公开(公告)号：US08686521B2

公开(公告)日：2014-04-01

申请号：US12716582

申请日：2010-03-03

申请人： Tadaomi Daibou ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Masatoshi Yoshikawa ,  Katsuya Nishiyama ,  Makoto Nagamine ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Tadaomi Daibou ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Masatoshi Yoshikawa ,  Katsuya Nishiyama ,  Makoto Nagamine ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： H01L29/82

CPC分类号： H01L27/228 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  H01L43/08 ,  H01L43/10

摘要： A magnetoresistive element includes a stabilization layer, a nonmagnetic layer, a spin-polarization layer provided between the stabilization layer and the nonmagnetic layer, the spin-polarization layer having magnetic anisotropy in a perpendicular direction, and a magnetic layer provided on a side of the nonmagnetic layer opposite to a side on which the spin-polarization layer is provided. The stabilization layer has a lattice constant smaller than that of the spin-polarization layer in an in-plane direction. The spin-polarization layer contains at least one element selected from a group consisting of cobalt (Co) and iron (Fe), has a body-centered tetragonal (BCT) structure, and has a lattice constant ratio c/a of 1.10 (inclusive) to 1.35 (inclusive) when a perpendicular direction is a c-axis and an in-plane direction is an a-axis.

摘要翻译： 磁阻元件包括稳定层，非磁性层，设置在稳定层和非磁性层之间的自旋极化层，垂直方向具有磁各向异性的自旋极化层，以及设置在 非磁性层与设置有自旋极化层的一侧相反。 稳定层的面内方向的晶格常数小于自旋极化层的晶格常数。 自旋极化层含有选自钴（Co）和铁（Fe）中的至少一种元素，具有体心四方晶（BCT）结构，晶格常数比c / a为1.10（含 ）为1.35（含），当垂直方向为c轴且面内方向为a轴时。

公开(公告)号：US08036025B2

公开(公告)日：2011-10-11

申请号：US12686168

申请日：2010-01-12

申请人： Toshihiko Nagase ,  Masatoshi Yoshkawa ,  Eiji Kitagawa ,  Masahiko Nakayama ,  Tadashi Kai ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Toshihiko Nagase ,  Masatoshi Yoshkawa ,  Eiji Kitagawa ,  Masahiko Nakayama ,  Tadashi Kai ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： H01L43/00

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/08

摘要： A magnetoresistive element which records information by supplying spin-polarized electrons to a magnetic material, includes a first pinned layer which is made of a magnetic material and has a first magnetization directed in a direction perpendicular to a film surface, a free layer which is made of a magnetic material and has a second magnetization directed in the direction perpendicular to the film surface, the direction of the second magnetization reversing by the spin-polarized electrons, and a first nonmagnetic layer which is provided between the first pinned layer and the free layer. A saturation magnetization Ms of the free layer satisfies a relationship 0≦Ms

摘要翻译： 通过向磁性材料提供自旋极化电子来记录信息的磁阻元件包括由磁性材料制成并且具有沿与膜表面垂直的方向的第一磁化的第一固定层，制成的自由层 并且具有在垂直于膜表面的方向上的第二磁化强度，由自旋极化电子反转的第二磁化方向以及设置在第一被钉扎层和自由层之间的第一非磁性层 。 自由层的饱和磁化强度Ms满足关系0＆nlE; Ms <√{平方根超过（）} {Jw /（6＆pgr; At）}。 Jw是写入电流密度，t是自由层的厚度，A是常数。

公开(公告)号：US07596015B2

公开(公告)日：2009-09-29

申请号：US11832203

申请日：2007-08-01

申请人： Eiji Kitagawa ,  Toshihiko Nagase ,  Masatoshi Yoshikawa ,  Katsuya Nishiyama ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Eiji Kitagawa ,  Toshihiko Nagase ,  Masatoshi Yoshikawa ,  Katsuya Nishiyama ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  B82Y25/00 ,  H01F10/123 ,  H01F10/3236 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/08 ,  Y10S977/935

摘要： A magnetoresistive element includes a free layer which contains a magnetic material and has an fct crystal structure with a (001) plane oriented, the free layer having a magnetization which is perpendicular to a film plane and has a direction to be changeable by spin-polarized electrons, a first nonmagnetic layer and a second nonmagnetic layer which sandwich the free layer and have one of a tetragonal crystal structure and a cubic crystal structure, and a fixed layer which is provided on only one side of the free layer and on a surface of the first nonmagnetic layer opposite to a surface with the free layer and contains a magnetic material, the fixed layer having a magnetization which is perpendicular to a film plane and has a fixed direction.

摘要翻译： 磁阻元件包括含有磁性材料并具有（001）面定向的fct晶体结构的自由层，该自由层具有垂直于膜平面的磁化并且具有可通过自旋极化而变化的方向 电子，第一非磁性层和夹层自由层并具有四方晶体结构和立方晶体结构中的一个的第一非磁性层，以及固定层，其仅设置在自由层的一侧上，并且在 所述第一非磁性层与具有所述自由层的表面相对并且包含磁性材料，所述固定层具有垂直于膜平面且具有固定方向的磁化。

公开(公告)号：US20090080124A1

公开(公告)日：2009-03-26

申请号：US12210496

申请日：2008-09-15

申请人： Masatoshi Yoshikawa ,  Tadaomi Daibou ,  Eiji Kitagawa ,  Toshihiko Nagase ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Masatoshi Yoshikawa ,  Tadaomi Daibou ,  Eiji Kitagawa ,  Toshihiko Nagase ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： G11B5/127

CPC分类号： H01L27/228 ,  B82Y25/00 ,  G01R33/093 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L43/08 ,  H01L43/10

摘要： A magnetoresistive element includes: a first magnetization reference layer having magnetization perpendicular to a film plane, a direction of the magnetization being invariable in one direction; a magnetization free layer having magnetization perpendicular to the film plane, a direction of the magnetization being variable; a first intermediate layer provided between the first magnetization reference layer and the magnetization free layer; a magnetic phase transition layer provided on an opposite side of the magnetization free layer from the first intermediate layer, the magnetic phase transition layer being magnetically coupled to the magnetization free layer, and being capable of bidirectionally performing a magnetic phase transition between an antiferromagnetic material and a ferromagnetic material; and an excitation layer provided on an opposite side of the magnetic phase transition layer from the magnetization free layer, and causing the magnetic phase transition layer to perform the magnetic phase transition from the antiferromagnetic material to the ferromagnetic material.

摘要翻译： 磁阻元件包括：具有垂直于膜平面的磁化的第一磁化参考层，磁化方向在一个方向上是不变的; 具有垂直于膜平面的磁化的无磁化层，磁化方向可变; 设置在所述第一磁化参考层和所述无磁化层之间的第一中间层; 磁性相变层，其设置在与第一中间层的磁化自由层的相对侧上，磁性相变层被磁耦合到无磁化层，并且能够双向地执行反铁磁材料和 铁磁材料; 以及激励层，其设置在与所述磁化自由层相反的所述磁性相变层的相反侧，并且使所述磁性相变层进行从所述反铁磁材料到所述铁磁性材料的磁相变。

公开(公告)号：US20080291585A1

公开(公告)日：2008-11-27

申请号：US11844069

申请日：2007-08-23

申请人： Masatoshi Yoshikawa ,  Tadashi Kai ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Masatoshi Yoshikawa ,  Tadashi Kai ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： G11B5/33

CPC分类号： H01F10/3254 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/16 ,  H01F41/307 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

摘要： It is made possible to provide a magnetoresistive effect element that can reverse magnetization direction with a low current, having low areal resistance (RA) and a high TMR ratio. A magnetoresistive effect element includes: a film stack that includes a magnetization free layer including a magnetic layer in which magnetization direction is changeable, a magnetization pinned layer including a magnetic layer in which magnetization direction is pinned, and an intermediate layer provided between the magnetization free layer and the magnetization pinned layer, the intermediate layer being an oxide containing boron (B) and an element selected from the group consisting of Ca, Mg, Sr, Ba, Ti, and Sc. Current is applied bidirectionally between the magnetization pinned layer and the magnetization free layer through the intermediate layer, so that the magnetization of the magnetization free layer is reversible.

摘要翻译： 可以提供具有低电流（RA）和高TMR比的低电流来反向磁化方向的磁阻效应元件。 磁阻效应元件包括：膜堆叠，其包括磁化自由层，其包括其中磁化方向可变的磁性层，包括其中磁化方向被钉扎的磁性层的磁化固定层，以及设置在磁化自由度之间的中间层 层和磁化固定层，中间层是含有硼（B）的氧化物和选自Ca，Mg，Sr，Ba，Ti和Sc的元素。 通过中间层在磁化钉扎层和磁化自由层之间双向施加电流，使得无磁化层的磁化是可逆的。

公开(公告)号：US20070096229A1

公开(公告)日：2007-05-03

申请号：US11551868

申请日：2006-10-23

申请人： Masatoshi Yoshikawa ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Hiroaki Yoda ,  Tatsuya Kishi ,  Masahiko Nakayama

发明人： Masatoshi Yoshikawa ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Hiroaki Yoda ,  Tatsuya Kishi ,  Masahiko Nakayama

IPC分类号： H01L43/00

CPC分类号： H01L43/10 ,  G11C11/16

摘要： A magnetoresistive element includes a magnetic recording layer which records information as a magnetization direction changes upon supplying a bidirectional current in an out-of-plane direction, a magnetic reference layer which has a fixed magnetization direction, and a nonmagnetic layer which is provided between the magnetic recording layer and the magnetic reference layer. The magnetic recording layer includes an interface magnetic layer which is provided in contact with the nonmagnetic layer and has a first magnetic anisotropy energy, and a magnetic stabilizing layer which has a second magnetic anisotropy energy higher than the first magnetic anisotropy energy.

摘要翻译： 磁阻元件包括磁记录层，该磁记录层在沿面外方向提供双向电流时记录磁化方向变化的信息，具有固定的磁化方向的磁性参考层和设置在磁性方向之间的非磁性层 磁记录层和磁参考层。 磁记录层包括与非磁性层接触并具有第一磁各向异性能的界面磁性层和具有高于第一磁各向异性能的第二磁各向异性能的磁稳定层。

公开(公告)号：US07190613B2

公开(公告)日：2007-03-13

申请号：US10862617

申请日：2004-06-08

申请人： Toshihiko Nagase ,  Hiroaki Yoda ,  Masatoshi Yoshikawa ,  Tadashi Kai ,  Tatsuya Kishi ,  Hisanori Aikawa ,  Tomomasa Ueda

发明人： Toshihiko Nagase ,  Hiroaki Yoda ,  Masatoshi Yoshikawa ,  Tadashi Kai ,  Tatsuya Kishi ,  Hisanori Aikawa ,  Tomomasa Ueda

IPC分类号： G11C11/14

CPC分类号： G11C11/16

摘要： An MTJ element has two magnetic layers and a nonmagnetic layer. The resistance of the MTJ element, which varies depending on whether the two magnetic layers are magnetized parallel or antiparallel. In an MRAM adapted to write data into the MTJ element by causing a write wiring to generate induced magnetic flux and consequently changing the direction of magnetization of the recording layer, the MTJ element is a perpendicular MTJ element in which each of the two magnetic layers is magnetized in a direction perpendicular to its plane. The write wiring is placed in a direction perpendicular to the direction of the thickness of the MTJ element and applies a generated magnetic field to the magnetic layers of the MTJ element in the direction in which they are magnetized. Magnetic yokes hold the MTJ element in the direction of its thickness.

摘要翻译： MTJ元件具有两个磁性层和一个非磁性层。 MTJ元件的电阻取决于两个磁性层是平行还是反平行磁化而变化。 在适于通过使写入布线产生感应磁通并因此改变记录层的磁化方向将数据写入MTJ元件的MRAM中，MTJ元件是垂直的MTJ元件，其中两个磁性层中的每一个是 在垂直于其平面的方向上磁化。 写入布线沿垂直于MTJ元件的厚度方向的方向放置，并将产生的磁场施加到MTJ元件的被磁化方向上的磁性层。 磁轭将MTJ元件沿其厚度方向固定。

公开(公告)号：US09165585B2

公开(公告)日：2015-10-20

申请号：US13235237

申请日：2011-09-16

申请人： Eiji Kitagawa ,  Tadaomi Daibou ,  Tadashi Kai ,  Toshihiko Nagase ,  Kenji Noma ,  Hiroaki Yoda

发明人： Eiji Kitagawa ,  Tadaomi Daibou ,  Tadashi Kai ,  Toshihiko Nagase ,  Kenji Noma ,  Hiroaki Yoda

IPC分类号： G11C11/02 ,  G11B5/66 ,  G01R33/09 ,  H01F10/30 ,  G11C11/16

CPC分类号： H01L43/02 ,  G01R33/091 ,  G01R33/093 ,  G11B5/66 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/30 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

摘要： According to one embodiment, a magnetoresistive element includes a recording layer having a variable magnetization direction, a reference layer having an invariable magnetization direction, an intermediate layer provided between the recording layer and the reference layer, and a first buffer layer provided on a surface of the recording layer, which is opposite to a surface of the recording layer where the intermediate layer is provided. The recording layer comprises a first magnetic layer which is provided in a side of the intermediate layer and contains CoFe as a main component, and a second magnetic layer which is provided in a side of the first buffer layer and contains CoFe as a main component, a concentration of Fe in the first magnetic layer being higher than a concentration of Fe in the second magnetic layer. The first buffer layer comprises a nitrogen compound.

摘要翻译： 根据一个实施例，磁阻元件包括具有可变磁化方向的记录层，具有不变磁化方向的参考层，设置在记录层和参考层之间的中间层，以及设置在记录层的表面上的第一缓冲层 该记录层与设置有中间层的记录层的表面相对。 记录层包括设置在中间层的侧面并且包含CoFe作为主要成分的第一磁性层和设置在第一缓冲层的侧面并且包含CoFe作为主要成分的第二磁性层， 第一磁性层中的Fe浓度高于第二磁性层中的Fe浓度。 第一缓冲层包含氮化合物。

公开(公告)号：US08665639B2

公开(公告)日：2014-03-04

申请号：US13407039

申请日：2012-02-28

申请人： Toshihiko Nagase ,  Tadashi Kai ,  Katsuya Nishiyama ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Masahiko Nakayama ,  Makoto Nagamine ,  Shigeto Fukatsu ,  Masatoshi Yoshikawa ,  Hiroaki Yoda

发明人： Toshihiko Nagase ,  Tadashi Kai ,  Katsuya Nishiyama ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Masahiko Nakayama ,  Makoto Nagamine ,  Shigeto Fukatsu ,  Masatoshi Yoshikawa ,  Hiroaki Yoda

IPC分类号： G11C11/00

CPC分类号： H01L43/08 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1659 ,  H01F10/123 ,  H01F10/3236 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01L27/228 ,  H01L43/10

摘要： According to one embodiment, a magnetoresistive element includes a first magnetic layer with a perpendicular and variable magnetization, a second magnetic layer with a perpendicular and invariable magnetization, and a first nonmagnetic layer between the first and second magnetic layer. The first magnetic layer has a laminated structure of first and second ferromagnetic materials. A magnetization direction of the first magnetic layer is changed by a current which pass through the first magnetic layer, the first nonmagnetic layer and the second magnetic layer. A perpendicular magnetic anisotropy of the second ferromagnetic material is smaller than that of the first ferromagnetic material. A film thickness of the first ferromagnetic material is thinner than that of the second ferromagnetic material.

摘要翻译： 根据一个实施例，磁阻元件包括具有垂直和可变磁化的第一磁性层，具有垂直和不变磁化的第二磁性层以及第一和第二磁性层之间的第一非磁性层。 第一磁性层具有第一和第二铁磁材料的叠层结构。 第一磁性层的磁化方向由穿过第一磁性层，第一非磁性层和第二磁性层的电流改变。 第二铁磁材料的垂直磁各向异性小于第一铁磁材料的垂直磁各向异性。 第一铁磁材料的膜厚比第二铁磁材料薄。

公开(公告)号：US08378437B2

公开(公告)日：2013-02-19

申请号：US12248484

申请日：2008-10-09

申请人： Masahiko Nakayama ,  Kay Yakushiji ,  Sumio Ikegawa ,  Shinji Yuasa ,  Tadashi Kai ,  Toshihiko Nagase ,  Minoru Amano ,  Hisanori Aikawa ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Masahiko Nakayama ,  Kay Yakushiji ,  Sumio Ikegawa ,  Shinji Yuasa ,  Tadashi Kai ,  Toshihiko Nagase ,  Minoru Amano ,  Hisanori Aikawa ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： H01L29/82

CPC分类号： H01L27/228 ,  B82Y25/00 ,  G11C11/15 ,  G11C11/1659 ,  G11C11/1675 ,  H01F10/123 ,  H01F10/325 ,  H01F10/3254 ,  H01F10/3286 ,  H01L43/08

摘要： A magnetoresistive effect element includes a reference layer, a recording layer, and a nonmagnetic layer. The reference layer is made of a magnetic material, has an invariable magnetization which is perpendicular to a film surface. The recording layer is made of a magnetic material, has a variable magnetization which is perpendicular to the film surface. The nonmagnetic layer is arranged between the reference layer and the recording layer. A critical diameter which is determined by magnetic anisotropy, saturation magnetization, and switched connection of the recording layer and has a single-domain state as a unique stable state or a critical diameter which has a single-domain state as a unique stable state and is inverted while keeping the single-domain state in an inverting process is larger than an element diameter of the magnetoresistive effect element.

摘要翻译： 磁阻效应元件包括参考层，记录层和非磁性层。 参考层由磁性材料制成，具有垂直于膜表面的不变磁化。 记录层由磁性材料制成，具有垂直于膜表面的可变磁化强度。 非磁性层布置在参考层和记录层之间。 临界直径由磁各向异性，饱和磁化强度和记录层的开关连接确定，并且具有作为独特稳定状态的单畴状态或具有单域状态作为唯一稳定状态的临界直径，并且是 在反转过程中保持单畴状态的反转大于磁阻效应元件的元件直径。