD基板的基板的转印机的臂。 该装置还包括具有监视功能的控制单元,用于监视表示臂的运动状态的参数,并且当参数超过预定值时停止驱动单元。 该装置还包括切换功能,用于在控制臂的位置的教学模式和实际操作转移机器的实际操作模式之间选择性地切换预定值。

    RADIATION DETECTOR
    49.
    发明申请
    RADIATION DETECTOR 有权
    辐射探测器

    公开(公告)号:US20130026374A1

    公开(公告)日:2013-01-31

    申请号:US13552074

    申请日:2012-07-18

    IPC分类号: G01T1/202

    摘要: Provided is a radiation detector, including: a two-dimensional light receiving element including a plurality of pixels; and a scintillator layer having multiple scintillator crystals two-dimensionally arranged on a light receiving surface of the two-dimensional light receiving element, in which: the scintillator crystal includes two crystal phases, which are a first crystal phase including a material including a plurality of columnar crystals extending in a direction perpendicular to the light receiving surface of the two-dimensional light receiving element and having a refractive index n1, and a second crystal phase including a material existing between the plurality of columnar crystals and having a refractive index n2; and a material having a refractive index n3 is placed between adjacent scintillator crystals, the refractive index n3 satisfying a relationship of one of n1≦n3≦n2 and n2≦n3≦n1.

    摘要翻译: 提供一种辐射检测器,包括:包括多个像素的二维光接收元件; 以及具有二维配置在二维光接收元件的受光面上的多个闪烁器晶体的闪烁器层,其中:所述闪烁体晶体包括两个晶相,所述晶体相是包括包含多个 柱状晶体在垂直于二维光接收元件的光接收表面的方向上延伸并具有折射率n1,第二晶相包括存在于多个柱状晶体之间并具有折射率n2的材料; 折射率n3的材料被放置在相邻的闪烁体晶体之间,折射率n3满足n1和n1E之间的关系; n3和n1E; n2和n2和n1E之间的关系; n3和n1E; n1。

    RADIATION DETECTING DEVICE
    50.
    发明申请
    RADIATION DETECTING DEVICE 有权
    辐射检测装置

    公开(公告)号:US20130022169A1

    公开(公告)日:2013-01-24

    申请号:US13544096

    申请日:2012-07-09

    IPC分类号: G01T1/20 G01N23/04 B82Y15/00

    CPC分类号: G01T1/202

    摘要: Provided is a radiation detecting device, including: a scintillator which emits light when radiation is irradiated thereto; and a photosensor array having light receiving elements for receiving the emitted light which are two-dimensionally arranged, in which: the scintillator has a phase separation structure for propagating the light emitted inside the scintillator in a light propagating direction, the phase separation structure being formed by embedding multiple columnar portions formed of a first material in a second material; the radiation is irradiated to the scintillator from a direction which is not in parallel to the light propagating direction; and the light emitted inside the scintillator is propagated through the scintillator in the light propagating direction and is received by the photosensor array which is placed so as to face an end face of the scintillator.

    摘要翻译: 本发明提供一种放射线检测装置,其特征在于,包括:闪光体,其在对其照射时发光; 以及具有用于接收二维布置的发射光的光接收元件的光传感器阵列,其中:闪烁体具有用于在光传播方向上传播闪烁体内的光的相分离结构,形成相分离结构 通过在第二材料中嵌入由第一材料形成的多个柱状部分; 辐射从不与光传播方向平行的方向照射到闪烁体; 并且在闪烁体内发射的光在光传播方向上传播通过闪烁体,并被放置成面对闪烁体的端面的光电传感器阵列接收。