公开(公告)号：US20120008381A1

公开(公告)日：2012-01-12

申请号：US13233906

申请日：2011-09-15

申请人： Toshihiko NAGASE ,  Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Masahiko Nakayama ,  Tadashi Kai ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Toshihiko NAGASE ,  Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Masahiko Nakayama ,  Tadashi Kai ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： G11C11/15 ,  G06K19/077 ,  H01L29/82

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/08

摘要： A magnetoresistive element which records information by supplying spin-polarized electrons to a magnetic material, includes a first pinned layer which is made of a magnetic material and has a first magnetization directed in a direction perpendicular to a film surface, a free layer which is made of a magnetic material and has a second magnetization directed in the direction perpendicular to the film surface, the direction of the second magnetization reversing by the spin-polarized electrons, and a first nonmagnetic layer which is provided between the first pinned layer and the free layer. A saturation magnetization Ms of the free layer satisfies a relationship 0≦Ms

摘要翻译： 通过向磁性材料提供自旋极化电子来记录信息的磁阻元件包括由磁性材料制成并且具有沿与膜表面垂直的方向的第一磁化的第一固定层，制成的自由层 并且具有在垂直于膜表面的方向上的第二磁化强度，由自旋极化电子反转的第二磁化方向以及设置在第一被钉扎层和自由层之间的第一非磁性层 。 自由层的饱和磁化强度Ms满足关系0＆nlE; Ms <√{平方根超过（）} {Jw /（6＆pgr; At）}。 Jw是写入电流密度，t是自由层的厚度，A是常数。

公开(公告)号：US20070096229A1

公开(公告)日：2007-05-03

申请号：US11551868

申请日：2006-10-23

申请人： Masatoshi Yoshikawa ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Hiroaki Yoda ,  Tatsuya Kishi ,  Masahiko Nakayama

发明人： Masatoshi Yoshikawa ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Hiroaki Yoda ,  Tatsuya Kishi ,  Masahiko Nakayama

IPC分类号： H01L43/00

CPC分类号： H01L43/10 ,  G11C11/16

摘要： A magnetoresistive element includes a magnetic recording layer which records information as a magnetization direction changes upon supplying a bidirectional current in an out-of-plane direction, a magnetic reference layer which has a fixed magnetization direction, and a nonmagnetic layer which is provided between the magnetic recording layer and the magnetic reference layer. The magnetic recording layer includes an interface magnetic layer which is provided in contact with the nonmagnetic layer and has a first magnetic anisotropy energy, and a magnetic stabilizing layer which has a second magnetic anisotropy energy higher than the first magnetic anisotropy energy.

摘要翻译： 磁阻元件包括磁记录层，该磁记录层在沿面外方向提供双向电流时记录磁化方向变化的信息，具有固定的磁化方向的磁性参考层和设置在磁性方向之间的非磁性层 磁记录层和磁参考层。 磁记录层包括与非磁性层接触并具有第一磁各向异性能的界面磁性层和具有高于第一磁各向异性能的第二磁各向异性能的磁稳定层。

公开(公告)号：US08363462B2

公开(公告)日：2013-01-29

申请号：US13233906

申请日：2011-09-15

申请人： Toshihiko Nagase ,  Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Masahiko Nakayama ,  Tadashi Kai ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Toshihiko Nagase ,  Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Masahiko Nakayama ,  Tadashi Kai ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： G11C11/15

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/08

摘要： A magnetoresistive element which records information by supplying spin-polarized electrons to a magnetic material, includes a first pinned layer which is made of a magnetic material and has a first magnetization directed in a direction perpendicular to a film surface, a free layer which is made of a magnetic material and has a second magnetization directed in the direction perpendicular to the film surface, the direction of the second magnetization reversing by the spin-polarized electrons, and a first nonmagnetic layer which is provided between the first pinned layer and the free layer. A saturation magnetization Ms of the free layer satisfies a relationship 0≦Ms

摘要翻译： 通过向磁性材料提供自旋极化电子来记录信息的磁阻元件包括由磁性材料制成并且具有沿与膜表面垂直的方向的第一磁化的第一固定层，制成的自由层 并且具有在垂直于膜表面的方向上的第二磁化强度，由自旋极化电子反转的第二磁化方向以及设置在第一被钉扎层和自由层之间的第一非磁性层 。 自由层的饱和磁化强度Ms满足关系0＆nlE; Ms <√{平方根超过（）} {Jw /（6＆pgr; At）}。 Jw是写入电流密度，t是自由层的厚度，A是常数。

公开(公告)号：US07663197B2

公开(公告)日：2010-02-16

申请号：US11534440

申请日：2006-09-22

申请人： Toshihiko Nagase ,  Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Masahiko Nakayama ,  Tadashi Kai ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Toshihiko Nagase ,  Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Masahiko Nakayama ,  Tadashi Kai ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： H01L43/08

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/08

摘要： A magnetoresistive element which records information by supplying spin-polarized electrons to a magnetic material, includes a first pinned layer which is made of a magnetic material and has a first magnetization directed in a direction perpendicular to a film surface, a free layer which is made of a magnetic material and has a second magnetization directed in the direction perpendicular to the film surface, the direction of the second magnetization reversing by the spin-polarized electrons, and a first nonmagnetic layer which is provided between the first pinned layer and the free layer. A saturation magnetization Ms of the free layer satisfies a relationship 0≧Ms

摘要翻译： 通过向磁性材料提供自旋极化电子来记录信息的磁阻元件包括由磁性材料制成并且具有沿与膜表面垂直的方向的第一磁化的第一固定层，制成的自由层 并且具有在垂直于膜表面的方向上的第二磁化强度，由自旋极化电子反转的第二磁化方向以及设置在第一被钉扎层和自由层之间的第一非磁性层 。 自由层的饱和磁化强度Ms满足关系0> = Mst是自由层的厚度，A是常数。

公开(公告)号：US08895162B2

公开(公告)日：2014-11-25

申请号：US13236028

申请日：2011-09-19

申请人： Katsuya Nishiyama ,  Shigemi Mizukami ,  Terunobu Miyazaki ,  Hiroaki Yoda ,  Tadashi Kai ,  Tatsuya Kishi ,  Daisuke Watanabe ,  Mikihiko Oogane ,  Yasuo Ando ,  Masatoshi Yoshikawa ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Makoto Nagamine ,  Chunlan Feng

发明人： Katsuya Nishiyama ,  Wu Feng ,  Shigemi Mizukami ,  Terunobu Miyazaki ,  Hiroaki Yoda ,  Tadashi Kai ,  Tatsuya Kishi ,  Daisuke Watanabe ,  Mikihiko Oogane ,  Yasuo Ando ,  Masatoshi Yoshikawa ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Makoto Nagamine

IPC分类号： G01R33/09 ,  H01L43/08 ,  H01F10/32 ,  H01L43/10 ,  H01F10/193 ,  G11C11/16 ,  H01L27/22 ,  B82Y25/00 ,  H01F10/28

CPC分类号： H01L27/228 ,  B82Y25/00 ,  G01R33/09 ,  G11C11/16 ,  G11C11/161 ,  H01F10/123 ,  H01F10/1933 ,  H01F10/1936 ,  H01F10/28 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1121 ,  Y10T428/1143

摘要： A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer and having a changeable magnetization direction with an easy axis of magnetization in a direction perpendicular to a film plane; a first nonmagnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the first nonmagnetic layer and having a fixed magnetization layer with an easy axis of magnetization in a direction perpendicular to the film plane. The first magnetic layer includes a ferrimagnetic layer having a DO22 structure or an L10 structure, the ferrimagnetic layer has a c-axis oriented in a direction perpendicular to the film plane, and the magnetization direction of the first magnetic layer is changeable by a current flowing through the first magnetic layer, the first nonmagnetic layer, and the second magnetic layer.

摘要翻译： 根据实施例的磁阻元件包括：基底层; 第一磁性层，形成在所述基底层上，并且具有在垂直于膜平面的方向上具有容易的磁化轴的可变磁化方向; 形成在第一磁性层上的第一非磁性层; 以及形成在第一非磁性层上并且具有在垂直于膜平面的方向上具有易磁化轴的固定磁化层的第二磁性层。 第一磁性层包括具有DO22结构或L10结构的铁氧体层，所述铁氧体层具有在垂直于所述膜平面的方向上取向的c轴，并且所述第一磁性层的磁化方向可以由电流流过 通过第一磁性层，第一非磁性层和第二磁性层。

公开(公告)号：US07920361B2

公开(公告)日：2011-04-05

申请号：US11844069

申请日：2007-08-23

申请人： Masatoshi Yoshikawa ,  Tadashi Kai ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Masatoshi Yoshikawa ,  Tadashi Kai ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： G11B5/39

CPC分类号： H01F10/3254 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/16 ,  H01F41/307 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

摘要： It is made possible to provide a magnetoresistive effect element that can reverse magnetization direction with a low current, having low areal resistance (RA) and a high TMR ratio. A magnetoresistive effect element includes: a film stack that includes a magnetization free layer including a magnetic layer in which magnetization direction is changeable, a magnetization pinned layer including a magnetic layer in which magnetization direction is pinned, and an intermediate layer provided between the magnetization free layer and the magnetization pinned layer, the intermediate layer being an oxide containing boron (B) and an element selected from the group consisting of Ca, Mg, Sr, Ba, Ti, and Sc. Current is applied bidirectionally between the magnetization pinned layer and the magnetization free layer through the intermediate layer, so that the magnetization of the magnetization free layer is reversible.

摘要翻译： 可以提供具有低电流（RA）和高TMR比的低电流来反向磁化方向的磁阻效应元件。 磁阻效应元件包括：膜堆叠，其包括磁化自由层，其包括其中磁化方向可变的磁性层，包括其中磁化方向被钉扎的磁性层的磁化固定层，以及设置在磁化自由度之间的中间层 层和磁化固定层，中间层是含有硼（B）的氧化物和选自Ca，Mg，Sr，Ba，Ti和Sc的元素。 通过中间层在磁化钉扎层和磁化自由层之间双向施加电流，使得无磁化层的磁化是可逆的。

公开(公告)号：US07848059B2

公开(公告)日：2010-12-07

申请号：US11858386

申请日：2007-09-20

申请人： Masatoshi Yoshikawa ,  Tadashi Kai ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Masatoshi Yoshikawa ,  Tadashi Kai ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： G11B5/39

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11B5/3906 ,  G11C11/16

摘要： A magnetoresistive effect element includes a magnetization fixed layer having substantially fixed magnetization direction. A magnetization variable layer has a variable magnetization direction, consists of a magnetic alloy that has a BCC structure and is expressed by Fe1-x-yCoxNiy (0≦x+y≦1, 0≦x≦1, 0≦y≦1), and contains at least one additive element of V, Cr, and Mn in a range of 0

摘要翻译： 磁阻效应元件包括具有基本上固定的磁化方向的磁化固定层。 磁化变化层具有可变的磁化方向，由具有BCC结构并由Fe1-x-yCoxNiy（0＆amp; nEE; x + y＆nlE; 1,0＆lt; nlE; x＆nlE; 1,0＆amp; nlE; y＆nlE; 1）表示的磁性合金构成。 ，并且含有至少一种V，Cr和Mn的添加元素，其范围为0

公开(公告)号：US20100230770A1

公开(公告)日：2010-09-16

申请号：US12790171

申请日：2010-05-28

申请人： Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Toshihiko Nagase ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Toshihiko Nagase ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： H01L29/82

CPC分类号： H01L27/228 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/08

摘要： The present invention provides a low-resistance magnetoresistive element of a spin-injection write type. A crystallization promoting layer that promotes crystallization is formed in contact with an interfacial magnetic layer having an amorphous structure, so that crystallization is promoted from the side of a tunnel barrier layer, and the interface between the tunnel barrier layer and the interfacial magnetic layer is adjusted. With this arrangement, it is possible to form a magnetoresistive element that has a low resistance so as to obtain a desired current value, and has a high TMR ratio.

摘要翻译： 本发明提供一种自旋注入型的低电阻磁阻元件。 形成促进结晶的结晶促进层与具有非晶结构的界面磁性层接触，从而从隧道势垒层的侧面促进结晶化，并且调整隧道势垒层与界面磁性层之间的界面 。 通过这种布置，可以形成具有低电阻以获得期望电流值并且具有高TMR比的磁阻元件。