公开(公告)号：US06336054B1

公开(公告)日：2002-01-01

申请号：US09291045

申请日：1999-04-14

申请人： Yoshiharu Ota ,  Masaaki Yoshida ,  Shinya Tanoue ,  Tatsuya Iwasaki

发明人： Yoshiharu Ota ,  Masaaki Yoshida ,  Shinya Tanoue ,  Tatsuya Iwasaki

IPC分类号： G06F1900

CPC分类号： H01L21/67748 ,  H01L21/67242 ,  H01L21/67259

摘要： A processing system for processing a substrate. The processing system includes a plurality of processing machines, a machine movable along a transfer path for transferring the substrate to the machines, a drive unit for driving the machine, and a control unit. The control unit includes a memory for storing a teaching threshold in a teaching mode and a practical operation threshold in a practical operation mode that is higher than the teaching threshold when a moving parameter of the drive unit exceeds a given value. The control unit also includes a controller monitoring a parameter representing a moving state of the drive unit to stop the drive unit when the parameter exceeds the practical operation threshold in the practical operation mode or when the parameter exceeds the teaching threshold in the teaching mode.

摘要翻译： 一种用于处理衬底的处理系统。 处理系统包括多个处理机器，沿着用于将基板传送到机器的传送路径移动的机器，用于驱动机器的驱动单元和控制单元。 控制单元包括存储器，用于在实际操作模式中存储教学阈值和实际操作阈值，该实际操作模式当驱动单元的移动参数超过给定值时高于教学阈值。 控制单元还包括控制器，当在实践操作模式中参数超过实际操作阈值时或者当教学模式中参数超过教学阈值时，监控表示驱动单元的移动状态的参数以停止驱动单元。

公开(公告)号：US5963449A

公开(公告)日：1999-10-05

申请号：US904848

申请日：1997-08-01

申请人： Yoshiharu Ota ,  Masaaki Yoshida ,  Shinya Tanoue ,  Tatsuya Iwasaki

发明人： Yoshiharu Ota ,  Masaaki Yoshida ,  Shinya Tanoue ,  Tatsuya Iwasaki

IPC分类号： B65G49/07 ,  H01L21/00 ,  H01L21/677 ,  G06F19/00

CPC分类号： H01L21/67748 ,  H01L21/67242 ,  H01L21/67259

摘要： An interlock apparatus for a transfer machine includes a drive unit for driving the arms of a transfer machine for transferring a substrate such as an LCD substrate. The apparatus also includes a control unit having a monitor function for monitoring a parameter representing the movement condition of the arms and stopping the drive unit when the parameter exceed a predetermined value. The apparatus also includes a switching function for selectively switching the predetermined value between a teaching mode in which the position of the arm is controlled and a practical operation mode in which the transfer machine is actually operated.

摘要翻译： 用于转印机的互锁装置包括驱动单元，用于驱动用于转移诸如LCD基板的基板的转印机的臂。 该装置还包括具有监视功能的控制单元，用于监视表示臂的运动状态的参数，并且当参数超过预定值时停止驱动单元。 该装置还包括切换功能，用于在控制臂的位置的教学模式和实际操作转移机器的实际操作模式之间选择性地切换预定值。

公开(公告)号：US11007896B2

公开(公告)日：2021-05-18

申请号：US15568193

申请日：2016-06-15

申请人： Masaaki Yoshida ,  Hideo Yanagita

发明人： Masaaki Yoshida ,  Hideo Yanagita

IPC分类号： B60L58/13 ,  B60L58/21 ,  H02J7/00 ,  H01M10/44 ,  H02J7/14 ,  B60L3/00 ,  B60L58/16 ,  B60L50/16 ,  H01M4/58 ,  H01M10/0525 ,  H01M10/46 ,  H01M10/48 ,  B60W20/00 ,  H01M10/052 ,  H01M4/02 ,  B60L11/18

摘要： A storage apparatus stores output property data including groups of residual capacities of a secondary battery and output densities corresponding to the residual capacities. In the output property data, both a difference between a residual capacity of a group that includes an extreme value in the output densities and a residual capacity of a group that includes an output density that immediately precedes the extreme value, and a difference between the residual capacity of the group that includes the extreme value in the output densities and a residual capacity of a group that includes an output density that immediately follows the extreme value are less than a difference between output densities of other groups adjacent to each other.

公开(公告)号：US07982531B2

公开(公告)日：2011-07-19

申请号：US11915440

申请日：2007-03-20

申请人： Masaaki Yoshida ,  Hiroaki Nakanishi

发明人： Masaaki Yoshida ,  Hiroaki Nakanishi

IPC分类号： G05F3/24 ,  H01L27/088

CPC分类号： H01L27/0883

摘要： A reference voltage generating circuit for generating a reference voltage includes MOSFETs connected to each other. At least one of the MOSFETs includes a control gate and a floating gate that is made hole-rich or discharged by ultraviolet irradiation, and the reference voltage generating circuit is configured to output the difference between threshold voltages of a pair of the MOSFETs as the reference voltage.

摘要翻译： 用于产生参考电压的参考电压产生电路包括彼此连接的MOSFET。 MOSFET中的至少一个包括通过紫外线照射使空穴富集或放电的控制栅极和浮置栅极，并且参考电压产生电路被配置为输出一对MOSFET的阈值电压之间的差作为参考 电压。

公开(公告)号：US07924400B2

公开(公告)日：2011-04-12

申请号：US12067925

申请日：2006-09-25

申请人： Nobuyuki Kohda ,  Masaaki Yoshida ,  Takayuki Yajima ,  Hiromitsu Tsuji

发明人： Nobuyuki Kohda ,  Masaaki Yoshida ,  Takayuki Yajima ,  Hiromitsu Tsuji

IPC分类号： G03B27/52 ,  G03B27/42

CPC分类号： G01N1/02 ,  G01N2001/028 ,  G01N2013/003 ,  G03F7/2041 ,  G03F7/70341 ,  G03F7/70608

摘要： A method for measuring a liquid immersion lithography soluble fraction in an organic film including a mounting step of mounting a droplet of a liquid immersion medium for liquid immersion lithography on a surface of an organic film formed on a substrate; and a transfer step of transferring a component in the organic film into the droplet.

摘要翻译： 一种用于测量有机膜中的液浸光刻可溶部分的方法，包括将用于液浸光刻的液浸介质液滴安装在形成在基板上的有机膜的表面上的安装步骤; 以及将有机膜中的成分转移到液滴中的转印步骤。

公开(公告)号：US20110054184A1

公开(公告)日：2011-03-03

申请号：US12870439

申请日：2010-08-27

申请人： Masaaki Yoshida ,  Mai Sugawara ,  Jun Koshiyama

发明人： Masaaki Yoshida ,  Mai Sugawara ,  Jun Koshiyama

IPC分类号： C07F7/00 ,  C09K3/00

CPC分类号： C07F7/10 ,  H01L21/0271 ,  H01L21/306 ,  H01L21/3105

摘要： The object is to provide a surface treatment agent that can effectively prevent pattern collapse of an inorganic pattern or resin pattern provided on a substrate, and a surface treatment method using such a surface treatment agent. In addition, as another object, the present invention has an object of providing a surface treatment agent that can carry out silylation treatment to a high degree on the surface of a substrate, and a surface treatment method using such a surface treatment agent. The surface treatment agent used in the surface treatment of a substrate contains a silylation agent and a silylated heterocyclic compound.

摘要翻译： 本发明的目的是提供一种表面处理剂，其能够有效地防止在基板上设置的无机图案或树脂图案的图案塌陷，以及使用这种表面处理剂的表面处理方法。 此外，作为另一个目的，本发明的目的是提供一种能够在基材表面上高度进行甲硅烷基化处理的表面处理剂和使用这种表面处理剂的表面处理方法。 用于底物表面处理的表面处理剂含有甲硅烷基化剂和甲硅烷基化杂环化合物。

公开(公告)号：US20100124720A1

公开(公告)日：2010-05-20

申请号：US11995291

申请日：2006-07-05

申请人： Keita Ishiduka ,  Kotaro Endo ,  Masaaki Yoshida

发明人： Keita Ishiduka ,  Kotaro Endo ,  Masaaki Yoshida

IPC分类号： G03F7/20 ,  G03F7/004

CPC分类号： G03F7/11 ,  G03F7/70341 ,  G03F7/70958 ,  G03F7/70983

摘要： This invention provides a material for protective film formation, comprising at least an alkali soluble polymer comprising at least one of constitutional units represented by general formulae (I) and (II) and an alcoholic solvent. The material for protective film formation can simultaneously prevent a deterioration in a resist film during liquid immersion exposure and a deterioration in a liquid for liquid immersion exposure used and, at the same time, can form a resist pattern with a good shape without the need to increase the number of treatment steps.

摘要翻译： 本发明提供一种用于保护膜形成的材料，其至少包含含有由通式（I）和（II）表示的结构单元和醇溶剂中的至少一种的碱溶性聚合物。 用于保护膜形成的材料可以同时防止液浸期间的抗蚀剂膜的劣化和用于液浸的液体的劣化，并且同时可以形成具有良好形状的抗蚀剂图案，而不需要 增加治疗步骤的数量。

公开(公告)号：US20090272973A1

公开(公告)日：2009-11-05

申请号：US11794649

申请日：2006-11-22

申请人： Masaaki Yoshida ,  Satoshi Kouno

发明人： Masaaki Yoshida ,  Satoshi Kouno

IPC分类号： H01L23/58 ,  H01L23/544

CPC分类号： H01L22/34 ,  H01L22/32 ,  H01L27/0207 ,  H01L2224/02166 ,  H01L2224/05554

摘要： The present invention discloses a semiconductor wafer having a scribe line dividing the semiconductor wafer into a matrix of plural semiconductor chips. The semiconductor wafer includes a polysilicon layer, a poly-metal interlayer insulation film formed on the polysilicon layer, and a first metal wiring layer formed on the poly-metal interlayer insulation film. The semiconductor wafer includes a process-monitor electrode pad formed on a dicing area of the scribe line. The process-monitor electrode pad has a width greater than the width of the dicing area. The process-monitor electrode pad includes a contact hole formed in the poly-metal insulation film for connecting the first metal wiring layer to the polysilicon layer.

摘要翻译： 本发明公开了一种具有将半导体晶片分割为多个半导体芯片的矩阵的划线的半导体晶片。 半导体晶片包括形成在多晶硅层上的多晶硅层，多金属层间绝缘膜和形成在多金属层间绝缘膜上的第一金属布线层。 半导体晶片包括形成在划线的切割区域上的处理监测电极焊盘。 处理监视器电极焊盘的宽度大于切割区域的宽度。 处理监视电极焊盘包括形成在多金属绝缘膜中的接触孔，用于将第一金属布线层连接到多晶硅层。

公开(公告)号：US07592122B2

公开(公告)日：2009-09-22

申请号：US10553315

申请日：2004-04-15

申请人： Toshiyuki Ogata ,  Kotaro Endo ,  Hiromitsu Tsuji ,  Masaaki Yoshida ,  Mitsuru Sato ,  Syogo Matsumaru ,  Hideo Hada

发明人： Toshiyuki Ogata ,  Kotaro Endo ,  Hiromitsu Tsuji ,  Masaaki Yoshida ,  Mitsuru Sato ,  Syogo Matsumaru ,  Hideo Hada

IPC分类号： G03F7/004 ,  C08C19/28

CPC分类号： C07C43/126 ,  C07C43/162 ,  C07C43/1747 ,  C07C69/96 ,  C07C2601/14 ,  C07C2602/42 ,  G03F7/0046 ,  G03F7/0395 ,  G03F7/0397 ,  G03F7/0757 ,  Y10S430/108

摘要： A high-molecular compound and a low-molecular compound or both having an alkali-soluble site (i) wherein at least a part of the alkali-soluble site (i) is protected with (ii) a halogen atom-containing acetal type acid-dissociative, dissolution inhibiting group, as well as a photoresist composition comprising the same. The photoresist composition is highly stable during storage and can give a resist pattern excellent in sectional rectangular shape and having high transparency to an exposure light, particularly a light having a wavelength of 300 nm or less.

摘要翻译： 具有碱溶性部位（i）的高分子化合物和低分子化合物或二者，其中至少一部分碱溶性部位（i）用（ⅱ）含卤原子的缩醛型酸 - 解离，溶解抑制基团，以及包含其的光致抗蚀剂组合物。 光致抗蚀剂组合物在保存期间高度稳定，并且可以得到截面矩形形状优异并且对曝光光，特别是波长为300nm以下的光具有高透明度的抗蚀剂图案。

公开(公告)号：US07579645B2

公开(公告)日：2009-08-25

申请号：US10588479

申请日：2005-12-19

申请人： Masaaki Yoshida

发明人： Masaaki Yoshida

IPC分类号： H01L29/788

CPC分类号： G11C16/30 ,  G11C16/0433 ,  H01L21/823462 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524

摘要： A semiconductor device is disclosed that includes a nonvolatile memory cell having a memory transistor and a selection transistor, and a peripheral circuit transistor. The memory transistor includes a memory gate oxide film that is arranged on a semiconductor substrate, and a floating gate made of polysilicon that is arranged on the memory gate oxide film. The selection transistor is serially connected to the memory transistor and includes a selection gate oxide film that is arranged on the semiconductor substrate, and a selection gate made of polysilicon that is arranged on the selection gate oxide film. The peripheral circuit transistor includes a peripheral circuit gate oxide film that is arranged on the semiconductor substrate, and a peripheral circuit gate made of polysilicon that is arranged on the peripheral circuit gate oxide film. The memory gate oxide film is arranged to be thinner than the peripheral circuit gate oxide film.

摘要翻译： 公开了一种半导体器件，其包括具有存储晶体管和选择晶体管的非易失性存储单元和外围电路晶体管。 存储晶体管包括布置在半导体衬底上的存储栅极氧化膜和布置在存储栅极氧化膜上的由多晶硅制成的浮置栅极。 选择晶体管串联连接到存储晶体管，并且包括布置在半导体衬底上的选择栅极氧化膜以及布置在选择栅氧化膜上的由多晶硅制成的选择栅极。 外围电路晶体管包括布置在半导体衬底上的外围电路栅极氧化膜，以及设置在外围电路栅氧化膜上的由多晶硅制成的外围电路栅极。 存储栅氧化膜被布置成比外围电路栅极氧化膜薄。